Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLIZ34GPBF

Name: IRLIZ34GPBF
Brand: Vishay Siliconix
SKU: IRLIZ34GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLIZ34GPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRLIZ34GPBF.pdf

Description:: MOSFET N-CH 60V 20A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:877

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLIZ34GPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220 FULLPAK package, rated for 60 V V_DS, 20 A continuous drain current at T_C = 25 °C, and 0.050 Ω R_DS(on) at V_GS = 5.0 V. It delivers high-voltage isolation (2.5 kV_RMS, 60 s), fast switching (t_r = 170 ns), and is optimized for DC-DC converters, motor drives, and industrial power switches requiring robust avalanche capability (E_AS = 200 mJ).

For engineers reviewing the IRLIZ34GPBF datasheet, IRLIZ34GPBF pinout, IRLIZ34GPBF application, or IRLIZ34GPBF equivalent, this device is selected for high-reliability isolated-switching roles where low gate drive voltage (4–5 V), thermal efficiency (R_thJC = 3.6 °C/W), and body diode recovery performance (t_rr = 90–180 ns) are critical design constraints.

Technical Context

This third-generation power MOSFET uses planar V-groove silicon technology to achieve low R_DS(on) while maintaining rugged unclamped inductive switching (UIS) performance. Its isolated TO-220 FULLPAK construction eliminates external insulation hardware by integrating 4.8 mm sink-to-lead creepage and 2.5 kV_RMS isolation - equivalent to a 100 µm mica barrier in standard TO-220.

The device features a fast intrinsic body diode with Q_rr = 0.65–1.3 µC and dV/dt rating of 4.5 V/ns, enabling reliable operation in hard-switched topologies. Gate charge parameters (Q_g = 35 nC, Q_gd = 25 nC) support efficient driving with standard logic-level controllers without requiring gate boosters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V bus systems and automotive 36 V transients.
R_DS(on) @ V_GS = 5 V	0.050 Ω - Enables <1 W conduction loss at 10 A, reducing heatsink requirements in compact power stages.
Q_g	35 nC - Low total gate charge allows fast turn-on with moderate gate driver current (e.g., 1 A peak yields ~35 ns rise time).
E_AS	200 mJ - Rated single-pulse avalanche energy supports reliable operation during inductive load switching faults.
R_thJC	3.6 °C/W - High thermal conductivity from junction to case enables >40 W power dissipation with modest heatsinking.
t_rr	90–180 ns - Body diode reverse recovery time validated at I_F = 30 A, dI/dt = 100 A/µs, critical for synchronous rectifier timing.
V_GS(th)	1.0–2.0 V - Logic-level threshold ensures full enhancement with 3.3 V or 5 V microcontroller GPIO outputs.

Pinout & Package

IRLIZ34GPBF is housed in a TO-220 FULLPAK package with isolated tab (drain-connected), offering 2.5 kV_RMS isolation and 4.8 mm creepage between sink and leads. The package mounts directly to heatsinks via single screw or clip, eliminating insulating washers.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current output node / heat transfer surface	Electrically isolated metal tab serves as both drain terminal and primary thermal path; requires no insulator when mounted to grounded heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance source lead (L_S = 7.5 nH) minimizes switching ringing and improves current-sense accuracy in high-side configurations.
Gate	Control input for channel conduction	Logic-compatible input (V_GS(th) ≤ 2.0 V) with ±100 nA leakage; Q_gs/Q_gd ratio (7.1/25 nC) supports predictable Miller plateau timing.

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	2.5 kV_RMS isolation (60 s) and 4.8 mm creepage eliminate need for mica washers or isolation pads in commercial/industrial SMPS designs.
Logic-level gate drive	V_GS(th) = 1.0–2.0 V and R_DS(on) specified at V_GS = 4 V/5 V enable direct interface with 3.3 V/5 V MCUs and gate drivers without level-shifting.
Fast switching with low Q_gd	Q_gd = 25 nC (71% of Q_g) reduces Miller-induced turn-off delay, supporting >100 kHz PWM in hard-switched converters.
Ruggedized UIS capability	200 mJ single-pulse avalanche energy (tested per JEDEC JESD24-1) ensures survivability during load dump or inductive kick events.
Optimized body diode	t_rr = 90–180 ns and Q_rr = 0.65–1.3 µC minimize commutation losses and EMI in freewheeling paths of motor drives and DC-DC stages.

