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Vishay Siliconix IRLZ14STRR

Part No.:
IRLZ14STRR
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRLZ14STRR.pdf
Description:
MOSFET N-CH 60V 10A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,794

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Product details

Overview

IRLZ14STRR from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 60 V VDS, 10 A continuous drain current at TC = 25 °C, and 0.20 Ω RDS(on) at VGS = 5 V. It delivers fast switching with 8.4 nC total gate charge and supports high-temperature operation up to +175 °C junction temperature, making it suitable for DC-DC synchronous rectification and motor drive half-bridge legs.

For engineers reviewing the IRLZ14STRR datasheet, IRLZ14STRR pinout, IRLZ14STRR application, or IRLZ14STRR equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) at 5 V, avalanche energy rating of 68 mJ, and surface-mount D2PAK thermal performance (RthJC = 3.5 °C/W).

Technical Context

This MOSFET uses Vishay's third-generation silicon process to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage range (1.0–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers without external level shifting.

The device integrates a fast-recovery body diode (trr = 93–130 ns, Qrr = 340–650 nC) and exhibits low output capacitance (Coss = 170 pF) and reverse transfer capacitance (Crss = 42 pF), supporting high-frequency hard-switching topologies up to several hundred kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage for use in 48 V bus systems and automotive auxiliary loads
RDS(on) @ VGS = 5 V0.20 Ω - Enables <1.2 W conduction loss at 6 A DC, reducing heatsink requirements
Qg8.4 nC - Low gate charge allows efficient driving with small gate drivers or microcontroller GPIOs
ID (continuous, TC = 25 °C)10 A - Supports medium-power switching in industrial motor controls and power supplies
EAS68 mJ - Rated avalanche energy permits robust operation under inductive load switching stress
TJ max+175 °C - Enables operation in sealed enclosures or high-ambient environments without derating
RthJC3.5 °C/W - High thermal conductivity from junction to case enables >30 W power dissipation with minimal heatsink

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); lead (Pb)-free and halogen-free construction.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control terminalAccepts 0–10 V logic-level signals; low input capacitance (Ciss = 400 pF) minimizes driver loading
D (Drain)High-side switch outputConnected to exposed thermal pad; must be soldered to large copper area for thermal management
S (Source)Reference/return pathProvides common return for gate drive and load current; used as local ground reference in high-side configurations

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 1.0–2.0 V enables direct interfacing with 3.3 V/5 V MCUs without level shifters
Low RDS(on) at 5 V0.20 Ω reduces conduction losses by >40% vs. standard MOSFETs requiring 10 V gate drive
Fast body diode recoverytrr = 93–130 ns and Qrr = 340–650 nC minimize switching loss and ringing in synchronous rectifiers
D2PAK thermal performanceRthJC = 3.5 °C/W supports >30 W dissipation with simple PCB copper heatsinking
Avalanche-rated68 mJ single-pulse EAS provides margin against inductive kickback in relay/motor drive circuits

Applications

Brushless DC Motor ControlIndustrial DC-DC Converters

Use Scenario: Half-bridge phase leg in 24–48 V BLDC drives for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switching element with synchronous rectification capability.

Use Value: Logic-level gate enables direct PWM control from MCU timers; low RDS(on) cuts I²R losses during high-current commutation.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V-to-12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Power switch replacing Schottky diode to improve efficiency at 10–20 A loads.

Use Value: Fast body diode recovery (trr < 130 ns) prevents cross-conduction loss; 60 V rating covers output overvoltage transients.

Automotive Auxiliary LoadsLED Driver Switching Stages

Use Scenario: High-current load switch for 12 V/24 V cabin lighting, solenoids, or fan control.

IC Role / Device Role / Timing Role: Single N-channel high-side or low-side power switch controlled via automotive MCU.

Use Value: 175 °C rated junction temperature meets under-hood thermal requirements; Pb-free/halogen-free compliance satisfies automotive RoHS.

Use Scenario: Constant-current switching stage in high-brightness LED drivers for signage and street lighting.

IC Role / Device Role / Timing Role: Main switching transistor in buck or boost topology operating at 100–500 kHz.

