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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLR110

Name: IRLR110
Brand: Vishay Siliconix
SKU: IRLR110
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR110

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR110.pdf

Description:: MOSFET N-CH 100V 4.3A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,645

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Product details

Overview

IRLR110 from Vishay Siliconix is a 100 V, 4.3 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring logic-level gate drive (V_GS(th) = 1.0–2.0 V), R_DS(on) = 0.54 Ω at V_GS = 5 V, and repetitive avalanche rating for robust switching in DC-DC converters and motor control circuits.

For engineers reviewing the IRLR110 datasheet, IRLR110 pinout, IRLR110 application, or IRLR110 equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics (t_rr = 100–130 ns), and PCB-mount power dissipation limits (2.5 W) critical for high-reliability industrial power design.

Technical Context

The IRLR110 employs third-generation trench-gate silicon technology optimized for fast switching with low gate charge (Q_g = 6.1 nC) and low output capacitance (C_oss = 80 pF), enabling efficient operation in 100–500 kHz SMPS topologies. Its dynamic dV/dt rating (5.5 V/ns) and unclamped inductive switching capability (E_AS = 100 mJ) support rugged operation under transient overvoltage conditions.

Thermal performance is defined by R_thJC = 5.0 °C/W (junction-to-case) and R_thJA = 50 °C/W (PCB mount), requiring a minimum 1" × 1" FR-4 copper area for rated 2.5 W dissipation. The device integrates an intrinsic body diode with V_SD = 2.5 V at I_S = 4.3 A and Q_rr = 0.50–0.65 μC for synchronous rectification compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for use in 48 V bus and flyback primary-side switching
R_DS(on) @ V_GS = 5 V	0.54 Ω - Enables ≤2.3 W conduction loss at 3 A DC current in compact SMT layout
Q_g	6.1 nC - Low gate drive energy supports efficient 3.3 V/5 V microcontroller interface without external driver
I_D (T_C = 25 °C)	4.3 A - Continuous current rating with heatsink; derates linearly to 2.7 A at 100 °C case temperature
E_AS	100 mJ - Single-pulse avalanche energy allows safe operation during inductive load turn-off transients
t_rr	100–130 ns - Fast body diode recovery minimizes cross-conduction losses in half-bridge configurations
R_thJA (PCB mount)	50 °C/W - Requires ≥1"² copper pour on FR-4 for thermal compliance at full 2.5 W ambient-rated power

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standard 3-pin configuration optimized for automated assembly and thermal management on PCBs.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Logic-level compatible; threshold 1.0–2.0 V enables direct drive from 3.3 V/5 V MCU GPIO
D (Drain)	High-side switch node	Exposed metal tab - electrically connected to drain; must be routed to high-voltage net and thermally coupled to copper pour
S (Source)	Power return / reference	Common source node for gate drive return path and current sensing; low-inductance layout critical for EMI control

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.0 V (R_DS(on) = 0.76 Ω), eliminating need for level-shifting circuitry in low-voltage control systems
Repetitive avalanche rated	Rated for I_AR = 4.3 A and E_AR = 2.5 mJ, enabling reliable operation in inductive switching applications without snubber networks
Dynamic dV/dt immunity	5.5 V/ns rating prevents false turn-on during high-slew-rate voltage transients in motor drives and SMPS
Low Q_gd/Q_g ratio	Q_gd = 3.3 nC of total Q_g = 6.1 nC (54%) ensures Miller plateau control and stable hard-switching behavior
Surface-mount optimized	DPAK footprint supports vapor-phase and IR reflow; thermal pad design enables 2.5 W PCB-mount power dissipation per JEDEC standards

Applications

DC-DC Converter Primary Switch	Brushed DC Motor Driver High-Side
Use Scenario: 48 V input buck converter operating at 250 kHz in industrial PLC power supply. IC Role / Device Role / Timing Role: N-channel high-side switch controlling energy transfer into output inductor; driven by PWM controller with 5 V gate signal. Use Value: 0.54 Ω R_DS(on) and 6.1 nC Q_g minimize conduction and switching losses, achieving >92% efficiency at 3 A load.	Use Scenario: 24 V brushed motor H-bridge with integrated high-side control in HVAC actuator module. IC Role / Device Role / Timing Role: High-side power switch enabling bidirectional motor control; body diode handles freewheeling current during PWM off-time. Use Value: 100–130 ns t_rr and 0.65 μC Q_rr reduce shoot-through risk and diode conduction loss during commutation.
LED Driver Constant-Current Switch	Overvoltage Protection Circuit
Use Scenario: Constant-current LED string driver for commercial lighting with 36 V bus and 1.2 A output. IC Role / Device Role / Timing Role: Low-side current-regulating switch modulated at 1 kHz to set average LED current; senses current via shunt resistor. Use Value: 4.3 A continuous rating and 100 mJ E_AS tolerate surge currents during cold-start and line transients without failure.	Use Scenario: Input-stage clamping circuit protecting downstream DC-DC regulator from 100 V surges in automotive accessory power. IC Role / Device Role / Timing Role: Avalanche-rated switch conducting transient energy into ground during overvoltage events; triggered by external comparator. Use Value: Repetitive avalanche rating (I_AR = 4.3 A, E_AR = 2.5 mJ) enables repeated surge handling without parameter drift or degradation.

DC-DC Converter Primary Switch

Brushed DC Motor Driver High-Side

Use Scenario: 48 V input buck converter operating at 250 kHz in industrial PLC power supply.

IC Role / Device Role / Timing Role: N-channel high-side switch controlling energy transfer into output inductor; driven by PWM controller with 5 V gate signal.

Use Value: 0.54 Ω R_DS(on) and 6.1 nC Q_g minimize conduction and switching losses, achieving >92% efficiency at 3 A load.

Use Scenario: 24 V brushed motor H-bridge with integrated high-side control in HVAC actuator module.

IC Role / Device Role / Timing Role: High-side power switch enabling bidirectional motor control; body diode handles freewheeling current during PWM off-time.

Use Value: 100–130 ns t_rr and 0.65 μC Q_rr reduce shoot-through risk and diode conduction loss during commutation.

LED Driver Constant-Current Switch

Overvoltage Protection Circuit

Use Scenario: Constant-current LED string driver for commercial lighting with 36 V bus and 1.2 A output.

IC Role / Device Role / Timing Role: Low-side current-regulating switch modulated at 1 kHz to set average LED current; senses current via shunt resistor.

Use Value: 4.3 A continuous rating and 100 mJ E_AS tolerate surge currents during cold-start and line transients without failure.

Use Scenario: Input-stage clamping circuit protecting downstream DC-DC regulator from 100 V surges in automotive accessory power.

IC Role / Device Role / Timing Role: Avalanche-rated switch conducting transient energy into ground during overvoltage events; triggered by external comparator.

Use Value: Repetitive avalanche rating (I_AR = 4.3 A, E_AR = 2.5 mJ) enables repeated surge handling without parameter drift or degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR024N	Lower V_DS (55 V), lower R_DS(on) (0.077 Ω @ 5 V), higher I_D (13 A); same DPAK package	Not suitable for 100 V bus applications; better for 12–24 V systems requiring lower conduction loss	Select IRLR024N only when maximum blocking voltage ≤55 V and higher current capacity is required.
SiHLR110-GE3	Pb-free/halogen-free variant of identical die and DPAK package; identical R_DS(on), Q_g, and avalanche ratings	No functional difference; required for RoHS-compliant or green manufacturing programs	Choose SiHLR110-GE3 when lead-free compliance is mandated; otherwise IRLR110PbF offers identical performance.

Compared with IRLR110, IRLR024N trades off voltage rating for lower on-resistance and higher current, while SiHLR110-GE3 provides identical electrical and thermal behavior in an environmentally compliant package-neither is pin-compatible drop-in replacement without verifying board-level compliance and sourcing requirements.

Availability

IRLR110 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED drivers, and overvoltage protection circuits requiring stable component supply across industrial and embedded production cycles.

Supply support for IRLR110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The IRLR110 belongs to Vishay's logic-level power MOSFET product line engineered for high-efficiency, surface-mount switching in space-constrained industrial and automotive auxiliary systems.

FAQ

What is the maximum continuous drain current for IRLR110 at 100 °C case temperature?

The IRLR110 supports 2.7 A continuous drain current at T_C = 100 °C, based on its linear derating factor of 0.20 W/°C from the 25 °C rating of 4.3 A. This value assumes proper PCB thermal management per the 1" square FR-4 mounting condition specified in the datasheet. Exceeding this current without additional heatsinking risks junction temperature exceedance beyond 150 °C.

Does IRLR110 require a gate driver IC when used with a 3.3 V microcontroller?

No, the IRLR110 does not require an external gate driver IC when driven by a 3.3 V microcontroller. Its logic-level gate threshold (V_GS(th) = 1.0–2.0 V) and guaranteed R_DS(on) = 0.76 Ω at V_GS = 4.0 V enable full enhancement from standard 3.3 V GPIO outputs. However, gate resistance should be selected to limit peak current and control switching speed per layout constraints.

What is the avalanche energy rating of IRLR110, and how is it tested?

The IRLR110 has a single-pulse avalanche energy rating (E_AS) of 100 mJ, measured under test conditions of V_DD = 25 V, starting T_J = 25 °C, L = 8.1 mH, R_g = 25 Ω, and I_AS = 4.3 A. This rating confirms safe operation during unclamped inductive turn-off events, such as relay coil de-energization or motor phase commutation, without device failure.

Can IRLR110 be used in parallel with other MOSFETs for higher current handling?

Yes, the IRLR110 can be paralleled for increased current capacity, but careful attention must be paid to gate drive symmetry, source inductance matching, and thermal coupling. Its positive R_DS(on) temperature coefficient promotes current sharing, and the low Q_gd/Q_g ratio (54%) improves dynamic balance. Layout must minimize loop inductance differences to avoid current imbalance during switching transitions.

What is the recommended PCB pad layout for IRLR110 in DPAK (TO-252) package?

Vishay recommends a minimum 0.224" × 0.420" (5.69 mm × 10.67 mm) copper pad for the drain thermal tab of the IRLR110, with at least two 0.055" (1.397 mm) thermal vias connecting to inner-layer ground planes. The gate and source pads should follow standard SMT guidelines with controlled impedance routing; full details are provided in Application Note 826 (Document #72594).

IRLR110 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 2.6A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.1 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRLR110 FAQ

1.How can I place an order for IRLR110 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR110 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR110 reliable?

The price and inventory of IRLR110 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR110 is usually 5 days.

3.What payment methods are accepted for IRLR110?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR110 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR110?

IRLR110 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR110 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR110?

For technical support, including IRLR110 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR110 requirements.

6.How does Aetrix verify that IRLR110 is sourced from the original manufacturer or authorized distributors?

All IRLR110 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR110 meets industry standards.

7.What is the process for return or replacement of IRLR110?

All IRLR110 units undergo pre-shipment inspection (PSI). If there is an issue with IRLR110, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR110 part is unused and in its original packaging.

Return procedure for IRLR110:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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