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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLI530GPBF

Name: IRLI530GPBF
Brand: Vishay Siliconix
SKU: IRLI530GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLI530GPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRLI530GPBF.pdf

Description:: MOSFET N-CH 100V 9.7A TO220-3

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Product details

Overview

IRLI530GPBF from Vishay Siliconix is a 100 V, 9.7 A N-channel power MOSFET in TO-220 FULLPAK package with logic-level gate drive (V_GS(th) = 1.0–2.0 V), R_DS(on) = 0.16 Ω at V_GS = 5 V, and 2.5 kV_RMS isolation for high-voltage industrial switching applications including AC-DC PFC stages and DC-DC primary-side switches.

For engineers reviewing the IRLI530GPBF datasheet, IRLI530GPBF pinout, IRLI530GPBF application, or IRLI530GPBF equivalent, this device's isolated TO-220 FULLPAK construction, fast switching (t_r = 100 ns, t_f = 48 ns), low Q_g = 28 nC, and rugged unclamped avalanche rating (E_AS = 250 mJ) are critical selection criteria for reliable high-voltage, medium-power switching designs.

Technical Context

This third-generation power MOSFET uses planar silicon technology optimized for high-voltage operation with enhanced ruggedness and thermal performance. Its isolated TO-220 FULLPAK package integrates high-dielectric-strength molding compound (equivalent to 100 µm mica) and achieves R_thJC = 3.6 °C/W for efficient heatsink coupling.

The device features logic-compatible gate drive (V_GS(th) ≤ 2.0 V, R_DS(on) specified at V_GS = 4 V and 5 V), fast body diode recovery (t_rr = 100–200 ns, Q_rr = 0.70–1.4 µC), and robust dV/dt immunity (5.5 V/ns peak diode recovery rate), enabling stable operation in hard-switched and inductive-load circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 80 V DC bus designs with 20 % margin for voltage transients
R_DS(on) @ V_GS = 5 V	0.16 Ω - enables <1.5 W conduction loss at 9.7 A continuous drain current
Q_g	28 nC - reduces gate drive power and enables use with standard logic-level drivers
E_AS	250 mJ - withstands single-pulse inductive energy without failure in unclamped switching
R_thJC	3.6 °C/W - allows >30 W power dissipation with modest heatsinking at T_C = 100 °C
t_r/t_f	100 ns / 48 ns - minimizes switching losses in 50–100 kHz SMPS topologies
V_GS(th)	1.0–2.0 V - ensures full enhancement with 3.3 V or 5 V microcontroller GPIO

Pinout & Package

IRLI530GPBF is housed in an isolated TO-220 FULLPAK package with creepage distance of 4.8 mm and 2.5 kV_RMS isolation. The tab is electrically connected to the drain, and mounting requires only a single screw or clip-no additional insulating hardware needed.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (Left)	Source (S)	Low-side return path; connects directly to PCB ground plane or source trace
Lead 2 (Center)	Drain (D)	High-voltage input/output node; tab is internally tied to Drain for thermal + electrical connection
Lead 3 (Right)	Gate (G)	Logic-level control input; requires <28 nC charge for full turn-on; sensitive to ESD

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates need for mica washers or insulating pads in commercial-industrial heatsink mounting
Logic-level gate drive	Operates fully enhanced with 3.3 V or 5 V controllers-no level-shifting required
Ruggedized avalanche rating	Rated for 250 mJ single-pulse avalanche energy-supports reliable operation under inductive fault conditions
Low Q_gd/Q_g ratio	Q_gd = 14 nC of total Q_g = 28 nC → 50 % - improves hard-switching immunity and reduces Miller-induced shoot-through risk
Fast body diode	t_rr = 100–200 ns and Q_rr = 0.70–1.4 µC enable use in synchronous rectification and freewheeling paths without external Schottky

Applications

AC-DC Power Factor Correction	Industrial DC-DC Converters
Use Scenario: Boost switch in 300–400 W offline PFC front-end operating at 65–100 kHz. IC Role / Device Role / Timing Role: High-side switching element handling full line-referenced AC input with 100 V blocking capability. Use Value: 0.16 Ω R_DS(on) and 28 nC Q_g minimize conduction + switching losses; 2.5 kV_RMS isolation simplifies heatsink grounding in Class I systems.	Use Scenario: Primary-side switch in 24 V input, 48 V output isolated forward or half-bridge converter for factory automation. IC Role / Device Role / Timing Role: Medium-power, medium-frequency (50–80 kHz) main power switch with integrated body diode for reset path. Use Value: 9.7 A continuous current and 250 mJ E_AS ensure reliability during load dump or short-circuit events; TO-220 FULLPAK enables direct bolt-down to metal chassis.
Motor Drive Half-Bridge Legs	High-Voltage LED Driver Switches
Use Scenario: Low-side switch in 24–48 V BLDC motor inverter stage driving 5–10 A RMS phase current. IC Role / Device Role / Timing Role: Fast-turning N-channel switch synchronized with complementary high-side driver. Use Value: 100 ns rise time and 48 ns fall time reduce transition losses; logic-level gate allows direct MCU GPIO drive without gate driver IC.	Use Scenario: Series switching element in constant-current LED driver for street lighting (72–120 V string voltage). IC Role / Device Role / Timing Role: High-voltage, medium-current PWM switch controlling LED string current up to 9.7 A. Use Value: 100 V V_DS rating accommodates 120 V string with margin; 0.16 Ω R_DS(on) limits thermal rise at 5 A typical operating current.

AC-DC Power Factor Correction

Industrial DC-DC Converters

Use Scenario: Boost switch in 300–400 W offline PFC front-end operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-side switching element handling full line-referenced AC input with 100 V blocking capability.

Use Value: 0.16 Ω R_DS(on) and 28 nC Q_g minimize conduction + switching losses; 2.5 kV_RMS isolation simplifies heatsink grounding in Class I systems.

Use Scenario: Primary-side switch in 24 V input, 48 V output isolated forward or half-bridge converter for factory automation.

IC Role / Device Role / Timing Role: Medium-power, medium-frequency (50–80 kHz) main power switch with integrated body diode for reset path.

Use Value: 9.7 A continuous current and 250 mJ E_AS ensure reliability during load dump or short-circuit events; TO-220 FULLPAK enables direct bolt-down to metal chassis.

Motor Drive Half-Bridge Legs

High-Voltage LED Driver Switches

Use Scenario: Low-side switch in 24–48 V BLDC motor inverter stage driving 5–10 A RMS phase current.

IC Role / Device Role / Timing Role: Fast-turning N-channel switch synchronized with complementary high-side driver.

Use Value: 100 ns rise time and 48 ns fall time reduce transition losses; logic-level gate allows direct MCU GPIO drive without gate driver IC.

Use Scenario: Series switching element in constant-current LED driver for street lighting (72–120 V string voltage).

IC Role / Device Role / Timing Role: High-voltage, medium-current PWM switch controlling LED string current up to 9.7 A.

Use Value: 100 V V_DS rating accommodates 120 V string with margin; 0.16 Ω R_DS(on) limits thermal rise at 5 A typical operating current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100ZFP	1000 V V_DS, 10 A, R_DS(on) = 0.95 Ω @ 10 V - higher voltage, much higher on-resistance, not logic-level	Suitable for 400–800 V DC link applications; requires 10 V gate drive; not drop-in for 100 V logic-driven designs	Select when higher blocking voltage is mandatory and gate drive is ≥10 V; avoid for 3.3/5 V control or low-loss 100 V switching.
IRF540NPBF	100 V V_DS, 33 A, R_DS(on) = 0.044 Ω @ 10 V - lower R_DS(on) but non-logic-level (V_GS(th) = 2–4 V), no isolation	Higher current capacity; requires 10 V gate drive; standard TO-220 (non-isolated) demands insulating hardware	Choose for higher current density where isolation is unnecessary and 10 V gate drive is available; not suitable for logic-level or isolated-mounting requirements.

