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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLI640G

Name: IRLI640G
Brand: Vishay Siliconix
SKU: IRLI640G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLI640G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRLI640G.pdf

Description:: MOSFET N-CH 200V 9.9A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLI640G from Vishay Siliconix is a 200 V, 9.9 A N-channel power MOSFET in TO-220 FULLPAK package with logic-level gate drive (V_GS(th) = 1.0–2.0 V), R_DS(on) = 0.18 Ω at V_GS = 5 V, and 2.5 kV_RMS isolation for high-voltage industrial switching applications including AC-DC PFC stages and DC-DC primary-side switches.

For engineers reviewing the IRLI640G datasheet, IRLI640G pinout, IRLI640G application, or IRLI640G equivalent, this device is selected for isolated high-voltage switching where low gate drive voltage, rugged avalanche capability (E_AS = 290 mJ), and thermal performance (R_thJC = 3.1 °C/W) are critical design requirements.

Technical Context

The IRLI640G employs a third-generation silicon process optimized for fast switching and low conduction loss, with gate charge parameters (Q_g = 66 nC, Q_gd = 38 nC) enabling efficient operation in hard-switched topologies up to 100 kHz. Its isolated TO-220 FULLPAK construction eliminates need for mica insulators in heatsink mounting.

It features an integral body diode with t_rr = 310–470 ns and Q_rr = 3.2–4.8 μC, supporting moderate-frequency synchronous rectification or freewheeling in flyback and forward converters. Avalanche-rated (I_AR = 9.9 A, E_AR = 4.0 mJ) for unclamped inductive load handling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports 170 VAC mains-derived DC bus with 20% margin for surge and ripple
R_DS(on) @ V_GS = 5 V	0.18 Ω - Enables ≤1.0 W conduction loss at 9.9 A continuous drain current
Q_g	66 nC - Determines gate driver power requirement (~0.66 mW per 100 kHz switch cycle at 10 V swing)
E_AS	290 mJ - Withstands single-pulse inductive energy without failure in PFC or motor drive snubberless designs
R_thJC	3.1 °C/W - Allows 40 W dissipation with ≤125 °C junction rise above 25 °C case temperature
V_GS(th)	1.0–2.0 V - Fully enhanced by standard 3.3 V or 5 V logic-level microcontroller GPIO
t_r/t_f	83 ns / 52 ns - Supports <100 ns transition times for reduced switching loss in high-frequency SMPS

Pinout & Package

IRLI640G uses the TO-220 FULLPAK package: isolated plastic body with metal tab (drain) electrically insulated from leads, 4.8 mm creepage between sink and lead, 2.5 kV_RMS isolation rating, and M3 screw-mount compatibility.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Logic-level compatible; requires ≤2.0 V to turn on; driven via 4.6 Ω resistor for 8.0 ns t_d(on)
D (Drain)	High-side switched node	Connected to heatsink tab; electrically isolated at 2.5 kV_RMS; carries full load current and switching transients
S (Source)	Power return reference	Low-inductance source path (L_S = 7.5 nH); referenced to driver ground; body diode anode

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates external insulation hardware-reduces BOM count and assembly cost in commercial/industrial power supplies
Logic-level gate drive	Operates fully enhanced from 3.3 V or 5 V MCU outputs-no level-shifting circuitry required
Rugged avalanche rating	290 mJ single-pulse and 4.0 mJ repetitive avalanche energy-enables reliable operation in inductive load switching without snubbers
Low thermal resistance	R_thJC = 3.1 °C/W-delivers 40 W power dissipation with minimal heatsink size in space-constrained designs
Fast body diode recovery	t_rr = 310–470 ns and Q_rr = 3.2–4.8 μC-minimizes reverse recovery loss in discontinuous-mode flyback converters

Applications

Industrial AC-DC Power Supplies	Server & Telecom Rectification
Use Scenario: Primary-side switch in active PFC boost stage of 500–1000 W industrial power supply operating from 85–264 VAC input. IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET switching at 65–100 kHz with zero-voltage switching assist. Use Value: 0.18 Ω R_DS(on) reduces conduction loss by ~35% vs. comparable 0.28 Ω devices; 2.5 kV_RMS isolation enables direct heatsink mounting without insulator.	Use Scenario: Primary-side switch in LLC resonant converter for 12 V/48 V server PSU with high efficiency and low EMI requirements. IC Role / Device Role / Timing Role: Hard-switched high-side switch during dead-time intervals; handles peak currents up to 17 A. Use Value: 66 nC total gate charge enables clean turn-on with standard gate drivers; 310–470 ns body diode t_rr limits shoot-through risk during commutation.
Motor Drive Inverters	Renewable Energy Converters
Use Scenario: Low-side switch in 3-phase inverter driving 1–3 kW BLDC motor in HVAC or pump control systems. IC Role / Device Role / Timing Role: Synchronized PWM-controlled N-channel switch with integrated body diode freewheeling. Use Value: 9.9 A continuous current rating supports 1.5× motor stall current; 290 mJ E_AS withstands inductive kickback during emergency stop.	Use Scenario: DC-DC boost switch in solar microinverter or battery storage DC optimizer operating up to 200 V DC input. IC Role / Device Role / Timing Role: Unclamped inductive switching element subject to variable irradiance-induced current transients. Use Value: Repetitive avalanche rating (I_AR = 9.9 A, E_AR = 4.0 mJ) ensures long-term reliability under partial shading or rapid irradiance changes.

Industrial AC-DC Power Supplies

Server & Telecom Rectification

Use Scenario: Primary-side switch in active PFC boost stage of 500–1000 W industrial power supply operating from 85–264 VAC input.

IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET switching at 65–100 kHz with zero-voltage switching assist.

Use Value: 0.18 Ω R_DS(on) reduces conduction loss by ~35% vs. comparable 0.28 Ω devices; 2.5 kV_RMS isolation enables direct heatsink mounting without insulator.

Use Scenario: Primary-side switch in LLC resonant converter for 12 V/48 V server PSU with high efficiency and low EMI requirements.

IC Role / Device Role / Timing Role: Hard-switched high-side switch during dead-time intervals; handles peak currents up to 17 A.

Use Value: 66 nC total gate charge enables clean turn-on with standard gate drivers; 310–470 ns body diode t_rr limits shoot-through risk during commutation.

Motor Drive Inverters

Renewable Energy Converters

Use Scenario: Low-side switch in 3-phase inverter driving 1–3 kW BLDC motor in HVAC or pump control systems.

IC Role / Device Role / Timing Role: Synchronized PWM-controlled N-channel switch with integrated body diode freewheeling.

Use Value: 9.9 A continuous current rating supports 1.5× motor stall current; 290 mJ E_AS withstands inductive kickback during emergency stop.

Use Scenario: DC-DC boost switch in solar microinverter or battery storage DC optimizer operating up to 200 V DC input.

IC Role / Device Role / Timing Role: Unclamped inductive switching element subject to variable irradiance-induced current transients.

Use Value: Repetitive avalanche rating (I_AR = 9.9 A, E_AR = 4.0 mJ) ensures long-term reliability under partial shading or rapid irradiance changes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500 V V_DS, higher R_DS(on) = 0.22 Ω @ 10 V, non-isolated TO-220FP	Requires external insulation; better for >300 V bus; less suitable for logic-level drive	Select when higher voltage margin is needed and isolation can be added externally
IRF640NPbF	200 V V_DS, R_DS(on) = 0.18 Ω @ 10 V, non-isolated TO-220, V_GS(th) = 2–4 V	Not logic-level; requires ≥10 V gate drive; no isolation; higher thermal resistance	Select only if gate drive is ≥10 V and heatsink isolation is already implemented

Compared with STP20NM50FP and IRF640NPbF, the IRLI640G uniquely combines logic-level drive, 2.5 kV_RMS isolation, and 200 V rating-making it optimal for compact, insulated, low-drive-voltage industrial power stages where layout simplicity and thermal efficiency are prioritized.

