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Vishay Siliconix IRLR024TR
- Part No.:
- IRLR024TR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR024TR.pdf
- Description:
- MOSFET N-CH 60V 14A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,787
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Product details
Overview
IRLR024TR from Vishay Siliconix is a logic-level N-channel power MOSFET in DPAK (TO-252) surface-mount package, rated for 60 V VDS, 14 A continuous drain current at TC = 25 °C, and 0.10 Ω RDS(on) at VGS = 5 V. It delivers fast switching with 11 ns turn-on delay and supports unclamped inductive switching up to 53 mJ avalanche energy - used in DC-DC converter high-side switches and motor drive half-bridges.
For engineers reviewing the IRLR024TR datasheet, IRLR024TR pinout, IRLR024TR application, or IRLR024TR equivalent, key selection considerations include its logic-level gate drive compatibility with 3.3 V/5 V microcontrollers, low thermal resistance (RthJC = 3.0 °C/W), and PCB-mount power dissipation of 2.5 W - critical for compact power stage designs requiring ruggedness and thermal efficiency.
Technical Context
This third-generation power MOSFET employs planar V-groove technology optimized for low RDS(on) and controlled dV/dt behavior. Its gate threshold voltage (1.0–2.0 V) enables reliable turn-on with standard logic drivers, while dynamic parameters - Qg = 18 nC, Qgd = 12 nC, and Ciss = 870 pF - support efficient hard-switching operation up to several hundred kHz.
The device integrates a robust body diode with trr = 130–260 ns and Qrr = 0.75–1.5 μC, enabling synchronous rectification and freewheeling in buck converters. Its maximum junction temperature of +150 °C and specified avalanche capability (EAS = 53 mJ) allow operation under transient overloads without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports 48 V nominal bus systems with 25 % headroom for transients |
| RDS(on) @ VGS = 5 V | 0.10 Ω - limits conduction loss to ≤0.79 W at 8.4 A, enabling thermally constrained layouts |
| ID (continuous, TC = 25 °C) | 14 A - delivers >100 W output in TO-252-mounted DC-DC stages with minimal heatsinking |
| Qg | 18 nC - determines gate drive power requirement; compatible with low-current logic drivers (e.g., STM32 GPIO) |
| td(on) | 11 ns - enables precise PWM timing control in high-frequency (>500 kHz) switch-mode applications |
| EAS | 53 mJ - sustains single-pulse inductive energy without failure during load dump or short-circuit events |
| RthJC | 3.0 °C/W - allows direct thermal coupling to copper pour or heatsink for stable <100 °C junction rise at full load |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; lead-free and halogen-free per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Logic-level compatible (VGS(th) = 1.0–2.0 V); requires ≤18 nC charge for full enhancement |
| D (Drain) | Main current path output | Exposed thermal pad on bottom side - must be soldered to ≥1"² copper area for RthJA = 50 °C/W |
| S (Source) | Current return / reference node | Low-inductance source connection critical for minimizing switching oscillation (LS = 7.5 nH) |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Turns fully on at VGS = 4.0 V (RDS(on) = 0.14 Ω), eliminating need for gate driver ICs in 3.3 V/5 V MCU systems |
| Dynamic dV/dt rating | 4.5 V/ns - suppresses false triggering during high-slew-rate switching in noisy industrial environments |
| Ruggedized avalanche capability | 53 mJ single-pulse EAS - enables reliable operation in inductive load switching without external clamping |
| Fast body diode recovery | trr = 130 ns (typ.), Qrr = 0.75 μC - reduces reverse recovery loss and EMI in synchronous rectifier topologies |
| Surface-mount optimized | DPAK footprint with thermal pad - supports vapor-phase reflow and achieves 2.5 W PCB-mount power dissipation |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: High-efficiency 12 V → 5 V/3.3 V point-of-load regulation in embedded controllers. IC Role / Device Role: High-side synchronous rectifier switch in integrated buck controller stage. Use Value: 0.10 Ω RDS(on) and 18 nC Qg minimize conduction + switching losses, achieving >92 % efficiency at 5 A load. |
Use Scenario: H-bridge half-bridge leg for 24 V brushed motor control in robotics and actuators. IC Role / Device Role: Low-side switching element driven directly by MCU GPIO with no level-shifting. Use Value: Logic-level VGS(th) ensures full enhancement at 3.3 V, while 56 A pulsed ID supports 2× stall current peaks. |
| LED Constant-Current Driver | Power Supply OR-ing Circuit |
|
Use Scenario: Dimmable constant-current LED string driver with PWM dimming up to 2 kHz. IC Role / Device Role: Series pass switch modulating current through high-brightness LED arrays. Use Value: Fast 11 ns td(on) and 41 ns tf enable clean PWM edges, eliminating visible flicker and reducing audible noise. |
Use Scenario: Redundant 48 V input OR-ing in telecom power shelves and server PSUs. IC Role / Device Role: Ideal diode replacement for Schottky in back-to-back configuration. Use Value: Low 1.5 V VSD body diode forward drop and 130 ns trr reduce forward conduction loss and reverse recovery stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR2905TRLPbF | VDS = 55 V, RDS(on) = 0.055 Ω @ 5 V, Qg = 34 nC - lower on-resistance but higher gate charge | Better for high-current, low-voltage (<40 V) applications where gate drive strength permits | Choose IRLR024TR when gate drive current is limited or 60 V rating is required; IRLR2905TRLPbF suits higher-efficiency 24 V systems with robust drivers |
| STP4NK60ZFP | VDS = 600 V, RDS(on) = 1.8 Ω @ 10 V, TO-220FP package - higher voltage, higher RDS(on), non-logic-level | Designed for offline SMPS primary side; incompatible with logic-level drive | Select IRLR024TR for low-voltage logic-driven switching; STP4NK60ZFP only fits high-voltage AC-DC primary applications |
Compared with IRLR2905TRLPbF, the IRLR024TR trades 45 % higher RDS(on) for 47 % lower Qg, enabling simpler gate drive; versus STP4NK60ZFP, it offers logic compatibility and surface-mount integration but lacks high-voltage isolation - making IRLR024TR optimal for compact, low-voltage, MCU-driven power stages.
Availability
IRLR024TR is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and LED drivers requiring stable component supply across industrial, automotive, and embedded design cycles.
Supply support for IRLR024TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The IRLR024TR belongs to Vishay's third-generation logic-level power MOSFET family, engineered for rugged, high-efficiency switching in space-constrained surface-mount power stages.
FAQ
What is the maximum continuous drain current for IRLR024TR at 100 °C case temperature?
The IRLR024TR supports 9.2 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be validated against actual PCB layout and ambient conditions. The IRLR024TR's RthJC = 3.0 °C/W enables predictable junction temperature estimation when mounted on adequate copper area.
Does IRLR024TR require a gate driver IC when used with a 3.3 V microcontroller?
No, the IRLR024TR does not require an external gate driver IC when driven by a 3.3 V microcontroller. Its gate threshold voltage range (1.0–2.0 V) and guaranteed RDS(on) = 0.14 Ω at VGS = 4.0 V ensure full enhancement with standard 3.3 V logic outputs. The IRLR024TR's 18 nC total gate charge is manageable with typical MCU GPIO sink/source capability (±20 mA).
What is the avalanche energy rating of IRLR024TR, and how is it tested?
The IRLR024TR is rated for 53 mJ single-pulse avalanche energy (EAS) under test conditions of VDD = 25 V, starting TJ = 25 °C, L = 541 μH, and Rg = 25 Ω. This rating confirms ruggedness during unclamped inductive switching events such as motor commutation or transformer reset. The IRLR024TR's specified EAS is measured per JEDEC standard JESD24-1 and documented in Vishay's S21-0818 Rev. F datasheet.
Can IRLR024TR be used in parallel configurations for higher current handling?
Yes, the IRLR024TR can be paralleled for increased current capacity, provided gate drive impedance is matched and PCB layout ensures symmetrical thermal and current paths. Its positive RDS(on) temperature coefficient promotes current sharing, and the DPAK package's low RthJC = 3.0 °C/W supports balanced thermal coupling. For reliable operation, the IRLR024TR should be mounted on identical copper areas with matched gate resistor values.
What is the body diode forward voltage of IRLR024TR, and how does it affect synchronous rectification?
The IRLR024TR body diode exhibits VSD = 1.5 V (max) at TJ = 25 °C and IS = 14 A, with reverse recovery time trr = 130–260 ns and Qrr = 0.75–1.5 μC. In synchronous rectification, this VSD sets the minimum forward conduction loss during dead-time, while low Qrr minimizes switching loss and EMI. The IRLR024TR's body diode performance is sufficient for medium-frequency buck converters but benefits from external Schottky clamping in high-dV/dt environments.
IRLR024TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 8.4A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 870 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRLR024TR FAQ
1.How can I place an order for IRLR024TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR024TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR024TR reliable?
The price and inventory of IRLR024TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR024TR is usually 5 days.
3.What payment methods are accepted for IRLR024TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR024TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR024TR?
IRLR024TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR024TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR024TR?
For technical support, including IRLR024TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR024TR requirements.
6.How does Aetrix verify that IRLR024TR is sourced from the original manufacturer or authorized distributors?
All IRLR024TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR024TR meets industry standards.
7.What is the process for return or replacement of IRLR024TR?
All IRLR024TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR024TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR024TR part is unused and in its original packaging.
Return procedure for IRLR024TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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