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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLHS6342TRPBF

Name: IRLHS6342TRPBF
Brand: Infineon Technologies
SKU: IRLHS6342TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLHS6342TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 6-PowerVDFN

Datasheet:: IRLHS6342TRPBF.pdf

Description:: MOSFET N-CH 30V 8.7A/19A 6PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:106,470

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Product details

Overview

IRLHS6342TRPBF from Infineon Technologies is a 30 V, 12 A N-channel HEXFET Power MOSFET in a 2 mm × 2 mm PQFN package with 15.5 mΩ R_DS(on) at V_GS = 4.5 V, optimized for high-efficiency DC-DC conversion in space-constrained power stages.

For engineers reviewing the IRLHS6342TRPBF datasheet, IRLHS6342TRPBF pinout, IRLHS6342TRPBF application, or IRLHS6342TRPBF equivalent, key selection criteria include low-profile thermal performance (R_θJC(Bottom) = 13 °C/W), fast switching (Q_g = 11 nC), and industrial-grade MSL1 qualification for automated SMT assembly.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low on-resistance and fast gate charge characteristics. Its 2 mm × 2 mm PQFN package features exposed bottom thermal pad and dual-source/drain terminals for reduced parasitic inductance and improved current sharing.

The device integrates a robust body diode with t_rr = 11–17 ns and Q_rr = 13–20 nC, enabling reliable synchronous rectification and unclamped inductive switching up to E_AS = 60 mJ at T_J = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V nominal input rails with 25% margin for transients
R_DS(on) @ 4.5 V	15.5 mΩ max - enables ≤1.4 W conduction loss at 12 A continuous drain current
Q_g	11 nC typical - allows efficient 1–2 MHz switching with moderate gate driver strength
I_D @ T_C = 25°C	12 A - limited by wirebond capacity, not die capability
R_θJC(Bottom)	13 °C/W max - delivers >3× better thermal resistance than SO-8 when mounted on 2 oz copper
t_rr	11–17 ns - minimizes reverse recovery loss in synchronous buck topologies
V_GS(th)	0.5–1.1 V - ensures turn-on compatibility with 3.3 V and 5 V logic-level gate drivers

Pinout & Package

IRLHS6342TRPBF uses a 6-pin PQFN (2 mm × 2 mm, 0.9 mm height) with exposed thermal pad on underside. Pin 1 is Gate (G), pins 2/4/5/6 are parallel Drain (D) terminals, and pins 3/4 are Source (S) terminals - enabling low-inductance, high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts 0–12 V logic-level drive; threshold voltage 0.5–1.1 V
D1–D6 (except D3)	Drain	Parallel high-current drain connections; pins 2,4,5,6 tied internally to drain metallization
S1/S2 (pins 3 & 4)	Source	Dual-source terminals reduce source inductance and improve switching stability
Thermal Pad (bottom)	Case / Thermal Reference	Electrically connected to Source; must be soldered to PCB ground plane for thermal and EMI control

Key Features

Feature	Design Value
Low R_DS(on)	15.5 mΩ @ 4.5 V enables <1.5 W conduction loss at full rated current
Low-profile PQFN	0.9 mm height allows integration into ultra-thin power modules and portable electronics
MSL1 rating	Moisture sensitivity level 1 permits unlimited floor life and standard reflow without baking
RoHS & Halogen-free	Complies with IPC-1752A Class 2; eliminates brominated flame retardants and lead
Low R_θJC(Bottom)	13 °C/W enables >50% higher power density vs. SO-8 under identical PCB layout

Applications

Point-of-Load Regulators

USB-C PD Power Delivery

Use Scenario: 3.3 V/5 V/12 V output stages in server VRMs and telecom intermediate bus converters.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck converter secondary side.

Use Value: 15.5 mΩ R_DS(on) reduces conduction loss by ≥35% versus comparable 30 V SO-8 MOSFETs at 10 A load.

Use Scenario: 20 V/3 A to 20 V/5 A programmable power supply outputs in portable chargers and docking stations.

IC Role / Device Role / Timing Role: High-side main switch in compact half-bridge or buck controller reference designs.

