Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLD120

Name: IRLD120
Brand: Vishay Siliconix
SKU: IRLD120
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLD120

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRLD120.pdf

Description:: MOSFET N-CH 100V 1.3A 4DIP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,887

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLD120 from Vishay Siliconix is a logic-level N-channel power MOSFET in HVMDIP (4-pin DIP) package, rated for 100 V V_DS, 1.3 A continuous drain current at 25 °C, 0.27 Ω R_DS(on) at V_GS = 5 V, and 175 °C maximum junction temperature - designed for low-cost, machine-insertable DC-DC converter and motor control stages requiring rugged avalanche capability and thermal stacking.

For engineers reviewing the IRLD120 datasheet, IRLD120 pinout, IRLD120 application, or IRLD120 equivalent, this page delivers verified package mapping, validated avalanche energy (690 mJ), confirmed gate charge (12 nC), and real-world design context for industrial power switching, logic-driven load control, and thermally constrained PCB layouts.

Technical Context

The IRLD120 employs a third-generation planar vertical DMOS structure optimized for fast switching with low gate charge (Q_g = 12 nC) and robust unclamped inductive switching performance. Its logic-level gate threshold (V_GS(th) = 1.0–2.0 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

Thermally, the dual-drain HVMDIP package provides a low-impedance thermal path to the PCB mounting surface, supporting up to 1 W dissipation with R_thJA ≤ 120 °C/W. The device is fully specified for repetitive avalanche operation (I_AR = 1.3 A, E_AR = 0.13 mJ) and features dV/dt immunity of 5.5 V/ns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 24 V and 48 V industrial bus systems with margin against transients
R_DS(on) @ V_GS = 5 V	0.27 Ω - enables <1.3 W conduction loss at 2 A, suitable for low-duty-cycle loads
Q_g	12 nC - allows efficient 100–500 kHz switching with standard gate drivers
T_J max	175 °C - permits operation in sealed enclosures or high-ambient environments
E_AS	690 mJ - withstands single-pulse inductive energy in relay/motor snubberless designs
I_D (T_A = 100 °C)	0.94 A - defines usable current limit in non-heatsinked surface-mount applications
dV/dt rating	5.5 V/ns - suppresses false turn-on in noisy high-dV/dt environments like motor drives

Pinout & Package

The IRLD120 uses the HVMDIP (High Voltage Mini-DIP) 4-pin through-hole package with dual drain leads (pins 1 & 4), source (pin 2), and gate (pin 3). Leads are spaced on 0.1" centers and end-stackable for compact multi-device layouts.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main drain connection	Electrically tied to internal die drain; used with Pin 4 for parallel current handling and thermal spreading
Pin 2 (Source)	Source terminal	Reference node for gate drive; connects to ground or low-side return path
Pin 3 (Gate)	Control input	Logic-level compatible (V_GS(th) ≤ 2.0 V); requires <100 nA leakage current management
Pin 4 (Drain)	Secondary drain connection	Internally bonded to same drain region as Pin 1; doubles copper area for thermal conduction and current sharing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.0 V (R_DS(on) = 0.38 Ω), enabling direct MCU GPIO control
Repetitive avalanche rated	Rated for 1.3 A repetitive avalanche current and 0.13 mJ energy - supports reliable operation under inductive fault conditions
Dual-drain thermal path	Pins 1 and 4 serve as parallel thermal vias to PCB copper, reducing effective R_thJA in stacked configurations
Dynamic dV/dt immunity	5.5 V/ns rating prevents spurious turn-on during fast voltage transients in motor commutation or relay switching
175 °C operation	Extended junction temperature range allows use in sealed industrial housings without forced air cooling

Applications

Industrial DC-DC Converters	Low-Voltage Motor Control
Use Scenario: Step-down regulation in 24 V input industrial power supplies delivering 3.3 V/5 V to PLC I/O modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 250 kHz with logic-level gate drive. Use Value: 0.27 Ω R_DS(on) minimizes conduction loss at 1.2 A load; 12 nC Q_g ensures clean 10 ns rise/fall times with minimal driver stress.	Use Scenario: H-bridge half-bridge leg driving 12 V brushed DC motors in automated valve actuators. IC Role / Device Role / Timing Role: N-channel high-side or low-side switch controlled by 3.3 V microcontroller outputs. Use Value: Logic-level V_GS(th) eliminates need for external level shifters; 690 mJ E_AS absorbs back-EMF during abrupt motor stop.
Thermally Constrained Lighting Drivers	Relay Replacement Circuits
Use Scenario: Constant-current LED driver for 24 V architectural lighting where heatsinking is limited by enclosure size. IC Role / Device Role / Timing Role: PWM-controlled current sink regulating up to 1.3 A through high-brightness LED strings. Use Value: 175 °C T_J max and dual-drain thermal path allow sustained operation at 1 W dissipation on 2-layer FR4 without heatsinks.	Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels switching 24 V AC/DC loads. IC Role / Device Role / Timing Role: Low-power, low-noise load switch with integrated body diode for inductive load freewheeling. Use Value: 2.5 V V_SD body diode forward drop and 130 ns trr enable clean inductive energy recirculation without external flyback diodes.

Industrial DC-DC Converters

Low-Voltage Motor Control

Use Scenario: Step-down regulation in 24 V input industrial power supplies delivering 3.3 V/5 V to PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 250 kHz with logic-level gate drive.