Availability

IRLI640G is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server/telecom rectification, and motor drive inverters requiring stable component supply and long-lifecycle support.

Supply support for IRLI640G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power components.

The IRLI640G belongs to Vishay's isolated high-voltage power MOSFET family, engineered for industrial and commercial power conversion where electrical isolation, logic-level drive, and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current for the IRLI640G at 100 °C case temperature?

The IRLI640G supports 6.3 A continuous drain current at T_C = 100 °C, derated linearly from 9.9 A at 25 °C using a factor of 0.32 W/°C. This reflects real-world thermal constraints in enclosed industrial enclosures where heatsink ambient may exceed 75 °C. The IRLI640G datasheet specifies this limit under steady-state conduction with proper mounting torque (0.6 Nm for M3 screw).

Does the IRLI640G require external insulation when mounted to a heatsink?

No-the IRLI640G does not require external insulation when mounted to a heatsink because its TO-220 FULLPAK package provides 2.5 kV_RMS isolation between the drain (tab) and leads, with 4.8 mm creepage distance. This replaces the need for mica washers or silicone pads in commercial-industrial applications, as confirmed in Vishay document 91314. The IRLI640G achieves isolation equivalent to a 100 µm mica barrier.

What is the gate threshold voltage range for the IRLI640G, and how does it affect microcontroller interfacing?

The IRLI640G has a gate threshold voltage V_GS(th) of 1.0–2.0 V at I_D = 250 µA, enabling full enhancement with standard 3.3 V or 5 V logic outputs. This allows direct connection to MCU GPIO pins without level shifters. The IRLI640G remains fully on across temperature and manufacturing variation within this range, ensuring robust turn-on in industrial environments where supply rails may sag.

Can the IRLI640G be used in avalanche mode, and what are its rated avalanche energies?

Yes-the IRLI640G is rated for both single-pulse and repetitive avalanche operation: E_AS = 290 mJ (single pulse, 300 µs, 2% duty cycle) and E_AR = 4.0 mJ (repetitive, pulse width limited by T_J(max)). These values are measured per Vishay test conditions (V_DD = 25 V, L = 4.4 mH, R_G = 25 Ω). The IRLI640G is designed for unclamped inductive switching in PFC and motor drive applications where snubberless operation is preferred.

What is the typical body diode reverse recovery time (t_rr) of the IRLI640G, and why does it matter in flyback converters?

At T_J = 25 °C, I_F = 17 A, and dI/dt = 100 A/µs, the IRLI640G body diode exhibits t_rr = 310–470 ns. This fast recovery minimizes reverse recovery loss and associated EMI in discontinuous conduction mode (DCM) flyback converters. Because the IRLI640G integrates this diode, designers avoid discrete diode placement and parasitic inductance-critical for maintaining efficiency and stability in compact 50–100 W adapters.

IRLI640G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 5.9A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRLI640G FAQ

1.How can I place an order for IRLI640G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLI640G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLI640G reliable?

The price and inventory of IRLI640G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI640G is usually 5 days.

3.What payment methods are accepted for IRLI640G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI640G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLI640G?

IRLI640G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLI640G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLI640G?

For technical support, including IRLI640G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI640G requirements.

6.How does Aetrix verify that IRLI640G is sourced from the original manufacturer or authorized distributors?

All IRLI640G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI640G meets industry standards.

7.What is the process for return or replacement of IRLI640G?

All IRLI640G units undergo pre-shipment inspection (PSI). If there is an issue with IRLI640G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLI640G part is unused and in its original packaging.

Return procedure for IRLI640G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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