Vishay Siliconix IRLZ24SPBF

Overview

IRLZ24SPBF from Vishay Siliconix is a logic-level N-channel Power MOSFET in D2PAK (TO-263) package, rated for 60 V V_DS, 17 A continuous drain current at T_C = 25 °C, and R_DS(on) = 0.10 Ω at V_GS = 5 V. It features fast switching, 175 °C operating junction temperature, and dynamic dV/dt rating - used in DC motor control, power supplies, and solid-state relay replacement circuits.

For engineers reviewing the IRLZ24SPBF datasheet, IRLZ24SPBF pinout, IRLZ24SPBF application, or IRLZ24SPBF equivalent, key selection considerations include its logic-level gate drive compatibility with 3.3 V/5 V microcontrollers, low on-resistance at 4–5 V gate bias, avalanche energy rating of 110 mJ, and surface-mount D2PAK thermal performance up to 60 W.

Technical Context

This third-generation Power MOSFET uses planar V-groove technology optimized for low R_DS(on) and high ruggedness. Its gate threshold voltage (1.0–2.0 V) ensures reliable turn-on with standard logic outputs, while body diode reverse recovery time (110–260 ns) and Q_rr (0.49–1.5 μC) support moderate-frequency hard-switching topologies.

The device integrates a monolithic body diode with V_SD = 1.5 V at 17 A and exhibits specified dynamic parameters including Q_g = 18 nC, Q_gd = 12 nC, and C_iss = 870 pF - enabling predictable gate drive sizing and EMI-aware layout for industrial switching applications.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Mounting requires solder paste stencil design accommodating 1.4–1.77 mm lead height and 6.0–6.22 mm body width per Vishay package drawing 91367.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLZ24SPBF, IRLZ44SPBF offers significantly lower R_DS(on) at cost of higher gate charge and drive complexity, while STP60NF06L provides higher current capacity in a non-surface-mount form factor with reduced thermal and environmental compliance.

Availability

IRLZ24SPBF is available at Aetrix Electronics and suitable for DC motor control, industrial PLC output stages, and switching power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IRLZ24SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLZ24SPBF belongs to Vishay's logic-level Power MOSFET family engineered for direct interface with microcontrollers and low-voltage gate drivers in space-constrained, thermally demanding applications.

FAQ

What is the maximum continuous drain current for IRLZ24SPBF at 100 °C case temperature?

The IRLZ24SPBF supports 12 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limitations and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to sustain this current in real-world conditions. The IRLZ24SPBF datasheet confirms this value under standardized test conditions using a 1" square FR-4 board.

Does IRLZ24SPBF have a built-in body diode, and what are its key parameters?

Yes, the IRLZ24SPBF integrates a monolithic body diode with V_SD = 1.5 V at 17 A and T_J = 25 °C, reverse recovery time t_rr = 110–260 ns, and Q_rr = 0.49–1.5 μC. These values are measured under defined conditions (IF = 17 A, dI/dt = 100 A/μs) and enable use in freewheeling and synchronous rectification roles. The IRLZ24SPBF body diode is not optimized for ultrafast recovery but is rugged enough for 20–100 kHz switching.

Can IRLZ24SPBF be driven directly by a 3.3 V microcontroller GPIO pin?

Yes, the IRLZ24SPBF is a logic-level MOSFET with V_GS(th) = 1.0–2.0 V and R_DS(on) = 0.14 Ω at V_GS = 4 V, making it compatible with 3.3 V logic. However, full enhancement (0.10 Ω) requires 5 V, so 3.3 V drive yields higher conduction loss. For reliable 3.3 V operation, verify gate charge (Q_g = 18 nC) and ensure MCU GPIO can source/sink sufficient transient current. The IRLZ24SPBF specification explicitly supports 4 V gate drive.

What is the thermal resistance from junction to case (R_thJC) for IRLZ24SPBF?

The IRLZ24SPBF has a maximum junction-to-case (drain) thermal resistance R_thJC of 2.5 °C/W, measured from die junction to the exposed drain pad. This value assumes proper soldering to a large copper pour and enables efficient heat transfer to heatsinks or chassis. It is distinct from R_thJA (62 °C/W, no PCB) and R_thJA (40 °C/W, PCB mount), both of which depend heavily on board layout. The IRLZ24SPBF thermal performance is optimized for D2PAK's low-inductance, high-current pad structure.

Is IRLZ24SPBF halogen-free and RoHS-compliant?

Yes, the IRLZ24SPBF is halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC, as confirmed in the Vishay datasheet revision C. The "PbF" suffix denotes lead-free termination, and the device contains no brominated flame retardants or chlorine-based compounds above threshold limits. This makes the IRLZ24SPBF suitable for environmentally regulated industrial and consumer electronics. All Vishay documentation references IRLZ24SPBF compliance explicitly.