Use Value: 0.27 Ω R_DS(on) minimizes conduction loss at 1.2 A load; 12 nC Q_g ensures clean 10 ns rise/fall times with minimal driver stress.

Use Scenario: H-bridge half-bridge leg driving 12 V brushed DC motors in automated valve actuators.

IC Role / Device Role / Timing Role: N-channel high-side or low-side switch controlled by 3.3 V microcontroller outputs.

Use Value: Logic-level V_GS(th) eliminates need for external level shifters; 690 mJ E_AS absorbs back-EMF during abrupt motor stop.

Thermally Constrained Lighting Drivers

Relay Replacement Circuits

Use Scenario: Constant-current LED driver for 24 V architectural lighting where heatsinking is limited by enclosure size.

IC Role / Device Role / Timing Role: PWM-controlled current sink regulating up to 1.3 A through high-brightness LED strings.

Use Value: 175 °C T_J max and dual-drain thermal path allow sustained operation at 1 W dissipation on 2-layer FR4 without heatsinks.

Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels switching 24 V AC/DC loads.

IC Role / Device Role / Timing Role: Low-power, low-noise load switch with integrated body diode for inductive load freewheeling.

Use Value: 2.5 V V_SD body diode forward drop and 130 ns trr enable clean inductive energy recirculation without external flyback diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLD024PbF	Lower V_DS (60 V), lower R_DS(on) (0.13 Ω @ 5 V), same HVMDIP package and logic-level drive	Better suited for 12–24 V systems with higher current density needs; not rated for 100 V bus transients	Select when V_DS margin < 80 V suffices and R_DS(on) reduction below 0.2 Ω is critical
FQP30N06L	TO-220 package, 60 V V_DS, 0.028 Ω R_DS(on) @ 10 V, non-logic-level (V_GS(th) = 1–2.5 V but optimized for 10 V drive)	Higher power handling (22 A continuous) but requires gate driver or 10 V supply; incompatible footprint	Choose for higher-current, heatsinked applications where board space and thermal mass permit TO-220 mounting

Compared with IRLD024PbF and FQP30N06L, the IRLD120 uniquely balances 100 V rating, logic-level compatibility, HVMDIP through-hole mountability, and 175 °C operation - making it optimal for cost-sensitive, thermally constrained, and transient-prone industrial controls where pin-compatible alternatives do not exist.

Availability

IRLD120 is available at Aetrix Electronics and suitable for industrial DC-DC converters, low-voltage motor control circuits, and thermally constrained lighting drivers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRLD120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLD120 belongs to Vishay's logic-level power MOSFET family engineered for cost-effective, machine-insertable switching in space-constrained industrial controls - emphasizing ruggedness, thermal stackability, and direct microcontroller interface.

FAQ

What is the maximum continuous drain current for IRLD120 at 100 °C ambient temperature?

The IRLD120 supports 0.94 A continuous drain current at T_A = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the HVMDIP package with R_thJA ≤ 120 °C/W. At 25 °C ambient, the rating rises to 1.3 A. Designers must verify PCB copper area and airflow to sustain this current without exceeding 175 °C junction temperature.

Does IRLD120 require a gate resistor for safe switching?

Yes - while the IRLD120 has low gate charge (12 nC), a series gate resistor (typically 10–47 Ω) is recommended to dampen ringing, limit peak gate current, and control dV/dt during turn-on/off. Without it, parasitic inductance in gate traces may cause oscillation or exceed ±10 V gate-source voltage rating. The resistor value should be selected based on driver strength and desired switching speed trade-off.

Can IRLD120 replace a mechanical relay in 24 V DC load switching?

Yes - the IRLD120 is widely used as a solid-state relay substitute for 24 V DC loads up to ~1.3 A resistive or inductive. Its integrated body diode (V_SD = 2.5 V, t_rr = 130 ns) handles inductive kickback, and its 100 V V_DS rating provides margin against load dump transients. Unlike relays, it offers silent operation, no contact wear, and microsecond switching - but requires proper gate drive and thermal layout.

Is IRLD120 Pb-free and RoHS-compliant?

Yes - the ordering variant IRLD120PbF is explicitly lead-free and RoHS-compliant per Vishay's material categorization standard (document #99912). It meets JEDEC J-STD-609 Class 1 marking requirements and is qualified for reflow soldering up to 300 °C peak for 10 seconds, as specified in the S21-0886 datasheet.

What is the significance of the dual-drain configuration in IRLD120's HVMDIP package?

The dual-drain configuration (Pins 1 and 4) in the IRLD120's HVMDIP package serves two key functions: it doubles the copper area for heat conduction into the PCB, lowering effective thermal resistance, and provides parallel current paths to reduce package inductance and improve current sharing in stacked assemblies. This design directly enables 1 W power dissipation without external heatsinking.

IRLD120 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 780mA, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRLD120 FAQ

1.How can I place an order for IRLD120 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLD120 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLD120 reliable?

The price and inventory of IRLD120 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLD120 is usually 5 days.

3.What payment methods are accepted for IRLD120?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLD120 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLD120?

IRLD120 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLD120 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLD120?

For technical support, including IRLD120 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLD120 requirements.

6.How does Aetrix verify that IRLD120 is sourced from the original manufacturer or authorized distributors?

All IRLD120 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLD120 meets industry standards.

7.What is the process for return or replacement of IRLD120?

All IRLD120 units undergo pre-shipment inspection (PSI). If there is an issue with IRLD120, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLD120 part is unused and in its original packaging.

Return procedure for IRLD120:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …