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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLIZ24GPBF

Name: IRLIZ24GPBF
Brand: Vishay Siliconix
SKU: IRLIZ24GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLIZ24GPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRLIZ24GPBF.pdf

Description:: MOSFET N-CHANNEL 60V 14A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLIZ24GPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220 FULLPAK package, rated for 60 V V_DS, 0.10 Ω R_DS(on) at V_GS = 5 V, and 14 A continuous drain current at T_C = 25 °C. It delivers fast switching (t_r = 110 ns), high-voltage isolation (2.5 kV_RMS), and integrated body diode recovery (t_rr = 130–260 ns), enabling use in isolated DC-DC converters and industrial motor control.

For engineers reviewing the IRLIZ24GPBF datasheet, IRLIZ24GPBF pinout, IRLIZ24GPBF application, or IRLIZ24GPBF equivalent, this device is selected for high-reliability, thermally efficient, isolated-switching roles where logic-level gate drive, low conduction loss, and avalanche ruggedness are critical - especially in commercial-industrial power supplies and solid-state relay replacements.

Technical Context

This third-generation power MOSFET uses planar silicon technology optimized for low R_DS(on) and fast switching with controlled Q_gd/Q_gs ratio (12 nC / 4.5 nC). Its TO-220 FULLPAK construction integrates high-voltage isolation via molded compound, eliminating external insulation hardware while maintaining 4.1 °C/W junction-to-case thermal resistance.

The device features a robust body diode with 1.5 V forward drop at 14 A and 100 mJ single-pulse avalanche energy rating. Gate threshold voltage is tightly specified (1.0–2.0 V), ensuring reliable turn-on with 4–5 V logic drivers, and its dV/dt immunity (4.5 V/ns) supports stable operation in noisy inductive switching environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V bus systems and flyback primary-side switching
R_DS(on) @ V_GS = 5 V	0.10 Ω - Enables ≤1.2 W conduction loss at 14 A, reducing heatsink requirements
Q_g	18 nC - Low total gate charge supports efficient 100–500 kHz PWM operation with standard gate drivers
I_D (continuous, T_C = 25 °C)	14 A - Sustains full-load current in compact TO-220-based power stages without derating
E_AS	100 mJ - Withstands unclamped inductive energy in relay replacement and solenoid driving
R_thJC	4.1 °C/W - Enables direct heatsink mounting with predictable thermal margin under 37 W P_D
V_GS(th)	1.0–2.0 V - Ensures guaranteed turn-on with 3.3 V or 5 V microcontroller GPIOs

Pinout & Package

IRLIZ24GPBF uses the TO-220 FULLPAK package - an isolated variant of TO-220 with integral high-voltage molding (2.5 kV_RMS isolation), 4.8 mm sink-to-lead creepage, and exposed drain tab for direct heatsink attachment. Mounting requires only one M3 screw (0.6 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current output terminal / heat transfer surface	Electrically connected to package tab; must be insulated from chassis unless referenced to system ground
Source	Power return path / reference node for gate drive	Serves as common return for load current and gate driver ground; low-inductance layout critical for EMI control
Gate	Control input for channel conduction	Logic-level compatible (V_GS(th) ≤ 2.0 V); requires <18 nC charge for full enhancement

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates need for mica washers or insulating pads - reduces BOM count and assembly steps in AC/DC and isolated DC-DC designs
Logic-level gate drive	Operates fully enhanced with 4–5 V gate voltage, enabling direct interface with MCU GPIOs or low-voltage PWM controllers
Low Q_gd/Q_gs ratio (2.67)	Improves switching controllability and reduces Miller-induced shoot-through risk in half-bridge configurations
100 mJ avalanche energy rating	Supports reliable operation in inductive load switching without external snubbers in SSR and solenoid driver applications
4.1 °C/W R_thJC	Enables >30 W dissipation with modest heatsinking - suitable for space-constrained industrial power modules

Applications

Industrial Motor Control	Isolated DC-DC Converters
Use Scenario: Driving 24–48 V brushed DC motors in PLC I/O modules and valve actuators. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor direction and braking via PWM. Use Value: Logic-level gate enables direct MCU control; 100 mJ E_AS absorbs inductive kickback during rapid PWM transitions.	Use Scenario: Primary-side switch in 30–60 W isolated flyback or forward converters for industrial sensors and gateways. IC Role / Device Role / Timing Role: Main power switch synchronizing with transformer primary winding. Use Value: 2.5 kV_RMS isolation eliminates external barrier components; 0.10 Ω R_DS(on) minimizes conduction loss at 100–250 kHz.
Solid-State Relay Replacement	Hot-Swap Power Controllers
Use Scenario: Replacing electromechanical relays in HVAC control panels and building automation systems. IC Role / Device Role / Timing Role: Bidirectional switching element (with external diode) handling resistive and inductive loads up to 10 A. Use Value: TO-220 FULLPAK isolation meets reinforced insulation requirements; 14 A I_D supports 10 A load with safety margin.	Use Scenario: Inrush current limiting and fault protection in 12–48 V backplane power distribution units. IC Role / Device Role / Timing Role: Hot-swap FET controlling power rail sequencing and overcurrent shutdown. Use Value: Fast t_r/t_f (110 ns / 41 ns) enables precise soft-start timing; low V_GS(th) ensures predictable turn-on during brownout conditions.

Industrial Motor Control

Isolated DC-DC Converters

Use Scenario: Driving 24–48 V brushed DC motors in PLC I/O modules and valve actuators.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor direction and braking via PWM.

Use Value: Logic-level gate enables direct MCU control; 100 mJ E_AS absorbs inductive kickback during rapid PWM transitions.

Use Scenario: Primary-side switch in 30–60 W isolated flyback or forward converters for industrial sensors and gateways.

IC Role / Device Role / Timing Role: Main power switch synchronizing with transformer primary winding.

Use Value: 2.5 kV_RMS isolation eliminates external barrier components; 0.10 Ω R_DS(on) minimizes conduction loss at 100–250 kHz.

Solid-State Relay Replacement

Hot-Swap Power Controllers

Use Scenario: Replacing electromechanical relays in HVAC control panels and building automation systems.

IC Role / Device Role / Timing Role: Bidirectional switching element (with external diode) handling resistive and inductive loads up to 10 A.

Use Value: TO-220 FULLPAK isolation meets reinforced insulation requirements; 14 A I_D supports 10 A load with safety margin.

Use Scenario: Inrush current limiting and fault protection in 12–48 V backplane power distribution units.

IC Role / Device Role / Timing Role: Hot-swap FET controlling power rail sequencing and overcurrent shutdown.

Use Value: Fast t_r/t_f (110 ns / 41 ns) enables precise soft-start timing; low V_GS(th) ensures predictable turn-on during brownout conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ24NPBF	Same TO-220 package but non-isolated; R_DS(on) = 0.07 Ω @ 10 V, V_GS(th) = 2–4 V	Requires external insulation for high-voltage isolation; not suitable for reinforced insulation designs	Select when isolation is handled externally and lower R_DS(on) at 10 V drive is prioritized
STP60NF06L	TO-220, logic-level, 60 V, R_DS(on) = 0.018 Ω @ 5 V, but no isolation rating	Lacks 2.5 kV_RMS isolation; higher gate charge (Q_g = 90 nC) limits high-frequency use	Choose for ultra-low-loss 5 V-driven applications where isolation is not required and thermal design accommodates higher Q_g

Compared with IRLIZ24GPBF, IRFZ24NPBF offers lower on-resistance but no built-in isolation, requiring additional insulation hardware; STP60NF06L provides significantly lower R_DS(on) but lacks isolation and has triple the gate charge, making it less suitable for high-frequency isolated topologies where IRLIZ24GPBF's balance of isolation, speed, and logic compatibility is essential.

Availability

IRLIZ24GPBF is available at Aetrix Electronics and suitable for industrial motor control, isolated DC-DC converters, and solid-state relay replacement requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRLIZ24GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRLIZ24GPBF belongs to Vishay's logic-level power MOSFET family designed specifically for isolated, space-constrained, and thermally demanding commercial-industrial power switching - emphasizing integration, ruggedness, and ease of thermal management.

FAQ

What is the maximum continuous drain current for IRLIZ24GPBF at 100 °C case temperature?

The IRLIZ24GPBF supports 10 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the TO-220 FULLPAK package's 4.1 °C/W R_thJC and 37 W maximum power dissipation. Designers must ensure heatsink selection maintains case temperature ≤100 °C under worst-case load and ambient conditions to sustain this current rating. The IRLIZ24GPBF datasheet confirms this value in the "Continuous drain current" row under TC = 100 °C.

Does IRLIZ24GPBF have a built-in body diode, and what are its key parameters?

Yes, the IRLIZ24GPBF integrates a monolithic body diode with typical forward voltage of 1.5 V at 14 A and 25 °C, reverse recovery time of 130–260 ns, and reverse recovery charge of 0.75–1.5 μC. These values are measured under standardized conditions (T_J = 25 °C, I_F = 17 A, dI/dt = 100 A/μs) and enable reliable freewheeling in inductive switching circuits. The IRLIZ24GPBF body diode characteristics are fully specified in the "Drain-Source Body Diode Characteristics" section of its datasheet.

Can IRLIZ24GPBF be used with 3.3 V microcontroller GPIOs for gate drive?

Yes, the IRLIZ24GPBF is explicitly designed for logic-level gate drive, with gate threshold voltage V_GS(th) specified from 1.0 V to 2.0 V. At 3.3 V, the device achieves full enhancement well within its safe operating area, delivering its rated R_DS(on) of 0.10 Ω. Its low total gate charge (18 nC) further ensures fast switching with minimal driver strength - confirming that IRLIZ24GPBF is suitable for direct interface with 3.3 V MCUs without level-shifting circuitry.

What is the isolation voltage rating of IRLIZ24GPBF, and how is it implemented?

The IRLIZ24GPBF provides 2.5 kV_RMS isolation for 60 seconds at 60 Hz between drain (tab) and source/gate terminals, achieved through its TO-220 FULLPAK molded package construction. This isolation replaces the need for external mica or silicone insulators and matches the performance of a 100 μm mica barrier. The creepage distance from sink to lead is 4.8 mm, satisfying reinforced insulation requirements in many industrial safety standards. This isolation is intrinsic to the IRLIZ24GPBF package and verified per Vishay's qualification testing.

How does the avalanche energy rating of IRLIZ24GPBF impact its use in inductive load switching?

The IRLIZ24GPBF is rated for 100 mJ single-pulse avalanche energy (E_AS), allowing it to safely absorb inductive energy during unclamped switching events - such as relay coil de-energization or motor commutation faults. This ruggedness eliminates the need for external snubber networks in many industrial control applications, simplifying design and improving reliability. The IRLIZ24GPBF E_AS value is validated under defined test conditions (V_DD = 25 V, L = 595 μH, I_AS = 14 A) and directly supports its use in solid-state relay and solenoid driver implementations.

IRLIZ24GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 8.4A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 37W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

IRLIZ24GPBF FAQ

1.How can I place an order for IRLIZ24GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLIZ24GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLIZ24GPBF reliable?

The price and inventory of IRLIZ24GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLIZ24GPBF is usually 5 days.

3.What payment methods are accepted for IRLIZ24GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLIZ24GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLIZ24GPBF?

IRLIZ24GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLIZ24GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLIZ24GPBF?

For technical support, including IRLIZ24GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLIZ24GPBF requirements.

6.How does Aetrix verify that IRLIZ24GPBF is sourced from the original manufacturer or authorized distributors?

All IRLIZ24GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLIZ24GPBF meets industry standards.

7.What is the process for return or replacement of IRLIZ24GPBF?

All IRLIZ24GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLIZ24GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLIZ24GPBF part is unused and in its original packaging.

Return procedure for IRLIZ24GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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