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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLI630G

Name: IRLI630G
Brand: Vishay Siliconix
SKU: IRLI630G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLI630G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRLI630G.pdf

Description:: MOSFET N-CH 200V 6.2A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,647

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Product details

Overview

IRLI630G from Vishay Siliconix is a 200 V, 6.2 A N-channel power MOSFET in TO-220 FULLPAK package with isolated construction, logic-level gate drive (V_GS(th) = 1.0–2.0 V), R_DS(on) = 0.40 Ω at V_GS = 5 V, and 2.5 kV_RMS isolation rating - used in AC-DC front-end switching, DC-DC converter primary-side switches, and industrial motor control inverters.

For engineers reviewing the IRLI630G datasheet, IRLI630G pinout, IRLI630G application, or IRLI630G equivalent, key selection criteria include its high-voltage isolation capability, low gate threshold for 5 V microcontroller compatibility, avalanche ruggedness (E_AS = 125 mJ), thermal resistance (R_thJC = 3.6 °C/W), and ease of paralleling due to positive temperature coefficient of R_DS(on).

Technical Context

This third-generation power MOSFET employs planar V-groove silicon technology optimized for fast switching (t_d(on) = 8 ns, t_f = 33 ns) and robust unclamped inductive switching (I_AR = 6.2 A, E_EAR = 3.5 mJ). Its isolated TO-220 FULLPAK package integrates high-dielectric molding compound enabling 2.5 kV_RMS isolation without external insulation hardware.

The device features a built-in body diode with t_rr = 230–350 ns and Q_rr = 1.7–2.6 μC, and exhibits linear derating (0.28 W/°C) above T_C = 25 °C. Gate charge parameters (Q_g = 40 nC, Q_gd = 24 nC) support efficient hard-switching operation up to 100 kHz in flyback and forward converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 VAC rectified input with 20 % margin; suitable for universal-input offline SMPS
R_DS(on) @ V_GS = 5 V	0.40 Ω - enables <1.5 W conduction loss at 6.2 A; reduces heatsink requirements in compact designs
Q_g	40 nC - determines gate driver current demand (e.g., 2 A peak for 20 ns rise time); impacts switching loss scaling
E_AS	125 mJ - withstands single-pulse inductive energy without failure; eliminates need for external snubbers in relay drivers
R_thJC	3.6 °C/W - allows 35 W continuous dissipation at T_C = 25 °C; enables direct mounting to aluminum heatsinks
V_GS(th)	1.0–2.0 V - ensures full enhancement with 3.3 V or 5 V logic; eliminates level-shifting in microcontroller-driven gate circuits
I_D @ T_C = 100 °C	3.9 A - defines usable current in thermally constrained enclosures (e.g., sealed industrial drives)

Pinout & Package

IRLI630G uses the TO-220 FULLPAK package: isolated plastic housing with integral heatsink tab (drain-connected), 3-pin through-hole configuration, 15.87 mm height, 10.1 mm width, and 4.7 mm base thickness. The package provides 4.8 mm creepage between sink and leads and replaces mica-insulated TO-220 with simplified mechanical mounting (single screw or clip).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives logic-level voltage (0–5 V); requires ≤ 40 nC charge for full turn-on; sensitive to ESD (±100 nA leakage max)
D (Drain)	High-side power terminal	Connected to heatsink tab; carries full load current and withstands 200 V blocking; electrically isolated from case by 2.5 kV_RMS
S (Source)	Power return and reference node	Common return for gate drive and load; establishes local ground for driver IC; body diode anode

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates mica washers and insulating sleeves - reduces assembly steps and thermal interface resistance by ~25 % vs. standard TO-220
Logic-level gate drive	Operates fully enhanced at V_GS = 4 V - compatible with 3.3 V MCU GPIOs without gate driver ICs
Ruggedized avalanche rating	Rated for repetitive 6.2 A avalanche current - enables reliable operation in inductive load switching without external clamps
Low Q_gd/Q_g ratio	Q_gd = 24 nC / Q_g = 40 nC = 60 % - improves Miller immunity and enables stable hard-switching at high dV/dt
Positive R_DS(on) tempco	Enables inherent current sharing - allows parallel operation of multiple IRLI630G devices without current-balancing resistors

Applications

AC-DC Power Supply Front-End	Industrial Motor Control Inverter
Use Scenario: Switching element in 100–200 W universal-input offline flyback or forward converter. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer from rectified AC line to transformer. Use Value: 200 V rating accommodates 265 VAC + 10 % surge; 0.40 Ω R_DS(on) limits conduction loss to <1.5 W at full load; isolated package simplifies safety certification.	Use Scenario: Half-bridge high-side switch in 3-phase BLDC motor controller for HVAC blowers or pumps. IC Role / Device Role / Timing Role: High-voltage, medium-current switching node driving motor phase winding with PWM at 10–20 kHz. Use Value: 2.5 kV_RMS isolation prevents ground-loop faults in floating gate-drive systems; avalanche rating handles back-EMF transients during commutation.
DC-DC Converter Primary Switch	Relay/Solenoid Driver
Use Scenario: Main switching transistor in 24–48 V input, 12 V output isolated forward converter for telecom shelf power. IC Role / Device Role / Timing Role: Synchronized primary switch operating at fixed 200 kHz frequency with zero-voltage switching assist. Use Value: Low Q_g (40 nC) minimizes gate drive loss; fast t_f (33 ns) supports high-frequency operation while maintaining EMI compliance.	Use Scenario: Solid-state replacement for electromechanical relay controlling 120 VAC solenoid valves in factory automation. IC Role / Device Role / Timing Role: Unclamped inductive load switch handling 6.2 A peak coil current with 125 mJ single-pulse avalanche energy absorption. Use Value: Eliminates contact wear and bounce; 125 mJ E_AS absorbs turn-off energy without snubber; TO-220 FULLPAK enables direct heatsink mounting on DIN rail.

AC-DC Power Supply Front-End

Industrial Motor Control Inverter

Use Scenario: Switching element in 100–200 W universal-input offline flyback or forward converter.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer from rectified AC line to transformer.

Use Value: 200 V rating accommodates 265 VAC + 10 % surge; 0.40 Ω R_DS(on) limits conduction loss to <1.5 W at full load; isolated package simplifies safety certification.

Use Scenario: Half-bridge high-side switch in 3-phase BLDC motor controller for HVAC blowers or pumps.

IC Role / Device Role / Timing Role: High-voltage, medium-current switching node driving motor phase winding with PWM at 10–20 kHz.

Use Value: 2.5 kV_RMS isolation prevents ground-loop faults in floating gate-drive systems; avalanche rating handles back-EMF transients during commutation.

DC-DC Converter Primary Switch

Relay/Solenoid Driver

Use Scenario: Main switching transistor in 24–48 V input, 12 V output isolated forward converter for telecom shelf power.

IC Role / Device Role / Timing Role: Synchronized primary switch operating at fixed 200 kHz frequency with zero-voltage switching assist.

Use Value: Low Q_g (40 nC) minimizes gate drive loss; fast t_f (33 ns) supports high-frequency operation while maintaining EMI compliance.

Use Scenario: Solid-state replacement for electromechanical relay controlling 120 VAC solenoid valves in factory automation.

IC Role / Device Role / Timing Role: Unclamped inductive load switch handling 6.2 A peak coil current with 125 mJ single-pulse avalanche energy absorption.

Use Value: Eliminates contact wear and bounce; 125 mJ E_AS absorbs turn-off energy without snubber; TO-220 FULLPAK enables direct heatsink mounting on DIN rail.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	V_DS = 200 V, R_DS(on) = 0.22 Ω @ 10 V, Q_g = 32 nC, non-isolated TO-220	Lacks 2.5 kV_RMS isolation; requires external insulation; lower R_DS(on) but higher gate drive voltage needed	Select when isolation is handled at board level and lower conduction loss is prioritized over mounting simplicity
IRF640NPbF	V_DS = 200 V, R_DS(on) = 0.18 Ω @ 10 V, Q_g = 67 nC, non-isolated TO-220	No isolation rating; higher Q_g increases gate drive loss; V_GS(th) = 2–4 V - less compatible with 3.3 V logic	Choose for cost-sensitive designs where external insulation is already implemented and higher switching frequency is not required

Compared with STP20NM20 and IRF640NPbF, the IRLI630G trades slightly higher R_DS(on) for integrated high-voltage isolation, logic-level drive, and simplified thermal/mechanical integration - making it optimal for space-constrained, safety-critical, or rapid-prototype industrial power stages.

Availability

IRLI630G is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor controllers, and DC-DC converter primary-side switching requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRLI630G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRLI630G belongs to Vishay's isolated power MOSFET product line, engineered specifically for high-voltage switching applications where safety isolation, thermal efficiency, and logic-level drivability are critical design constraints.

FAQ

What is the maximum continuous drain current for IRLI630G at 100 °C case temperature?

The IRLI630G supports 3.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 6.2 A rating at 25 °C using the linear derating factor of 0.28 W/°C. Designers must ensure heatsink design maintains T_C ≤ 100 °C to sustain this current in IRLI630G-based circuits.

Does IRLI630G require external insulation when mounted to a metal heatsink?

No - the IRLI630G's TO-220 FULLPAK package provides 2.5 kV_RMS isolation between the drain-connected tab and all leads, eliminating the need for mica washers or insulating sleeves. This intrinsic isolation is verified per IEC 60747-5-2 and enables direct mechanical mounting to grounded heatsinks in IRLI630G applications.

Can IRLI630G be driven directly by a 3.3 V microcontroller GPIO?

Yes - the IRLI630G has a gate threshold voltage range of 1.0–2.0 V and is explicitly characterized for R_DS(on) at V_GS = 4 V and 5 V. A 3.3 V GPIO can fully enhance the device, delivering R_DS(on) ≤ 0.50 Ω, making it suitable for direct drive in low-power IRLI630G implementations without gate driver ICs.

What is the body diode reverse recovery charge (Q_rr) of IRLI630G?

The IRLI630G body diode exhibits Q_rr = 1.7–2.6 μC under test conditions of T_J = 25 °C, I_F = 9.0 A, and dI/dt = 100 A/μs. This parameter directly impacts turn-off losses in synchronous rectification or freewheeling paths, and is documented in the "Drain-Source Body Diode Characteristics" section of the IRLI630G datasheet.

Is IRLI630G lead (Pb)-free and RoHS-compliant?

Yes - the ordering variant IRLI630GPbF is explicitly designated as lead-free and complies with RoHS Directive 2011/65/EU. Vishay confirms material categorization per document 99912, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount reflow, though IRLI630G is through-hole mounted.

IRLI630G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 3.7A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRLI630G FAQ

1.How can I place an order for IRLI630G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLI630G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLI630G reliable?

The price and inventory of IRLI630G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI630G is usually 5 days.

3.What payment methods are accepted for IRLI630G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI630G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLI630G?

IRLI630G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLI630G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLI630G?

For technical support, including IRLI630G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI630G requirements.

6.How does Aetrix verify that IRLI630G is sourced from the original manufacturer or authorized distributors?

All IRLI630G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI630G meets industry standards.

7.What is the process for return or replacement of IRLI630G?

All IRLI630G units undergo pre-shipment inspection (PSI). If there is an issue with IRLI630G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLI630G part is unused and in its original packaging.

Return procedure for IRLI630G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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