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Vishay Siliconix IRLR024PBF

Part No.:
IRLR024PBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRLR024PBF.pdf
Description:
MOSFET N-CH 60V 14A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:11,085

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Product details

Overview

IRLR024PBF from Vishay Siliconix is a logic-level N-channel power MOSFET in DPAK (TO-252) package, rated for 60 V VDS, 14 A continuous drain current at TC = 25 °C, and 0.10 Ω RDS(on) at VGS = 5 V. It delivers fast switching with 18 nC total gate charge and supports surface-mount applications requiring ruggedized, cost-effective power control in DC-DC converters and motor drives.

For engineers reviewing the IRLR024PBF datasheet, IRLR024PBF pinout, IRLR024PBF application, or IRLR024PBF equivalent, key selection considerations include its logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), avalanche energy rating (EAS = 53 mJ), thermal resistance (RthJC = 3.0 °C/W), and PCB-mount power dissipation (2.5 W).

Technical Context

This third-generation power MOSFET uses planar V-groove technology to achieve low on-resistance while maintaining high dV/dt immunity (4.5 V/ns peak diode recovery). Its dynamic parameters-including Qgd = 12 nC and Ciss = 870 pF-are optimized for hard-switched topologies requiring controlled turn-on/turn-off timing.

The device integrates an intrinsic body diode with trr = 130–260 ns and Qrr = 0.75–1.5 μC, enabling reliable freewheeling in synchronous rectification and unclamped inductive switching (IAS = 14 A, EAS = 53 mJ).

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage for 24–48 V bus applications
RDS(on) @ VGS = 5 V0.10 Ω - Enables <1.4 W conduction loss at 12 A DC load
Qg18 nC - Determines gate driver current requirement (~1.8 mA avg. for 100 kHz switching)
ID (continuous)14 A @ TC = 25 °C - Supports high-current loads with minimal heatsinking
RthJC3.0 °C/W - Allows direct thermal coupling to PCB copper pour or heatsink
EAS53 mJ - Withstands single-pulse inductive energy without failure in motor control
tr/tf110 ns / 41 ns - Enables efficient operation up to ~500 kHz in SMPS designs

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; surface-mount compatible using vapor-phase, infrared, or wave soldering per JEDEC standards.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)GateLogic-level input (1.0–2.0 V threshold); requires <100 nA leakage current handling
Pin 2 (D)DrainExposed thermal pad - electrically connected to drain; primary heat path to PCB
Pin 3 (S)SourceReference node for gate drive; connects to low-side return path and current sensing

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced with 4–5 V MCU GPIO or PWM controller output - no level-shifter needed
Ruggedized dV/dt rating4.5 V/ns - prevents false turn-on during high-speed switching in noisy industrial environments
Low Qgd/Qg ratio12/18 = 67% - improves Miller immunity and reduces switching losses in hard-switched converters
Integrated body diode14 A continuous forward current with 1.5 V VSD - supports bidirectional current in H-bridge and synchronous buck stages
Avalanche-rated53 mJ single-pulse energy - eliminates need for external snubbers in relay driving and solenoid control

Applications

DC-DC Buck ConverterBrushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V battery to 12 V for automotive accessory modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 200–300 kHz with 5 V gate drive.

Use Value: 0.10 Ω RDS(on) limits conduction loss to ≤1.4 W at 12 A, enabling compact thermally constrained layout.

Use Scenario: Half-bridge H-bridge for reversing 24 V brushed motors in industrial actuators.

IC Role / Device Role / Timing Role: High-current quadrant switch with integrated body diode for freewheeling during PWM off-time.

Use Value: 14 A continuous ID and 53 mJ EAS ensure robustness against back-EMF spikes during direction reversal.

LED Constant-Current DriverPower Supply OR-ing Circuit

Use Scenario: High-brightness LED string control in outdoor signage with 36 V input.

IC Role / Device Role / Timing Role: Low-side current-sense switch modulated via analog dimming or PWM.

Use Value: 1.0–2.0 V VGS(th) enables precise linear current regulation using op-amp feedback without gate driver overhead.

Use Scenario: Redundant 24 V power rail combining in telecom shelf systems.

IC Role / Device Role / Timing Role: Ideal diode replacement with ultra-low forward drop and fast reverse recovery.

Use Value: 1.5 V VSD and 130 ns trr minimize conduction loss and reverse recovery loss versus Schottky diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR2905PBF60 V VDS, 42 A ID, 0.035 Ω RDS(on) @ 5 V - higher current, lower RDS(on), larger dieHigher power density required; needs stronger gate drive (Qg = 51 nC)Choose when >20 A load current or <0.5 W conduction loss is mandatory; verify PCB thermal capacity.
SiHLR024TRL-GE3Identical electrical specs; lead-free/halogen-free construction; same DPAK package; RoHS-compliant platingNo functional difference - intended for environmentally regulated productionSelect for new designs requiring full RoHS/REACH compliance; pin-to-pin and thermal drop-in replacement.

Compared with IRLR024PBF, IRLR2905PBF offers 3× higher current and 3× lower RDS(on) but demands 2.8× more gate charge, while SiHLR024TRL-GE3 matches all electrical and thermal behavior with updated environmental compliance - making it the preferred upgrade path for legacy IRLR024PBF designs.

Availability

IRLR024PBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, LED drivers, and power OR-ing circuits requiring stable component supply across industrial and automotive-grade production programs.

Supply support for IRLR024PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRLR024PBF belongs to Vishay's third-generation logic-level power MOSFET family, engineered specifically for high-efficiency, surface-mount power conversion in space-constrained industrial and automotive systems.

FAQ

What is the maximum junction temperature rating for IRLR024PBF?

The IRLR024PBF has an operating junction and storage temperature range of –55 °C to +150 °C. This allows reliable operation in under-hood automotive environments and industrial enclosures with ambient temperatures up to 85 °C when properly heatsinked. The device's thermal resistance (RthJC = 3.0 °C/W) enables effective junction temperature control even at full 14 A continuous current.

Does IRLR024PBF require a gate resistor for typical 5 V microcontroller drive?

Yes - a gate resistor is recommended for IRLR024PBF to control dv/dt and prevent ringing. While the device is logic-level (VGS(th) = 1.0–2.0 V), its Qg = 18 nC and Qgd = 12 nC make it sensitive to parasitic oscillation. A 10–25 Ω series gate resistor balances switching speed and stability, especially when driven by low-impedance MCU outputs or dedicated gate drivers.

Can IRLR024PBF be used in avalanche mode repeatedly?

No - IRLR024PBF is rated for single-pulse avalanche energy only (EAS = 53 mJ). Repetitive avalanche operation is not characterized or guaranteed. For applications involving frequent inductive switching (e.g., relay coils or solenoids), external clamping (TVS or RCD snubber) is required to limit VDS stress below 60 V and avoid cumulative junction damage.

What is the body diode forward voltage of IRLR024PBF at 14 A?

The body diode forward voltage (VSD) of IRLR024PBF is specified as 1.5 V maximum at TJ = 25 °C and IS = 14 A with VGS = 0 V. This value increases with junction temperature - expect ~1.7 V at 100 °C - and must be accounted for in freewheeling loss calculations in half-bridge or synchronous rectifier configurations.

Is IRLR024PBF pin-compatible with IRLU024PbF?

No - IRLR024PBF uses DPAK (TO-252) surface-mount packaging with three leads (G-D-S), while IRLU024PbF uses IPAK (TO-251) through-hole packaging with straight leads and identical pinout orientation but different mechanical footprint and thermal mounting. PCB layout and assembly process are not interchangeable; redesign is required for substitution.

IRLR024PBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Rds On (Max) @ Id, Vgs:
100mOhm @ 8.4A, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
870 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRLR024PBF FAQ

1.How can I place an order for IRLR024PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR024PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR024PBF reliable?

The price and inventory of IRLR024PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR024PBF is usually 5 days.

3.What payment methods are accepted for IRLR024PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR024PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR024PBF?

IRLR024PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR024PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR024PBF?

For technical support, including IRLR024PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR024PBF requirements.

6.How does Aetrix verify that IRLR024PBF is sourced from the original manufacturer or authorized distributors?

All IRLR024PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR024PBF meets industry standards.

7.What is the process for return or replacement of IRLR024PBF?

All IRLR024PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR024PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR024PBF part is unused and in its original packaging.

Return procedure for IRLR024PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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