Vishay Siliconix IRLL110

Overview

IRLL110 from Vishay Siliconix is a 100 V, 1.5 A N-channel logic-level power MOSFET in SOT-223 package, with R_DS(on) = 0.54 Ω at V_GS = 5 V, Q_g = 6.1 nC, and repetitive avalanche rated to 0.31 mJ - designed for low-voltage DC-DC converter high-side switching, LED driver control, and load switching in space-constrained industrial modules.

For engineers reviewing the IRLL110 datasheet, IRLL110 pinout, IRLL110 application, or IRLL110 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), thermal performance on PCB mount (R_thJA = 60 °C/W), and fast switching (t_r = 47 ns, t_f = 18 ns) in surface-mount power management circuits.

Technical Context

The IRLL110 employs a third-generation trench MOSFET process optimized for low R_DS(on) and robust unclamped inductive switching. Its gate threshold voltage range (1.0–2.0 V) ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs without level-shifting.

It integrates a co-packaged body diode with t_rr = 110–130 ns and Q_rr = 0.50–0.65 μC, enabling moderate-frequency synchronous rectification or freewheeling in buck converters up to ~500 kHz, while its dV/dt rating of 5.5 V/ns supports noise-immune operation in noisy industrial environments.

Key Specifications

Pinout & Package

SOT-223 package with exposed drain tab for thermal conduction; 3-pin configuration (G, D, S) plus integrated heatsink pad connected to drain terminal. Standard JEDEC TO-261AA outline; 6.3–6.7 mm × 3.3–3.7 mm footprint; 1.55–1.80 mm height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2004LKQ-7 and SI2302DS-T1-BE3, the IRLL110 uniquely balances 100 V rating, logic-level drive, and repetitive avalanche capability in a thermally capable SOT-223 package - making it the only option among the three qualified for 24–48 V industrial load switching with reliability under transient stress.

Availability

IRLL110 is available at Aetrix Electronics and suitable for industrial load switching, LED driver control, and battery-powered sensor node power gating requiring stable component supply and long-term manufacturability.

Supply support for IRLL110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLL110 belongs to Vishay's logic-level SOT-223 power MOSFET family, engineered for space-constrained, thermally demanding applications where gate drive simplicity and ruggedness outweigh ultra-low R_DS(on).

FAQ

What is the maximum continuous drain current for the IRLL110 at 100 °C case temperature?

The IRLL110 supports 0.93 A continuous drain current at T_C = 100 °C, per its linear derating factor of 0.025 W/°C from the 3.1 W maximum power dissipation at 25 °C. This value is validated under PCB-mount conditions using a 1" square FR-4 board, and must be applied when ambient temperature or layout constraints limit heatsinking. The IRLL110 maintains safe operation within its SOA curve up to this current level.

Does the IRLL110 have a specified body diode reverse recovery time?

Yes, the IRLL110 specifies body diode reverse recovery time (t_rr) as 110–130 ns at T_J = 25 °C, I_F = 5.6 A, and dI/dt = 100 A/μs. This parameter is measured with the gate shorted to source and is critical for estimating switching losses in non-synchronous buck converters. The IRLL110's Q_rr of 0.50–0.65 μC further defines stored charge behavior during commutation.

Is the IRLL110 compatible with 3.3 V microcontroller GPIOs for direct gate drive?

Yes, the IRLL110 is explicitly designed for logic-level gate drive: its V_GS(th) range is 1.0–2.0 V, and R_DS(on) is fully characterized at V_GS = 4 V and 5 V. A 3.3 V GPIO can fully enhance the device, delivering ≤0.76 Ω R_DS(on) at 0.75 A drain current. No external level shifter is needed, making the IRLL110 ideal for direct MCU interface in compact embedded systems.

What is the thermal resistance from junction to ambient for the IRLL110 in standard PCB mounting?

The IRLL110 has a maximum junction-to-ambient thermal resistance (R_thJA) of 60 °C/W when mounted on a 1" square FR-4 or G-10 PCB - a condition explicitly defined in its absolute maximum ratings table. This value assumes standard soldering and no added heatsink; the exposed drain tab provides the primary thermal path. For higher-power operation, thermal vias under the tab reduce effective R_thJA significantly.

Can the IRLL110 be used in avalanche mode for inductive load switching?

Yes, the IRLL110 is repetitively avalanche rated with E_AR = 0.31 mJ and I_AR = 1.5 A, and is tested per JEDEC standards for unclamped inductive switching. It is qualified for repeated avalanche events in applications like solenoid or relay driving, provided pulse width and duty cycle remain within limits defined in Figure 11 (pulse width ≤ 300 μs, duty cycle ≤ 2 %). The IRLL110's ruggedized die design sustains these stresses without degradation.