Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLU110

Name: IRLU110
Brand: Vishay Siliconix
SKU: IRLU110
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLU110

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU110.pdf

Description:: MOSFET N-CH 100V 4.3A TO251AA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,358

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLU110 from Vishay Siliconix is a 100 V, 4.3 A N-channel power MOSFET in straight-lead IPAK (TO-251) package, optimized for through-hole mounting with logic-level gate drive (V_GS(th) = 1.0–2.0 V), R_DS(on) = 0.54 Ω at V_GS = 5 V, and repetitive avalanche rating (I_AR = 4.3 A). It serves as a robust switching element in DC-DC converters, motor drivers, and industrial power supplies.

For engineers reviewing the IRLU110 datasheet, IRLU110 pinout, IRLU110 application, or IRLU110 equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics (t_rr = 100–130 ns), and through-hole PCB layout guidance per Vishay's recommended pad dimensions for TO-251.

Technical Context

The IRLU110 employs third-generation TrenchFET® technology to achieve low R_DS(on) and fast switching (t_d(on) = 9.3 ns, t_r = 47 ns) while maintaining ruggedness via dynamic dV/dt rating (5.5 V/ns) and unclamped inductive switching capability (E_AS = 100 mJ).

Its logic-level gate enables direct drive from microcontrollers or PWM controllers without level-shifting, and its integrated body diode supports freewheeling in flyback and synchronous rectifier topologies with Q_rr = 0.50–0.65 μC and V_SD = 2.5 V at I_S = 4.3 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports input rails up to 80 V DC with margin for voltage transients in industrial power stages.
R_DS(on) @ V_GS = 5 V	0.54 Ω - Enables ≤2.3 W conduction loss at 4.3 A continuous drain current (T_C = 25 °C).
Q_g	6.1 nC - Determines gate drive power requirement; compatible with low-current logic drivers (e.g., STM32 GPIO).
I_D (continuous)	4.3 A @ T_C = 25 °C - Sustains full load in compact through-hole designs with adequate heatsinking.
t_rr	100–130 ns - Limits reverse recovery losses in hard-switched converters operating below 100 kHz.
R_thJA (PCB mount)	50 °C/W - Defines thermal rise on 1" FR-4 board; requires ≥2.5 cm² copper pour for 2.5 W dissipation at T_A = 25 °C.
E_AS	100 mJ - Allows safe operation under unclamped inductive switching events (e.g., relay coil snubbing).

Pinout & Package

IRLU110 uses the IPAK (TO-251) straight-lead package for through-hole mounting. The package features a thermally enhanced drain-connected tab and three leads: Gate (G), Drain (D), Source (S). Lead spacing and bend geometry comply with JEDEC TO-251AA outline (Document 91362, Rev. C).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts logic-level signals (0–5 V); requires ≤6.1 nC charge for full enhancement; gate leakage < ±100 nA.
D	Drain connection	High-side switch node; electrically connected to exposed thermal pad; must be isolated from other nets on PCB.
S	Source reference	Return path for load current; ties to ground or low-side switch; body diode anode connects internally to S.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.0–2.0 V enables direct interface with 3.3 V/5 V MCUs without gate driver ICs.
Repetitive avalanche rated	Rated for I_AR = 4.3 A and E_EAR = 2.5 mJ, supporting reliable operation under transient overloads.
Dynamic dV/dt immunity	5.5 V/ns rating prevents false turn-on during high-slew-rate voltage transients in noisy industrial environments.
Low Q_gd/Q_g ratio	Q_gd = 3.3 nC / Q_g = 6.1 nC = 54% - improves Miller immunity and hard-switching robustness.
Body diode with low Q_rr	Q_rr = 0.50–0.65 μC reduces switching losses in asynchronous rectification and flyback applications.

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: Step-down regulation from 24 V to 5 V/3.3 V in programmable logic controllers (PLCs) with 2 A output. IC Role / Device Role / Timing Role: Low-side synchronous switch; operates at 50–100 kHz with gate driven by PWM controller. Use Value: R_DS(on) = 0.54 Ω limits conduction loss to <0.5 W at 2 A, while t_rr <130 ns minimizes shoot-through risk during dead-time.	Use Scenario: H-bridge half-bridge leg driving 12 V, 3 A brushed motor in HVAC damper actuators. IC Role / Device Role / Timing Role: High-side or low-side power switch; commutated at ≤20 kHz with freewheeling via internal body diode. Use Value: Repetitive avalanche rating (I_AR = 4.3 A) withstands inductive kickback during rapid direction reversal.
Industrial Power Supply OR-ing	AC-DC Auxiliary Supply
Use Scenario: Redundant 24 V input OR-ing in DIN-rail mounted power supplies using discrete MOSFETs. IC Role / Device Role / Timing Role: Ideal diode replacement; biased in linear region for low forward drop during conduction. Use Value: V_GS(th) = 1.0–2.0 V allows precise gate control to maintain V_DS < 0.1 V, reducing heat vs. Schottky diodes.	Use Scenario: 12 V auxiliary rail derived from main AC-DC converter output in industrial HMIs. IC Role / Device Role / Timing Role: Linear regulator pass device or low-frequency switching transistor in flyback snubber/clamp circuits. Use Value: E_AS = 100 mJ safely absorbs leakage energy from transformer windings without external TVS.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 24 V to 5 V/3.3 V in programmable logic controllers (PLCs) with 2 A output.

IC Role / Device Role / Timing Role: Low-side synchronous switch; operates at 50–100 kHz with gate driven by PWM controller.

