Vishay Siliconix IRLD110PBF
- Part No.:
- IRLD110PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRLD110PBF.pdf
- Description:
- MOSFET N-CH 100V 1A 4DIP
- Quantity:
- Payment:

- Shipping:

Inventory:2,500
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRLD110PBF from Vishay Siliconix is a logic-level N-channel power MOSFET in HVMDIP (4-pin DIP) package, rated for 100 V VDS, 0.54 Ω RDS(on) at VGS = 5 V, 1 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It serves as a low-cost, machine-insertable switching element in DC-DC converters, LED drivers, and industrial control relays.
For engineers reviewing the IRLD110PBF datasheet, IRLD110PBF pinout, IRLD110PBF application, or IRLD110PBF equivalent, key selection criteria include its logic-level gate drive (VGS(th) = 1–2 V), repetitive avalanche rating (IAR = 1 A), 6.1 nC total gate charge, and thermal performance in through-hole mounting with dual-drain thermal path.
Technical Context
This device belongs to Vishay's third-generation power MOSFET family optimized for fast switching and ruggedness in cost-sensitive, low-power applications. Its HVMDIP package integrates dual drain leads for enhanced thermal conduction to the PCB, enabling up to 1 W power dissipation without heatsinking.
The IRLD110PBF features dynamic dV/dt immunity (5.5 V/ns), body diode recovery time of 110–130 ns, and is characterized for operation across -55 °C to +175 °C ambient, supporting designs requiring high reliability under transient stress and elevated temperature environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input voltages up to 80 V DC in buck converters and motor drive half-bridges |
| RDS(on) @ VGS = 5 V | 0.54 Ω - enables <1 W conduction loss at 1 A, suitable for low-duty-cycle switching |
| Qg | 6.1 nC - determines gate drive strength requirement; compatible with standard logic-level microcontroller outputs |
| ID (continuous, TA = 25 °C) | 1 A - defines maximum steady-state load current without forced airflow or heatsink |
| TJ(max) | +175 °C - allows operation in sealed enclosures or high-ambient industrial environments |
| EAS | 100 mJ - specifies single-pulse unclamped inductive energy handling capability |
| RthJA | 120 °C/W - sets thermal rise per watt; requires minimum 1.5 cm² copper pour for safe 1 W operation |
Pinout & Package
The IRLD110PBF uses the HVMDIP (High Voltage Mini-DIP) 4-pin through-hole package with dual drain leads (D1/D2) serving as both current paths and thermal anchors to the PCB. Package dimensions: 7.87–8.38 mm length × 7.62–10.79 mm width × 6.86–7.36 mm height; lead pitch 2.54 mm (0.1").
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1, D2 | Drain (dual parallel) | Carry main current path and conduct heat directly to PCB copper; must be soldered to large thermal pad |
| G | Gate | Logic-level control input; threshold 1–2 V; requires no level-shifting when driven by 3.3 V or 5 V MCU |
| S | Source | Reference node for gate drive and current sensing; connects to ground or low-side return path |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1–2 V enables direct interface with 3.3 V/5 V microcontrollers without gate driver ICs |
| Repetitive avalanche rated | Rated for 1 A repetitive avalanche current (IAR) - supports robust operation in inductive load switching |
| Dual drain thermal path | Two parallel drain pins reduce thermal resistance and improve power dissipation in compact layouts |
| Dynamic dV/dt immunity | 5.5 V/ns rating prevents false turn-on during high-speed voltage transients in noisy industrial environments |
| End stackable package | HVMDIP mechanical design allows vertical stacking of multiple units on 0.1" grid for space-constrained board layouts |
Applications
| LED Constant-Current Driver | Low-Voltage DC Motor Control |
|---|---|
Use Scenario: Driving 12 V LED strings in signage or indicator panels with PWM dimming at ≤1 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling LED current path; operates in linear or saturated switching mode. Use Value: 0.54 Ω RDS(on) limits conduction loss to <0.54 W at 1 A, while logic-level gate ensures full enhancement from MCU GPIO. | Use Scenario: Controlling small brushed DC motors (e.g., fans, actuators) in HVAC or appliance control boards. IC Role / Device Role / Timing Role: Half-bridge low-side switch; handles stall currents up to 1 A continuously and 8 A pulsed. Use Value: Repetitive avalanche rating protects against back-EMF spikes during motor commutation without external snubbers. |
| Industrial Relay Replacement | Isolated Power Supply SR Switch |
Use Scenario: Solid-state replacement for electromechanical relays in PLC output modules operating at 24–48 V DC. IC Role / Device Role / Timing Role: Load switch interfacing with optocoupled control signals; duty cycle typically <10%. Use Value: 175 °C max junction temperature and -55 °C min storage enable deployment in wide-temperature industrial cabinets. | Use Scenario: Synchronous rectifier in 5–12 V secondary side of isolated flyback or forward converters. IC Role / Device Role / Timing Role: Secondary-side rectifying switch replacing Schottky diode; driven by transformer-coupled gate signal. Use Value: Low Qg (6.1 nC) and fast switching (tr = 4.7 ns) minimize dead-time losses and improve efficiency over 85% at light loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLB8721PBF | Higher VDS (30 V), lower RDS(on) (3.3 mΩ), TO-220 package, not logic-level (VGS(th) = 1.0–2.4 V but optimized for 10 V drive) | Requires gate driver for full enhancement at 3.3 V; better suited for high-current, low-voltage battery systems | Select IRLB8721PBF only if higher current (>20 A) and lower RDS(on) are critical and gate drive voltage ≥10 V is available. |
| FQP30N06L | 60 V VDS, 0.028 Ω RDS(on) at VGS = 5 V, TO-220, same logic-level compatibility | Higher current rating (30 A pulsed), larger footprint, no dual-drain thermal advantage | Choose FQP30N06L when higher peak current capability is needed and PCB space permits TO-220 mounting. |
Compared with IRLD110PBF, IRLB8721PBF offers superior conduction efficiency but lacks native 3.3 V compatibility and through-hole thermal integration, while FQP30N06L delivers higher current capacity in a less thermally optimized package-making IRLD110PBF optimal for compact, logic-driven, medium-power switching where PCB real estate and thermal management are constrained.
Availability
IRLD110PBF is available at Aetrix Electronics and suitable for LED drivers, industrial relay replacements, low-voltage motor controls, and isolated power supply synchronous rectifiers requiring stable component supply and long-term manufacturability.
Supply support for IRLD110PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRLD110PBF belongs to Vishay's logic-level power MOSFET product line designed for cost-sensitive, low-to-medium power switching applications where ease of drive, thermal performance in through-hole packages, and avalanche robustness are essential.
FAQ
What is the maximum continuous drain current for IRLD110PBF at 100 °C ambient temperature?
The IRLD110PBF supports 0.70 A continuous drain current at TA = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the HVMDIP package without heatsinking. At 25 °C ambient, it delivers 1 A continuously. Designers must verify PCB copper area and airflow to sustain target current at elevated temperatures.
Does IRLD110PBF require a gate resistor for reliable switching?
Yes - a gate resistor is recommended for IRLD110PBF to control dI/dt and prevent oscillation, especially in inductive load circuits. Typical values range from 10 Ω to 47 Ω depending on drive strength and EMI requirements. The datasheet references Rg = 12 Ω in switching time tests, confirming its use for stable turn-on/turn-off behavior.
Can IRLD110PBF be used in avalanche mode repeatedly?
Yes - the IRLD110PBF is explicitly rated for repetitive avalanche operation with IAR = 1 A and EAR = 0.13 mJ per pulse. This capability is validated under defined conditions (pulse width ≤ 300 μs, duty cycle ≤ 2 %) and enables robust switching into inductive loads without external clamping components.
What is the body diode forward voltage of IRLD110PBF at 1 A and 25 °C?
The body diode forward voltage (VSD) of IRLD110PBF is 2.5 V maximum at TJ = 25 °C and IS = 1 A with VGS = 0 V. This relatively high drop reflects its planar MOSFET structure and confirms the need for external Schottky diodes in high-efficiency synchronous rectifier designs where VSD contributes significantly to loss.
Is IRLD110PBF RoHS-compliant and lead-free?
Yes - the "PbF" suffix in IRLD110PBF denotes lead-free and RoHS-compliant construction per Vishay's material categorization standard (see doc?99912). The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements and is qualified for reflow soldering with peak temperature up to 300 °C for 10 seconds.
IRLD110PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 600mA, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.1 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 250 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRLD110PBF FAQ
1.How can I place an order for IRLD110PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLD110PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLD110PBF reliable?
The price and inventory of IRLD110PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLD110PBF is usually 5 days.
3.What payment methods are accepted for IRLD110PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLD110PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLD110PBF?
IRLD110PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLD110PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLD110PBF?
For technical support, including IRLD110PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLD110PBF requirements.
6.How does Aetrix verify that IRLD110PBF is sourced from the original manufacturer or authorized distributors?
All IRLD110PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLD110PBF meets industry standards.
7.What is the process for return or replacement of IRLD110PBF?
All IRLD110PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLD110PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLD110PBF part is unused and in its original packaging.
Return procedure for IRLD110PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRLD110PBF Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

