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Vishay Siliconix IRLR024TRPBF
- Part No.:
- IRLR024TRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR024TRPBF.pdf
- Description:
- MOSFET N-CH 60V 14A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,495
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Product details
Overview
IRLR024TRPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in DPAK (TO-252) surface-mount package, rated for 60 V VDS, 14 A continuous drain current at TC = 25 °C, and 0.10 Ω RDS(on) at VGS = 5 V. It delivers fast switching with 18 nC total gate charge and supports high-reliability DC-DC converter, motor drive, and load switch applications requiring ruggedized operation up to 150 °C junction temperature.
For engineers reviewing the IRLR024TRPBF datasheet, IRLR024TRPBF pinout, IRLR024TRPBF application, or IRLR024TRPBF equivalent, this page provides verified technical context, validated pin configuration, real-world application mappings, and confirmed alternative parts with documented functional and packaging differences - all derived from Vishay's official S21-0818-Rev. F datasheet and package drawings.
Technical Context
This MOSFET employs third-generation trench-gate silicon technology optimized for low conduction loss and dynamic dV/dt robustness. Its gate threshold voltage (1.0–2.0 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting, while its 12 nC Qgd and 4.5 nC Qgs support efficient hard-switching in synchronous buck converters.
The device integrates a fast-recovery body diode (trr = 130–260 ns, Qrr = 0.75–1.5 μC) and is characterized for unclamped inductive switching (EAS = 53 mJ), making it suitable for freewheeling and flyback topologies where diode recovery stress is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus systems. |
| RDS(on) @ VGS = 5 V | 0.10 Ω - Confirmed on-resistance at logic-level gate drive; enables ≤1.4 W conduction loss at 12 A. |
| ID (continuous, TC = 25 °C) | 14 A - Rated drain current with heatsink; supports ≥10 A sustained load in PCB-mounted designs. |
| Qg (total) | 18 nC - Total gate charge determines driver strength requirement; compatible with standard 1-A peak gate drivers. |
| tr/tf | 110 ns / 41 ns - Rise/fall times measured at VDD = 30 V, Rg = 9 Ω; enables >500 kHz switching in SMPS. |
| RthJC | 3.0 °C/W - Junction-to-case thermal resistance; allows direct thermal interface to copper pour or heatsink for thermal management. |
| VGS(th) | 1.0–2.0 V - Gate threshold range ensures reliable turn-on with 3.3 V logic; avoids partial enhancement in noise-prone environments. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; lead (Pb)-free and halogen-free per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts logic-level voltage (≥2.0 V) to fully enhance channel; requires <100 nA leakage current budget. |
| D (Drain) | High-side power output | Connected to exposed thermal pad; carries full load current and must be routed over large copper area for heat dissipation. |
| S (Source) | Reference node / return path | Common source for gate drive loop; low-inductance layout critical to minimize switching oscillation and EMI. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.0 V (RDS(on) = 0.14 Ω), eliminating need for gate driver ICs in 3.3 V/5 V MCU-based systems. |
| Ruggedized dV/dt rating | 4.5 V/ns peak diode recovery dV/dt capability prevents false turn-on during high-speed commutation in inductive loads. |
| Fast body diode | 130–260 ns reverse recovery time and 0.75–1.5 μC Qrr reduce switching loss and voltage overshoot in synchronous rectification. |
| Surface-mount DPAK | TO-252 outline enables automated assembly and 2.5 W power dissipation on FR-4 PCB without heatsink (per RthJA = 50 °C/W). |
| Avalanche-rated | 53 mJ single-pulse avalanche energy (EAS) supports robust operation under inductive fault conditions without external snubbers. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: High-efficiency 12 V to 3.3 V point-of-load regulator in industrial PLC modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switching at 300–500 kHz with gate driven by controller PWM output. Use Value: 0.10 Ω RDS(on) minimizes conduction loss; fast tr/tf reduces transition loss; logic-level gate eliminates level shifter. |
Use Scenario: H-bridge half-bridge leg controlling 24 V brushed motor in HVAC actuator. IC Role / Device Role / Timing Role: High-current switching element handling bidirectional 10 A peak motor current with PWM duty cycling. Use Value: 14 A continuous rating supports motor stall current; rugged dV/dt rating prevents shoot-through during direction reversal. |
| Hot-Swap Load Switch | LED Constant-Current Driver |
|
Use Scenario: Inrush-limited 48 V backplane power distribution in telecom shelf systems. IC Role / Device Role / Timing Role: Main pass transistor controlled by dedicated hot-swap controller to limit inrush dv/dt and current slew rate. Use Value: Low RDS(on) limits voltage drop across switch; 60 V rating accommodates 48 V nominal + transients; TO-252 thermal pad aids steady-state dissipation. |
Use Scenario: Dimmable constant-current LED driver for architectural lighting with 36 V string voltage. IC Role / Device Role / Timing Role: PWM-controlled current sink regulating LED string current via source-follower configuration. Use Value: 1.0–2.0 V VGS(th) ensures precise low-current regulation down to 10 mA; fast switching enables smooth 1–10 kHz dimming. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR024ZTRPBF | Same DPAK package and 60 V rating, but 0.055 Ω RDS(on) at VGS = 4.5 V; higher Qg (29 nC) and cost. | Better conduction efficiency at high current; less suitable for ultra-high-frequency (>1 MHz) switching due to higher gate charge. | Select IRLR024ZTRPBF only when RDS(on) reduction justifies increased gate drive demand and BOM cost. |
| SiHLR024TRL-GE3 | Vishay's halogen-free, lead-free variant in identical DPAK; same RDS(on), Qg, and thermal specs; RoHS-compliant marking and plating. | No functional difference; required for strict environmental compliance programs (e.g., EU medical, automotive). | Choose SiHLR024TRL-GE3 when RoHS/REACH documentation and halogen-free certification are mandatory for end-product certification. |
Compared with IRLR024TRPBF, IRLR024ZTRPBF trades lower on-resistance for higher gate charge and cost, while SiHLR024TRL-GE3 offers identical electrical performance with certified green materials - enabling direct substitution where compliance, not performance, drives selection.
Availability
IRLR024TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and hot-swap load switches requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and embedded OEM production.
Supply support for IRLR024TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRLR024TRPBF belongs to Vishay's third-generation logic-level power MOSFET family, engineered specifically for high-efficiency, surface-mount power conversion and load switching where low gate drive voltage and rugged transient performance are essential.
FAQ
What is the maximum continuous drain current for IRLR024TRPBF at 100 °C case temperature?
The IRLR024TRPBF supports 9.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table of Vishay's S21-0818-Rev. F datasheet. This derating reflects thermal limitations of the DPAK package and must be applied when ambient or board temperatures exceed 25 °C without forced cooling.
Does IRLR024TRPBF have avalanche capability, and how is it rated?
Yes, the IRLR024TRPBF is rated for single-pulse avalanche energy of 53 mJ (EAS) under test conditions of VDD = 25 V, starting TJ = 25 °C, L = 541 μH, and Rg = 25 Ω. This rating confirms its ability to withstand inductive energy dump without failure, supporting robust design in relay drivers and solenoid controls.
What is the gate-source threshold voltage range for IRLR024TRPBF, and why does it matter?
The IRLR024TRPBF has a VGS(th) range of 1.0 V to 2.0 V at TJ = 25 °C. This low, well-defined threshold ensures full enhancement with 3.3 V microcontroller outputs and prevents partial turn-on in noisy environments - directly enabling reliable logic-level operation without external gate biasing.
Can IRLR024TRPBF be used in place of IRLU024PbF in a new design?
No - IRLR024TRPBF uses a DPAK (TO-252) surface-mount package, while IRLU024PbF uses an IPAK (TO-251) through-hole package with straight leads. The footprint, soldering process, and thermal mounting differ fundamentally; PCB layout and assembly must be redesigned for IRLR024TRPBF.
What is the typical body diode forward voltage of IRLR024TRPBF at 14 A and 25 °C?
The typical body diode forward voltage (VSD) of IRLR024TRPBF is 1.5 V at TJ = 25 °C and IS = 14 A with VGS = 0 V, as stated in the "Drain-Source Body Diode Characteristics" section of the datasheet. This value impacts conduction loss during freewheeling phases in buck or flyback converters.
IRLR024TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 8.4A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 870 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRLR024TRPBF FAQ
1.How can I place an order for IRLR024TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR024TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR024TRPBF reliable?
The price and inventory of IRLR024TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR024TRPBF is usually 5 days.
3.What payment methods are accepted for IRLR024TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR024TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR024TRPBF?
IRLR024TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR024TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR024TRPBF?
For technical support, including IRLR024TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR024TRPBF requirements.
6.How does Aetrix verify that IRLR024TRPBF is sourced from the original manufacturer or authorized distributors?
All IRLR024TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR024TRPBF meets industry standards.
7.What is the process for return or replacement of IRLR024TRPBF?
All IRLR024TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR024TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR024TRPBF part is unused and in its original packaging.
Return procedure for IRLR024TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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