Use Value: R_DS(on) = 0.54 Ω limits conduction loss to <0.5 W at 2 A, while t_rr <130 ns minimizes shoot-through risk during dead-time.

Use Scenario: H-bridge half-bridge leg driving 12 V, 3 A brushed motor in HVAC damper actuators.

IC Role / Device Role / Timing Role: High-side or low-side power switch; commutated at ≤20 kHz with freewheeling via internal body diode.

Use Value: Repetitive avalanche rating (I_AR = 4.3 A) withstands inductive kickback during rapid direction reversal.

Industrial Power Supply OR-ing

AC-DC Auxiliary Supply

Use Scenario: Redundant 24 V input OR-ing in DIN-rail mounted power supplies using discrete MOSFETs.

IC Role / Device Role / Timing Role: Ideal diode replacement; biased in linear region for low forward drop during conduction.

Use Value: V_GS(th) = 1.0–2.0 V allows precise gate control to maintain V_DS < 0.1 V, reducing heat vs. Schottky diodes.

Use Scenario: 12 V auxiliary rail derived from main AC-DC converter output in industrial HMIs.

IC Role / Device Role / Timing Role: Linear regulator pass device or low-frequency switching transistor in flyback snubber/clamp circuits.

Use Value: E_AS = 100 mJ safely absorbs leakage energy from transformer windings without external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR110PbF	Same die, DPAK (TO-252) surface-mount package; R_thJC = 5.0 °C/W identical, but R_thJA = 110 °C/W (vs. 50 °C/W for IRLU110 on PCB).	Requires reflow-compatible layout; unsuitable for through-hole assembly or manual prototyping.	Select IRLR110PbF only when automated SMT production and space-constrained layouts are prioritized.
STP12NK100Z	1000 V rating, higher R_DS(on) = 0.9 Ω @ 10 V, no logic-level gate (V_GS(th) = 3–5 V); Q_g = 45 nC.	Targeted at high-voltage PFC and offline SMPS; incompatible with 3.3 V MCU drive without gate driver.	Choose STP12NK100Z only for >400 V AC-input applications where IRLU110's 100 V rating is insufficient.

Compared with IRLR110PbF, IRLU110 offers superior thermal performance in PCB-mounted configurations (50 vs. 110 °C/W R_thJA) and mechanical robustness for hand-soldered prototypes; versus STP12NK100Z, IRLU110 delivers lower gate drive complexity and conduction loss in sub-24 V systems but lacks high-voltage capability.

Availability

IRLU110 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC conversion, and power supply OR-ing requiring stable component supply across long-lifecycle embedded programs.

Supply support for IRLU110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRLU110 belongs to Vishay's logic-level TrenchFET® family, engineered for cost-sensitive, high-volume industrial and consumer power switching where simplicity of gate drive and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current for IRLU110 at 100 °C case temperature?

The IRLU110 supports 2.7 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-251 package and ensures junction temperature remains ≤150 °C. At T_C = 25 °C, IRLU110 sustains 4.3 A continuously. Designers must verify PCB copper area and ambient conditions to maintain safe operating temperatures.

Does IRLU110 have a specified body diode reverse recovery time (t_rr)?

Yes, IRLU110 specifies t_rr = 100–130 ns at T_J = 25 °C, I_F = 5.6 A, and dI/dt = 100 A/μs. This parameter is critical for estimating switching losses in flyback and buck-boost converters where the body diode conducts during dead time. The associated Q_rr is 0.50–0.65 μC, directly influencing peak current stress on the complementary switch.

Can IRLU110 be driven directly from a 3.3 V microcontroller GPIO?

Yes, IRLU110 is a logic-level MOSFET with V_GS(th) = 1.0–2.0 V and R_DS(on) fully characterized at V_GS = 4 V and 5 V. At 3.3 V, it achieves partial enhancement (R_DS(on) increases to ~0.85 Ω), sufficient for low-duty-cycle or low-current applications. For full 4.3 A capability and minimal conduction loss, 5 V drive is recommended.

What is the thermal resistance from junction to ambient (R_thJA) for IRLU110 in typical PCB mounting?

For IRLU110 mounted on a 1" square FR-4 PCB, R_thJA = 50 °C/W. This value assumes standard JEDEC test conditions and defines the temperature rise per watt of power dissipated. To sustain 2.5 W (its maximum PCB-mount power rating), ambient temperature must remain ≤25 °C, or additional copper area/heatsinking must be added to reduce thermal resistance.

Is IRLU110 rated for avalanche energy, and what does that mean for circuit design?

Yes, IRLU110 is repetitively avalanche rated with E_EAR = 2.5 mJ and I_AR = 4.3 A. This means it can safely absorb inductive energy spikes-such as those from relay coils or motor windings-without failure, provided pulse width and duty cycle stay within limits defined in Figure 11 of the datasheet. Designers may omit external snubbers in moderate-energy switching nodes.

IRLU110 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 2.6A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.1 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

IRLU110 FAQ

1.How can I place an order for IRLU110 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU110 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU110 reliable?

The price and inventory of IRLU110 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU110 is usually 5 days.

3.What payment methods are accepted for IRLU110?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU110 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU110?

IRLU110 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU110 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU110?

For technical support, including IRLU110 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU110 requirements.

6.How does Aetrix verify that IRLU110 is sourced from the original manufacturer or authorized distributors?

All IRLU110 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU110 meets industry standards.

7.What is the process for return or replacement of IRLU110?

All IRLU110 units undergo pre-shipment inspection (PSI). If there is an issue with IRLU110, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU110 part is unused and in its original packaging.

Return procedure for IRLU110:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …