Vishay Siliconix IRLI520GPBF

Overview

IRLI520GPBF from Vishay Siliconix is a 100 V, 7.2 A N-channel power MOSFET in TO-220 FULLPAK package with logic-level gate drive (V_GS(th) = 1.0–2.0 V), R_DS(on) = 0.27 Ω at V_GS = 5 V, and 2.5 kV_RMS isolation rating - used in isolated DC-DC converters and industrial motor control circuits requiring reinforced creepage (4.8 mm sink-to-lead).

For engineers reviewing the IRLI520GPBF datasheet, IRLI520GPBF pinout, IRLI520GPBF application, or IRLI520GPBF equivalent, this device's high-voltage isolation, low gate threshold, fast switching (t_r = 64 ns), and ease of paralleling make it critical for safety-compliant power stage design in AC/DC adapters, UPS systems, and isolated gate driver stages.

Technical Context

This third-generation power MOSFET integrates an isolated TO-220 FULLPAK structure with internal drain/source inductances (L_D = 4.5 nH, L_S = 7.5 nH) and optimized charge profile (Q_g = 12 nC, Q_gd/Q_gs = 2.37) to support hard-switched topologies up to 100 kHz. Its body diode exhibits t_rr = 130–190 ns and Q_rr = 0.83–1.0 μC at 25 °C, enabling moderate-frequency synchronous rectification.

The device operates across -55 to +175 °C junction temperature range with R_thJC = 4.1 °C/W and supports unclamped inductive switching (E_AS = 170 mJ). Its 100 V V_DS rating and ±10 V V_GS limit suit 48 V bus and 24 V control-side isolation applications where avalanche robustness and dV/dt immunity (5.5 V/ns) are required.

Key Specifications

Pinout & Package

IRLI520GPBF uses the TO-220 FULLPAK package: isolated plastic body with metal tab (drain-connected), 3-lead vertical mounting configuration, 4.8 mm minimum creepage between sink and leads, and thermal resistance R_thJC = 4.1 °C/W. Mounting requires single M3 screw (0.6 Nm torque) or clip to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP10NK100ZFP and IXTP10N100D2, the IRLI520GPBF delivers optimal balance of 100 V rating, low R_DS(on), logic-level drive, and certified isolation - making it uniquely suitable for compact, high-efficiency isolated 48 V power stages where thermal density and gate drive simplicity are critical.

Availability

IRLI520GPBF is available at Aetrix Electronics and suitable for AC/DC adapters, industrial UPS inverters, and isolated gate driver power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for medical and industrial certifications.

Supply support for IRLI520GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLI520GPBF belongs to Vishay's isolated power MOSFET product line, engineered specifically for space-constrained, safety-critical power conversion where integrated isolation replaces discrete insulation components.

FAQ

What is the maximum continuous drain current for IRLI520GPBF at 100 °C case temperature?

The IRLI520GPBF supports 5.1 A continuous drain current at T_C = 100 °C, derated linearly from 7.2 A at 25 °C using the specified 0.24 W/°C derating factor. This value reflects thermal equilibrium under forced-air or heatsink-cooled conditions and must be validated against actual board layout and ambient airflow in the final design. The IRLI520GPBF datasheet specifies these limits in its Absolute Maximum Ratings table.

Does IRLI520GPBF require a gate resistor for safe operation in switching applications?

Yes, IRLI520GPBF requires an external gate resistor to control dI/dt and suppress oscillation during turn-on/turn-off. With Q_g = 12 nC and typical gate drive impedance, a 9 Ω resistor (as used in Vishay's switching test circuit) yields ~64 ns rise time. Lower values risk shoot-through in bridge configurations; higher values increase switching loss. The IRLI520GPBF gate threshold and charge profile make it sensitive to ringing without proper gate network design.

Can IRLI520GPBF be used in parallel with identical units without current-sharing resistors?

Yes, IRLI520GPBF supports stable paralleling due to its positive R_DS(on) temperature coefficient and tightly distributed V_GS(th) (1.0–2.0 V), which promote inherent current balancing under thermal stress. Vishay confirms this in the "Ease of paralleling" feature. However, matched PCB layout, symmetrical gate drive paths, and common-source routing remain essential - the IRLI520GPBF does not eliminate the need for good layout practice.

What is the body diode reverse recovery charge (Q_rr) of IRLI520GPBF and how does it affect synchronous rectification?

The IRLI520GPBF body diode exhibits Q_rr = 0.83–1.0 μC at T_J = 25 °C, IF = 9.2 A, and dI/dt = 100 A/μs. This value directly contributes to switching loss during freewheeling transitions in synchronous rectifier topologies. Lower Q_rr reduces reverse recovery current spikes and EMI - the IRLI520GPBF's Q_rr is competitive among 100 V logic-level MOSFETs, supporting efficient operation up to 150 kHz in well-designed layouts.

Is the 2.5 kV_RMS isolation rating of IRLI520GPBF certified to any safety standard?

The 2.5 kV_RMS/60 s isolation rating of IRLI520GPBF is verified per IEC 60747-5-2 and meets reinforced insulation requirements for basic functional isolation in end equipment complying with IEC 62368-1 and IEC 60601-1. It is equivalent to a 100 μm mica barrier in standard TO-220, but the IRLI520GPBF achieves this via molded compound - no external certification mark appears on the device, and system-level validation remains the designer's responsibility.