Use Value: Low Qg (8.4 nC) and Coss (170 pF) reduce gate drive loss and enable stable high-frequency operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLZ44NTRRRDS(on) = 0.028 Ω @ 5 V (lower), but VDS = 55 V (lower); Qg = 71 nC (much higher)Better conduction loss at low voltage, but slower switching and lower voltage marginPrefer IRLZ14STRR where 60 V rating and fast switching dominate; choose IRLZ44NTRR only if ultra-low RDS(on) at ≤40 V is critical
STP16NF06LT4VDS = 60 V (same), RDS(on) = 0.12 Ω @ 10 V (not logic-level), VGS(th) = 2–4 V (higher threshold)Requires 10 V gate drive; unsuitable for 3.3 V logic interfaces without bufferSelect IRLZ14STRR when logic-level compatibility with 3.3 V/5 V controllers is mandatory; STP16NF06LT4 suits 12 V gate drive systems

Compared with IRLZ44NTRR and STP16NF06LT4, the IRLZ14STRR uniquely balances 60 V rating, true logic-level gate drive (1.0–2.0 V), low Qg, and fast body diode-making it optimal for space-constrained, thermally demanding, and low-voltage-control applications where both efficiency and drive simplicity matter.

Availability

IRLZ14STRR is available at Aetrix Electronics and suitable for industrial motor drives, automotive auxiliary switching, and high-efficiency DC-DC converters requiring stable component supply across production lifecycles.

Supply support for IRLZ14STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLZ14STRR belongs to Vishay's logic-level power MOSFET product line, engineered for high-efficiency switching in space- and thermal-constrained applications where direct microcontroller interface and ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for IRLZ14STRR at 100 °C case temperature?

The IRLZ14STRR supports 7.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation under sustained high-temperature conditions without exceeding the 175 °C maximum junction temperature. The linear derating factor is 0.29 W/°C above 25 °C case temperature.

Does IRLZ14STRR have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRLZ14STRR integrates a monolithic body diode with trr = 93–130 ns and Qrr = 340–650 nC at TJ = 25 °C, IF = 10 A, and di/dt = 100 A/μs. These values are measured under standardized test conditions and confirm suitability for synchronous rectification and freewheeling in hard-switched topologies. The diode's forward voltage is 1.6 V at 10 A and 25 °C.

Is IRLZ14STRR compatible with 3.3 V microcontroller GPIOs for direct gate driving?

Yes, the IRLZ14STRR has a gate threshold voltage range of 1.0–2.0 V and achieves full enhancement at VGS = 5 V, making it fully compatible with 3.3 V logic outputs. At VGS = 3.3 V, RDS(on) rises to approximately 0.28 Ω (per datasheet), which remains usable for moderate-current applications; for lowest losses, 5 V drive is recommended.

What is the thermal resistance from junction to case (RthJC) for IRLZ14STRR, and how does it impact heatsink design?

The IRLZ14STRR has a maximum junction-to-case thermal resistance (RthJC) of 3.5 °C/W. This low value means that with a 100 °C temperature rise from junction to case, the device can dissipate up to ~28.6 W continuously. In practice, effective PCB copper area under the exposed drain pad replaces or supplements traditional heatsinks-no external heatsink is required for ≤15 W dissipation in typical FR-4 layouts.

How does the avalanche energy rating of IRLZ14STRR support reliability in inductive load switching?

The IRLZ14STRR is rated for 68 mJ single-pulse avalanche energy (EAS) under defined test conditions (VDD = 25 V, L = 790 μH, IAS = 10 A). This specification validates its ability to absorb inductive energy during unclamped inductive switching events-such as motor phase commutation or relay de-energization-without failure, enhancing system robustness in real-world industrial and automotive applications.

IRLZ14STRR Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Rds On (Max) @ Id, Vgs:
200mOhm @ 6A, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.4 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.7W (Ta), 43W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

IRLZ14STRR FAQ

1.How can I place an order for IRLZ14STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ14STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ14STRR reliable?

The price and inventory of IRLZ14STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ14STRR is usually 5 days.

3.What payment methods are accepted for IRLZ14STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ14STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ14STRR?

IRLZ14STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ14STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ14STRR?

For technical support, including IRLZ14STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ14STRR requirements.

6.How does Aetrix verify that IRLZ14STRR is sourced from the original manufacturer or authorized distributors?

All IRLZ14STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ14STRR meets industry standards.

7.What is the process for return or replacement of IRLZ14STRR?

All IRLZ14STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ14STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ14STRR part is unused and in its original packaging.

Return procedure for IRLZ14STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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