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Vishay Siliconix IRLR120PBF
- Part No.:
- IRLR120PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR120PBF.pdf
- Description:
- MOSFET N-CH 100V 7.7A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,197
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Product details
Overview
IRLR120PBF from Vishay Siliconix is a logic-level N-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for 100 V drain-source voltage, 7.7 A continuous drain current at TC = 25 °C, and 0.27 Ω RDS(on) at VGS = 5 V. It serves as a high-efficiency switching element in DC-DC converters, motor control stages, and load-switching circuits where low gate drive voltage and rugged avalanche capability are required.
For engineers reviewing the IRLR120PBF datasheet, IRLR120PBF pinout, IRLR120PBF application, or IRLR120PBF equivalent, key selection considerations include its logic-level gate threshold (1.0–2.0 V), repetitive avalanche rating (7.7 A, 4.2 mJ), dV/dt immunity (5.5 V/ns), PCB-mount thermal resistance (50 °C/W), and compatibility with 4–5 V microcontroller outputs without level-shifting.
Technical Context
This third-generation power MOSFET employs planar V-groove technology to achieve optimized trade-offs between conduction loss, switching speed, and ruggedness. Its dynamic dV/dt rating and unclamped inductive switching (UIS) capability enable reliable operation in hard-switched topologies with fast voltage transients.
The device integrates a low-Qgd/Qg ratio (7.1/12 nC) and low output capacitance (Coss = 150 pF), supporting efficient high-frequency switching up to several hundred kHz. Its body diode exhibits trr = 110–140 ns and Qrr = 0.80–1.0 μC under standardized conditions, suitable for synchronous rectification and freewheeling applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage in off-state; supports 48 V bus systems with 2× safety margin. |
| RDS(on) @ VGS = 5 V | 0.27 Ω - Conduction loss of ≤1.0 W at 6 A DC, enabling compact thermal design on FR-4 PCBs. |
| ID (continuous, TC = 25 °C) | 7.7 A - Sustained current handling with 42 W package power dissipation; derates linearly above 25 °C. |
| Qg (max) | 12 nC - Gate charge compatible with standard logic drivers (e.g., STM32 GPIO, PIC PWM); enables <100 ns turn-on delay. |
| EAS | 210 mJ - Single-pulse avalanche energy rating ensures robustness against inductive kickback in relay/motor drive faults. |
| TJ range | −55 to +150 °C - Wide operating junction temperature supports automotive under-hood and industrial ambient environments. |
| dV/dt rating | 5.5 V/ns - Immunity to false turn-on during fast voltage transients; eliminates need for external gate snubbers in many cases. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for automated assembly and high-current PCB routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Logic-level input (VGS(th) = 1.0–2.0 V); requires ≤12 nC total charge for full enhancement; sensitive to ESD. |
| D (Drain) | Main current output terminal | Connected to exposed copper pad on bottom of package; primary thermal path to PCB; carries full load current and avalanche energy. |
| S (Source) | Reference and return path | Common node for gate drive reference and load return; low-inductance layout critical for stable switching and dV/dt immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with 4–5 V microcontroller outputs-eliminates need for gate driver ICs in low-power switching stages. |
| Repetitive avalanche rated | Rated for 7.7 A / 4.2 mJ repetitive UIS events-enables reliable operation in inductive load switching without external clamping. |
| Dynamic dV/dt immunity | 5.5 V/ns rating prevents spurious turn-on during fast voltage transitions-reduces risk of shoot-through in half-bridge configurations. |
| Low Qgd/Qg ratio | 59 % (7.1/12 nC)-improves Miller immunity and enables faster, more controllable turn-off in hard-switched converters. |
| RoHS-compliant & halogen-free | Meets JEDEC JS709A and EU RoHS Directive 2011/65/EU-ensures compliance for global industrial and consumer product certifications. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: Step-down regulation from 24–48 V input to 3.3–12 V output in industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz with 4–5 V gate drive from controller PWM. Use Value: 0.27 Ω RDS(on) minimizes conduction loss at 5–7 A loads; low Qg enables clean edge control and reduced gate drive power. |
Use Scenario: H-bridge half-bridge leg for 12–24 V brushed motors in HVAC actuators and robotic joints. IC Role / Device Role / Timing Role: Low-side switching element controlled by MCU GPIO; handles bidirectional current and body-diode freewheeling. Use Value: Repetitive avalanche rating protects against inductive flyback during rapid direction reversal; 110 ns trr limits reverse recovery loss. |
| Hot-Swap Load Switch | LED Constant-Current Driver |
|
Use Scenario: Inrush-limited 12–24 V board-level power sequencing in telecom line cards and server backplanes. IC Role / Device Role / Timing Role: Series pass element with gate-controlled soft-start via RC ramp; blocks fault currents during hot-insertion. Use Value: Logic-level VGS(th) allows direct MCU control; 100 V rating accommodates transient surges up to ±40 V without breakdown. |
