Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRLR024TRL

Part No.:
IRLR024TRL
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRLR024TRL.pdf
Description:
MOSFET N-CH 60V 14A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,988

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRLR024TRL from Vishay Siliconix is a logic-level N-channel power MOSFET in DPAK (TO-252) surface-mount package, rated for 60 V VDS, 14 A continuous drain current at TC = 25 °C, and 0.10 Ω RDS(on) at VGS = 5 V. It delivers fast switching with 11 ns turn-on delay and supports unclamped inductive switching up to 53 mJ avalanche energy, making it suitable for DC-DC converter high-side switches and motor drive half-bridges.

For engineers reviewing the IRLR024TRL datasheet, IRLR024TRL pinout, IRLR024TRL application, or IRLR024TRL equivalent, key selection criteria include its logic-level gate drive compatibility with 4–5 V microcontrollers, low thermal resistance (RthJC = 3.0 °C/W), and validated dV/dt ruggedness of 4.5 V/ns - critical for reliable operation in noisy industrial power stages.

Technical Context

This MOSFET employs third-generation trench-gate silicon technology optimized for low RDS(on) and fast switching while maintaining robust avalanche capability. Its gate threshold voltage (1.0–2.0 V) ensures full enhancement with standard 3.3 V/5 V logic outputs, and its dynamic parameters - Qg = 18 nC, Qgd = 12 nC - support efficient PWM control in synchronous buck converters operating up to 500 kHz.

The device integrates a body diode with trr = 130–260 ns and Qrr = 0.75–1.5 μC, enabling moderate-frequency freewheeling in non-synchronous topologies. Its maximum junction temperature of +150 °C and PCB-mount power dissipation of 2.5 W (on 1" FR-4) define thermal design boundaries for compact board layouts.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Supports 48 V nominal bus systems with 20 % margin for transients
RDS(on) @ VGS = 5 V0.10 Ω - Enables ≤1.2 W conduction loss at 14 A, reducing heatsink requirements
ID (continuous)14 A @ TC = 25 °C - Sustains high-current loads in motor gate drivers and SMPS primary switches
Qg18 nC - Determines gate driver current demand; ~1.8 mA avg. at 100 kHz, 10 V swing
EAS53 mJ - Withstands single-pulse inductive energy without failure in relay/snubberless designs
dV/dt rating4.5 V/ns - Resists false turn-on during high-slew-rate commutation in half-bridge configurations
RthJC3.0 °C/W - Allows direct thermal coupling to copper pour or heatsink for <10 °C rise at 42 W PD

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad on bottom for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Mounting requires vapor-phase or IR reflow per JEDEC J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
GGate control inputAccepts logic-level voltage (4–5 V); 100 nA leakage ensures stable off-state with high-impedance drivers
DDrain output / high-side switch nodeConnected to exposed thermal pad; carries full load current and must be routed over large copper area
SSource return / reference nodeProvides low-inductance path to ground plane; internal source inductance LS = 7.5 nH affects switching ringing

Key Features

FeatureDesign Value
Logic-level gate driveFull enhancement at VGS = 4 V enables direct interface with 3.3 V/5 V MCUs without level-shifting
Ruggedized dV/dt rating4.5 V/ns immunity prevents spurious turn-on in high-noise motor drive and inverter applications
Low gate chargeQg = 18 nC reduces driver power loss and improves efficiency in high-frequency PWM stages
Fast switchingtd(on) = 11 ns, tr = 110 ns enable >500 kHz operation in compact DC-DC converters
Avalanche-ratedSingle-pulse EAS = 53 mJ allows safe operation under inductive load interruption without external snubbers

Applications

Motor Drive Half-BridgeDC-DC Synchronous Buck

Use Scenario: Driving brushed DC motors in industrial actuators using complementary N-channel half-bridge topology.

IC Role / Device Role / Timing Role: High-side N-channel switch controlled by bootstrap gate driver; handles 12–48 V bus with 10–15 A peak load current.

Use Value: Logic-level VGS(th) and low RDS(on) minimize conduction loss and simplify gate drive design versus P-channel alternatives.

Use Scenario: High-efficiency 12 V input to 3.3 V/5 V output buck converter in embedded power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 300–500 kHz with tight duty-cycle control.

Use Value: Qgd/Qgs ratio of 2.7 enables clean zero-voltage switching transition, reducing crossover loss.

LED Constant-Current DriverPower OR-ing Circuit

Use Scenario: High-brightness LED string control in architectural lighting with PWM dimming up to 20 kHz.

IC Role / Device Role / Timing Role: Series pass switch modulating current through 24–48 V LED arrays; operates in linear and saturated regions.

Use Value: Low RDS(on) and 150 °C TJ(max) allow thermally constrained PCB mounting without active cooling.

Use Scenario: Redundant 24 V power supply OR-ing in telecom shelf systems requiring hot-swap capability.

IC Role / Device Role / Timing Role: Ideal diode replacement in back-to-back configuration; blocks reverse current and minimizes forward drop.

Use Value: Body diode VSD = 1.5 V at 14 A and fast trr reduce conduction loss and prevent shoot-through during switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR2905TRLPbF60 V VDS, 42 A ID, 0.035 Ω RDS(on) @ 5 V, larger die sizeHigher current handling; requires larger PCB copper area and higher gate drive currentSelect when >20 A continuous load or lower RDS(on) is required; not pin-compatible due to different thermal pad layout
SiHLR024TRL-GE3Identical VDS, ID, RDS(on), and pinout; Vishay's halogen-free variant with same DPAK footprintNo functional difference; qualified for RoHS/halogen-free compliance programsDrop-in replacement where lead-free/halogen-free certification is mandatory; identical thermal and electrical behavior

Compared with IRLR024TRL, IRLR2905TRLPbF offers lower on-resistance but demands higher gate charge and thermal management, while SiHLR024TRL-GE3 provides identical performance with enhanced environmental compliance - both require no schematic changes but differ in sourcing and qualification scope.

Availability

IRLR024TRL is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and LED lighting systems requiring stable component supply across extended production lifecycles.

Supply support for IRLR024TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRLR024TRL belongs to Vishay's logic-level Power MOSFET family designed for industrial and automotive power conversion where low gate drive voltage and high dV/dt immunity are essential.

FAQ

What is the maximum continuous drain current rating for IRLR024TRL at 100 °C case temperature?

The IRLR024TRL supports 9.2 A continuous drain current at TC = 100 °C, derived from its 14 A rating at 25 °C and linear derating factor of 0.33 W/°C. This value reflects thermal limits under real-world PCB-mount conditions and must be verified against actual board layout and ambient airflow in the final design.

Does IRLR024TRL require a gate resistor for reliable switching in a 100 kHz PWM application?

Yes, IRLR024TRL benefits from an external gate resistor (typically 5–25 Ω) to dampen ringing caused by its 7.5 nH internal source inductance and 12 nC Qgd. Without it, parasitic oscillation may exceed VGS = ±10 V absolute maximum, risking gate oxide damage during fast transitions.

Can IRLR024TRL be used in avalanche mode for energy clamping in relay-driving circuits?

Yes, IRLR024TRL is rated for single-pulse avalanche energy of 53 mJ (EAS) under defined test conditions (VDD = 25 V, IAS = 14 A). It can safely clamp inductive kickback in relay coils or solenoids, provided pulse width and repetition rate stay within fig. 12 limits and junction temperature remains below 150 °C.

What is the gate-source leakage current specification for IRLR024TRL at maximum rated voltage?

The gate-source leakage current for IRLR024TRL is specified as ±100 nA maximum at VGS = ±10 V and TJ = 25 °C. This low leakage ensures stable gate bias in high-impedance drive circuits and prevents unintended turn-on during long idle periods.

Is the thermal pad on the underside of the IRLR024TRL DPAK package electrically connected to the drain terminal?

Yes, the exposed thermal pad on the IRLR024TRL DPAK (TO-252) package is internally connected to the drain terminal. It must be soldered to a large copper pour tied to the drain net for both thermal conduction and electrical integrity - floating or grounded pads will compromise safety and performance.

IRLR024TRL Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Rds On (Max) @ Id, Vgs:
100mOhm @ 8.4A, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
870 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRLR024TRL FAQ

1.How can I place an order for IRLR024TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR024TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR024TRL reliable?

The price and inventory of IRLR024TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR024TRL is usually 5 days.

3.What payment methods are accepted for IRLR024TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR024TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR024TRL?

IRLR024TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR024TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR024TRL?

For technical support, including IRLR024TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR024TRL requirements.

6.How does Aetrix verify that IRLR024TRL is sourced from the original manufacturer or authorized distributors?

All IRLR024TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR024TRL meets industry standards.

7.What is the process for return or replacement of IRLR024TRL?

All IRLR024TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRLR024TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR024TRL part is unused and in its original packaging.

Return procedure for IRLR024TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRLR024TRL Tags

  • IRLR024TRL
  • IRLR024TRL PDF
  • IRLR024TRL Datasheet
  • IRLR024TRL Specifications
  • IRLR024TRL Images
  • Vishay Siliconix
  • Vishay Siliconix IRLR024TRL
  • Buy IRLR024TRL
  • IRLR024TRL Price
  • IRLR024TRL Distributor
  • IRLR024TRL Supplier
  • IRLR024TRL Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER