Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRLR110TR

Part No.:
IRLR110TR
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRLR110TR.pdf
Description:
MOSFET N-CH 100V 4.3A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,867

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRLR110TR from Vishay Siliconix is a logic-level N-channel power MOSFET in DPAK (TO-252) surface-mount package, rated for 100 V drain-source voltage, 4.3 A continuous drain current at TC = 25 °C, and 0.54 Ω RDS(on) at VGS = 5 V. It supports fast switching with 6.1 nC total gate charge and features repetitive avalanche capability for robustness in inductive load circuits such as DC-DC converters and motor drivers.

For engineers reviewing the IRLR110TR datasheet, IRLR110TR pinout, IRLR110TR application, or IRLR110TR equivalent, this device is selected for high-efficiency low-voltage switching where logic-level gate drive compatibility, thermal performance on PCB mount, and unclamped inductive switching reliability are critical design requirements.

Technical Context

This third-generation power MOSFET uses planar V-groove technology to achieve low RDS(on) while maintaining rugged dynamic dV/dt rating (5.5 V/ns) and specified avalanche energy (100 mJ single-pulse, 2.5 mJ repetitive). Its gate threshold voltage (1.0–2.0 V) ensures turn-on with standard 3.3 V or 5 V logic outputs.

The device integrates a body diode with 100–130 ns reverse recovery time and 0.50–0.65 μC Qrr, enabling use in synchronous rectification and freewheeling paths without external diodes in many medium-frequency (<100 kHz) topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Supports input rails up to 80 V DC with safety margin in buck converters and battery-powered systems.
RDS(on) @ VGS = 5 V 0.54 Ω - Enables <1.2 W conduction loss at 4.3 A, suitable for thermally constrained SMT layouts.
Qg 6.1 nC - Low gate charge allows fast switching with modest gate driver current (e.g., 100 mA peak).
ID (continuous, TC = 25 °C) 4.3 A - Rated for sustained current in heatsinked or copper-pour PCB applications.
EAS 100 mJ - Withstands unclamped inductive energy spikes in relay drivers and solenoid controls without failure.
RthJA (PCB mount) 50 °C/W - Achieves 2.5 W power dissipation on 1" FR-4 board, defining practical SMT thermal limits.
VGS(th) 1.0–2.0 V - Ensures reliable enhancement-mode turn-on with 3.3 V microcontroller GPIOs.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Standard footprint per Vishay Application Note 826: 6.18 mm × 10.67 mm pad layout with 2.29 mm lead pitch.

Pin/Terminal Circuit Role Design Meaning
Gate (G) Control terminal Receives logic-level voltage (≥2.0 V) to fully enhance channel; requires <100 nA leakage current handling.
Drain (D) High-side switch node Connected to PCB thermal pad; carries full load current and dissipates heat via copper pour or heatsink interface.
Source (S) Reference/return path Serves as local ground reference for gate drive; internal source inductance (7.5 nH) affects switching ringing.

Key Features

Feature Design Value
Logic-level gate drive Turns on fully at VGS = 4.0 V (RDS(on) = 0.76 Ω), compatible with 3.3 V and 5 V digital controllers without level shifters.
Repetitive avalanche rated Rated for 4.3 A repetitive avalanche current and 2.5 mJ energy, enabling reliable operation in flyback and boost converter primary switches.
Dynamic dV/dt immunity 5.5 V/ns rating prevents false turn-on during high-slew transient events in noisy industrial environments.
Surface-mount (DPAK) TO-252 outline enables automated assembly and efficient PCB thermal management using standard reflow profiles.
Low Qgd/Qg ratio Qgd = 3.3 nC / Qg = 6.1 nC ≈ 54% - Reduces Miller plateau duration, improving hard-switching efficiency and EMI behavior.

Applications

DC-DC Buck Converter Brushed DC Motor Driver

Use Scenario: Step-down regulation from 24 V battery to 5 V/3.3 V for embedded control modules.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 100–500 kHz with PWM-controlled duty cycle.

Use Value: 0.54 Ω RDS(on) minimizes conduction loss; 6.1 nC Qg enables clean 200 ns turn-off, reducing switching loss.

Use Scenario: H-bridge half-bridge leg driving 12 V, 3 A brushed motor in portable power tools.

IC Role / Device Role / Timing Role: Low-side switching element controlled by microcontroller GPIO with dead-time management.

Use Value: Logic-level VGS(th) ensures full enhancement at 3.3 V; 100 mJ EAS withstands inductive kickback during PWM commutation.

LED Constant-Current Driver Industrial Relay/Solenoid Interface

Use Scenario: Constant-current dimming of high-brightness LED strings in signage and lighting fixtures.