Use Value: 2 mm × 2 mm footprint saves ≥60% board area versus DFN3333 while maintaining 12 A thermal capability.

Motor Drive H-Bridges

LED Driver Current Switches

Use Scenario: 12 V brushed DC motor control in robotics, drones, and medical pumps.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg with integrated body diode for freewheeling.

Use Value: 11–17 ns t_rr limits shoot-through risk and reduces diode conduction loss during PWM dead-time.

Use Scenario: Constant-current switching in automotive interior lighting and smart home LED arrays.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch operating at 1–10 kHz.

Use Value: 0.5–1.1 V V_GS(th) ensures reliable turn-on with microcontroller GPIOs without level-shifting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SI2302DS-T1-GE3	R_DS(on) = 35 mΩ @ 4.5 V; SOT-23 package; 2.9 A I_D	Lower current rating and higher on-resistance limit use to sub-3 A loads	Select for cost-sensitive, low-power applications where 2 mm × 2 mm footprint is unnecessary
DMN3025LSD-13	R_DS(on) = 25 mΩ @ 4.5 V; 2 mm × 2 mm DFN; dual-N configuration	Includes complementary N+N pair but higher R_DS(on) reduces efficiency at >8 A	Choose when building half-bridge or dual-switch topologies requiring matched devices

Compared with SI2302DS-T1-GE3 and DMN3025LSD-13, IRLHS6342TRPBF delivers superior power density and thermal performance for 8–12 A DC-DC stages, while its single-die architecture simplifies layout and reduces gate drive complexity.

Availability

IRLHS6342TRPBF is available at Aetrix Electronics and suitable for point-of-load regulators, USB-C PD power delivery systems, motor drive H-bridges, and LED driver current switches requiring stable component supply and industrial-grade reliability.

Supply support for IRLHS6342TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRLHS6342TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current for IRLHS6342TRPBF at 70°C case temperature?

The maximum continuous drain current is 7.6 A when the bottom case temperature reaches 70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN package's internal wirebond structure-not the silicon die-and assumes proper PCB thermal design with 2 oz copper.

Does IRLHS6342TRPBF require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and prevent oscillation during switching. Typical values range from 1.8 Ω to 10 Ω depending on driver strength and layout parasitics. The datasheet specifies R_G = 1.8 Ω for switching time characterization, and gate resistance directly impacts turn-on delay (t_d(on)) and rise time (t_r).

Can IRLHS6342TRPBF be used in avalanche-rated circuits?

Yes-IRLHS6342TRPBF is characterized for unclamped inductive switching with E_AS = 60 mJ at T_J = 25°C. Avalanche energy decreases with rising junction temperature; the datasheet provides a derating curve showing E_AS ≈ 20 mJ at T_J = 125°C. Operation requires strict adherence to pulse width (<400 μs) and duty cycle (<2%) limits.

Is the thermal pad electrically isolated in the PQFN package?

No-the exposed thermal pad on the underside of the IRLHS6342TRPBF PQFN package is electrically connected to the Source terminal. It must be soldered to a PCB copper area tied to the circuit's source/reference ground to ensure both thermal performance and electrical integrity. Floating or insulated mounting degrades R_θJC and risks voltage breakdown.

IRLHS6342TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 6-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 15.5mOhm @ 8.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1019 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-PQFN (2x2)

IRLHS6342TRPBF FAQ

1.How can I place an order for IRLHS6342TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLHS6342TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLHS6342TRPBF reliable?

The price and inventory of IRLHS6342TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLHS6342TRPBF is usually 5 days.

3.What payment methods are accepted for IRLHS6342TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLHS6342TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLHS6342TRPBF?

IRLHS6342TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLHS6342TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLHS6342TRPBF?

For technical support, including IRLHS6342TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLHS6342TRPBF requirements.

6.How does Aetrix verify that IRLHS6342TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLHS6342TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLHS6342TRPBF meets industry standards.

7.What is the process for return or replacement of IRLHS6342TRPBF?

All IRLHS6342TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLHS6342TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLHS6342TRPBF part is unused and in its original packaging.

Return procedure for IRLHS6342TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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