Vishay Siliconix IRLZ14S

Overview

IRLZ14S from Vishay Siliconix is a logic-level N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 60 V V_DS, 10 A continuous drain current at T_C = 25 °C, and 0.20 Ω R_DS(on) at V_GS = 5 V. It delivers fast switching, 175 °C junction operation, and integrated body diode performance for DC motor control, DC-DC converters, and solid-state relay replacement.

For engineers reviewing the IRLZ14S datasheet, IRLZ14S pinout, IRLZ14S application, or IRLZ14S equivalent, this page provides verified electrical parameters, thermal derating data, gate charge profile, avalanche energy rating (68 mJ), and real-world design implications for high-current surface-mount switching in industrial and automotive subsystems.

Technical Context

The IRLZ14S uses Vishay's third-generation trench MOSFET process to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (1.0–2.0 V) enables direct drive from 3.3 V and 5 V microcontrollers without level-shifting.

Thermal design is enabled by low R_thJC = 3.5 °C/W and specified maximum power dissipation of 43 W at T_C = 25 °C. The device supports repetitive avalanche operation up to 68 mJ and exhibits controlled diode reverse recovery (t_rr = 93–130 ns, Q_rr = 340–650 nC) under defined dI/dt and temperature conditions.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S); 14.61–15.88 mm height; 9.65–10.67 mm width; 8.38–9.65 mm length; thermal pad optional within E/L1/D1/E1 footprint per JEDEC TO-263AB outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ44NPbF and STP55NF06L, the IRLZ14S uniquely balances logic-level drivability, moderate R_DS(on), low Q_g, and rugged avalanche performance-making it optimal for compact, MCU-driven 10 A switching nodes where layout simplicity and thermal headroom are prioritized.

Availability

IRLZ14S is available at Aetrix Electronics and suitable for brushed DC motor control, industrial DC-DC converters, solid-state relay replacement, and automotive body control modules requiring stable component supply across production lifecycles.

Supply support for IRLZ14S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLZ14S belongs to Vishay's logic-level power MOSFET product line, engineered for direct microcontroller interfacing in space-constrained, thermally demanding applications such as motor drives and power conversion subsystems.

FAQ

What is the maximum continuous drain current for IRLZ14S at 100 °C case temperature?

The IRLZ14S supports 7.2 A continuous drain current at T_C = 100 °C, based on its linear derating factor of 0.29 W/°C and 43 W maximum power dissipation at 25 °C. This value is confirmed in the Absolute Maximum Ratings table of the Vishay datasheet (S20-0684-Rev. D). Designers must ensure PCB copper area and thermal interface meet the 3.5 °C/W junction-to-case resistance requirement to sustain this current reliably.

Does IRLZ14S have a specified avalanche energy rating, and how is it tested?

Yes, the IRLZ14S has a single-pulse unclamped inductive avalanche energy rating of 68 mJ, measured under test conditions of V_DD = 25 V, starting T_J = 25 °C, L = 790 μH, R_g = 25 Ω, and I_AS = 10 A (per Figure 12 in the datasheet). This rating validates its ability to absorb inductive energy without failure during switching events in relay or motor drive applications, provided pulse width and duty cycle remain within specified limits.

Can IRLZ14S be driven directly from a 3.3 V microcontroller GPIO pin?

Yes, the IRLZ14S can be driven directly from a 3.3 V microcontroller GPIO because its gate threshold voltage V_GS(th) is specified from 1.0 V to 2.0 V, and it achieves R_DS(on) = 0.28 Ω at V_GS = 4 V (ID = 5.0 A). At 3.3 V, the device remains strongly enhanced with usable on-resistance, though conduction loss increases slightly versus 5 V drive - a trade-off validated in Vishay's transfer characteristics (Figure 3) and R_DS(on) specs.

What is the thermal resistance from junction to ambient for IRLZ14S in standard PCB mount?

The maximum junction-to-ambient thermal resistance (R_thJA) for IRLZ14S is 40 °C/W when mounted on a 1" square PCB (FR-4 or G-10 material), as stated in the Thermal Resistance Ratings table. This value assumes no additional heatsink and defines the worst-case thermal path for layout validation. For higher power operation, designers should use the lower R_thJC = 3.5 °C/W path to an external heatsink or thermal pad to improve thermal performance significantly.

How does the body diode performance of IRLZ14S compare to standard rectifiers in freewheeling applications?

The IRLZ14S body diode exhibits t_rr = 93–130 ns and Q_rr = 340–650 nC at T_J = 25 °C, IS = 10 A, and di/dt = 100 A/μs - faster and lower-charge than many general-purpose rectifiers. Its V_SD = 1.6 V forward drop is higher than Schottky diodes but acceptable for low-duty-cycle freewheeling. This performance enables reduced voltage overshoot and EMI in half-bridge and synchronous rectifier configurations where the IRLZ14S serves dual switching and diode roles.