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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLI630GPBF

Name: IRLI630GPBF
Brand: Vishay Siliconix
SKU: IRLI630GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLI630GPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRLI630GPBF.pdf

Description:: MOSFET N-CH 200V 6.2A TO220-3

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Product details

Overview

IRLI630GPBF from Vishay Siliconix is a 200 V, 6.2 A N-channel power MOSFET in TO-220 FULLPAK package with logic-level gate drive (V_GS(th) = 1.0–2.0 V), R_DS(on) = 0.40 Ω at V_GS = 5 V, and 2.5 kV_RMS isolation rating - designed for high-voltage DC-DC converters, motor control inverters, and industrial power supplies requiring reinforced insulation.

For engineers reviewing the IRLI630GPBF datasheet, IRLI630GPBF pinout, IRLI630GPBF application, or IRLI630GPBF equivalent, key selection criteria include its isolated TO-220 FULLPAK thermal performance (R_thJC = 3.6 °C/W), avalanche energy rating (E_AS = 125 mJ), and fast switching capability (t_r = 57 ns, t_f = 33 ns) under logic-level gate drive conditions.

Technical Context

This third-generation high-voltage MOSFET integrates an isolated package structure enabling direct heatsink mounting without mica insulators, achieving 4.8 mm sink-to-lead creepage distance and 2.5 kV_RMS isolation per 60 s at 60 Hz. Its low gate threshold (1.0–2.0 V) ensures compatibility with 3.3 V and 5 V microcontroller outputs.

The device features optimized dynamic parameters: Q_g = 40 nC, Q_gd = 24 nC, and C_iss = 1100 pF at V_DS = 25 V, supporting efficient hard-switching in 100–200 V bus applications. Body diode recovery (t_rr = 230–350 ns, Q_rr = 1.7–2.6 μC) is characterized for inductive load commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 V DC bus designs with 15% margin for voltage transients
R_DS(on) @ V_GS = 5 V	0.40 Ω - enables ≤1.5 W conduction loss at 6.2 A continuous drain current
Q_g	40 nC - determines gate driver power requirement and switching speed scalability
I_D (T_C = 25 °C)	6.2 A - defines maximum continuous current with adequate heatsinking at case temperature
E_AS	125 mJ - quantifies unclamped inductive switching robustness without external snubbers
R_thJC	3.6 °C/W - enables high-power dissipation (35 W) with minimal junction-to-heatsink temperature rise
V_GS(th)	1.0–2.0 V - ensures full enhancement using standard logic-level MCU GPIOs without level-shifting

Pinout & Package

IRLI630GPBF uses the TO-220 FULLPAK package: isolated plastic body with electrically insulated metal tab (drain), 3-pin through-hole configuration (G-D-S), 4.8 mm minimum creepage between sink and leads, and 3.6 °C/W junction-to-case thermal resistance. Mounting requires single M3 screw or clip.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives logic-level voltage (≥4 V) to fully enhance channel; input capacitance C_iss = 1100 pF affects driver sizing
Drain (D)	High-side power terminal	Connected to insulated metal tab; carries full load current and withstands 200 V; electrically isolated from heatsink
Source (S)	Reference/return terminal	Common return path for gate drive and load current; ties to system ground or low-side switch node

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates need for mica washers or insulating pads - reduces assembly cost and thermal interface resistance
Logic-level gate drive	V_GS(th) = 1.0–2.0 V enables direct drive from 3.3 V/5 V MCUs, reducing BOM count vs. gate drivers
High avalanche energy	E_AS = 125 mJ allows reliable operation in inductive switching circuits without external clamping
Fast body diode recovery	t_rr = 230–350 ns and Q_rr = 1.7–2.6 μC minimize switching losses during freewheeling in half-bridge topologies
Low thermal resistance	R_thJC = 3.6 °C/W supports 35 W power dissipation with <130 °C junction rise above heatsink temperature

Applications

Industrial Motor Drives	DC-DC Converters
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and pump systems. IC Role / Device Role / Timing Role: High-side N-channel switch in 200 V bus topology; synchronized with low-side FET via dead-time controlled gate signals. Use Value: Isolated tab enables direct heatsink mounting on shared chassis ground, simplifying EMI filtering and reducing thermal interface layers.	Use Scenario: Primary-side switch in non-isolated buck-derived DC-DC converters for factory automation I/O modules. IC Role / Device Role / Timing Role: Main power switch operating at 100–250 kHz; driven by PWM controller with logic-level output. Use Value: R_DS(on) = 0.40 Ω at 5 V gate drive minimizes conduction loss while maintaining efficiency >92% at 5 A output.
Power Supplies	Lighting Ballasts
Use Scenario: Switching element in active PFC boost stages for 100–240 VAC input industrial SMPS. IC Role / Device Role / Timing Role: Fast-switching MOSFET handling discontinuous conduction mode (DCM) with high dI/dt demands. Use Value: Q_gd/Q_gs ratio of 4.4 supports clean turn-off and reduces Miller-induced shoot-through risk.	Use Scenario: Resonant half-bridge switch in electronic HID lamp ballasts for street lighting. IC Role / Device Role / Timing Role: High-voltage switching device sustaining 200 V blocking and conducting 6.2 A peak lamp current. Use Value: 2.5 kV_RMS isolation meets IEC 61347-2-8 reinforced insulation requirements for Class I luminaires.

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and pump systems.

IC Role / Device Role / Timing Role: High-side N-channel switch in 200 V bus topology; synchronized with low-side FET via dead-time controlled gate signals.

Use Value: Isolated tab enables direct heatsink mounting on shared chassis ground, simplifying EMI filtering and reducing thermal interface layers.

Use Scenario: Primary-side switch in non-isolated buck-derived DC-DC converters for factory automation I/O modules.

IC Role / Device Role / Timing Role: Main power switch operating at 100–250 kHz; driven by PWM controller with logic-level output.

Use Value: R_DS(on) = 0.40 Ω at 5 V gate drive minimizes conduction loss while maintaining efficiency >92% at 5 A output.

Power Supplies

Lighting Ballasts

Use Scenario: Switching element in active PFC boost stages for 100–240 VAC input industrial SMPS.

IC Role / Device Role / Timing Role: Fast-switching MOSFET handling discontinuous conduction mode (DCM) with high dI/dt demands.

Use Value: Q_gd/Q_gs ratio of 4.4 supports clean turn-off and reduces Miller-induced shoot-through risk.

Use Scenario: Resonant half-bridge switch in electronic HID lamp ballasts for street lighting.

IC Role / Device Role / Timing Role: High-voltage switching device sustaining 200 V blocking and conducting 6.2 A peak lamp current.

Use Value: 2.5 kV_RMS isolation meets IEC 61347-2-8 reinforced insulation requirements for Class I luminaires.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	V_DS = 200 V, R_DS(on) = 0.22 Ω @ 10 V (not logic-level); V_GS(th) = 2–4 V; no isolation rating	Requires 10 V gate drive; unsuitable where 3.3 V MCU control or reinforced insulation is mandatory	Select only if higher gate voltage is available and isolation is handled externally
IRF640NPBF	V_DS = 200 V, R_DS(on) = 0.18 Ω @ 10 V; V_GS(th) = 2–4 V; standard TO-220 (non-isolated)	Lacks 2.5 kV_RMS isolation and logic-level drive; needs insulating hardware for heatsink mounting	Choose when isolation is unnecessary and gate drive ≥10 V is available

Compared with STP20NM20 and IRF640NPBF, the IRLI630GPBF uniquely combines logic-level gate drive, integrated 2.5 kV_RMS isolation, and TO-220 FULLPAK mechanical compatibility - eliminating external insulation and enabling direct MCU control in safety-critical 200 V systems.

Availability

IRLI630GPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and power supplies requiring stable component supply, long-term lifecycle support, and certified isolation performance.

Supply support for IRLI630GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLI630GPBF belongs to Vishay's high-voltage logic-level MOSFET family, engineered for applications demanding reinforced insulation, simplified thermal design, and direct microcontroller interfacing in 100–200 V power systems.

FAQ

What is the maximum continuous drain current for IRLI630GPBF at 100 °C case temperature?

The IRLI630GPBF supports 3.9 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using R_thJC = 3.6 °C/W and ambient conditions to ensure safe operation within the -55 to +150 °C range. The IRLI630GPBF maintains R_DS(on) stability across this range per Fig. 4.

Does IRLI630GPBF require external insulation when mounted to a heatsink?

No, the IRLI630GPBF does not require external insulation when mounted to a heatsink because its TO-220 FULLPAK package provides built-in 2.5 kV_RMS isolation between the drain (metal tab) and all other terminals. The molding compound achieves insulation equivalent to a 100 µm mica barrier, and the sink-to-lead creepage distance is 4.8 mm. This eliminates the need for mica washers or silicone pads in commercial-industrial applications, as confirmed in the product description and Package Information document 91359.

What is the gate-source threshold voltage range for IRLI630GPBF?

The gate-source threshold voltage (V_GS(th)) for IRLI630GPBF is specified as 1.0 V minimum to 2.0 V maximum at V_DS = V_GS and I_D = 250 µA. This logic-level range ensures full enhancement with 3.3 V or 5 V microcontroller outputs, distinguishing it from standard MOSFETs requiring ≥10 V drive. The typical transfer characteristic curve (Fig. 3) confirms strong transconductance (g_fs = 4.8 S) starting below 2 V, making the IRLI630GPBF suitable for low-voltage gate drive architectures.

Can IRLI630GPBF be used in avalanche-rated switching applications?

Yes, the IRLI630GPBF is rated for repetitive avalanche operation with I_AR = 6.2 A and E_AR = 3.5 mJ, and single-pulse avalanche energy of E_AS = 125 mJ (tested per Fig. 12). These ratings are validated under defined conditions (V_DD = 25 V, L = 2.4 mH, R_G = 25 Ω), confirming ruggedness in unclamped inductive switching. Designers must observe the linear derating factor (0.28 W/°C) and limit pulse width per Fig. 11 to avoid exceeding T_J(max) = 150 °C during avalanche events. The IRLI630GPBF data sheet explicitly lists these parameters in Absolute Maximum Ratings.

What are the key dynamic parameters that affect switching performance of IRLI630GPBF?

Key dynamic parameters for IRLI630GPBF include total gate charge Q_g = 40 nC, gate-drain charge Q_gd = 24 nC, and output capacitance C_oss = 220 pF at V_DS = 25 V. These values directly impact switching speed and driver requirements: Q_g determines gate driver current needed for target slew rate; Q_gd influences Miller plateau duration and noise immunity; C_oss affects turn-off energy and resonant behavior. Measured switching times - t_d(on) = 8 ns, t_r = 57 ns, t_d(off) = 38 ns, t_f = 33 ns - were obtained under standardized test conditions (V_DD = 100 V, I_D = 9.0 A, R_G = 6.0 Ω), confirming suitability for high-frequency power conversion using the IRLI630GPBF.

IRLI630GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 3.7A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRLI630GPBF FAQ

1.How can I place an order for IRLI630GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLI630GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLI630GPBF reliable?

The price and inventory of IRLI630GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI630GPBF is usually 5 days.

3.What payment methods are accepted for IRLI630GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI630GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLI630GPBF?

IRLI630GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLI630GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLI630GPBF?

For technical support, including IRLI630GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI630GPBF requirements.

6.How does Aetrix verify that IRLI630GPBF is sourced from the original manufacturer or authorized distributors?

All IRLI630GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI630GPBF meets industry standards.

7.What is the process for return or replacement of IRLI630GPBF?

All IRLI630GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLI630GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLI630GPBF part is unused and in its original packaging.

Return procedure for IRLI630GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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