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Vishay Siliconix IRLZ14SPBF

Part No.:
IRLZ14SPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRLZ14SPBF.pdf
Description:
MOSFET N-CH 60V 10A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,162

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Product details

Overview

IRLZ14SPBF from Vishay Siliconix is a logic-level N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 60 V VDS, 10 A continuous drain current at TC = 25 °C, and 0.20 Ω RDS(on) at VGS = 5 V. It delivers fast switching with 9.3 ns turn-on delay and supports high-reliability motor control and DC-DC converter applications up to 175 °C junction temperature.

For engineers reviewing the IRLZ14SPBF datasheet, IRLZ14SPBF pinout, IRLZ14SPBF application, or IRLZ14SPBF equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low Qg (8.4 nC), rugged unclamped avalanche capability (68 mJ), and surface-mount D2PAK thermal performance (RthJC = 3.5 °C/W).

Technical Context

This MOSFET employs Vishay's third-generation silicon process to achieve ultra-low on-resistance per die area while maintaining robust safe operating area (SOA) and fast body diode recovery (trr = 93–130 ns). Its gate charge profile (Qgs = 3.5 nC, Qgd = 6.0 nC) enables efficient PWM operation in synchronous buck and half-bridge topologies.

The device integrates an intrinsic source-drain body diode with VSD = 1.6 V at IS = 10 A and exhibits controlled dv/dt immunity (4.5 V/ns peak) for reliable commutation in inductive loads. Thermal design leverages the D2PAK's low junction-to-case resistance and 2.0 W typical surface-mount power dissipation capability.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage for 48 V rail systems with margin
RDS(on) @ VGS = 5 V0.20 Ω - Enables <1.2 W conduction loss at 6 A DC load current
Qg8.4 nC - Low gate charge reduces driver power and switching losses
ID (continuous, TC = 25 °C)10 A - Supports high-current motor gate drivers and power supplies
tr / tf110 ns / 26 ns - Fast edge rates minimize transition-time losses in hard-switched converters
EAS68 mJ - Withstands unclamped inductive energy in relay/snubberless designs
TJ max+175 °C - Enables operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Gate (G)Control electrodeLogic-compatible input requiring only 5 V to fully enhance; VGS(th) range 1.0–2.0 V ensures reliable turn-on with microcontroller GPIO
Drain (D)High-side power terminalConnected to PCB thermal pad; carries full load current and dissipates heat directly to copper plane (RthJC = 3.5 °C/W)
Source (S)Reference/return pathLow-inductance return node; internal source inductance LS = 7.5 nH minimizes ringing during fast switching

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at 5 V VGS, eliminating need for gate boosters in 3.3 V/5 V MCU-controlled systems
Rugged avalanche rating68 mJ single-pulse EAS allows reliable operation without external snubbers in inductive switching circuits
Fast body diode recoverytrr = 93–130 ns and Qrr = 340–650 nC reduce cross-conduction losses in synchronous rectification
Surface-mount D2PAKEnables high-power density layout with 43 W PD capability and optimized thermal path to PCB
175 °C junction ratingSupports extended lifetime in thermally constrained industrial and automotive under-hood applications

Applications

Brushless DC Motor ControlIndustrial DC-DC Converters

Use Scenario: Half-bridge gate driver stage in 24–48 V BLDC inverters for HVAC blowers and power tools.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (tf = 26 ns) to minimize shoot-through risk during PWM commutation.

Use Value: 0.20 Ω RDS(on) at 5 V gate drive reduces conduction loss by >30% vs. standard-level MOSFETs requiring 10 V drive.

Use Scenario: Synchronous rectifier in isolated 48 V-to-12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Secondary-side power switch leveraging low Qgd/Qgs ratio for precise duty-cycle control and minimal reverse recovery penalty.

Use Value: Body diode VSD = 1.6 V and trr ≤ 130 ns enable high-efficiency synchronous rectification without external Schottky assist.

LED Constant-Current DriversAutomotive Body Control Modules

Use Scenario: High-side current sink in multi-string LED lighting systems with PWM dimming.

IC Role / Device Role / Timing Role: Precision current-regulating switch with stable RDS(on) over temperature (ΔRDS(on)/°C = +0.5%/°C typical).

Use Value: 10 A ID rating and 175 °C TJ allow compact heatsink-free designs in enclosed luminaires.

Use Scenario: Load switch for solenoid valves and window lift actuators in 12 V vehicle subsystems.

IC Role / Device Role / Timing Role: Protected high-current switch with integrated avalanche energy handling for inductive kickback suppression.

Use Value: 68 mJ EAS eliminates need for external TVS/clamp diodes in cost-sensitive BCM designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFZ44NPBFHigher VGS(th) (2–4 V), higher RDS(on) (0.028 Ω @ 10 V), requires 10 V gate driveNot logic-level; unsuitable for direct 3.3 V/5 V MCU drive without level shiftSelect when higher VDS margin (55 V) and lower RDS(on) at 10 V are prioritized over gate drive simplicity
STP16NF06LLower VDS (60 V same), slightly higher RDS(on) (0.22 Ω @ 5 V), similar Qg (9.5 nC)Compatible logic-level operation but lower avalanche rating (EAS = 45 mJ)Choose when STMicroelectronics supply chain alignment or alternate qualification is required

Compared with IRLZ14SPBF, IRFZ44NPBF demands higher gate voltage and offers better conduction efficiency only with 10 V drive, while STP16NF06L matches logic-level usability but provides less robust avalanche tolerance-making IRLZ14SPBF optimal for space-constrained, thermally demanding, and inductive-load applications needing guaranteed 5 V turn-on.

Availability

IRLZ14SPBF is available at Aetrix Electronics and suitable for brushless DC motor control, industrial DC-DC converters, LED constant-current drivers, and automotive body control modules requiring stable component supply and long-term manufacturability.

Supply support for IRLZ14SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The IRLZ14SPBF belongs to Vishay's logic-level power MOSFET product line, engineered for high-efficiency switching in space- and thermally constrained applications where low gate drive voltage and ruggedness are critical.

FAQ

What is the maximum continuous drain current for IRLZ14SPBF at 100 °C case temperature?

The IRLZ14SPBF supports 7.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated against actual board layout and airflow conditions. The IRLZ14SPBF maintains stable RDS(on) up to 175 °C junction temperature, enabling operation in high-ambient environments when properly heatsinked.

Does IRLZ14SPBF require a gate resistor for safe switching?

Yes, a gate resistor is recommended for IRLZ14SPBF to control dV/dt and prevent oscillation during switching. Typical values range from 10 Ω to 25 Ω depending on drive strength and layout parasitics. The IRLZ14SPBF datasheet specifies test conditions using Rg = 12 Ω for switching time measurements, and its low Qg (8.4 nC) allows use of small, cost-effective resistors without compromising speed.

Can IRLZ14SPBF be used in avalanche mode repeatedly?

No-IRLZ14SPBF is rated for single-pulse avalanche energy (EAS = 68 mJ), not repetitive avalanche. The datasheet explicitly defines this as a "single pulse" rating limited by maximum junction temperature. Repeated avalanche operation risks cumulative thermal stress and premature failure. For circuits subject to frequent inductive transients, external clamping or snubbing is advised alongside IRLZ14SPBF use.

What is the body diode forward voltage of IRLZ14SPBF at 10 A?

The body diode forward voltage (VSD) of IRLZ14SPBF is 1.6 V at IS = 10 A, TJ = 25 °C, and VGS = 0 V. This value increases with temperature and current; at 150 °C junction temperature, VSD remains below 2.0 V. The IRLZ14SPBF body diode exhibits fast recovery (trr = 93–130 ns), making it suitable for freewheeling in synchronous rectifier and H-bridge configurations.

Is IRLZ14SPBF RoHS-compliant and halogen-free?

Yes, IRLZ14SPBF is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements. The "PbF" suffix denotes lead-free termination, and material compliance is confirmed in Vishay's documentation (e.g., Doc. #99912). The IRLZ14SPBF is also compliant with JEDEC standards for moisture sensitivity level (MSL) and soldering profiles, including peak reflow temperature of 300 °C for 10 seconds.

IRLZ14SPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Rds On (Max) @ Id, Vgs:
200mOhm @ 6A, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.4 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.7W (Ta), 43W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

IRLZ14SPBF FAQ

1.How can I place an order for IRLZ14SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ14SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ14SPBF reliable?

The price and inventory of IRLZ14SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ14SPBF is usually 5 days.

3.What payment methods are accepted for IRLZ14SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ14SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ14SPBF?

IRLZ14SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ14SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ14SPBF?

For technical support, including IRLZ14SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ14SPBF requirements.

6.How does Aetrix verify that IRLZ14SPBF is sourced from the original manufacturer or authorized distributors?

All IRLZ14SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ14SPBF meets industry standards.

7.What is the process for return or replacement of IRLZ14SPBF?

All IRLZ14SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ14SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ14SPBF part is unused and in its original packaging.

Return procedure for IRLZ14SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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