Vishay Siliconix IRLZ14STRRPBF

Overview

IRLZ14STRRPBF from Vishay Siliconix is a logic-level N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 60 V V_DS, 10 A continuous drain current at T_C = 25 °C, and 0.20 Ω R_DS(on) at V_GS = 5 V. It delivers fast switching with 9.3 ns turn-on delay and supports high-temperature operation up to 175 °C junction temperature, making it suitable for DC-DC synchronous rectification and motor control in industrial power supplies.

For engineers reviewing the IRLZ14STRRPBF datasheet, IRLZ14STRRPBF pinout, IRLZ14STRRPBF application, or IRLZ14STRRPBF equivalent, this page provides verified electrical parameters, thermal performance data, body diode recovery characteristics (t_rr = 93–130 ns), gate charge profile (Q_g = 8.4 nC), and real-world mounting guidance for surface-mount PCB design with FR-4 substrates.

Technical Context

This MOSFET employs Vishay's third-generation silicon process to achieve low on-resistance per die area while maintaining rugged avalanche capability (E_AS = 68 mJ). Its logic-level gate threshold (V_GS(th) = 1.0–2.0 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The device integrates a fast-recovery body diode (Q_rr = 340–650 nC, t_rr = 93–130 ns) and exhibits low output capacitance (C_oss = 170 pF) and reverse transfer capacitance (C_rss = 42 pF), supporting high-frequency switching in hard-switched topologies up to several hundred kHz.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S); JEDEC-compliant outline; recommended minimum pad layout includes 10.67 mm × 16.13 mm thermal pad with solder mask defined openings.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLZ44NPBF and STP16NF06L, the IRLZ14STRRPBF offers balanced trade-offs: lower gate charge than IRLZ44NPBF for faster switching, and surface-mount D2PAK packaging unlike STP16NF06L-making it optimal for new designs targeting 100–300 kHz operation with moderate current (<10 A) and strict thermal constraints.

Availability

IRLZ14STRRPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC synchronous rectification, LED constant-current drivers, and power OR-ing circuits requiring stable component supply and long-term production continuity.

Supply support for IRLZ14STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix, a division of Vishay Intertechnology, designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high reliability and power efficiency.

The IRLZ14STRRPBF belongs to Vishay's logic-level power MOSFET product line, engineered specifically for direct microcontroller interfacing in compact, high-efficiency power conversion and load switching applications.

FAQ

What is the maximum continuous drain current rating for IRLZ14STRRPBF at 100 °C case temperature?

The IRLZ14STRRPBF supports 7.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limitations and ensures safe operation without exceeding the 175 °C maximum junction temperature. The linear derating factor is 0.29 W/°C beyond 25 °C case temperature, allowing precise thermal design for custom heatsinking solutions. IRLZ14STRRPBF maintains stable R_DS(on) performance across this range due to its positive temperature coefficient.

Does IRLZ14STRRPBF have avalanche energy rating, and how is it tested?

Yes, IRLZ14STRRPBF is rated for single-pulse unclamped inductive avalanche energy (E_AS) of 68 mJ, tested per conditions in Figure 12: V_DD = 25 V, starting T_J = 25 °C, L = 790 μH, R_g = 25 Ω, and I_AS = 10 A. This rating confirms robustness against transient overvoltage events in inductive load switching. The IRLZ14STRRPBF datasheet specifies repetitive avalanche is not guaranteed, so external clamping or snubbing is recommended for cyclic inductive stress.

Can IRLZ14STRRPBF be used with 3.3 V microcontroller GPIOs without a gate driver?

Yes, IRLZ14STRRPBF is a logic-level MOSFET with V_GS(th) ranging from 1.0 V to 2.0 V and fully enhanced at V_GS = 4.0 V (R_DS(on) ≤ 0.28 Ω). While 3.3 V may partially enhance the device, full conduction requires ≥4.5 V for reliable 0.20 Ω R_DS(on). For guaranteed performance at 3.3 V, use with a simple discrete level shifter or buffer; the IRLZ14STRRPBF itself does not integrate level-shifting functionality.

What is the thermal resistance from junction to ambient (R_thJA) for IRLZ14STRRPBF on a standard PCB?

The maximum junction-to-ambient thermal resistance (R_thJA) for IRLZ14STRRPBF is 40 °C/W when mounted on a 1" square FR-4 PCB, as stated in the Thermal Resistance Ratings table. This value assumes no additional heatsink and standard copper pour. Actual R_thJA improves significantly with larger thermal pads or internal copper planes. The IRLZ14STRRPBF's low R_thJC of 3.5 °C/W enables efficient heat transfer to external heatsinks when the drain tab is soldered to a thermal pad.

Is IRLZ14STRRPBF RoHS-compliant and halogen-free?

Yes, IRLZ14STRRPBF is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements. Its material categorization complies with Vishay document 99912, and the "-GE3" suffix variants (e.g., SiHLZ14STRR-GE3) denote this compliance. The IRLZ14STRRPBF part number explicitly references the Pb-free/halogen-free version per Vishay's ordering information table, distinguishing it from legacy Pb-bearing variants like IRLZ14SPbF.