Use Scenario: Dimmable constant-current sink for high-brightness LED strings in architectural lighting and signage. IC Role / Device Role / Timing Role: PWM-controlled current regulator in low-side configuration; modulates average LED current at 1–5 kHz. Use Value: Low RDS(on) reduces power loss in series-pass topology; dV/dt immunity prevents false triggering during PWM edge transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR7843PBF | Lower RDS(on) (3.2 mΩ @ 10 V), higher Qg (42 nC), same DPAK package, 30 V VDS. | Better for high-current, low-voltage (<24 V) applications; unsuitable for 48 V bus systems due to lower breakdown rating. | Select IRLR7843PBF only when VDS ≤ 30 V and RDS(on) reduction outweighs increased gate drive demand. |
| SiHLR120-GE3 | Identical electrical specs and DPAK footprint; Vishay's newer halogen-free, lead-free variant with same 100 V/7.7 A rating. | No functional difference; preferred for RoHS 2/REACH-compliant designs requiring updated material declarations. | SiHLR120-GE3 is a drop-in replacement with identical performance and pinout-recommended for new designs requiring latest environmental compliance. |
Compared with IRLR120PBF, IRLR7843PBF offers lower conduction loss but sacrifices voltage headroom and increases gate drive burden, while SiHLR120-GE3 delivers identical electrical behavior with updated environmental compliance-making it the preferred upgrade path for production continuity.
Availability
IRLR120PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and hot-swap load switches requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.
Supply support for IRLR120PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across industrial, automotive, and computing markets.
The IRLR120PBF belongs to Vishay's third-generation logic-level power MOSFET family, engineered for high-efficiency switching in space-constrained, thermally demanding applications where low gate drive voltage and avalanche robustness are essential.
FAQ
What is the maximum continuous drain current for IRLR120PBF at 100 °C case temperature?
The IRLR120PBF supports 4.9 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package mounted on standard FR-4 PCB; actual usable current depends on heatsinking, ambient temperature, and airflow. The IRLR120PBF maintains safe operation within its SOA curve up to this limit when junction temperature remains ≤150 °C.
Does IRLR120PBF require a gate resistor for stability in switching applications?
Yes, a gate resistor (typically 5–25 Ω) is recommended for IRLR120PBF to control dI/dt, suppress ringing, and prevent parasitic oscillation-especially given its 5.5 V/ns dV/dt rating and 7.1 nC Qgd. Without proper gate resistance, the IRLR120PBF may experience unintended turn-on during high dv/dt events or exhibit overshoot in gate voltage waveforms, risking shoot-through in bridge configurations.
Can IRLR120PBF be used in avalanche mode repeatedly, and what are the limits?
Yes, the IRLR120PBF is explicitly rated for repetitive avalanche operation: 7.7 A peak current and 4.2 mJ energy per pulse, with pulse width limited by junction temperature rise. Repetitive rating assumes duty cycle ≤2 % and pulse width ≤300 μs, as defined in the datasheet. Exceeding these conditions risks cumulative thermal stress and premature failure of the IRLR120PBF.
What is the typical body diode forward voltage of IRLR120PBF at 7.7 A?
The typical body diode forward voltage (VSD) of IRLR120PBF is 2.5 V at IS = 7.7 A and TJ = 25 °C with VGS = 0 V. This value increases with junction temperature and decreases slightly at lower currents. For freewheeling applications, designers should account for this voltage drop in efficiency calculations and thermal budgeting of the IRLR120PBF.
Is IRLR120PBF pin-compatible with IRLU120PbF?
No, IRLR120PBF is not pin-compatible with IRLU120PbF. While both share identical die and electrical specifications, IRLR120PBF uses the DPAK (TO-252) surface-mount package with G-D-S pinout, whereas IRLU120PbF uses the IPAK (TO-251) through-hole package with straight leads and different mechanical footprint. PCB layout and assembly processes differ significantly between the two packages.
IRLR120PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 4.6A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRLR120PBF FAQ
1.How can I place an order for IRLR120PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR120PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR120PBF reliable?
The price and inventory of IRLR120PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR120PBF is usually 5 days.
3.What payment methods are accepted for IRLR120PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR120PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR120PBF?
IRLR120PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR120PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR120PBF?
For technical support, including IRLR120PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR120PBF requirements.
6.How does Aetrix verify that IRLR120PBF is sourced from the original manufacturer or authorized distributors?
All IRLR120PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR120PBF meets industry standards.
7.What is the process for return or replacement of IRLR120PBF?
All IRLR120PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR120PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR120PBF part is unused and in its original packaging.
Return procedure for IRLR120PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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