IC Role / Device Role / Timing Role: Low-side current-sense switch modulated at 1–10 kHz for analog-like brightness control.

Use Value: 4.3 A continuous rating supports >10 W LED loads; low RDS(on) reduces sense resistor power loss and improves efficiency.

Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V AC/DC solenoids in PLC I/O modules.

IC Role / Device Role / Timing Role: Unclamped inductive load switch with integrated body diode for flyback path.

Use Value: Repetitive avalanche rating (2.5 mJ) eliminates need for external snubber; TO-252 thermal pad sustains 2.5 W dissipation on standard PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRLR7843PbF 60 V VDS, 0.013 Ω RDS(on) @ 10 V, higher Qg (34 nC), same DPAK package Better for high-current, low-voltage (<30 V) applications; unsuitable for 100 V bus designs Select IRLR110TR when 100 V rating, lower gate charge, and logic-level drive are required over ultra-low RDS(on).
SiHLR110TR-GE3 Identical electrical specs and DPAK package; Pb-free/halogen-free construction per JEDEC J-STD-609 No functional difference; preferred for RoHS-compliant production with tighter material compliance Choose SiHLR110TR-GE3 for new designs requiring halogen-free qualification; IRLR110TR remains valid for legacy or cost-sensitive builds.

Compared with IRLR7843PbF, the IRLR110TR offers higher voltage tolerance and lower gate drive demand but higher on-resistance; versus SiHLR110TR-GE3, it shares identical performance while differing only in material compliance status and orderable part marking.

Availability

IRLR110TR is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, and industrial solenoid interfaces requiring stable component supply across long-lifecycle embedded programs.

Supply support for IRLR110TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLR110TR belongs to Vishay's logic-level power MOSFET family engineered for efficient, low-voltage switching in space-constrained surface-mount applications where gate drive simplicity and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current for IRLR110TR at 100 °C case temperature?

The IRLR110TR supports 2.7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be validated against actual PCB layout and ambient conditions in the final design.

Does IRLR110TR require a gate resistor for safe switching?

Yes - a gate resistor is recommended to control dI/dt and suppress ringing caused by the IRLR110TR's 7.5 nH internal source inductance and 3.3 nC Qgd. Typical values range from 10 Ω to 47 Ω depending on switching frequency and driver strength; values below 5 Ω may cause overshoot and EMI issues in hard-switched applications.

Is IRLR110TR suitable for use in a synchronous rectifier configuration?

The IRLR110TR can serve as a synchronous rectifier in low-frequency (<100 kHz) flyback or forward converters due to its 100–130 ns body diode reverse recovery time and 0.50–0.65 μC Qrr. However, its RDS(on) is higher than dedicated sync rectifiers, so efficiency gains are most pronounced at moderate loads and temperatures.

What is the thermal resistance from junction to ambient for IRLR110TR mounted on a standard PCB?

When mounted on a 1" square FR-4 PCB, the IRLR110TR exhibits RthJA = 50 °C/W. This value enables 2.5 W power dissipation at TA = 25 °C before reaching the 150 °C max junction temperature, assuming no additional heatsinking beyond standard copper pour.

Can IRLR110TR replace IRLU110 in an existing through-hole design?

No - IRLR110TR uses the DPAK (TO-252) surface-mount package, whereas IRLU110 uses the IPAK (TO-251) straight-lead through-hole package. The pinouts differ: IRLR110TR has G-D-S pin order with exposed drain pad; IRLU110 has G-D-S with vertical leads. Direct replacement requires PCB redesign and requalification.

IRLR110TR Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Rds On (Max) @ Id, Vgs:
540mOhm @ 2.6A, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.1 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
250 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRLR110TR FAQ

1.How can I place an order for IRLR110TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR110TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR110TR reliable?

The price and inventory of IRLR110TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR110TR is usually 5 days.

3.What payment methods are accepted for IRLR110TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR110TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR110TR?

IRLR110TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR110TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR110TR?

For technical support, including IRLR110TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR110TR requirements.

6.How does Aetrix verify that IRLR110TR is sourced from the original manufacturer or authorized distributors?

All IRLR110TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR110TR meets industry standards.

7.What is the process for return or replacement of IRLR110TR?

All IRLR110TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR110TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR110TR part is unused and in its original packaging.

Return procedure for IRLR110TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRLR110TR Tags

  • IRLR110TR
  • IRLR110TR PDF
  • IRLR110TR Datasheet
  • IRLR110TR Specifications
  • IRLR110TR Images
  • Vishay Siliconix
  • Vishay Siliconix IRLR110TR
  • Buy IRLR110TR
  • IRLR110TR Price
  • IRLR110TR Distributor
  • IRLR110TR Supplier
  • IRLR110TR Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER