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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLR110TRPBF-BE3

Name: IRLR110TRPBF-BE3
Brand: Vishay Siliconix
SKU: IRLR110TRPBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR110TRPBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR110TRPBF-BE3.pdf

Description:: N-CHANNEL 100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR110TRPBF-BE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in DPAK (TO-252) surface-mount package, rated for 100 V drain-source voltage, 4.3 A continuous drain current at T_C = 25 °C, and 0.54 Ω R_DS(on) at V_GS = 5 V. It supports fast switching with 6.1 nC total gate charge and features repetitive avalanche capability (4.3 A, 2.5 mJ), making it suitable for DC-DC converters, motor control circuits, and load switching in industrial power supplies.

For engineers reviewing the IRLR110TRPBF-BE3 datasheet, IRLR110TRPBF-BE3 pinout, IRLR110TRPBF-BE3 application, or IRLR110TRPBF-BE3 equivalent, key selection considerations include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low on-resistance at 4 V gate drive (0.76 Ω), dV/dt ruggedness (5.5 V/ns), and PCB-mount thermal performance (R_thJA = 50 °C/W).

Technical Context

This MOSFET employs third-generation trench-gate silicon technology optimized for high-speed switching and ruggedized operation under unclamped inductive loads. Its dynamic dV/dt rating and repetitive avalanche capability enable reliable operation in flyback and buck converter topologies without external snubbers.

The device integrates a low-forward-drop body diode (V_SD = 2.5 V at 4.3 A) with reverse recovery time of 100–130 ns and Q_rr = 0.50–0.65 μC, supporting synchronous rectification and bidirectional current handling in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports input rails up to 80 V DC with margin for transients in industrial power systems.
R_DS(on) @ V_GS = 5 V	0.54 Ω - Enables <1.2 W conduction loss at 4.3 A, reducing heatsink requirements in compact designs.
Q_g	6.1 nC - Low gate charge allows efficient driving with standard logic-level gate drivers (e.g., TC4420) at >100 kHz.
I_D (continuous)	4.3 A @ T_C = 25 °C - Sustains full-rated current with minimal derating when mounted on 1" FR-4 PCB.
E_AS	100 mJ - Withstands single-pulse inductive energy events (e.g., relay coil de-energization) without failure.
dV/dt rating	5.5 V/ns - Resists false turn-on during high-slew-rate noise transients in motor drive and SMPS gate nodes.
T_J range	−55 to +150 °C - Qualified for extended-temperature operation in automotive under-hood and industrial control environments.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal enhancement; compatible with vapor-phase, infrared, and wave soldering per JEDEC standards. Thermal pad requires minimum 10.67 mm × 5.69 mm copper area on PCB for optimal R_thJA = 50 °C/W performance.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Logic-level compatible (V_GS(th) = 1.0–2.0 V); accepts 3.3 V/5 V microcontroller outputs directly.
D (Drain)	Main current output terminal	Exposed metal tab - must be connected to high-current ground/power plane; primary thermal path to PCB.
S (Source)	Main current return terminal	Reference node for gate drive; ties to low-side switch common; influences body diode conduction direction.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4 V, enabling direct interface with 3.3 V MCU GPIOs without level-shifting.
Repetitive avalanche rated	Rated for 4.3 A repetitive avalanche current and 2.5 mJ energy - eliminates need for external clamping in inductive load switching.
Dynamic dV/dt immunity	5.5 V/ns rating prevents spurious turn-on during fast voltage transients in high-noise motor drive environments.
Low Q_gd/Q_g ratio	Q_gd = 3.3 nC / Q_g = 6.1 nC → ~54% - improves Miller immunity and enables stable hard-switching above 200 kHz.
Body diode softness	trr = 100–130 ns with Q_rr = 0.50–0.65 μC - reduces EMI and voltage overshoot during freewheeling in buck and half-bridge topologies.

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: Step-down regulation from 24 V to 5 V/3.3 V for embedded controllers and sensors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 200–500 kHz PWM frequency. Use Value: 0.54 Ω R_DS(on) minimizes conduction loss; low Q_g ensures efficient gate drive with minimal driver power consumption.	Use Scenario: H-bridge half-bridge leg controlling 12–24 V brushed motors in industrial actuators. IC Role / Device Role / Timing Role: High-current, logic-level-controlled power switch with integrated body diode for freewheeling. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation; dV/dt immunity prevents shoot-through.
LED Constant-Current Driver	Hot-Swap Load Switch
Use Scenario: Precision current regulation for high-brightness LED strings in signage and lighting fixtures. IC Role / Device Role / Timing Role: Low-side current-sense FET in constant-current feedback loop with op-amp controller. Use Value: Tight V_GS(th) tolerance (1.0–2.0 V) enables accurate current setting; low R_DS(on) reduces sense voltage error.	Use Scenario: Inrush-limited power delivery to hot-pluggable modules in telecom and server backplanes. IC Role / Device Role / Timing Role: Main pass element controlled by dedicated load switch IC or discrete RC timing network. Use Value: 100 V V_DS headroom accommodates 48 V systems with surge margin; robust SOA supports safe startup into capacitive loads.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 24 V to 5 V/3.3 V for embedded controllers and sensors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 200–500 kHz PWM frequency.

Use Value: 0.54 Ω R_DS(on) minimizes conduction loss; low Q_g ensures efficient gate drive with minimal driver power consumption.

Use Scenario: H-bridge half-bridge leg controlling 12–24 V brushed motors in industrial actuators.

IC Role / Device Role / Timing Role: High-current, logic-level-controlled power switch with integrated body diode for freewheeling.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation; dV/dt immunity prevents shoot-through.

LED Constant-Current Driver

Hot-Swap Load Switch

Use Scenario: Precision current regulation for high-brightness LED strings in signage and lighting fixtures.

IC Role / Device Role / Timing Role: Low-side current-sense FET in constant-current feedback loop with op-amp controller.

Use Value: Tight V_GS(th) tolerance (1.0–2.0 V) enables accurate current setting; low R_DS(on) reduces sense voltage error.

Use Scenario: Inrush-limited power delivery to hot-pluggable modules in telecom and server backplanes.

IC Role / Device Role / Timing Role: Main pass element controlled by dedicated load switch IC or discrete RC timing network.

Use Value: 100 V V_DS headroom accommodates 48 V systems with surge margin; robust SOA supports safe startup into capacitive loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR7843PbF	Lower R_DS(on) (3.1 mΩ @ 10 V), higher Q_g (42 nC), 30 V V_DS	Not suitable for 100 V bus applications; better for high-efficiency 12 V synchronous buck stages.	Select only if system V_DS ≤ 30 V and ultra-low conduction loss is prioritized over switching speed.
SiHLR110TR-GE3	Identical electrical specs and DPAK package; halogen-free, RoHS-compliant variant with same thermal and switching behavior.	No functional difference; differs only in material compliance and traceability marking.	Preferred for new designs requiring halogen-free manufacturing; drop-in replacement with identical layout and performance.

Compared with IRLR110TRPBF-BE3, the SiHLR110TR-GE3 offers identical electrical and thermal performance with updated environmental compliance, while the IRLR7843PbF trades voltage rating and switching speed for significantly lower on-resistance in low-voltage, high-current roles.

Availability

IRLR110TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and LED lighting systems requiring stable component supply across multi-year production cycles.

Supply support for IRLR110TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRLR110TRPBF-BE3 belongs to Vishay's logic-level Power MOSFET family engineered for cost-effective, rugged switching in space-constrained industrial and consumer power systems.

FAQ

What is the maximum continuous drain current for IRLR110TRPBF-BE3 at 100 °C case temperature?

The IRLR110TRPBF-BE3 supports 2.7 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the DPAK package under sustained high-temperature operation and must be verified against actual PCB layout and ambient conditions in the final design.

Does IRLR110TRPBF-BE3 require a gate resistor for stable switching?

Yes - a gate resistor (typically 10–25 Ω) is recommended for IRLR110TRPBF-BE3 to control dI/dt, suppress ringing, and prevent oscillation during turn-on/turn-off. The device's 6.1 nC Q_g and 3.3 nC Q_gd make it sensitive to parasitic inductance; proper gate resistance ensures clean edges and avoids unintended Miller turn-on.

Can IRLR110TRPBF-BE3 be used in avalanche mode repeatedly?

Yes - the IRLR110TRPBF-BE3 is explicitly rated for repetitive avalanche operation: 4.3 A I_AR and 2.5 mJ E_AR, with pulse width limited by junction temperature. This capability enables robust inductive load switching without external protection components in applications like solenoid drivers and relay interfaces.

What is the thermal resistance from junction to ambient for IRLR110TRPBF-BE3 on a standard PCB?

When mounted on a 1" square FR-4 PCB, the IRLR110TRPBF-BE3 achieves R_thJA = 50 °C/W. This value assumes recommended minimum copper pad dimensions (10.67 mm × 5.69 mm) per Vishay Application Note 826 and is critical for calculating maximum allowable power dissipation in board-level thermal design.

Is IRLR110TRPBF-BE3 pin-compatible with IRLU110PbF?

No - IRLR110TRPBF-BE3 uses the DPAK (TO-252) surface-mount package with G-D-S pinout, while IRLU110PbF uses the IPAK (TO-251) through-hole package with identical pin function but different mechanical footprint and lead configuration. PCB layout and assembly processes are not interchangeable.

IRLR110TRPBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 2.6A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.1 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRLR110TRPBF-BE3 FAQ

1.How can I place an order for IRLR110TRPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR110TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR110TRPBF-BE3 reliable?

The price and inventory of IRLR110TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR110TRPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRLR110TRPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR110TRPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR110TRPBF-BE3?

IRLR110TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR110TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR110TRPBF-BE3?

For technical support, including IRLR110TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR110TRPBF-BE3 requirements.

6.How does Aetrix verify that IRLR110TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRLR110TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR110TRPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRLR110TRPBF-BE3?

All IRLR110TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRLR110TRPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR110TRPBF-BE3 part is unused and in its original packaging.

Return procedure for IRLR110TRPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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