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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLZ14PBF-BE3

Name: IRLZ14PBF-BE3
Brand: Vishay Siliconix
SKU: IRLZ14PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ14PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRLZ14PBF-BE3.pdf

Description:: MOSFET N-CH 60V 10A TO220AB

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Product details

Overview

IRLZ14PBF-BE3 from Vishay Siliconix is a logic-level N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 60 V V_DS, 10 A continuous drain current at T_C = 25 °C, and 0.20 Ω R_DS(on) at V_GS = 5 V. It operates up to 175 °C junction temperature and supports fast switching in DC-DC converters, motor drives, and load switching applications.

For engineers reviewing the IRLZ14PBF-BE3 datasheet, IRLZ14PBF-BE3 pinout, IRLZ14PBF-BE3 application, or IRLZ14PBF-BE3 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V, avalanche energy rating (E_AS = 39.5 mJ), and TO-220AB thermal performance (R_thJC = 3.5 °C/W).

Technical Context

This MOSFET uses third-generation planar silicon technology optimized for ruggedness and low conduction loss. Its gate threshold voltage (1.0–2.0 V) ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs, and its dynamic dV/dt rating (4.5 V/ns) supports stable operation in noisy inductive switching environments.

The device integrates a fast-recovery body diode (t_rr = 93–130 ns, Q_rr = 0.34–0.65 μC) and features low gate charge (Q_g = 8.4 nC, Q_gd = 6.0 nC), enabling efficient high-frequency switching with minimal driver loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage for 24–48 V system-level DC bus protection and switching
R_DS(on) @ V_GS = 5 V	0.20 Ω - enables ≤2 W conduction loss at 10 A, suitable for thermally constrained PCB layouts
Q_g	8.4 nC - determines gate driver current requirement (~1.4 mA avg. for 100 kHz, 12 V drive)
T_J max	175 °C - supports operation in sealed enclosures or high-ambient industrial environments
E_AS	39.5 mJ - withstands unclamped inductive energy during fault conditions without failure
dV/dt rating	4.5 V/ns - resists false turn-on from parasitic coupling in motor drive half-bridges
I_D pulsed	40 A - supports short-duration surge currents in solenoid or lamp inrush control

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.1 N·m screw torque rating, and 3.5 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Logic-level compatible; requires ≤2.0 V to turn on, driven directly by MCU GPIO or low-voltage gate driver
D (Drain)	High-side or low-side switch node	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to same potential
S (Source)	Reference terminal / current return path	Common connection point for gate drive reference and load return; defines V_GS control voltage

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.0–2.0 V enables direct interface with 3.3 V/5 V digital controllers without level-shifting
R_DS(on) specified at V_GS = 4 V and 5 V	Guarantees 0.28 Ω max at 4 V, ensuring robustness across supply tolerance and temperature drift
Dynamic dV/dt rating	4.5 V/ns minimum prevents spurious turn-on during fast voltage transients in motor commutation
Fast switching with low Q_gd/Q_g ratio	Q_gd = 6.0 nC / Q_g = 8.4 nC = 71 % - reduces Miller plateau time and improves hard-switching efficiency
175 °C operating temperature	Enables use in automotive under-hood or industrial motor control without derating below full current

Applications

DC-DC Synchronous Rectifier	Brushed DC Motor Driver
Use Scenario: Replaces Schottky diode in 12–48 V buck converter secondary side to reduce conduction loss. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, body diode conducts during dead-time, channel conducts during active phase. Use Value: 0.20 Ω R_DS(on) cuts forward drop vs. 0.4 V Schottky, improving efficiency by ≥1.5 % at 10 A load.	Use Scenario: Half-bridge low-side switch controlling 24 V brushed DC motor in industrial actuator. IC Role / Device Role / Timing Role: Power switch in H-bridge leg; handles bidirectional current via body diode freewheeling. Use Value: 39.5 mJ E_AS and 93–130 ns t_rr support safe inductive flyback without external snubber.
LED Constant-Current Load Switch	Hot-Swap Power Controller
Use Scenario: High-current LED string switch in architectural lighting with PWM dimming. IC Role / Device Role / Timing Role: Low-side current sink switch; modulated at 1–20 kHz to control brightness. Use Value: Fast tr = 110 ns and tf = 26 ns enable clean PWM edges, minimizing LED current ripple.	Use Scenario: Inrush current limiter in 48 V telecom power shelf during board insertion. IC Role / Device Role / Timing Role: Series pass element controlled by external linear regulator IC to ramp V_OUT. Use Value: 10 A continuous rating and 0.20 Ω R_DS(on) limit power dissipation to <1 W during steady-state operation.

DC-DC Synchronous Rectifier

Brushed DC Motor Driver

Use Scenario: Replaces Schottky diode in 12–48 V buck converter secondary side to reduce conduction loss.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, body diode conducts during dead-time, channel conducts during active phase.

Use Value: 0.20 Ω R_DS(on) cuts forward drop vs. 0.4 V Schottky, improving efficiency by ≥1.5 % at 10 A load.

Use Scenario: Half-bridge low-side switch controlling 24 V brushed DC motor in industrial actuator.

IC Role / Device Role / Timing Role: Power switch in H-bridge leg; handles bidirectional current via body diode freewheeling.

Use Value: 39.5 mJ E_AS and 93–130 ns t_rr support safe inductive flyback without external snubber.

LED Constant-Current Load Switch

Hot-Swap Power Controller

Use Scenario: High-current LED string switch in architectural lighting with PWM dimming.

IC Role / Device Role / Timing Role: Low-side current sink switch; modulated at 1–20 kHz to control brightness.

Use Value: Fast tr = 110 ns and tf = 26 ns enable clean PWM edges, minimizing LED current ripple.

Use Scenario: Inrush current limiter in 48 V telecom power shelf during board insertion.

IC Role / Device Role / Timing Role: Series pass element controlled by external linear regulator IC to ramp V_OUT.

Use Value: 10 A continuous rating and 0.20 Ω R_DS(on) limit power dissipation to <1 W during steady-state operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44NPBF	R_DS(on) = 0.028 Ω @ 5 V (7× lower), Q_g = 26 nC (3× higher), TO-220AB	Better conduction loss but higher drive demand; suited for lower-frequency, high-current apps	Select when <0.5 W conduction loss is critical and gate drive capability supports >20 nC
STP16NF06L	R_DS(on) = 0.12 Ω @ 5 V, V_DS = 60 V, Q_g = 12 nC, TO-220	Higher R_DS(on) but tighter V_GS(th) distribution (1.0–1.5 V); lower cost in volume	Prefer when gate drive margin is limited and 0.12 Ω R_DS(on) meets thermal budget

Compared with IRLZ14PBF-BE3, IRLZ44NPBF offers significantly lower conduction loss but demands more gate drive strength, while STP16NF06L trades modest R_DS(on) increase for tighter threshold control and cost efficiency-both require layout verification due to non-pin-compatible leadforms.

Availability

IRLZ14PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and hot-swap controllers requiring stable component supply and RoHS-compliant, halogen-free packaging.

Supply support for IRLZ14PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and high-reliability manufacturing.

The IRLZ14PBF-BE3 belongs to Vishay's logic-level power MOSFET family designed for industrial and commercial switching applications where direct microcontroller drive, thermal resilience, and unclamped inductive ruggedness are essential.

FAQ

What is the gate threshold voltage range for IRLZ14PBF-BE3?

The IRLZ14PBF-BE3 has a gate-source threshold voltage V_GS(th) of 1.0 V minimum to 2.0 V maximum at I_D = 250 μA and T_J = 25 °C. This logic-level range ensures reliable turn-on with standard 3.3 V or 5 V digital outputs. The IRLZ14PBF-BE3 maintains usable gain down to ~1.2 V in practical circuits, supporting marginal drive conditions without latch-up risk.

Is IRLZ14PBF-BE3 suitable for synchronous rectification in a 48 V buck converter?

Yes, the IRLZ14PBF-BE3 is suitable for synchronous rectification in 48 V buck converters. With R_DS(on) = 0.20 Ω at V_GS = 5 V and 10 A current, conduction loss is ~2.0 W-manageable with TO-220AB heatsinking. Its 93–130 ns body diode reverse recovery time and 0.34–0.65 μC Q_rr minimize shoot-through risk during dead-time transitions. The IRLZ14PBF-BE3 also supports gate drive from standard PWM controllers with adequate peak current capability.

Does IRLZ14PBF-BE3 have avalanche capability, and what is its rated energy?

Yes, the IRLZ14PBF-BE3 is rated for repetitive unclamped inductive switching with single-pulse avalanche energy E_AS = 39.5 mJ at T_C = 25 °C (test condition: V_DD = 25 V, I_AS = 10 A, L = 0.79 mH). This rating confirms ruggedness against inductive kickback in relay drivers, solenoid controls, and motor freewheeling. The IRLZ14PBF-BE3 does not require external avalanche snubbers in properly designed circuits meeting these boundary conditions.

What is the thermal resistance from junction to case for IRLZ14PBF-BE3?

The maximum junction-to-case (drain) thermal resistance R_thJC for IRLZ14PBF-BE3 is 3.5 °C/W, measured from die to the TO-220AB metal tab. This value enables accurate heatsink sizing: for example, at 10 A and 0.20 Ω R_DS(on), P_D ≈ 2.0 W yields ~7 °C rise above heatsink temperature. The IRLZ14PBF-BE3 datasheet specifies mounting torque (1.1 N·m) and greased interface to achieve this R_thJC performance.

How does the body diode performance of IRLZ14PBF-BE3 compare to standard rectifiers?

The IRLZ14PBF-BE3 body diode has V_SD = 1.6 V at I_S = 10 A and T_J = 25 °C, t_rr = 93–130 ns, and Q_rr = 0.34–0.65 μC-significantly faster than general-purpose 10 A rectifiers (e.g., 1N5408: t_rr > 2 μs), though higher forward drop than Schottky diodes. In freewheeling applications, the IRLZ14PBF-BE3 body diode enables compact designs where its speed avoids voltage spikes, and its integration eliminates discrete diode count. The IRLZ14PBF-BE3 body diode is not rated for continuous conduction beyond I_S = 10 A.

IRLZ14PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 200mOhm @ 6A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.4 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRLZ14PBF-BE3 FAQ

1.How can I place an order for IRLZ14PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ14PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ14PBF-BE3 reliable?

The price and inventory of IRLZ14PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ14PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRLZ14PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ14PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ14PBF-BE3?

IRLZ14PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ14PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ14PBF-BE3?

For technical support, including IRLZ14PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ14PBF-BE3 requirements.

6.How does Aetrix verify that IRLZ14PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRLZ14PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ14PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRLZ14PBF-BE3?

All IRLZ14PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ14PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ14PBF-BE3 part is unused and in its original packaging.

Return procedure for IRLZ14PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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