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Infineon Technologies IRLH6224TRPBF

Part No.:
IRLH6224TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixIRLH6224TRPBF.pdf
Description:
MOSFET N-CH 20V 28A/105A 8PQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,915

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Product details

Overview

IRLH6224TRPBF from Infineon Technologies is a 20 V, 80 A N-channel HEXFET Power MOSFET in PQFN 5×6 mm package, optimized for high-current battery protection switches with RDS(on) of 2.3 mΩ @ VGS = 10 V and 3.0 mΩ @ VGS = 4.5 V. It features low thermal resistance (RθJC(Bottom) = 2.4 °C/W), 100% Rg tested gate, and MSL1 industrial qualification.

For engineers reviewing the IRLH6224TRPBF datasheet, IRLH6224TRPBF pinout, IRLH6224TRPBF application, or IRLH6224TRPBF equivalent, key selection criteria include its 44 nC typical gate charge, 1.2 mm profile enabling high power density, body diode reverse recovery time of 38–57 ns, and compatibility with surface-mount manufacturing for battery management systems.

Technical Context

This device operates as a low-side synchronous rectifier or load switch in portable and automotive battery protection circuits. Its 20 V VDS rating supports Li-ion and multi-cell battery stacks up to 16 V nominal, while the 0.8 V typical gate threshold enables direct drive from 3.3 V or 5 V controllers without level shifting.

The PQFN 5×6 mm package uses bottom-side thermal pad for direct PCB heat transfer, achieving 2.4 °C/W junction-to-case (bottom) thermal resistance. The 44 nC total gate charge and 8.5 nC gate-to-drain charge support efficient switching at frequencies up to 500 kHz in DC-DC and OR-ing applications.

Key Specifications

ParameterValue and Actual Design Meaning
VDS20 V - Supports up to 16 V battery packs with 25% margin for transients
RDS(on) max @ VGS = 4.5 V3.0 mΩ - Enables ≤120 mW conduction loss at 20 A continuous current
Qg typ44 nC - Determines gate driver power requirement and switching speed in PWM control
ID @ TC(Bottom) = 25°C80 A - Continuous current capability when mounted on 2 oz copper with thermal vias
RθJC(Bottom)2.4 °C/W - Enables >30 W dissipation with ≤72°C temperature rise above PCB
VGS(th) typ0.8 V - Ensures reliable turn-on with 3.3 V logic-level gate drive
trr38–57 ns - Limits reverse recovery losses in synchronous buck or OR-ing topologies

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom side; 3-pin configuration (Drain, Source, Gate) with standard industry pinout for drop-in compatibility across vendors.

Pin/TerminalCircuit RoleDesign Meaning
D (Drain)Main current path from source to loadConnected to battery cathode or system rail; electrically tied to thermal pad
S (Source)Reference node for gate drive and current returnGround-referenced terminal; defines VGS reference and carries full load current
G (Gate)Control input for channel conductionHigh-impedance input requiring <44 nC charge for full enhancement; sensitive to ESD

Key Features

FeatureDesign Value
Low RθJC(Bottom)2.4 °C/W - Enables direct thermal coupling to PCB ground plane for passive cooling
100% Rg testedGuaranteed gate resistance ≤2.0 Ω - Ensures consistent switching timing and reduces risk of oscillation
Low-profile package1.2 mm height - Allows integration into space-constrained battery packs and portable electronics
MSL1 industrial qualificationMoisture sensitivity level 1 - Eliminates bake requirements before reflow, reducing manufacturing cost
RoHS compliantNo lead, bromide, or halogen - Meets environmental compliance for global consumer and industrial markets

Applications

Battery Protection CircuitPower OR-ing Module

Use Scenario: Overcurrent and short-circuit protection in 2–4 cell Li-ion battery packs for power tools and e-bikes.

IC Role / Device Role / Timing Role: Low-side main switch controlling discharge path; activated/deactivated by protection IC during fault conditions.

Use Value: 2.3 mΩ RDS(on) minimizes voltage drop and self-heating during sustained 60 A discharge, extending pack runtime and cycle life.

Use Scenario: Redundant power supply selection in telecom base stations using dual 12 V inputs.

IC Role / Device Role / Timing Role: Synchronous OR-ing FET replacing Schottky diodes to reduce forward voltage drop and heat generation.

Use Value: 1.2 V body diode forward voltage and 38 ns trr enable fast reverse recovery, minimizing shoot-through risk during input switchover.

USB-C PD Power PathMotor Driver Half-Bridge

Use Scenario: Input power path management in USB-C PD sink devices supporting 20 V/5 A operation.

IC Role / Device Role / Timing Role: High-current load switch between USB-C connector and internal DC-DC converter input.

Use Value: 4.5 V gate drive compatibility allows direct interface with USB PD controller GPIOs, eliminating external level shifters.

Use Scenario: Low-side switch in brushed DC motor drivers for robotics and industrial actuators.

IC Role / Device Role / Timing Role: PWM-controlled current path for motor winding commutation; paired with high-side driver.

Use Value: 80 A continuous current rating supports peak motor stall currents up to 75 A without derating at 85°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLH6224TR2PBFSame die, 400-unit tape-and-reel packaging vs. 4000 unitsPrototyping and low-volume validation onlySelect for evaluation boards or small-batch builds where reel size impacts inventory turnover
SI7157DP-T1-GE320 V, 3.2 mΩ @ 4.5 V, Qg = 39 nC, SO-8 packageHigher RθJA (35 °C/W) limits power handling without heatsinkChoose when board layout requires through-hole or SO-8 footprint and thermal demand is ≤15 W

Compared with IRLH6224TRPBF, the TR2PBF variant offers identical electrical performance but smaller reel quantity for flexibility, while the SI7157DP trades lower gate charge for higher thermal resistance and larger footprint-making it suitable only where PQFN assembly infrastructure is unavailable.

Availability

IRLH6224TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C PD power paths, motor driver half-bridges, and power OR-ing modules requiring stable component supply and long-term production continuity.

Supply support for IRLH6224TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line targets high-efficiency, high-current switching applications including battery protection, OR-ing, and motor control-designed for minimal conduction and switching losses in compact form factors.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLH6224TRPBF supports 40 A continuous drain current when the bottom case temperature is maintained at 100°C, as specified in the Absolute Maximum Ratings table under ID @ TC(Bottom) = 100°C. This derating reflects thermal limits of the PQFN package and PCB thermal design.

Does this MOSFET require a gate resistor for stability?

A gate resistor of 1.8 Ω is recommended per the datasheet's switching time test circuit, as it balances switching speed against ringing and EMI. The device's 2.0 Ω typical gate resistance and 44 nC Qg make it susceptible to oscillation without controlled gate drive impedance.

Can the body diode be used for reverse polarity protection?

No-the body diode conducts from source to drain, making it unsuitable for reverse polarity protection. For that function, the MOSFET must be placed in series with the positive rail and operated as a high-side switch with appropriate gate biasing, not relying on intrinsic diode conduction.

Is the PQFN 5×6 mm package compatible with standard reflow profiles?

Yes-the IRLH6224TRPBF is qualified to MSL1 and supports JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260°C. Its bottom thermal pad requires solder paste stencil design with ≥50% aperture ratio to ensure void-free thermal interface to the PCB.

IRLH6224TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
28A (Ta), 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
3mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id:
1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
86 nC @ 10 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
3710 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
3.6W (Ta), 52W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-PQFN (5x6)

IRLH6224TRPBF FAQ

1.How can I place an order for IRLH6224TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLH6224TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLH6224TRPBF reliable?

The price and inventory of IRLH6224TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLH6224TRPBF is usually 5 days.

3.What payment methods are accepted for IRLH6224TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLH6224TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLH6224TRPBF?

IRLH6224TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLH6224TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLH6224TRPBF?

For technical support, including IRLH6224TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLH6224TRPBF requirements.

6.How does Aetrix verify that IRLH6224TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLH6224TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLH6224TRPBF meets industry standards.

7.What is the process for return or replacement of IRLH6224TRPBF?

All IRLH6224TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLH6224TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLH6224TRPBF part is unused and in its original packaging.

Return procedure for IRLH6224TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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