Vishay Siliconix IRLR120TRPBF

Overview

IRLR120TRPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in DPAK (TO-252) surface-mount package, rated for 100 V drain-source voltage, 7.7 A continuous drain current at T_C = 25 °C, and 0.27 Ω R_DS(on) at V_GS = 5 V. It supports fast switching in DC-DC converters and motor control circuits with repetitive avalanche rating and dynamic dV/dt capability.

For engineers reviewing the IRLR120TRPBF datasheet, IRLR120TRPBF pinout, IRLR120TRPBF application, or IRLR120TRPBF equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low on-resistance at 4 V gate drive (0.38 Ω), 12 nC total gate charge, and ruggedized avalanche performance (E_AS = 210 mJ).

Technical Context

This MOSFET uses third-generation trench-gate silicon technology optimized for high-efficiency switching in medium-voltage power stages. Its design integrates a low-inductance DPAK package with internal source/drain inductances of 7.5 nH and 4.5 nH, enabling clean turn-on/turn-off waveforms under 9.2 A load conditions.

The device features a built-in body diode with 110–140 ns reverse recovery time and 0.80–1.0 μC Q_rr, supporting synchronous rectification and flyback operation. Thermal resistance is specified at R_thJC = 3.0 °C/W (junction-to-case) and R_thJA = 50 °C/W (PCB mount), confirming suitability for compact board-level thermal management.

Key Specifications

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Dimensions per JEDEC outline: 6.22 mm × 6.73 mm × 2.38 mm (L × W × H), with 2.28 mm lead pitch and 4.56 mm center-to-center gate-source spacing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IRLR7843TRPBF and STP16NF10, the IRLR120TRPBF offers the best balance of logic-level compatibility, moderate gate charge, and rugged avalanche performance in surface-mount form-making it ideal for space-constrained, medium-current industrial switching where reliability under inductive stress is critical.

Availability

IRLR120TRPBF is available at Aetrix Electronics and suitable for brushless DC motor control, DC-DC synchronous buck converters, LED driver power stages, and industrial solenoid drivers requiring stable component supply across production lifecycles.

Supply support for IRLR120TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRLR120TRPBF belongs to Vishay's third-generation logic-level power MOSFET family, engineered for high-efficiency switching in industrial, automotive, and consumer power systems where low gate drive voltage and avalanche tolerance are essential.

FAQ

What is the maximum continuous drain current for IRLR120TRPBF at 100 °C case temperature?

The IRLR120TRPBF supports 4.9 A continuous drain current at T_C = 100 °C, based on its linear derating factor of 0.33 W/°C from the 42 W maximum power dissipation at 25 °C. This value assumes proper PCB copper area per Vishay's recommended DPAK pad layout (1"² FR-4). The IRLR120TRPBF must be mounted with thermal vias under the drain pad to sustain this current reliably.

Does IRLR120TRPBF have a specified body diode reverse recovery time?

Yes, the IRLR120TRPBF specifies a body diode reverse recovery time (t_rr) of 110–140 ns at T_J = 25 °C, I_F = 9.2 A, and dI/dt = 100 A/μs. This parameter is measured with the gate shorted to source and reflects the diode's ability to transition from conduction to blocking state. The IRLR120TRPBF's t_rr enables use in synchronous rectification without excessive switching loss.

Can IRLR120TRPBF be driven directly by a 3.3 V microcontroller GPIO?

Yes, the IRLR120TRPBF can be driven directly by a 3.3 V microcontroller GPIO because its gate threshold voltage (V_GS(th)) is specified from 1.0 V to 2.0 V, and it achieves R_DS(on) = 0.38 Ω at V_GS = 4.0 V. At 3.3 V, the device operates in enhancement mode with usable, though not fully optimized, on-resistance. For minimal conduction loss, ensure the IRLR120TRPBF gate is pulled fully to 0 V during off-state using a dedicated pull-down resistor.

What is the thermal resistance from junction to ambient for IRLR120TRPBF on a standard PCB?

The IRLR120TRPBF has a maximum junction-to-ambient thermal resistance (R_thJA) of 50 °C/W when mounted on a 1" square PCB (FR-4 or G-10 material), per Vishay's test condition. This value assumes the recommended minimum pad layout with thermal vias under the drain pad. Without adequate copper area or thermal vias, R_thJA may exceed 110 °C/W, risking thermal runaway at full load. Always verify thermal performance using the IRLR120TRPBF's actual power dissipation profile.

Is IRLR120TRPBF rated for repetitive avalanche operation?

Yes, the IRLR120TRPBF is explicitly rated for repetitive avalanche operation, with I_AR = 7.7 A and E_AR = 4.2 mJ under defined pulse conditions (pulse width ≤ 300 μs, duty cycle ≤ 2 %). This rating confirms its suitability for inductive switching applications such as motor drives and solenoid control where unclamped inductive energy must be absorbed repeatedly. The IRLR120TRPBF's avalanche capability eliminates the need for external clamping diodes in many designs.