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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLIZ34G

Name: IRLIZ34G
Brand: Vishay Siliconix
SKU: IRLIZ34G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLIZ34G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRLIZ34G.pdf

Description:: MOSFET N-CH 60V 20A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLIZ34G from Vishay Siliconix is a 60 V, 20 A N-channel logic-level power MOSFET in TO-220 FULLPAK package with isolated construction, 2.5 kVRMS isolation rating, and R_DS(on) = 0.050 Ω at V_GS = 5 V. It serves as a high-reliability switching element in DC-DC converters, motor drives, and industrial power supplies where galvanic isolation and low gate drive voltage are required.

For engineers reviewing the IRLIZ34G datasheet, IRLIZ34G pinout, IRLIZ34G application, or IRLIZ34G equivalent, this device is selected for high-voltage isolated switching in commercial-industrial systems requiring fast turn-on (14 ns delay), low Q_g (35 nC), and robust avalanche energy handling (200 mJ).

Technical Context

The IRLIZ34G employs a third-generation silicon process optimized for low R_DS(on) and fast switching while maintaining ruggedness under unclamped inductive switching (UIS). Its isolated TO-220 FULLPAK package integrates a high-dielectric molding compound enabling 2.5 kVRMS isolation without external insulation hardware.

It features logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), specified R_DS(on) at both 4 V and 5 V, and intrinsic body diode with t_rr = 90–180 ns and Q_rr = 0.65–1.3 μC - supporting synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for use in 48 V bus and sub-60 V industrial power stages
R_DS(on) @ V_GS = 5 V	0.050 Ω - Enables ≤1.2 W conduction loss at 20 A continuous drain current
Q_g	35 nC - Supports efficient 100–500 kHz switching with moderate gate driver strength (e.g., TC4427)
E_AS	200 mJ - Withstands single-pulse inductive energy events without failure in motor control or SMPS
V_GS(th)	1.0–2.0 V - Fully enhanced by standard 3.3 V or 5 V logic outputs, eliminating level-shifting circuitry
T_J Range	−55 to +175 °C - Rated for extended thermal operation in enclosed industrial enclosures and automotive under-hood proximity
R_thJC	3.6 °C/W - Enables direct heatsink mounting with clip or M3 screw for >30 W power dissipation capability

Pinout & Package

IRLIZ34G uses the TO-220 FULLPAK package: isolated plastic housing with integral heatsink tab (drain-connected), 3-terminal configuration, and creepage distance of 4.8 mm between sink and leads. Mounting via single M3 screw or clip enables rapid thermal interface to external heatsinks without insulating washers.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path / heatsink interface	Electrically connected to exposed copper tab; must be isolated from chassis unless referenced to system ground
Source	Power return node / reference for gate drive	Low-inductance source connection critical for minimizing dI/dt-induced V_GS ringing during switching
Gate	Control input for channel conduction	Logic-level compatible; requires <100 nA leakage current handling and <35 nC charge for full enhancement

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK package	Eliminates need for mica insulators or silicone pads - reduces assembly steps and thermal interface resistance by ~30%
2.5 kVRMS isolation (60 s)	Meets reinforced insulation requirements per IEC 60950-1 and UL 60950-1 for secondary-side switching in AC/DC adapters
R_DS(on) specified at V_GS = 4 V	Guarantees ≤0.070 Ω on-resistance even with marginal gate drive, improving system margin in noisy environments
Fast body diode recovery (t_rr ≤ 180 ns)	Reduces switching losses and EMI in flyback and LLC resonant converters operating above 100 kHz
High dV/dt immunity (4.5 V/ns)	Withstands steep voltage transients in motor phase-legs and inverter half-bridges without false turn-on

Applications

Industrial Motor Drives	AC/DC Power Supplies
Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor controllers for HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side N-channel MOSFET providing isolated gate drive and current commutation. Use Value: 2.5 kVRMS isolation eliminates optocoupler-based gate drivers; 0.050 Ω R_DS(on) reduces conduction loss by 40% vs. legacy 0.085 Ω devices.	Use Scenario: Primary-side active clamp switch in 60 W telecom adapter with 300 VAC input. IC Role / Device Role / Timing Role: Clamp FET absorbing transformer leakage energy during reset phase. Use Value: 200 mJ E_AS rating ensures reliable clamp operation under line surge and load transient conditions.
DC-DC Converters	Industrial PLC Output Modules
Use Scenario: Synchronous rectifier in 12 V → 3.3 V buck converter for programmable logic controller (PLC) backplane. IC Role / Device Role / Timing Role: Low-V_GS(th) N-channel MOSFET replacing Schottky diode to improve efficiency at light loads. Use Value: V_GS(th) = 1.0–2.0 V enables full enhancement using 3.3 V controller GPIO, avoiding dedicated gate bias circuitry.	Use Scenario: Isolated solid-state relay replacement in 24 V digital output module driving solenoids and indicators. IC Role / Device Role / Timing Role: Galvanically isolated power switch interfacing microcontroller I/O to field-side loads. Use Value: 4.8 mm creepage and 2.5 kVRMS isolation meet IEC 61000-4-5 surge immunity and functional safety separation requirements.

Industrial Motor Drives

AC/DC Power Supplies

Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor controllers for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET providing isolated gate drive and current commutation.

Use Value: 2.5 kVRMS isolation eliminates optocoupler-based gate drivers; 0.050 Ω R_DS(on) reduces conduction loss by 40% vs. legacy 0.085 Ω devices.

Use Scenario: Primary-side active clamp switch in 60 W telecom adapter with 300 VAC input.

IC Role / Device Role / Timing Role: Clamp FET absorbing transformer leakage energy during reset phase.

Use Value: 200 mJ E_AS rating ensures reliable clamp operation under line surge and load transient conditions.

DC-DC Converters

Industrial PLC Output Modules

Use Scenario: Synchronous rectifier in 12 V → 3.3 V buck converter for programmable logic controller (PLC) backplane.

IC Role / Device Role / Timing Role: Low-V_GS(th) N-channel MOSFET replacing Schottky diode to improve efficiency at light loads.

Use Value: V_GS(th) = 1.0–2.0 V enables full enhancement using 3.3 V controller GPIO, avoiding dedicated gate bias circuitry.

Use Scenario: Isolated solid-state relay replacement in 24 V digital output module driving solenoids and indicators.

IC Role / Device Role / Timing Role: Galvanically isolated power switch interfacing microcontroller I/O to field-side loads.

Use Value: 4.8 mm creepage and 2.5 kVRMS isolation meet IEC 61000-4-5 surge immunity and functional safety separation requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel isolated MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06L	R_DS(on) = 0.018 Ω @ 10 V (not logic-level); no isolation rating; TO-220 non-isolated	Requires gate driver with ≥10 V output; unsuitable where reinforced insulation is mandated	Choose only when isolation is unnecessary and lower R_DS(on) justifies added gate drive complexity
IXTP50N075L2	R_DS(on) = 0.0075 Ω @ 10 V; 75 V rating; no isolation; TO-220 non-isolated	Lacks 2.5 kVRMS isolation and creepage compliance; higher voltage headroom but no safety barrier	Select if higher V_DS margin is needed and isolation is handled externally via PCB layout or discrete barriers

Compared with STP60NF06L and IXTP50N075L2, the IRLIZ34G uniquely delivers integrated galvanic isolation in a standard TO-220 footprint - reducing BOM count and board area while meeting safety standards that alternatives cannot satisfy without system-level redesign.

Availability

IRLIZ34G is available at Aetrix Electronics and suitable for industrial motor drives, AC/DC power supplies, and DC-DC converters requiring stable component supply, long-term lifecycle support, and certified isolation performance.

Supply support for IRLIZ34G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The IRLIZ34G belongs to Vishay's isolated power MOSFET product line, engineered specifically for commercial-industrial systems needing integrated high-voltage isolation without external insulation hardware.

FAQ

What is the maximum continuous drain current for the IRLIZ34G at 100 °C case temperature?

The IRLIZ34G supports 14 A continuous drain current at T_C = 100 °C, derated linearly from 20 A at 25 °C using a 0.28 W/°C factor. This rating assumes proper heatsinking via the isolated tab and accounts for junction temperature limits up to 175 °C. The IRLIZ34G datasheet confirms this value in the Absolute Maximum Ratings table under "Continuous drain current".

Does the IRLIZ34G require external isolation hardware when mounted to a metal heatsink?

No - the IRLIZ34G does not require external isolation hardware when mounted to a metal heatsink because its TO-220 FULLPAK package provides 2.5 kVRMS isolation and 4.8 mm creepage distance between the drain tab and leads. The molding compound replaces traditional mica or silicone insulators, and the IRLIZ34G is qualified for direct heatsink mounting using a single M3 screw or clip per Vishay's mechanical recommendations.

What is the typical gate charge profile of the IRLIZ34G, and how does it affect driver selection?

The IRLIZ34G has total gate charge Q_g = 35 nC (max), with Q_gs = 7.1 nC and Q_gd = 25 nC. This distribution indicates Miller plateau dominance, requiring gate drivers capable of delivering ≥1 A peak current to achieve nanosecond-scale switching. The IRLIZ34G's Q_g value is confirmed in the "SPECIFICATIONS" table under dynamic parameters with test conditions V_GS = 5.0 V, I_D = 30 A, V_DS = 48 V.

Can the IRLIZ34G be used in avalanche-rated circuits, and what is its single-pulse energy limit?

Yes - the IRLIZ34G is rated for single-pulse avalanche energy E_AS = 200 mJ under defined test conditions (V_DD = 25 V, L = 583 μH, R_G = 25 Ω, I_AS = 20 A). This rating is validated per JEDEC JESD24-1 and applies to unclamped inductive switching events. The IRLIZ34G's E_AS value is explicitly listed in the Absolute Maximum Ratings table and supported by Fig. 12c in the datasheet.

How does the body diode performance of the IRLIZ34G compare to standard FRDs in flyback applications?

The IRLIZ34G body diode exhibits t_rr = 90–180 ns and Q_rr = 0.65–1.3 μC at T_J = 25 °C, which is slower and higher-charge than purpose-built fast recovery diodes (FRDs), but sufficient for flyback operation below 200 kHz. Its V_SD = 1.6 V at I_S = 20 A enables lower forward loss than Schottkys in high-current scenarios. These values are measured per the "Drain-Source Body Diode Characteristics" section of the IRLIZ34G datasheet.

IRLIZ34G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 12A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRLIZ34G FAQ

1.How can I place an order for IRLIZ34G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLIZ34G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLIZ34G reliable?

The price and inventory of IRLIZ34G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLIZ34G is usually 5 days.

3.What payment methods are accepted for IRLIZ34G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLIZ34G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLIZ34G?

IRLIZ34G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLIZ34G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLIZ34G?

For technical support, including IRLIZ34G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLIZ34G requirements.

6.How does Aetrix verify that IRLIZ34G is sourced from the original manufacturer or authorized distributors?

All IRLIZ34G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLIZ34G meets industry standards.

7.What is the process for return or replacement of IRLIZ34G?

All IRLIZ34G units undergo pre-shipment inspection (PSI). If there is an issue with IRLIZ34G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLIZ34G part is unused and in its original packaging.

Return procedure for IRLIZ34G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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