Vishay Siliconix IRLI540G

Overview

IRLI540G from Vishay Siliconix is a 100 V, 17 A N-channel power MOSFET in TO-220 FULLPAK package with isolated construction, logic-level gate drive (V_GS(th) = 1.0–2.0 V), R_DS(on) = 0.077 Ω at V_GS = 5 V, and 2.5 kV_RMS isolation - used in industrial AC-DC power supplies for high-voltage switching and heatsink-mounted primary-side switching.

For engineers reviewing the IRLI540G datasheet, IRLI540G pinout, IRLI540G application, or IRLI540G equivalent, this device is selected for isolated high-side switching, avalanche-energy-tolerant unclamped inductive loads, and logic-driven 100 V power stages where thermal resistance (R_thJC = 3.1 °C/W) and fast switching (t_r = 170 ns, t_f = 80 ns) are critical.

Technical Context

The IRLI540G employs a third-generation silicon process optimized for ruggedized fast switching and low conduction loss. Its isolated TO-220 FULLPAK package integrates high-voltage insulation (2.5 kV_RMS, 4.8 mm creepage) directly into the molding compound, eliminating external insulators while maintaining low thermal resistance to heatsink.

It features logic-compatible gate drive (V_GS(th) ≤ 2.0 V, R_DS(on) specified at V_GS = 4 V/5 V), intrinsic body diode with trr = 130–260 ns and Q_rr = 1.5–2.9 μC, and robust avalanche capability (E_AS = 400 mJ) - enabling reliable operation in flyback, forward, and motor control topologies with unclamped inductive stress.

Key Specifications

Pinout & Package

IRLI540G uses the TO-220 FULLPAK package: isolated plastic housing with integral heatsink tab (drain-connected), 3-pin vertical leadframe, 4.8 mm sink-to-lead creepage, and 2.5 kV_RMS isolation rated for 60 s at 60 Hz. Mounting via single M3 screw (0.6 Nm torque) or clip directly to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP10NK100ZFP and IRF540N, the IRLI540G uniquely combines 100 V rating, logic-level gate, 2.5 kV isolation, and rugged avalanche performance - making it irreplaceable in isolated 5 V-driven industrial power switches where safety certification and board-level insulation are mandatory.

Availability

IRLI540G is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, automotive HVAC blower control, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and certified isolation compliance.

Supply support for IRLI540G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The IRLI540G belongs to Vishay's isolated power MOSFET product line, engineered specifically for safety-critical, high-voltage switching applications where galvanic isolation, logic-level drive, and avalanche ruggedness are mandatory - such as medical power supplies and industrial PLC outputs.

FAQ

What is the maximum continuous drain current for the IRLI540G at 100 °C case temperature?

The IRLI540G supports 12 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating from the 17 A rating at 25 °C reflects thermal limits of the TO-220 FULLPAK package. Designers must ensure heatsink design maintains case temperature ≤100 °C under worst-case load to sustain this current. The IRLI540G datasheet specifies linear derating factor of 0.32 W/°C above 25 °C ambient.

Does the IRLI540G require external insulation when mounted to a metal heatsink?

No, the IRLI540G does not require external insulation when mounted to a metal heatsink because its TO-220 FULLPAK package provides built-in 2.5 kV_RMS isolation between the drain (tab) and leads. The molding compound achieves insulation equivalent to a 100 µm mica barrier. This eliminates need for insulating pads or shoulder washers - a key advantage over standard TO-220 devices like the IRF540N.

What is the gate threshold voltage range for the IRLI540G, and how does it affect logic-level compatibility?

IRLI540G has a gate threshold voltage V_GS(th) range of 1.0 V to 2.0 V at T_J = 25 °C, ensuring full enhancement with 3.3 V or 5 V logic signals. This makes the IRLI540G compatible with microcontrollers, gate drivers, and PWM ICs without level-shifting circuitry. Unlike higher-threshold MOSFETs (e.g., IRF540N: 2–4 V), the IRLI540G guarantees reliable turn-on even at marginal logic-high voltages.

Can the IRLI540G be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the IRLI540G is rated for repetitive unclamped inductive switching with a single-pulse avalanche energy E_AS of 400 mJ at T_J = 25 °C. This is validated per test condition V_DD = 25 V, L = 2.1 mH, R_g = 25 Ω, I_AS = 17 A. The IRLI540G's ruggedized die design ensures consistent avalanche performance across temperature - critical for solenoid, relay, and motor drive applications where snubbers are omitted.

What are the key thermal resistance values for the IRLI540G, and how do they impact heatsink selection?

The IRLI540G has R_thJC = 3.1 °C/W (junction-to-case) and R_thJA = 65 °C/W (junction-to-ambient). Since the drain tab is the thermal path, heatsink selection must target R_thHS ≤ (T_J(max) − T_A) / P_D − R_thJC − R_thInterface. For 48 W dissipation at T_A = 50 °C and T_J = 175 °C, a heatsink with ≤1.2 °C/W total resistance (including thermal paste) is required - achievable with medium-profile extruded aluminum heatsinks.