Compared with STP10NK100ZFP and IRF540NPBF, the IRLI530GPBF uniquely combines 100 V rating, logic-level drive, 2.5 kV_RMS isolation, and 0.16 Ω R_DS(on)-making it optimal for space-constrained, safety-isolated, microcontroller-driven 100 V switching where thermal and layout simplicity are critical.

Availability

IRLI530GPBF is available at Aetrix Electronics and suitable for AC-DC PFC stages, industrial DC-DC converters, and motor drive half-bridge legs requiring stable component supply, long-term lifecycle support, and certified lead-free compliance.

Supply support for IRLI530GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power components.

The IRLI530GPBF belongs to Vishay's logic-level, isolated high-voltage MOSFET product line-designed specifically for commercial and industrial power conversion systems demanding simplified thermal management, enhanced safety isolation, and direct microcontroller interface.

FAQ

What is the maximum continuous drain current for IRLI530GPBF at 100 °C case temperature?

The IRLI530GPBF supports 6.9 A continuous drain current at T_C = 100 °C, derated linearly from 9.7 A at 25 °C using a 0.28 W/°C factor. This rating assumes proper heatsinking per the TO-220 FULLPAK's R_thJC = 3.6 °C/W specification and accounts for junction temperature limits up to 175 °C. Always verify thermal design with actual board layout and ambient conditions.

Does IRLI530GPBF require external insulation when mounted to a metal heatsink?

No, the IRLI530GPBF does not require external insulation when mounted to a metal heatsink. Its TO-220 FULLPAK package provides 2.5 kV_RMS isolation (60 s, 60 Hz) and 4.8 mm sink-to-lead creepage distance, eliminating the need for mica washers or silicone pads. The drain-connected tab can be safely bolted directly to grounded chassis or heatsinks in Class I equipment.

What is the gate threshold voltage range for IRLI530GPBF, and how does it affect microcontroller compatibility?

The IRLI530GPBF has a gate threshold voltage V_GS(th) of 1.0–2.0 V at I_D = 250 µA, ensuring full enhancement with standard 3.3 V or 5 V logic outputs. This logic-level characteristic allows direct drive from most microcontrollers, FPGAs, and gate drivers without level-shifting circuitry-reducing BOM count and layout complexity in compact power designs.

Can IRLI530GPBF be used in avalanche-mode operation, and what is its rated energy?

Yes, the IRLI530GPBF is rated for repetitive and single-pulse avalanche operation. It specifies 250 mJ single-pulse avalanche energy (E_AS) and 4.2 mJ repetitive avalanche energy (E_AR). These ratings are validated per JEDEC standards and support robust operation in inductive switching applications such as relay drivers, solenoid controls, and flyback snubbers where voltage overshoot may occur.

What are the key differences between IRLI530GPBF and standard TO-220 MOSFETs like IRF540N?

The IRLI530GPBF differs from standard TO-220 MOSFETs such as IRF540N in three critical ways: (1) it uses an isolated TO-220 FULLPAK package with 2.5 kV_RMS dielectric strength, (2) it is logic-level (V_GS(th) ≤ 2.0 V) versus IRF540N's 2–4 V threshold, and (3) its R_DS(on) is specified at V_GS = 4 V/5 V-not 10 V. These make IRLI530GPBF suitable for isolated, low-voltage-drive, safety-critical 100 V applications where IRF540N would require gate boosting and insulating hardware.

IRLI530GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 5.8A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRLI530GPBF FAQ

1.How can I place an order for IRLI530GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLI530GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLI530GPBF reliable?

The price and inventory of IRLI530GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI530GPBF is usually 5 days.

3.What payment methods are accepted for IRLI530GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI530GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLI530GPBF?

IRLI530GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLI530GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLI530GPBF?

For technical support, including IRLI530GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI530GPBF requirements.

6.How does Aetrix verify that IRLI530GPBF is sourced from the original manufacturer or authorized distributors?

All IRLI530GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI530GPBF meets industry standards.

7.What is the process for return or replacement of IRLI530GPBF?

All IRLI530GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLI530GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLI530GPBF part is unused and in its original packaging.

Return procedure for IRLI530GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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