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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLI530G

Name: IRLI530G
Brand: Vishay Siliconix
SKU: IRLI530G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLI530G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRLI530G.pdf

Description:: MOSFET N-CH 100V 9.7A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLI530G from Vishay Siliconix is a 100 V, 9.7 A N-channel power MOSFET in TO-220 FULLPAK package with logic-level gate drive (V_GS(th) = 1.0–2.0 V), R_DS(on) = 0.16 Ω at V_GS = 5 V, and 2.5 kV_RMS isolation for high-voltage industrial switch-mode power supplies and motor control circuits.

For engineers reviewing the IRLI530G datasheet, IRLI530G pinout, IRLI530G application, or IRLI530G equivalent, this device offers verified high-voltage isolation, fast switching (t_d(on) = 4.7 ns), low gate charge (Q_g = 28 nC), and thermal performance optimized for heatsink-mounted operation without additional insulation hardware.

Technical Context

This third-generation power MOSFET uses a ruggedized planar process to deliver stable R_DS(on) over temperature (ΔV_DS/T_J = 0.14 V/°C) and robust avalanche capability (E_AS = 250 mJ). Its isolated TO-220 FULLPAK construction integrates dielectric molding compound equivalent to a 100 µm mica barrier.

The device supports logic-level drive down to 4 V (R_DS(on) = 0.22 Ω), features low internal inductance (L_D = 4.5 nH, L_S = 7.5 nH), and includes an integral body diode with t_rr = 100–200 ns and Q_rr = 0.70–1.4 µC - enabling reliable unclamped inductive switching in DC-DC converters and H-bridge drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 60 V bus systems with 2× safety margin for transient clamping
R_DS(on) @ V_GS = 5 V	0.16 Ω - enables ≤1.5 W conduction loss at 9.7 A continuous drain current
Q_g	28 nC - reduces gate driver power demand and enables <100 ns total switching time
T_J Range	−55 °C to +175 °C - qualified for under-hood and industrial ambient environments
R_thJC	3.6 °C/W - allows 42 W power dissipation with ≤150 °C case-to-junction rise at TC = 25 °C
E_AS	250 mJ - sustains single-pulse inductive energy without failure in flyback or motor phase commutation
V_GS(th)	1.0–2.0 V - ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIO

Pinout & Package

IRLI530G is housed in a TO-220 FULLPAK package with electrically isolated tab (2.5 kV_RMS, 60 s), 4.8 mm sink-to-lead creepage, and standardized 3-pin leadframe. The molded compound provides low thermal resistance (R_thJC = 3.6 °C/W) while eliminating need for insulating washers in heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heatsink interface	Electrically isolated metal tab serves as high-current drain terminal and thermal path; rated for 2.5 kV_RMS isolation
Source	Reference node for gate drive and current sensing	Low-inductance source connection (L_S = 7.5 nH) minimizes switching oscillation during high dI/dt events
Gate	Control input for channel modulation	Logic-compatible threshold (1.0–2.0 V) enables direct MCU drive; Q_gs = 3.8 nC ensures fast turn-on with minimal overshoot

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates external insulation hardware; replaces 100 µm mica barrier with integrated molding compound
Logic-level gate drive	Guaranteed turn-on at V_GS = 4 V (R_DS(on) = 0.22 Ω), compatible with 3.3 V/5 V digital controllers
Fast switching performance	t_d(on) = 4.7 ns, t_r = 100 ns, t_d(off) = 22 ns - enables >500 kHz hard-switched SMPS designs
Rugged avalanche rating	E_AS = 250 mJ, I_AR = 9.7 A - supports reliable operation in unclamped inductive load circuits
Body diode recovery	t_rr = 100–200 ns, Q_rr = 0.70–1.4 µC - reduces switching loss and EMI in synchronous rectification

Applications

Industrial Motor Drives	Switch-Mode Power Supplies
Use Scenario: Half-bridge phase-leg switching in 24–48 V BLDC motor controllers with peak currents up to 39 A. IC Role / Device Role / Timing Role: High-side or low-side power switch with integrated isolated heatsink interface and fast body diode recovery. Use Value: Eliminates separate isolation hardware; 2.5 kV_RMS isolation and 175 °C T_J rating ensure reliability in dusty, high-temperature factory environments.	Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converters operating at 65–130 kHz. IC Role / Device Role / Timing Role: Main power switch handling repetitive avalanche stress during transformer reset cycles. Use Value: 250 mJ single-pulse avalanche energy and 4.2 mJ repetitive rating enable robust operation without snubber redesign.
DC-DC Converters	Power Distribution Switches
Use Scenario: High-efficiency 12 V → 5 V/3.3 V buck converter in telecom shelf management units. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch with low R_DS(on) and logic-level gate compatibility. Use Value: R_DS(on) = 0.16 Ω at 5 V drive reduces conduction loss by >30% vs. standard 10 V gate devices at same current density.	Use Scenario: Hot-swap and inrush current limiting in 48 V server backplanes and PoE++ infrastructure. IC Role / Device Role / Timing Role: Load switch with controlled turn-on via gate resistor and integrated avalanche protection. Use Value: 9.7 A continuous current and 39 A pulsed rating support high-power hot-plug events without external current limiting.

Industrial Motor Drives

Switch-Mode Power Supplies

Use Scenario: Half-bridge phase-leg switching in 24–48 V BLDC motor controllers with peak currents up to 39 A.

IC Role / Device Role / Timing Role: High-side or low-side power switch with integrated isolated heatsink interface and fast body diode recovery.

Use Value: Eliminates separate isolation hardware; 2.5 kV_RMS isolation and 175 °C T_J rating ensure reliability in dusty, high-temperature factory environments.

Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converters operating at 65–130 kHz.

IC Role / Device Role / Timing Role: Main power switch handling repetitive avalanche stress during transformer reset cycles.

Use Value: 250 mJ single-pulse avalanche energy and 4.2 mJ repetitive rating enable robust operation without snubber redesign.

DC-DC Converters

Power Distribution Switches

Use Scenario: High-efficiency 12 V → 5 V/3.3 V buck converter in telecom shelf management units.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch with low R_DS(on) and logic-level gate compatibility.

Use Value: R_DS(on) = 0.16 Ω at 5 V drive reduces conduction loss by >30% vs. standard 10 V gate devices at same current density.

Use Scenario: Hot-swap and inrush current limiting in 48 V server backplanes and PoE++ infrastructure.

IC Role / Device Role / Timing Role: Load switch with controlled turn-on via gate resistor and integrated avalanche protection.

Use Value: 9.7 A continuous current and 39 A pulsed rating support high-power hot-plug events without external current limiting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF530NPbF	Same V_DS (100 V) but higher R_DS(on) (0.19 Ω @ 5 V); non-isolated TO-220; no 2.5 kV_RMS rating	Requires external insulation hardware; unsuitable for high-isolation safety-critical designs	Select when cost sensitivity outweighs isolation requirement and board space permits added insulator
STP10NK50ZFP	Higher V_DS (500 V), lower ID (10 A), Zener-protected gate; TO-220FP package with insulated tab (2.5 kV_RMS)	Better suited for 400 V DC-link applications; slower switching (Q_g = 45 nC) limits high-frequency use	Select when system voltage exceeds 100 V but isolation and ruggedness remain critical

Compared with IRLI530G, IRF530NPbF lacks isolation and has higher on-resistance, increasing thermal stress in compact layouts; STP10NK50ZFP trades lower R_DS(on) and faster switching for higher voltage rating and reduced efficiency in 48 V systems.

Availability

IRLI530G is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, DC-DC converters, and power distribution switches requiring stable component supply and long-term manufacturability.

Supply support for IRLI530G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLI530G belongs to Vishay's isolated high-voltage power MOSFET product line, engineered for applications demanding galvanic isolation, logic-level drive, and rugged avalanche performance without external insulation.

FAQ

What is the maximum continuous drain current for IRLI530G at 100 °C case temperature?

The IRLI530G supports 6.9 A continuous drain current at T_C = 100 °C, derated linearly from 9.7 A at 25 °C using a factor of 0.28 W/°C. This rating assumes proper heatsinking and accounts for junction temperature limits up to 175 °C. The IRLI530G datasheet specifies these values in the Absolute Maximum Ratings table under "Continuous drain current".

Does IRLI530G require external insulation when mounted to a heatsink?

No, the IRLI530G does not require external insulation when mounted to a heatsink. Its TO-220 FULLPAK package provides 2.5 kV_RMS isolation (60 Hz, 60 s) and 4.8 mm creepage distance between drain (tab) and leads. The molding compound achieves insulation equivalent to a 100 µm mica barrier, eliminating need for insulating pads or washers in commercial-industrial applications.

What is the gate threshold voltage range for IRLI530G, and how does it affect microcontroller compatibility?

The IRLI530G has a gate threshold voltage range of 1.0 V to 2.0 V at T_J = 25 °C, measured at I_D = 250 µA. This logic-level specification ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIO outputs. The IRLI530G reliably switches at V_GS = 4 V (R_DS(on) = 0.22 Ω), making it compatible with low-voltage control interfaces without level-shifting circuitry.

Can IRLI530G be used in avalanche-rated circuits, and what are its key avalanche specifications?

Yes, the IRLI530G is rated for both single-pulse and repetitive avalanche operation. It delivers 250 mJ single-pulse avalanche energy (E_AS) and supports 9.7 A repetitive avalanche current (I_AR) with 4.2 mJ repetitive energy (E_AR). These ratings are validated per JEDEC standards and enable robust use in unclamped inductive switching applications such as motor phase legs and flyback transformer reset without external snubbers.

What is the typical reverse recovery time of the body diode in IRLI530G, and why does it matter in synchronous rectification?

The IRLI530G body diode exhibits a reverse recovery time (t_rr) of 100–200 ns at T_J = 25 °C, I_F = 15 A, and dI/dt = 100 A/µs. This fast recovery minimizes switching loss and voltage overshoot during commutation in synchronous buck or LLC converters. The associated Q_rr of 0.70–1.4 µC further reduces EMI generation and improves efficiency compared to slower diodes, making the IRLI530G suitable for high-frequency power stages.

IRLI530G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 5.8A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRLI530G FAQ

1.How can I place an order for IRLI530G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLI530G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLI530G reliable?

The price and inventory of IRLI530G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI530G is usually 5 days.

3.What payment methods are accepted for IRLI530G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI530G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLI530G?

IRLI530G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLI530G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLI530G?

For technical support, including IRLI530G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI530G requirements.

6.How does Aetrix verify that IRLI530G is sourced from the original manufacturer or authorized distributors?

All IRLI530G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI530G meets industry standards.

7.What is the process for return or replacement of IRLI530G?

All IRLI530G units undergo pre-shipment inspection (PSI). If there is an issue with IRLI530G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLI530G part is unused and in its original packaging.

Return procedure for IRLI530G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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