Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLR120TRLPBF

Name: IRLR120TRLPBF
Brand: Vishay Siliconix
SKU: IRLR120TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLR120TRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR120TRLPBF.pdf

Description:: MOSFET N-CH 100V 7.7A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,788

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLR120TRLPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in DPAK (TO-252) surface-mount package, rated for 100 V V_DS, 7.7 A continuous drain current at T_C = 25 °C, and 0.27 Ω R_DS(on) at V_GS = 5.0 V. It delivers rugged unclamped inductive switching with 210 mJ single-pulse avalanche energy and supports high-efficiency DC-DC converters and motor control circuits.

For engineers reviewing the IRLR120TRLPBF datasheet, IRLR120TRLPBF pinout, IRLR120TRLPBF application, or IRLR120TRLPBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V, repetitive avalanche rating, and thermal performance on FR-4 PCBs.

Technical Context

This MOSFET employs third-generation trench-gate silicon technology optimized for fast switching and low conduction loss. Its dynamic dV/dt rating of 5.5 V/ns and body diode reverse recovery time of 110–140 ns support robust operation in hard-switched topologies.

The device integrates a monolithic body diode with 2.5 V forward voltage at 7.7 A and 7.5 nH internal source inductance, enabling predictable turn-off behavior in synchronous rectification and H-bridge configurations without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports input rails up to 80 V DC with margin for transients in industrial power supplies.
R_DS(on) @ V_GS = 5 V	0.27 Ω - Enables ≤1.0 W conduction loss at 6 A, suitable for thermally constrained SMT layouts.
Q_g	12 nC - Low gate charge allows efficient driving from microcontroller GPIO or low-power gate drivers.
I_D (continuous, T_C = 25 °C)	7.7 A - Delivers full-rated current with heatsinking via PCB copper pour per recommended DPAK pad layout.
E_AS	210 mJ - Withstands unclamped inductive energy spikes in relay drivers and solenoid controls without failure.
T_J range	–55 to +150 °C - Qualified for extended temperature operation in automotive under-hood and industrial motor drives.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain tab for thermal conduction and mechanical anchoring. Dimensions per JEDEC outline: 6.09 × 6.54 × 2.29 mm (L × W × H), thermal pad area 4.10 × 4.32 mm.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts logic-level 4–5 V drive; threshold voltage 1.0–2.0 V ensures reliable turn-on with 3.3 V MCU outputs.
D (Drain)	High-side power switch node	Exposed metal tab connected internally to drain; must be soldered to large copper pour for thermal management and EMI reduction.
S (Source)	Reference/return path	Provides low-inductance return for load current; internal source inductance 7.5 nH affects switching waveform fidelity.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with V_GS ≥ 4.0 V, eliminating need for level-shifting circuitry in 3.3 V/5 V control systems.
Repetitive avalanche rated	Rated for 7.7 A repetitive avalanche current and 4.2 mJ energy, enabling reliable operation in inductive load switching without external clamping.
Dynamic dV/dt immunity	5.5 V/ns rating prevents false turn-on during high-slew-rate voltage transients in motor phase legs and SMPS primary switches.
Low Q_gd/Q_g ratio	Q_gd = 7.1 nC / Q_g = 12 nC = 59 % - Reduces Miller plateau duration and improves controllability during hard switching.

Applications

Brushless DC Motor Driver	Industrial DC-DC Converter
Use Scenario: Half-bridge leg in 24–48 V BLDC inverter for HVAC blowers and power tools. IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f = 27 ns) and low R_DS(on) to minimize conduction losses and thermal stress. Use Value: Logic-level gate enables direct PWM control from ARM Cortex-M0+ MCUs; 210 mJ E_AS withstands commutation-induced inductive kickback.	Use Scenario: Synchronous rectifier in isolated 48 V-to-12 V flyback or active-clamp forward converter. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce forward drop and improve efficiency above 5 A load. Use Value: 0.27 Ω R_DS(on) at 5 V gate drive cuts conduction loss by >60 % vs. 40 V Schottky; body diode t_rr = 110 ns minimizes reverse recovery loss.
Automotive LED Headlamp Driver	Programmable Load Switch
Use Scenario: High-side current sink for adaptive front-lighting matrix modules requiring precise dimming and short-circuit protection. IC Role / Device Role / Timing Role: Constant-current switch controlled by PWM dimming signal; avalanche rating handles inductive surge during lamp hot-plug events. Use Value: 100 V V_DS accommodates 12 V automotive transients (ISO 7637-2 Pulse 1/2a); R_DS(on) stability over –40 to +150 °C ensures consistent brightness calibration.	Use Scenario: Hot-swap power controller for FPGA I/O banks or USB-C PD sink applications requiring inrush limiting and fault isolation. IC Role / Device Role / Timing Role: Main pass transistor with integrated body diode used for reverse-current blocking and soft-start control via gate slew rate. Use Value: 7.7 A continuous rating supports 5–6 A loads; low Q_g = 12 nC enables precise gate voltage ramping using RC networks for <10 ms inrush control.

Brushless DC Motor Driver

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC inverter for HVAC blowers and power tools.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f = 27 ns) and low R_DS(on) to minimize conduction losses and thermal stress.

Use Value: Logic-level gate enables direct PWM control from ARM Cortex-M0+ MCUs; 210 mJ E_AS withstands commutation-induced inductive kickback.

Use Scenario: Synchronous rectifier in isolated 48 V-to-12 V flyback or active-clamp forward converter.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce forward drop and improve efficiency above 5 A load.

Use Value: 0.27 Ω R_DS(on) at 5 V gate drive cuts conduction loss by >60 % vs. 40 V Schottky; body diode t_rr = 110 ns minimizes reverse recovery loss.

Automotive LED Headlamp Driver

Programmable Load Switch

Use Scenario: High-side current sink for adaptive front-lighting matrix modules requiring precise dimming and short-circuit protection.

IC Role / Device Role / Timing Role: Constant-current switch controlled by PWM dimming signal; avalanche rating handles inductive surge during lamp hot-plug events.

Use Value: 100 V V_DS accommodates 12 V automotive transients (ISO 7637-2 Pulse 1/2a); R_DS(on) stability over –40 to +150 °C ensures consistent brightness calibration.

Use Scenario: Hot-swap power controller for FPGA I/O banks or USB-C PD sink applications requiring inrush limiting and fault isolation.

IC Role / Device Role / Timing Role: Main pass transistor with integrated body diode used for reverse-current blocking and soft-start control via gate slew rate.

Use Value: 7.7 A continuous rating supports 5–6 A loads; low Q_g = 12 nC enables precise gate voltage ramping using RC networks for <10 ms inrush control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR7843PBF	Lower R_DS(on) (3.2 mΩ @ 10 V), higher Q_g (51 nC), 40 V V_DS	Not suitable for 100 V bus applications; better for 12–24 V high-current sync rectifiers.	Select only if system V_DS ≤ 40 V and gate drive can supply >1 A peak current.
SiHLR120-GE3	Same die, identical R_DS(on), Q_g, and avalanche specs; halogen-free, RoHS-compliant variant.	No functional difference; preferred for new designs requiring JEDEC JS709A compliance.	Drop-in replacement with identical electrical and thermal behavior; no layout or firmware changes required.

Compared with IRLR120TRLPBF, IRLLR7843PBF trades voltage rating for lower on-resistance in low-voltage systems, while SiHLR120-GE3 offers identical performance with updated environmental compliance-making it the preferred choice for new production where halogen-free materials are mandated.

Availability

IRLR120TRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, automotive lighting controllers, and programmable power distribution systems requiring stable component supply across multi-year production cycles.

Supply support for IRLR120TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-volume manufacturability.

The IRLR120TRLPBF belongs to Vishay's third-generation logic-level power MOSFET family, engineered specifically for high-efficiency, space-constrained switching applications in automotive, industrial, and consumer power electronics.

FAQ

What is the maximum continuous drain current for IRLR120TRLPBF at 100 °C case temperature?

The IRLR120TRLPBF supports 4.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package mounted on standard FR-4 PCB; actual current capability depends on copper area, airflow, and ambient temperature. The IRLR120TRLPBF maintains stable R_DS(on) up to 150 °C junction temperature.

Does IRLR120TRLPBF require a gate resistor for safe operation?

A gate resistor is recommended for IRLR120TRLPBF to control dI/dt and suppress ringing, especially in high-frequency switching applications. While not strictly required for DC operation, a 5–25 Ω resistor between driver and gate limits peak gate current, reduces EMI, and prevents oscillation due to PCB trace inductance. The IRLR120TRLPBF gate charge of 12 nC makes it sensitive to fast edge rates without proper damping.

Can IRLR120TRLPBF be used in avalanche mode repeatedly?

Yes, IRLR120TRLPBF is explicitly rated for repetitive avalanche operation: 7.7 A repetitive avalanche current and 4.2 mJ repetitive avalanche energy at T_J ≤ 150 °C. This capability is validated per test condition b in the datasheet (V_DD = 25 V, L = 5.3 mH, R_g = 25 Ω). The IRLR120TRLPBF does not require external avalanche clamping in properly designed inductive switching circuits.

What is the body diode forward voltage of IRLR120TRLPBF at 7.7 A?

The body diode forward voltage (V_SD) of IRLR120TRLPBF is 2.5 V maximum at T_J = 25 °C and I_S = 7.7 A with V_GS = 0 V. This value increases with junction temperature and decreases slightly at lower currents. The IRLR120TRLPBF body diode exhibits 110–140 ns reverse recovery time, making it suitable for moderate-frequency freewheeling but not ultra-high-frequency synchronous rectification without careful layout.

Is IRLR120TRLPBF compatible with lead-free reflow soldering processes?

Yes, IRLR120TRLPBF is qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, per JEDEC J-STD-020. The device uses matte tin plating and meets RoHS Directive 2011/65/EU requirements. The IRLR120TRLPBF DPAK package is compatible with vapor phase, infrared, and wave soldering; recommended minimum pad dimensions are provided in Vishay Application Note 826.

IRLR120TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 4.6A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRLR120TRLPBF FAQ

1.How can I place an order for IRLR120TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR120TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR120TRLPBF reliable?

The price and inventory of IRLR120TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR120TRLPBF is usually 5 days.

3.What payment methods are accepted for IRLR120TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR120TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR120TRLPBF?

IRLR120TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR120TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR120TRLPBF?

For technical support, including IRLR120TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR120TRLPBF requirements.

6.How does Aetrix verify that IRLR120TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRLR120TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR120TRLPBF meets industry standards.

7.What is the process for return or replacement of IRLR120TRLPBF?

All IRLR120TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR120TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR120TRLPBF part is unused and in its original packaging.

Return procedure for IRLR120TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …