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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLZ24PBF-BE3

Name: IRLZ24PBF-BE3
Brand: Vishay Siliconix
SKU: IRLZ24PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ24PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRLZ24PBF-BE3.pdf

Description:: MOSFET N-CH 60V 17A TO220AB

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Product details

Overview

IRLZ24PBF-BE3 from Vishay Siliconix is a logic-level N-channel Power MOSFET in TO-220AB package, rated for 60 V V_DS, 17 A continuous drain current at T_C = 25 °C, and 0.10 Ω R_DS(on) at V_GS = 5 V. It operates up to 175 °C junction temperature and is used in DC-DC converters, motor control circuits, and high-efficiency switching power supplies.

For engineers reviewing the IRLZ24PBF-BE3 datasheet, IRLZ24PBF-BE3 pinout, IRLZ24PBF-BE3 application, or IRLZ24PBF-BE3 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V, avalanche energy rating (E_AS = 64.1 mJ), and thermal resistance (R_thJC = 2.5 °C/W).

Technical Context

This MOSFET employs third-generation silicon process technology optimized for fast switching and ruggedized operation under repetitive unclamped inductive switching (UIS) stress. Its dynamic dV/dt rating of 4.5 V/ns and body diode reverse recovery time (t_rr = 110–260 ns) support reliable operation in hard-switched topologies.

The device features low gate charge (Q_g = 18 nC, Q_gd = 12 nC) and internal source/drain inductance (L_S = 7.5 nH, L_D = 4.5 nH), enabling efficient gate drive design with minimal external component count and reduced switching losses in high-frequency applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before breakdown; defines maximum input/output rail voltage in buck, boost, or H-bridge designs.
R_DS(on) @ V_GS = 5 V	0.10 Ω - Conduction loss of ~1.7 W at 17 A; enables high-efficiency operation without forced cooling below 12 A.
Q_g	18 nC - Total gate charge required for full turn-on; determines gate driver current demand and switching speed trade-off.
I_D (continuous, T_C = 25 °C)	17 A - Maximum steady-state current with heatsink; derates linearly to 12 A at 100 °C case temperature.
E_AS	64.1 mJ - Single-pulse avalanche energy capability; supports robustness against inductive load transients without snubbers.
T_J max	175 °C - Maximum junction temperature; allows operation in high-ambient industrial environments with appropriate thermal design.
R_thJC	2.5 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting with minimal interface thermal resistance.

Pinout & Package

IRLZ24PBF-BE3 uses the standard TO-220AB package with three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and serves as the primary thermal path to the heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Logic-level control input; requires only 4–5 V to fully enhance; low Q_gs (4.5 nC) minimizes driver power consumption.
D	Drain	Main high-side switching node; connected to metal tab for thermal conduction; must be isolated from heatsink unless circuit ground reference permits.
S	Source	Power return path and reference for gate drive; internal body diode anode; connects to PCB ground plane for low-inductance current return.

Key Features

Feature	Design Value
Logic-Level Gate Drive	V_GS(th) = 1.0–2.0 V enables direct interfacing with 3.3 V/5 V microcontrollers and gate drivers without level-shifting circuitry.
Rugged UIS Capability	Rated for 64.1 mJ single-pulse avalanche energy ensures survival during inductive load turn-off without external clamping.
Low Thermal Resistance	R_thJC = 2.5 °C/W allows >50 W power dissipation with modest heatsinking-critical for space-constrained industrial SMPS designs.
Fast Switching Performance	Turn-on delay (11 ns), rise time (110 ns), and fall time (41 ns) support >100 kHz switching frequencies with low overlap loss.
RoHS-Compliant Construction	Lead (Pb)-free terminations meet Directive 2002/95/EC; SnPb variants available for legacy rework requirements.

Applications

Motor Control	DC-DC Converters
Use Scenario: Brushed DC motor drive in industrial actuators requiring bidirectional PWM control at 20–50 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling motor current path; body diode provides freewheeling path during PWM off-time. Use Value: Logic-level gate drive simplifies MCU GPIO interface; 0.10 Ω R_DS(on) limits conduction loss to <1.5 W at 12 A, reducing heatsink size by 40% vs. non-logic alternatives.	Use Scenario: Synchronous rectifier in 12 V input, 5 V/10 A isolated flyback converter for telecom power systems. IC Role / Device Role / Timing Role: Secondary-side synchronous MOSFET replacing Schottky diode to reduce forward drop and improve efficiency. Use Value: Low Q_gd/Q_g ratio (12/18 = 0.67) minimizes Miller-induced shoot-through risk; 175 °C rating supports operation near transformer hot spots.
Power Inverters	Lighting Ballasts
Use Scenario: Half-bridge leg in 24 V battery-powered solar micro-inverter driving 120 VAC loads. IC Role / Device Role / Timing Role: High-side and low-side switching element; withstands 60 V bus with margin for transient spikes. Use Value: dV/dt rating of 4.5 V/ns prevents false turn-on during fast voltage transitions; TO-220AB mechanical robustness supports vibration-prone outdoor mounting.	Use Scenario: Electronic ballast for T5 fluorescent lamps operating at 40–60 kHz with dimming control. IC Role / Device Role / Timing Role: Resonant tank switch in series-resonant topology; handles high peak currents during zero-voltage switching transitions. Use Value: Body diode t_rr = 110–260 ns ensures clean commutation; low C_oss (360 pF) reduces capacitive switching loss at high frequency.

Motor Control

DC-DC Converters

Use Scenario: Brushed DC motor drive in industrial actuators requiring bidirectional PWM control at 20–50 kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling motor current path; body diode provides freewheeling path during PWM off-time.

Use Value: Logic-level gate drive simplifies MCU GPIO interface; 0.10 Ω R_DS(on) limits conduction loss to <1.5 W at 12 A, reducing heatsink size by 40% vs. non-logic alternatives.

Use Scenario: Synchronous rectifier in 12 V input, 5 V/10 A isolated flyback converter for telecom power systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous MOSFET replacing Schottky diode to reduce forward drop and improve efficiency.

Use Value: Low Q_gd/Q_g ratio (12/18 = 0.67) minimizes Miller-induced shoot-through risk; 175 °C rating supports operation near transformer hot spots.

Power Inverters

Lighting Ballasts

Use Scenario: Half-bridge leg in 24 V battery-powered solar micro-inverter driving 120 VAC loads.

IC Role / Device Role / Timing Role: High-side and low-side switching element; withstands 60 V bus with margin for transient spikes.

Use Value: dV/dt rating of 4.5 V/ns prevents false turn-on during fast voltage transitions; TO-220AB mechanical robustness supports vibration-prone outdoor mounting.

Use Scenario: Electronic ballast for T5 fluorescent lamps operating at 40–60 kHz with dimming control.

IC Role / Device Role / Timing Role: Resonant tank switch in series-resonant topology; handles high peak currents during zero-voltage switching transitions.

Use Value: Body diode t_rr = 110–260 ns ensures clean commutation; low C_oss (360 pF) reduces capacitive switching loss at high frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ34NPBF	V_DS = 55 V, R_DS(on) = 0.055 Ω @ 5 V, Q_g = 26 nC, higher current (27 A)	Better conduction efficiency but slower switching due to higher Q_g; less suitable for >150 kHz designs	Select when lower R_DS(on) dominates over switching speed; verify layout can handle higher peak gate current.
STP55NF06L	V_DS = 60 V, R_DS(on) = 0.022 Ω @ 5 V, Q_g = 65 nC, TO-220FP package (isolated tab)	Lower on-resistance but significantly higher gate charge; requires stronger gate driver and larger heatsink footprint	Prefer for ultra-low-loss 12–24 V systems where gate drive strength and isolation are available.

Compared with IRLZ24PBF-BE3, the IRLZ34NPBF offers lower conduction loss but demands more gate drive energy, while the STP55NF06L delivers superior R_DS(on) at the cost of switching speed and thermal interface complexity-making IRLZ24PBF-BE3 optimal for balanced performance in mid-power industrial switching.

Availability

IRLZ24PBF-BE3 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and lighting ballasts requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRLZ24PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability, ruggedness, and high-power density.

The IRLZ24PBF-BE3 belongs to Vishay's third-generation logic-level Power MOSFET family, engineered for high-efficiency switching in industrial power conversion, motor drives, and automotive auxiliary systems where low gate drive voltage and thermal resilience are critical.

FAQ

What is the maximum continuous drain current rating for IRLZ24PBF-BE3 at 100 °C case temperature?

The IRLZ24PBF-BE3 supports 12 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This reflects linear derating from 17 A at 25 °C using the specified 0.40 W/°C factor. Designers must ensure heatsink thermal resistance maintains case temperature ≤100 °C under worst-case load conditions to sustain this current.

Does IRLZ24PBF-BE3 have an integrated body diode, and what are its key parameters?

Yes, IRLZ24PBF-BE3 includes an intrinsic body diode with V_SD = 1.5 V at I_S = 17 A and T_J = 25 °C, reverse recovery time t_rr = 110–260 ns, and reverse recovery charge Q_rr = 0.49–1.5 μC. These values are measured under standardized conditions (I_F = 17 A, dI/dt = 100 A/μs) and define freewheeling behavior in inductive switching applications.

Can IRLZ24PBF-BE3 be driven directly from a 3.3 V microcontroller GPIO pin?

Yes, IRLZ24PBF-BE3 is a logic-level MOSFET with V_GS(th) = 1.0–2.0 V and guaranteed R_DS(on) = 0.14 Ω at V_GS = 4.0 V. A 3.3 V GPIO can fully enhance it, though gate resistor selection must limit peak current during switching to avoid GPIO overstress-typical R_g = 10–22 Ω is recommended.

What is the thermal resistance from junction to case (R_thJC) for IRLZ24PBF-BE3, and how does it impact heatsink design?

The junction-to-case thermal resistance R_thJC for IRLZ24PBF-BE3 is 2.5 °C/W, measured from die to TO-220AB metal tab. This value enables accurate heatsink sizing: for example, to maintain T_J ≤ 150 °C at 30 W dissipation with T_A = 70 °C ambient, total system R_th must be ≤ 2.67 °C/W, so heatsink + interface resistance must be ≤ 0.17 °C/W.

Is IRLZ24PBF-BE3 suitable for avalanche-rated operation, and what is its single-pulse E_AS rating?

Yes, IRLZ24PBF-BE3 is characterized for unclamped inductive switching (UIS) with a single-pulse avalanche energy rating E_AS = 64.1 mJ at T_J = 25 °C. This rating applies under defined test conditions (V_DD = 25 V, L = 444 μH, R_g = 25 Ω, I_AS = 17 A) and validates robustness against inductive load transients without external protection.

IRLZ24PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 100mOhm @ 10A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRLZ24PBF-BE3 FAQ

1.How can I place an order for IRLZ24PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ24PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ24PBF-BE3 reliable?

The price and inventory of IRLZ24PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ24PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRLZ24PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ24PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ24PBF-BE3?

IRLZ24PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ24PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ24PBF-BE3?

For technical support, including IRLZ24PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ24PBF-BE3 requirements.

6.How does Aetrix verify that IRLZ24PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRLZ24PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ24PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRLZ24PBF-BE3?

All IRLZ24PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ24PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ24PBF-BE3 part is unused and in its original packaging.

Return procedure for IRLZ24PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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