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Vishay Siliconix IRLL110TR
- Part No.:
- IRLL110TR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
IRLL110TR.pdf
- Description:
- MOSFET N-CH 100V 1.5A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:3,244
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Product details
Overview
IRLL110TR from Vishay Siliconix is a logic-level N-channel enhancement-mode power MOSFET in SOT-223 package, rated for 100 V VDS, 1.5 A continuous drain current at TC = 25 °C, and 0.54 Ω RDS(on) at VGS = 5 V. It supports fast switching, repetitive avalanche operation, and is optimized for low-voltage gate drive in compact DC-DC converters and load-switching applications.
For engineers reviewing the IRLL110TR datasheet, IRLL110TR pinout, IRLL110TR application, or IRLL110TR equivalent, key selection criteria include its logic-level gate threshold (1.0–2.0 V), 5.5 V/ns peak diode recovery dV/dt rating, 6.1 nC total gate charge, and thermal performance on PCB mount (RthJA = 60 °C/W).
Technical Context
This MOSFET employs third-generation trench-gate silicon technology to achieve low RDS(on) with robust avalanche capability (EAS = 50 mJ) and dynamic dV/dt immunity. Its gate threshold voltage (1.0–2.0 V) ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs without level-shifting.
The device integrates a body diode with 110–130 ns reverse recovery time and 0.50–0.65 μC Qrr, enabling use in synchronous rectification and flyback snubber circuits. Thermal design leverages the SOT-223's exposed drain tab for >1.25 W power dissipation on standard FR-4 PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports input rails up to 80 V DC with margin for transients in industrial power supplies. |
| RDS(on) @ VGS = 5 V | 0.54 Ω - Enables <1.2 W conduction loss at 1.5 A, suitable for space-constrained 5 V logic-driven switches. |
| Qg | 6.1 nC - Low gate charge allows fast switching with minimal driver strength (e.g., GPIO or small buffer ICs). |
| ID (continuous, TC = 25 °C) | 1.5 A - Rated for sustained load switching in battery-powered equipment and point-of-load regulators. |
| EAS | 50 mJ - Withstands unclamped inductive energy in relay drivers and motor commutation without external clamping. |
| dV/dt (peak diode recovery) | 5.5 V/ns - Resists false triggering during fast voltage transitions in high-noise environments like motor drives. |
| TJ range | –55 to +150 °C - Qualified for extended temperature operation in automotive under-hood and industrial control modules. |
Pinout & Package
SOT-223 package with exposed drain tab for thermal conduction; 3-pin surface-mount outline conforming to JEDEC TO-261AA. Mounting uses vapor phase, infrared, or wave soldering; 1" square FR-4 PCB enables 2.0 W power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Logic-level control input; threshold 1.0–2.0 V enables direct drive from 3.3 V/5 V MCUs without level shifters. |
| 2 (D) | Drain | Main power output terminal; electrically connected to exposed copper tab for heatsinking and current return path. |
| 3 (S) | Source | Reference node for gate drive and current sensing; tied to system ground or low-side shunt in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.0 V (RDS(on) = 0.76 Ω), eliminating need for gate boosters in 3.3 V systems. |
| Repetitive avalanche rated | Rated for 0.31 mJ per pulse (IAR = 1.5 A), supporting robustness in inductive load switching without snubbers. |
| Fast switching | Turn-on delay 9.3 ns, rise time 47 ns, fall time 18 ns - minimizes switching losses in PWM frequencies up to 500 kHz. |
| Dynamic dV/dt immunity | 5.5 V/ns peak diode recovery dV/dt - prevents spurious turn-on during high-slew-rate transients in motor control. |
| SOT-223 thermal performance | 60 °C/W junction-to-ambient (PCB mount) - delivers >1.25 W dissipation on standard 1" FR-4, reducing need for heatsinks. |
Applications
| DC-DC Converter High-Side Switch | USB Power Delivery Load Switch |
|---|---|
|
Use Scenario: High-side switch in non-isolated buck converter output stage, controlling 5–12 V rail delivery to downstream peripherals. IC Role / Device Role: Power MOSFET providing controlled connection between input supply and regulated output bus. Use Value: 0.54 Ω RDS(on) limits conduction loss to <1.2 W at 1.5 A; logic-level gate enables direct MCU enable control without auxiliary drivers. |
Use Scenario: Load switch managing power sequencing and overcurrent protection for USB-C PD ports in portable docking stations. IC Role / Device Role: Low-side or high-side power switch enabling/disabling VBUS under firmware control. Use Value: 1.5 A continuous rating and 12 A pulsed capability support hot-plug events; fast 18 ns fall time ensures clean power ramp-down. |
| Automotive LED Headlight Dimming | Industrial Solenoid Driver |
|
Use Scenario: PWM-controlled dimming of 12 V automotive LED arrays using constant-current regulation via external sense resistor. IC Role / Device Role: Low-loss switching element in high-side current sink configuration. Use Value: –55 to +150 °C operating range meets AEC-Q101 ambient requirements; 50 mJ EAS absorbs inductive kickback from LED string parasitics. |
Use Scenario: Driving 24 V DC solenoids in factory automation valves, requiring robust transient suppression and fast de-energization. IC Role / Device Role: High-side switch interfacing PLC outputs to inductive loads. Use Value: Repetitive avalanche rating eliminates need for external flyback diodes; 5.5 V/ns dV/dt immunity prevents false triggering during solenoid turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHLL110TR-GE3 | Same die, alternate manufacturing location; identical RDS(on), Qg, and avalanche ratings; Pb-free/halogen-free compliance. | No functional difference; qualified for same automotive and industrial applications per Vishay documentation. | Select when RoHS/REACH compliance is mandatory and sourcing flexibility across Vishay production sites is required. |
| IRLML6344TRPBF | Lower VDS (60 V), lower RDS(on) (0.045 Ω @ 4.5 V), smaller SOT-23 package; not avalanche-rated. | Better for 5 V/3.3 V logic loads below 60 V; unsuitable for 100 V bus or inductive energy absorption. | Choose only for low-voltage, high-efficiency switching where avalanche ruggedness and 100 V rating are unnecessary. |
Compared with IRLL110TR, SiHLL110TR-GE3 offers identical electrical and thermal performance with enhanced environmental compliance, while IRLML6344TRPBF trades voltage headroom and ruggedness for lower on-resistance and smaller footprint in sub-60 V designs.
Availability
IRLL110TR is available at Aetrix Electronics and suitable for DC-DC converters, USB power delivery load switching, and automotive LED dimming requiring stable component supply across production lifecycles.
Supply support for IRLL110TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and thermal performance.
The IRLL110TR belongs to Vishay's logic-level power MOSFET product line, engineered for direct microcontroller interface in space-constrained, thermally demanding applications such as portable power management and industrial controls.
FAQ
What is the maximum continuous drain current for IRLL110TR at 100 °C case temperature?
The IRLL110TR supports 0.93 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.025 W/°C and 3.1 W maximum power dissipation at 25 °C. This value reflects real-world thermal limits when mounted on a standard PCB, and must be validated against actual board layout and ambient conditions in the final design. The IRLL110TR datasheet specifies this rating explicitly in the Absolute Maximum Ratings table.
Does IRLL110TR require a gate resistor for safe operation?
The IRLL110TR does not mandate a gate resistor for basic turn-on/turn-off, but a 10–25 Ω series resistor is recommended to dampen ringing caused by gate loop inductance and prevent oscillation during fast switching. The datasheet references Rg = 25 Ω in avalanche testing and switching time characterization, confirming its role in controlling dI/dt and ensuring stable gate drive. Using the IRLL110TR without proper gate resistance may lead to electromagnetic interference or localized gate oxide stress.
Can IRLL110TR be used in avalanche mode repeatedly?
Yes, the IRLL110TR is explicitly rated for repetitive avalanche operation with EAR = 0.31 mJ per pulse and IAR = 1.5 A, provided pulse width and duty cycle remain within limits defined in Figure 11 of the datasheet. This capability allows the IRLL110TR to absorb inductive energy in relay drivers or solenoid controls without external clamping components, distinguishing it from non-avalanche-rated MOSFETs. Always verify thermal limits under repetitive stress conditions.
What is the body diode forward voltage of IRLL110TR at 1.5 A?
The IRLL110TR body diode exhibits a forward voltage of 2.5 V maximum at TJ = 25 °C and IS = 1.5 A with VGS = 0 V, as specified in the Drain-Source Body Diode Characteristics table. This relatively high VSD reflects the trade-off for high-voltage blocking capability and is typical for 100 V logic-level MOSFETs. Designers should account for this drop in freewheeling paths or consider synchronous rectification when efficiency is critical. The IRLL110TR datasheet confirms this value under standardized test conditions.
Is IRLL110TR compatible with lead-free reflow soldering processes?
Yes, the IRLL110TR is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings table. Its SOT-223 package meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements, and the "PbF" suffix in IRLL110TRPbF-BE3 confirms lead-free construction. Proper pre-bake and profile adherence per Vishay's S21-0322 document are required to avoid package damage. The IRLL110TR specification sheet explicitly lists this soldering recommendation.
IRLL110TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 900mA, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.1 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 250 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 3.1W (Tc)
- Operating Temperature:
- -55°C ~ 155°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
IRLL110TR FAQ
1.How can I place an order for IRLL110TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLL110TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLL110TR reliable?
The price and inventory of IRLL110TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLL110TR is usually 5 days.
3.What payment methods are accepted for IRLL110TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLL110TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLL110TR?
IRLL110TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLL110TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLL110TR?
For technical support, including IRLL110TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLL110TR requirements.
6.How does Aetrix verify that IRLL110TR is sourced from the original manufacturer or authorized distributors?
All IRLL110TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLL110TR meets industry standards.
7.What is the process for return or replacement of IRLL110TR?
All IRLL110TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLL110TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLL110TR part is unused and in its original packaging.
Return procedure for IRLL110TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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