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Infineon Technologies IRLP3034PBF

Part No.:
IRLP3034PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixIRLP3034PBF.pdf
Description:
MOSFET N-CH 40V 195A TO247AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:444

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Product details

Overview

IRLP3034PBF from Infineon Technologies is a 40V, logic-level N-channel Power MOSFET in TO-247AC package, rated for 195A continuous drain current (package-limited) and 1.4mΩ typical RDS(on) at VGS = 10V. It delivers high-efficiency synchronous rectification in SMPS, hard-switched DC motor drives, and UPS systems where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the IRLP3034PBF datasheet, IRLP3034PBF pinout, IRLP3034PBF application, or IRLP3034PBF equivalent, key selection criteria include its 1.6mΩ RDS(on) at 4.5V gate drive, 108nC total gate charge, 39ns reverse recovery time, and validated unclamped inductive switching performance up to 1308A pulsed drain current.

Technical Context

This HEXFET® device uses planar stripe silicon technology optimized for low RDS(on) × Qg product at 4.5V drive, enabling efficient operation with standard logic-level controllers. Its body diode exhibits 1.3V forward voltage at 195A and 39ns trr at 25°C, supporting fast-recovery synchronous rectification.

The MOSFET features fully characterized avalanche SOA with 224mJ single-pulse EAS, 4.6V/ns peak diode recovery dv/dt rating, and thermal resistance RθJC = 0.44°C/W - enabling high-power density designs in forced-air or heatsink-mounted configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS40V - Maximum blocking voltage for 12–24V bus applications including automotive and industrial SMPS.
RDS(on) typ. @ 10V1.4mΩ - Enables ≤2.8W conduction loss at 195A, critical for high-current synchronous rectifiers.
RDS(on) max. @ 4.5V2.0mΩ - Confirmed low on-resistance under logic-level gate drive, reducing driver complexity.
Qg typ.108nC - Defines gate drive energy requirement; supports 100kHz+ switching with moderate gate drivers.
trr39ns - Fast body diode recovery minimizes shoot-through risk and commutation loss in half-bridge topologies.
EAS224mJ - Thermally limited single-pulse avalanche energy enables robustness against inductive load transients.
RθJC0.44°C/W - Allows 341W power dissipation at ΔT = 150°C, supporting high-current operation with direct heatsink mounting.

Pinout & Package

IRLP3034PBF uses the through-hole TO-247AC package with isolated tab (drain-connected), optimized for high-current PCB mounting and heatsink interface. Not recommended for surface-mount use.

Pin/TerminalCircuit RoleDesign Meaning
GGateControl terminal accepting 0–20V VGS; 2.1Ω internal gate resistance limits ringing during fast switching.
DDrainMain high-side or low-side power path; electrically connected to metal tab for thermal and electrical conduction to heatsink.
SSourcePower return node; referenced for gate drive; carries full load current and body diode reverse recovery current.

Key Features

FeatureDesign Value
Logic-level gate drive compatibilityGuaranteed turn-on with 4.5V VGS, eliminating need for gate boosters in 5V/3.3V controller designs.
Enhanced body diode dV/dt and dI/dt capabilityRated for 4.6V/ns peak diode recovery dv/dt and >841A/µs di/dt, preventing false turn-on in hard-switched converters.
Fully characterized avalanche SOAValidated 224mJ single-pulse EAS and defined IAR-tav curves enable reliable unclamped inductive switching without derating.
Superior R×Q figure of merit at 4.5V1.6mΩ × 108nC = 173Ω·nC - benchmark efficiency metric for high-frequency, high-current switch-mode applications.
Lead-free constructionRoHS-compliant materials and termination, qualified per JEDEC J-STD-020 reflow profile for lead-free assembly.

Applications

DC Motor DriveHigh-Efficiency SMPS Synchronous Rectification

Use Scenario: 24V/150A brushed DC motor H-bridge with PWM control at 20kHz.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and regenerative braking via body diode conduction.

Use Value: 1.4mΩ RDS(on) reduces I²R losses by >40% vs. legacy 3.5mΩ MOSFETs, extending battery runtime and limiting heatsink size.

Use Scenario: Secondary-side synchronous rectifier in 48V-output telecom PSU operating at 300kHz.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven complementary to primary-side switch with precise timing control.

Use Value: 39ns trr and 1.3V VSD minimize reverse recovery loss and forward conduction loss, improving full-load efficiency by 1.2%.

Uninterruptible Power Supply (UPS)Hard-Switched High-Frequency Inverter

Use Scenario: 3kVA online UPS output stage using six-pack IGBT/MOSFET modules for sine-wave synthesis.

IC Role / Device Role / Timing Role: High-current, low-loss switching device in half-bridge leg; subjected to repetitive unclamped inductive stress during transfer events.

Use Value: 224mJ EAS and 1308A IDM support fault-tolerant operation during battery-to-bypass transitions without snubber circuits.

Use Scenario: 100kHz resonant LLC inverter driving induction heating coil with 120A peak current.

IC Role / Device Role / Timing Role: Primary-side high-side switch requiring fast turn-off and minimal Miller-induced shoot-through risk.

Use Value: 54nC Qgd and 935pF Crss suppress gate oscillation during high dV/dt transitions, ensuring clean commutation at 100V/ns slew rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFP4468PbFHigher RDS(on) (1.8mΩ @ 10V), higher Qg (132nC), same TO-247AC package.Lower switching efficiency at high frequency due to increased gate charge and conduction loss.Preferred when cost sensitivity outweighs 12% higher conduction loss and 22% higher drive power demand.
STH315N10F7-6100V rating, lower RDS(on) (0.95mΩ @ 10V), but higher Qg (165nC); TO-247-3L package with source-sense pin.Over-spec'd voltage rating adds unnecessary cost and capacitance for 40V systems; sense pin requires layout changes.Select only if future system voltage scaling to 60–80V is planned or if Kelvin-source layout is already implemented.

Compared with IRFP4468PbF and STH315N10F7-6, IRLP3034PBF offers optimal balance of 40V rating, sub-2mΩ on-resistance at logic-level drive, and industry-leading R×Q at 4.5V - making it the most efficient choice for 24–48V high-current SMPS and motor drive applications where thermal headroom is constrained.

Availability

IRLP3034PBF is available at Aetrix Electronics and suitable for DC motor drives, high-efficiency synchronous rectification in SMPS, and uninterruptible power supply systems requiring stable component supply across production lifecycles.

Supply support for IRLP3034PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRLP3034PBF belongs to Infineon's HEXFET® logic-level Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in 12–48V systems where gate drive simplicity and thermal performance are critical.

FAQ

Is IRLP3034PBF suitable for surface-mount assembly?

No. The TO-247AC package is explicitly not recommended for surface-mount applications per Infineon's datasheet (Rev. 2.1, p.8). It requires through-hole mounting with mechanical screw attachment to a heatsink for thermal and electrical integrity. Reflow soldering is not supported.

What is the maximum continuous drain current at 100°C case temperature?

At TC = 100°C and VGS = 10V, the silicon-limited continuous drain current is 232A. However, the package-limited rating remains 195A regardless of temperature, as bond wire current capacity does not improve with cooling.

Does IRLP3034PBF have avalanche-rated operation?

Yes. It is fully characterized for unclamped inductive switching with 224mJ single-pulse avalanche energy (EAS) at TJ = 25°C. Repetitive avalanche is permitted only if junction temperature remains below 175°C and average power dissipation stays within thermal limits defined by ZthJC.

How does the body diode performance compare to discrete Schottky rectifiers?

The body diode has VSD = 1.3V at 195A and trr = 39ns - significantly faster than standard PN diodes but higher forward drop than 45V Schottky rectifiers (~0.55V). It is optimized for synchronous rectification where gate-controlled conduction dominates; standalone diode use is not recommended.

IRLP3034PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 195A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
162 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
10315 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
341W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC

IRLP3034PBF FAQ

1.How can I place an order for IRLP3034PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLP3034PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLP3034PBF reliable?

The price and inventory of IRLP3034PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLP3034PBF is usually 5 days.

3.What payment methods are accepted for IRLP3034PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLP3034PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLP3034PBF?

IRLP3034PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLP3034PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLP3034PBF?

For technical support, including IRLP3034PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLP3034PBF requirements.

6.How does Aetrix verify that IRLP3034PBF is sourced from the original manufacturer or authorized distributors?

All IRLP3034PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLP3034PBF meets industry standards.

7.What is the process for return or replacement of IRLP3034PBF?

All IRLP3034PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLP3034PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLP3034PBF part is unused and in its original packaging.

Return procedure for IRLP3034PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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