Applications

Industrial Motor Drives	48 V DC-DC Converters
Use Scenario: Half-bridge gate driver stage in 24–48 V BLDC motor controllers for HVAC blowers and industrial pumps. IC Role / Device Role / Timing Role: Low-side switch with fast body diode recovery enabling synchronous rectification and reduced shoot-through risk. Use Value: 0.050 Ω R_DS(on) limits conduction loss to <0.5 W at 10 A, while t_rr < 180 ns prevents cross-conduction during dead-time transitions.	Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V flyback or forward converter for telecom power supplies. IC Role / Device Role / Timing Role: High-efficiency secondary-side switch replacing Schottky diodes, driven by transformer-coupled gate signal. Use Value: 2.5 kV_RMS isolation and 60 V rating allow safe operation across reinforced insulation barriers without additional isolation components.
Automotive Body Control Modules	Industrial PLC Output Stages
Use Scenario: Load switch for 12 V/24 V solenoid, relay, and LED lighting control in BCMs with load-dump protection. IC Role / Device Role / Timing Role: Protected high-side or low-side power switch with integrated avalanche ruggedness for transient suppression. Use Value: E_AS = 200 mJ withstands ISO 7637-2 Pulse 5a (load dump) up to 60 V without external TVS, simplifying BOM.	Use Scenario: Solid-state output driver in programmable logic controller (PLC) digital output modules switching 24 V DC inductive loads. IC Role / Device Role / Timing Role: Isolated power switch interfacing field-side loads to controller logic with galvanic separation. Use Value: TO-220 FULLPAK's 4.8 mm creepage meets IEC 61000-4-5 surge immunity requirements for industrial environments without PCB spacing penalties.

Industrial Motor Drives

48 V DC-DC Converters

Use Scenario: Half-bridge gate driver stage in 24–48 V BLDC motor controllers for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Low-side switch with fast body diode recovery enabling synchronous rectification and reduced shoot-through risk.

Use Value: 0.050 Ω R_DS(on) limits conduction loss to <0.5 W at 10 A, while t_rr < 180 ns prevents cross-conduction during dead-time transitions.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V flyback or forward converter for telecom power supplies.

IC Role / Device Role / Timing Role: High-efficiency secondary-side switch replacing Schottky diodes, driven by transformer-coupled gate signal.

Use Value: 2.5 kV_RMS isolation and 60 V rating allow safe operation across reinforced insulation barriers without additional isolation components.

Automotive Body Control Modules

Industrial PLC Output Stages

Use Scenario: Load switch for 12 V/24 V solenoid, relay, and LED lighting control in BCMs with load-dump protection.

IC Role / Device Role / Timing Role: Protected high-side or low-side power switch with integrated avalanche ruggedness for transient suppression.

Use Value: E_AS = 200 mJ withstands ISO 7637-2 Pulse 5a (load dump) up to 60 V without external TVS, simplifying BOM.

Use Scenario: Solid-state output driver in programmable logic controller (PLC) digital output modules switching 24 V DC inductive loads.

IC Role / Device Role / Timing Role: Isolated power switch interfacing field-side loads to controller logic with galvanic separation.

Use Value: TO-220 FULLPAK's 4.8 mm creepage meets IEC 61000-4-5 surge immunity requirements for industrial environments without PCB spacing penalties.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 0.028 Ω @ V_GS = 10 V but V_GS(th) = 2–4 V; no isolation rating; TO-220 non-FULLPAK.	Requires 10 V gate drive for optimal R_DS(on); unsuitable where 2.5 kV isolation or logic-level drive is mandatory.	Select IRLIZ34GPBF when isolation, 5 V drive, or creepage compliance are required; IRFZ44NPBF only where lowest R_DS(on) at 10 V is priority.
STP60NF06L	R_DS(on) = 0.018 Ω @ V_GS = 10 V; V_GS(th) = 1–2.5 V; no isolation; TO-220AB package.	Lacks 2.5 kV_RMS isolation and creepage distance; higher Q_g (65 nC) increases gate drive demand.	Choose IRLIZ34GPBF for isolated industrial switching; STP60NF06L fits cost-sensitive, non-isolated 60 V applications needing lower R_DS(on).

Compared with IRFZ44NPBF and STP60NF06L, the IRLIZ34GPBF uniquely combines logic-level drive, certified high-voltage isolation, and industry-standard creepage - making it irreplaceable in safety-critical or space-constrained isolated power stages where external insulation would otherwise increase cost and footprint.

Availability

IRLIZ34GPBF is available at Aetrix Electronics and suitable for industrial motor drives, 48 V DC-DC converters, and automotive body control modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRLIZ34GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRLIZ34GPBF belongs to Vishay's logic-level isolated power MOSFET family, engineered specifically for industrial and automotive power switching where galvanic isolation, low gate drive voltage, and rugged UIS performance are essential.

FAQ

What is the maximum continuous drain current for IRLIZ34GPBF at 100 °C case temperature?

The IRLIZ34GPBF supports 14 A continuous drain current at T_C = 100 °C, derated linearly from 20 A at 25 °C using a 0.28 W/°C factor. This rating is validated under steady-state thermal conditions with proper heatsinking and accounts for R_DS(on) increase with temperature per Fig. 4 in the datasheet.

Does IRLIZ34GPBF require external isolation hardware when mounted to a heatsink?

No - the IRLIZ34GPBF's TO-220 FULLPAK package provides 2.5 kV_RMS isolation and 4.8 mm creepage distance between the drain tab and leads, eliminating the need for mica washers or isolation pads in compliant designs. Mounting is done directly via screw or clip to the heatsink.

What is the body diode reverse recovery charge (Q_rr) of IRLIZ34GPBF?

The IRLIZ34GPBF has a body diode reverse recovery charge of 0.65–1.3 µC, measured at T_J = 25 °C, I_F = 30 A, and dI/dt = 100 A/µs. This value is critical for estimating commutation losses in synchronous rectifier and half-bridge applications.

Can IRLIZ34GPBF be used in avalanche mode repeatedly?

The IRLIZ34GPBF is rated for single-pulse avalanche energy (E_AS) of 200 mJ, not repetitive avalanche. Repetitive operation in avalanche is not characterized or guaranteed; designers must ensure operating conditions stay within SOA limits shown in Fig. 8 to avoid cumulative junction damage.

What is the gate-source leakage current specification for IRLIZ34GPBF?

The IRLIZ34GPBF specifies gate-source leakage current (I_GSS) of ±100 nA maximum at V_GS = ±10 V and T_J = 25 °C. This low leakage supports stable gate biasing in high-impedance drive circuits and reduces static power consumption in always-on control stages.

IRLIZ34GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 12A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRLIZ34GPBF FAQ

1.How can I place an order for IRLIZ34GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLIZ34GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLIZ34GPBF reliable?

The price and inventory of IRLIZ34GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLIZ34GPBF is usually 5 days.

3.What payment methods are accepted for IRLIZ34GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLIZ34GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLIZ34GPBF?

IRLIZ34GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLIZ34GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLIZ34GPBF?

For technical support, including IRLIZ34GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLIZ34GPBF requirements.

6.How does Aetrix verify that IRLIZ34GPBF is sourced from the original manufacturer or authorized distributors?

All IRLIZ34GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLIZ34GPBF meets industry standards.

7.What is the process for return or replacement of IRLIZ34GPBF?

All IRLIZ34GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLIZ34GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLIZ34GPBF part is unused and in its original packaging.

Return procedure for IRLIZ34GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …