Vishay Siliconix IRLR120TRL
- Part No.:
- IRLR120TRL
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR120TRL.pdf
- Description:
- MOSFET N-CH 100V 7.7A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:6,530
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Product details
Overview
IRLR120TRL from Vishay Siliconix is a logic-level N-channel power MOSFET in DPAK (TO-252) surface-mount package, rated for 100 V VDS, 7.7 A continuous drain current at TC = 25 °C, and 0.27 Ω RDS(on) at VGS = 5.0 V. It supports fast switching in DC-DC converters and motor control circuits with repetitive avalanche capability and dynamic dV/dt rating up to 5.5 V/ns.
For engineers reviewing the IRLR120TRL datasheet, IRLR120TRL pinout, IRLR120TRL application, or IRLR120TRL equivalent, this part is selected for high-efficiency, surface-mount power switching where low gate drive voltage (4–5 V), rugged unclamped inductive switching, and PCB-mount thermal performance (RthJA = 50 °C/W) are critical design requirements.
Technical Context
This MOSFET uses third-generation trench-gate silicon technology optimized for low RDS(on) and fast switching with integrated body diode recovery time (trr = 110–140 ns) and low reverse recovery charge (Qrr = 0.80–1.0 μC). Its gate threshold voltage (VGS(th) = 1.0–2.0 V) enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting.
The device features a specified linear derating factor of 0.33 W/°C above 25 °C case temperature and supports unclamped inductive switching with EAS = 210 mJ (single-pulse) and IAR = 7.7 A (repetitive), validated under defined test conditions (L = 5.3 mH, Rg = 25 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for use in 48 V bus systems and flyback primary switches. |
| RDS(on) @ VGS = 5 V | 0.27 Ω - Enables <1.5 W conduction loss at 4.6 A DC, suitable for compact thermally constrained layouts. |
| Qg | 12 nC - Low total gate charge reduces driver power demand and supports >100 kHz PWM operation. |
| tr/tf | 64 ns / 27 ns - Fast edge rates minimize switching losses in hard-switched topologies. |
| ID (continuous, TC = 25 °C) | 7.7 A - Sustains full load in 1" FR-4 PCB mount without heatsink under typical ambient conditions. |
| EAS | 210 mJ - Withstands single-event inductive energy spikes in relay drivers and solenoid controls. |
| RthJA (PCB mount) | 50 °C/W - Validated on 1" square FR-4 board; defines thermal design margin for surface-mount power stages. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S) with standard leadframe layout per JEDEC outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 4–5 V logic-level drive; VGS(th) = 1.0–2.0 V ensures turn-on with microcontroller GPIO. |
| D (Drain) | High-side power terminal | Connected to exposed copper pad on bottom of package; primary heat path and high-voltage node. |
| S (Source) | Reference and return path | Common reference for gate drive and load current; ties to ground or low-side switch node. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.0 V (RDS(on) = 0.38 Ω), eliminating need for gate driver ICs in 3.3 V/5 V systems. |
| Repetitive avalanche rated | Rated for 7.7 A IAR and 4.2 mJ EAR under defined pulse conditions-supports robustness in inductive load switching. |
| Dynamic dV/dt immunity | 5.5 V/ns rating prevents false turn-on during high-speed voltage transients in half-bridge and synchronous rectifier applications. |
| Low Qgd/Qg ratio | Qgd = 7.1 nC of total Qg = 12 nC - improves Miller immunity and enables stable high-frequency operation. |
| Surface-mount DPAK | TO-252 footprint with thermal pad - compatible with vapor-phase and IR reflow; supports >2.5 W power dissipation on standard PCB. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Driver (Half-Bridge) |
|---|---|
|
Use Scenario: High-efficiency 48 V input buck converter operating at 200 kHz with synchronous rectification. IC Role / Device Role / Timing Role: Main high-side switching element controlling energy transfer into output inductor. Use Value: Low RDS(on) (0.27 Ω) and fast tr/tf reduce conduction and switching losses; logic-level gate enables direct MCU control. |
Use Scenario: 24 V battery-powered robotic actuator using H-bridge topology with PWM speed control. IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, commutating motor current through body diode during freewheeling. Use Value: Fast body diode recovery (trr = 110 ns) and low Qrr (0.80 μC) minimize shoot-through risk and freewheeling losses. |
| LED Constant-Current Driver | Industrial Solenoid/Valve Controller |
|
Use Scenario: Constant-current LED string driver with analog dimming via gate voltage modulation. IC Role / Device Role / Timing Role: Adjustable current sink regulating LED current through source degeneration resistor. Use Value: Tight VGS(th) tolerance (1.0–2.0 V) and low gfs variation enable stable analog current regulation across temperature. |
Use Scenario: 24 V industrial PLC output module driving 12 W solenoid valves with inductive kick suppression. IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy during turn-off via avalanche breakdown. Use Value: Rated EAS = 210 mJ and repetitive avalanche capability eliminate need for external snubbers in cost-sensitive valve drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR7843PbF | Lower RDS(on) (0.0095 Ω @ 10 V), higher Qg (42 nC), 40 V VDS | Not suitable for 48–100 V bus applications; requires higher gate drive voltage for optimal RDS(on). | Select when lower conduction loss at ≤40 V and higher current (>30 A) are prioritized over voltage rating and gate drive simplicity. |
| SiHLR120-GE3 | Identical die and RDS(on)/Qg/avalanche specs; halogen-free, same DPAK package | No functional difference; differs only in material compliance (halogen-free vs. Pb-free only) | Choose SiHLR120-GE3 for RoHS+halogen-free compliance mandates; electrically interchangeable with IRLR120TRL in all designs. |
Compared with IRLR120TRL, IRLR7843PbF trades voltage capability and gate-drive simplicity for ultra-low RDS(on) at lower voltages, while SiHLR120-GE3 offers identical electrical performance with enhanced environmental compliance-neither is pin-compatible by JEDEC definition but shares identical DPAK mechanical footprint and thermal pad layout.
Availability
IRLR120TRL is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED drivers, and industrial solenoid controllers requiring stable component supply and long-term production continuity.
Supply support for IRLR120TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRLR120TRL belongs to Vishay's third-generation logic-level power MOSFET family, engineered for high-efficiency, surface-mount switching in space-constrained power conversion and load-control applications.
FAQ
What is the maximum continuous drain current for IRLR120TRL at 100 °C case temperature?
The IRLR120TRL supports 4.9 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.33 W/°C and 42 W PD rating at 25 °C. This value is confirmed in the Absolute Maximum Ratings table and applies under proper PCB thermal management per the 1" FR-4 mounting condition.
Does IRLR120TRL require a gate driver IC when used with a 3.3 V microcontroller?
No, the IRLR120TRL does not require an external gate driver IC with a 3.3 V microcontroller. Its VGS(th) range (1.0–2.0 V) and RDS(on) = 0.38 Ω at VGS = 4.0 V ensure full enhancement and low conduction loss using direct GPIO drive-verified in the Specifications table under static parameters.
What is the thermal resistance from junction to ambient for IRLR120TRL mounted on a standard PCB?
When mounted on a 1" square FR-4 PCB, the IRLR120TRL has a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W, as specified in the Thermal Resistance Ratings table. This value assumes no additional heatsink and defines the worst-case thermal rise for PCB-only cooling.
Can IRLR120TRL be used in avalanche mode for inductive load switching without external protection?
Yes, the IRLR120TRL is explicitly repetitive avalanche rated (IAR = 7.7 A, EAR = 4.2 mJ) and single-pulse avalanche rated (EAS = 210 mJ), enabling reliable unclamped inductive switching in solenoid and relay drivers without snubber circuits-per test conditions in Note b of Absolute Maximum Ratings.
What is the body diode reverse recovery time (trr) of IRLR120TRL and why does it matter?
The IRLR120TRL body diode reverse recovery time is 110–140 ns at TJ = 25 °C, IF = 9.2 A, and dI/dt = 100 A/μs. This parameter directly impacts efficiency and EMI in synchronous rectification and freewheeling paths-shorter trr reduces switching loss and voltage overshoot during diode commutation.
IRLR120TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 4.6A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRLR120TRL FAQ
1.How can I place an order for IRLR120TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR120TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR120TRL reliable?
The price and inventory of IRLR120TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR120TRL is usually 5 days.
3.What payment methods are accepted for IRLR120TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR120TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR120TRL?
IRLR120TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR120TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR120TRL?
For technical support, including IRLR120TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR120TRL requirements.
6.How does Aetrix verify that IRLR120TRL is sourced from the original manufacturer or authorized distributors?
All IRLR120TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR120TRL meets industry standards.
7.What is the process for return or replacement of IRLR120TRL?
All IRLR120TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRLR120TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR120TRL part is unused and in its original packaging.
Return procedure for IRLR120TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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