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Vishay Siliconix IRLZ24S

Part No.:
IRLZ24S
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRLZ24S.pdf
Description:
MOSFET N-CH 60V 17A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,273

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Product details

Overview

IRLZ24S from Vishay Siliconix is a logic-level N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 60 V VDS, 17 A continuous drain current at TC = 25 °C, and RDS(on) = 0.10 Ω at VGS = 5 V. It features fast switching, 175 °C maximum junction temperature, and dynamic dV/dt rating - used in DC-DC converters, motor control stages, and high-efficiency power switches where low gate drive voltage and rugged avalanche capability are required.

For engineers reviewing the IRLZ24S datasheet, IRLZ24S pinout, IRLZ24S application, or IRLZ24S equivalent, this page delivers verified electrical parameters, thermal performance data, package mechanical details, real-world switching behavior, and validated alternative options - all specific to the IRLZ24S variant with D2PAK packaging and logic-level gate drive characteristics.

Technical Context

The IRLZ24S employs third-generation trench-gate silicon technology optimized for low RDS(on) and fast switching with minimal gate charge (Qg = 18 nC). Its logic-level gate threshold (VGS(th) = 1.0–2.0 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

It integrates a robust body diode with trr = 110–260 ns and Qrr = 0.49–1.5 μC, supporting synchronous rectification and unclamped inductive switching. The device sustains 110 mJ single-pulse avalanche energy and exhibits dV/dt immunity up to 4.5 V/ns - critical for noise-immune operation in high-di/dt environments.

Key Specifications

Parameter Value and Actual Design Meaning
VDS60 V - supports 48 V bus systems with 20 % margin against transients
RDS(on) @ VGS = 5 V0.10 Ω - enables <1.7 W conduction loss at 17 A, reducing heatsink requirements
Qg18 nC - allows efficient 100–500 kHz switching with moderate gate driver strength
TJ max175 °C - permits operation in sealed enclosures or high-ambient industrial environments
EAS110 mJ - withstands inductive kickback in motor H-bridge or solenoid drivers without snubbers
dV/dt rating4.5 V/ns - resists false turn-on in noisy power stage layouts
ID @ TC = 100 °C12 A - defines usable current derating for surface-mount PCB thermal management

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad on underside for thermal conduction; 3-pin configuration (G, D, S), standard footprint per JEDEC MS-013AC.

Pin/Terminal Circuit Role Design Meaning
G (Gate)Control terminalLogic-level input (VGS(th) ≤ 2.0 V); requires <4.5 nC to fully enhance; sensitive to ESD
D (Drain)High-side power outputConnected to exposed copper pad on package backside; primary thermal path to PCB ground plane
S (Source)Reference node / return pathCommon source for load current; ties to gate driver return and system ground reference

Key Features

Feature Design Value
Logic-level gate driveOperates fully enhanced at VGS = 4.0 V (RDS(on) = 0.14 Ω), enabling direct MCU GPIO control
Ruggedized avalanche capability110 mJ single-pulse EAS ensures reliability in inductive load switching without external clamping
Low Qgd/Qg ratioQgd = 12 nC of total Qg = 18 nC - improves hard-switching efficiency and reduces Miller-induced oscillation risk
175 °C rated junctionSupports extended thermal design margin in automotive under-hood or industrial motor drive applications
Halogen-free & RoHS-compliantMeets IEC 61249-2-21 and Directive 2002/95/EC - suitable for green electronics manufacturing

Applications

Brushless DC Motor Control Industrial DC-DC Converter

Use Scenario: Half-bridge high-side switch in 24–48 V BLDC inverter driving fans or pumps.

IC Role / Device Role / Timing Role: Power switch controlling phase voltage; operates in PWM mode at 20–100 kHz with fast turn-on/turn-off.

Use Value: Low RDS(on) minimizes conduction loss; 175 °C rating accommodates sealed motor housing temperatures.

Use Scenario: Synchronous rectifier or main switch in isolated 48 V-to-12 V flyback or forward converter.

IC Role / Device Role / Timing Role: Primary-side switching element handling 10–17 A peak currents with tight duty-cycle control.

Use Value: Qg = 18 nC enables clean gate drive with low-power drivers; dV/dt immunity prevents false triggering from transformer leakage spikes.

LED Constant-Current Driver Power OR-ing Circuit

Use Scenario: High-current LED string dimming via PWM in architectural lighting systems.

IC Role / Device Role / Timing Role: Low-side current switch modulating 10–15 A LED loads at 1–5 kHz.

Use Value: Logic-level gate simplifies microcontroller interface; body diode recovery (trr = 110 ns) limits reverse recovery loss during PWM off-time.

Use Scenario: Redundant 48 V supply OR-ing in telecom power shelves or server PSUs.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET replacing Schottky diodes to reduce forward drop and heat generation.

Use Value: RDS(on) = 0.10 Ω yields <150 mV forward drop at 15 A - cutting conduction loss by >70 % vs. diode-based OR-ing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRLZ44SRDS(on) = 0.028 Ω @ 5 V (lower), Qg = 25 nC (higher), same D2PAK packageBetter conduction loss but slower switching; suited for lower-frequency, higher-current appsSelect IRLZ44S when RDS(on) reduction outweighs gate drive power and switching loss trade-offs
SiHLZ24SSame RDS(on), Qg, and thermal specs; halogen-free per IEC 61249-2-21 (IRLZ24S is halogen-free per same standard)No functional difference; identical pinout, biasing, and layout - direct material substitutionChoose SiHLZ24S for full halogen-free compliance traceability or alternate supply chain sourcing

Compared with IRLZ24S, IRLZ44S offers significantly lower on-resistance but demands more gate drive energy and exhibits higher switching losses above 100 kHz, while SiHLZ24S provides identical electrical and thermal performance with enhanced halogen-free documentation - making it a seamless drop-in replacement where supply chain diversification is needed.

Availability

IRLZ24S is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and LED lighting systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRLZ24S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLZ24S belongs to Vishay's logic-level Power MOSFET family engineered for high-efficiency, low-voltage gate drive in space-constrained power conversion and motor control applications - emphasizing ruggedness, thermal stability, and ease of integration.

FAQ

What is the maximum continuous drain current for IRLZ24S at 100 °C case temperature?

The IRLZ24S supports 12 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package mounted on standard FR-4 PCB; actual current capability depends on heatsinking and ambient conditions. Designers should verify junction temperature using RthJC = 2.5 °C/W and power dissipation calculations in their layout.

Does IRLZ24S require a gate resistor for stable switching?

Yes, IRLZ24S benefits from an external gate resistor (Rg) to control dI/dt and suppress ringing. Typical values range from 5 Ω to 25 Ω depending on switching frequency and driver strength. The datasheet specifies Rg = 9 Ω for switching time characterization (td(on) = 11 ns, tf = 41 ns), confirming that gate resistance directly impacts both speed and EMI performance in the IRLZ24S.

Is IRLZ24S pin-compatible with IRLZ24L?

No, IRLZ24S and IRLZ24L are not pin-compatible: IRLZ24S uses D2PAK (TO-263) surface-mount packaging with gull-wing leads, while IRLZ24L uses I2PAK (TO-262) through-hole packaging with straight leads. Their footprints, mounting methods, and thermal paths differ fundamentally - PCB layout and assembly processes must be redesigned to substitute between them.

What is the body diode forward voltage of IRLZ24S at 17 A and 25 °C?

The body diode forward voltage (VSD) of IRLZ24S is 1.5 V maximum at IS = 17 A and TJ = 25 °C with VGS = 0 V, as stated in the Drain-Source Body Diode Characteristics table. This value is critical for evaluating conduction loss in freewheeling or synchronous rectification modes, especially in low-duty-cycle or discontinuous conduction mode topologies.

Can IRLZ24S be used in avalanche mode repeatedly?

The IRLZ24S is characterized for single-pulse avalanche energy (EAS = 110 mJ), but repetitive avalanche operation is not guaranteed. The datasheet notes "repetitive rating; pulse width limited by maximum junction temperature" - meaning sustained avalanche stress risks thermal runaway. For reliable repetitive inductive switching, external clamping or snubber circuits are recommended alongside IRLZ24S.

IRLZ24S Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Rds On (Max) @ Id, Vgs:
100mOhm @ 10A, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
870 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.7W (Ta), 60W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

IRLZ24S FAQ

1.How can I place an order for IRLZ24S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ24S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ24S reliable?

The price and inventory of IRLZ24S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ24S is usually 5 days.

3.What payment methods are accepted for IRLZ24S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ24S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ24S?

IRLZ24S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ24S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ24S?

For technical support, including IRLZ24S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ24S requirements.

6.How does Aetrix verify that IRLZ24S is sourced from the original manufacturer or authorized distributors?

All IRLZ24S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ24S meets industry standards.

7.What is the process for return or replacement of IRLZ24S?

All IRLZ24S units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ24S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ24S part is unused and in its original packaging.

Return procedure for IRLZ24S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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