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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLZ34

Name: IRLZ34
Brand: Vishay Siliconix
SKU: IRLZ34
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ34

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRLZ34.pdf

Description:: MOSFET N-CH 60V 30A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLZ34 from Vishay Siliconix is a logic-level N-channel Power MOSFET in TO-220AB package, rated for 60 V V_DS, 30 A continuous drain current at T_C = 25 °C, and R_DS(on) = 0.050 Ω at V_GS = 5 V. It operates up to 175 °C junction temperature and supports fast switching in DC motor control, power supplies, and solid-state relay applications.

For engineers reviewing the IRLZ34 datasheet, IRLZ34 pinout, IRLZ34 application, or IRLZ34 equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V, avalanche energy rating (E_AS = 128 mJ), and TO-220AB thermal performance (R_thJC = 1.7 °C/W).

Technical Context

The IRLZ34 uses planar vertical DMOS technology optimized for high-current, low-voltage switching with enhanced dV/dt immunity (4.5 V/ns). Its gate charge profile (Q_g = 35 nC, Q_gd = 25 nC) enables efficient drive with standard logic-level controllers and supports parallel operation due to positive temperature coefficient of R_DS(on).

It integrates a robust body diode (I_S = 30 A, t_rr = 120–180 ns, Q_rr = 0.70–1.3 μC) and is characterized for unclamped inductive switching (IAS = 30 A, EAS = 128 mJ), making it suitable for hard-switched flyback and buck converters where diode recovery and avalanche ruggedness are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 24–48 V system-level designs
R_DS(on) @ V_GS = 5 V	0.050 Ω - Enables ≤1.5 W conduction loss at 18 A DC
Q_g	35 nC - Determines gate driver current requirement (~1.75 mA avg. for 50 kHz switching)
T_J max	175 °C - Supports operation in sealed enclosures or high-ambient industrial environments
E_AS	128 mJ - Withstands single-pulse inductive energy without failure under specified test conditions
dV/dt rating	4.5 V/ns - Resists false turn-on during high-slew-rate transients in noisy power stages
I_D continuous @ T_C = 100 °C	21 A - Real-world derated current for heatsink-mounted operation at elevated ambient

Pinout & Package

IRLZ34 is housed in TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks. The case-to-sink thermal resistance is 0.50 °C/W with greased flat surface contact.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Logic-level compatible input (V_GS(th) = 1.0–2.0 V); requires ≤10 V drive for full enhancement
D (Drain)	High-side power output	Internally connected to metal tab; must be electrically isolated from heatsink unless circuit ground reference permits
S (Source)	Power return / reference node	Common return path for load current; defines local ground for gate drive reference

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 4–5 V gate voltage, eliminating need for gate driver boost stages in 3.3 V/5 V microcontroller systems
Ruggedized dV/dt immunity	Rated 4.5 V/ns - prevents spurious turn-on during fast voltage transients in motor drive or SMPS snubber circuits
Positive R_DS(on) tempco	Enables stable current sharing in paralleled configurations without external ballasting resistors
175 °C maximum junction temperature	Supports extended lifetime in thermally constrained industrial control modules and sealed power supplies
RoHS-compliant Pb-free variant	IRLZ34PbF meets EU RoHS Directive 2002/95/EC with SnAgCu termination

Applications

DC Motor Control	Switching Power Supply
Use Scenario: H-bridge or half-bridge driver for 24 V brushed DC motors in automated valves and HVAC actuators. IC Role / Device Role / Timing Role: Low-side or high-side switching element handling bidirectional 15–25 A peak currents with PWM frequencies up to 20 kHz. Use Value: Logic-level gate drive simplifies MCU interface; 0.050 Ω R_DS(on) limits I²R loss to <1.5 W at 18 A, reducing heatsink size.	Use Scenario: Primary-side switch in 60 W offline flyback converter with universal AC input. IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz with 48 V reflected output voltage and unclamped inductive stress. Use Value: 128 mJ avalanche energy rating absorbs leakage inductance spikes; 175 °C rating ensures reliability under sustained overload.
Solid-State Relay	Battery Protection Circuit
Use Scenario: Replacement for electromechanical relays in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Load switch controlling 24–48 V DC loads up to 30 A with zero-crossing–independent turn-on/turn-off. Use Value: Fast switching (t_f = 56 ns) enables precise timing control; TO-220AB package allows direct PCB heatsinking without auxiliary hardware.	Use Scenario: Charge/discharge FET in lithium-ion battery pack protection IC (e.g., DW01A + 8205A configuration). IC Role / Device Role / Timing Role: High-current pass transistor enabling >20 A continuous discharge while supporting overcurrent shutdown via sense resistor feedback. Use Value: Low 0.050 Ω R_DS(on) minimizes voltage drop across FET pair; body diode forward voltage (V_SD = 1.6 V) supports reverse-current path during protection events.

DC Motor Control

Switching Power Supply

Use Scenario: H-bridge or half-bridge driver for 24 V brushed DC motors in automated valves and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side or high-side switching element handling bidirectional 15–25 A peak currents with PWM frequencies up to 20 kHz.

Use Value: Logic-level gate drive simplifies MCU interface; 0.050 Ω R_DS(on) limits I²R loss to <1.5 W at 18 A, reducing heatsink size.

Use Scenario: Primary-side switch in 60 W offline flyback converter with universal AC input.

IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz with 48 V reflected output voltage and unclamped inductive stress.

Use Value: 128 mJ avalanche energy rating absorbs leakage inductance spikes; 175 °C rating ensures reliability under sustained overload.

Solid-State Relay

Battery Protection Circuit

Use Scenario: Replacement for electromechanical relays in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Load switch controlling 24–48 V DC loads up to 30 A with zero-crossing–independent turn-on/turn-off.

Use Value: Fast switching (t_f = 56 ns) enables precise timing control; TO-220AB package allows direct PCB heatsinking without auxiliary hardware.

Use Scenario: Charge/discharge FET in lithium-ion battery pack protection IC (e.g., DW01A + 8205A configuration).

IC Role / Device Role / Timing Role: High-current pass transistor enabling >20 A continuous discharge while supporting overcurrent shutdown via sense resistor feedback.

Use Value: Low 0.050 Ω R_DS(on) minimizes voltage drop across FET pair; body diode forward voltage (V_SD = 1.6 V) supports reverse-current path during protection events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ34N	R_DS(on) = 0.028 Ω @ V_GS = 10 V but requires 10 V gate drive; V_GS(th) = 2–4 V - not logic-level compatible	Requires gate driver stage for 3.3 V/5 V MCU control; higher conduction loss at 4–5 V gate voltage	Select only when 10 V gate supply is available and lower R_DS(on) at 10 V is prioritized over logic-level simplicity
STP55NF06L	R_DS(on) = 0.018 Ω @ V_GS = 5 V; Q_g = 65 nC - higher drive demand; TO-220FP package with insulated tab	Higher peak current capability (55 A) but larger gate charge increases switching losses above 50 kHz	Prefer for high-efficiency 48 V systems needing sub-20 mΩ on-resistance at 5 V, accepting increased drive complexity

Compared with IRLZ34, IRFZ34N demands higher gate voltage for full enhancement and offers no logic-level advantage, while STP55NF06L delivers lower R_DS(on) at 5 V but with significantly higher Q_g, impacting high-frequency efficiency and driver sizing - IRLZ34 balances gate drive simplicity, thermal robustness, and mid-range conduction loss for cost-sensitive industrial switching.

Availability

IRLZ34 is available at Aetrix Electronics and suitable for DC motor control, switching power supplies, and solid-state relay designs requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant variants including IRLZ34PbF.

Supply support for IRLZ34 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency, ruggedness, and reliability.

The IRLZ34 belongs to Vishay's third-generation logic-level Power MOSFET family, engineered for high-current, low-voltage switching in commercial and industrial power conversion, motor control, and load management systems.

FAQ

What is the gate threshold voltage range for the IRLZ34?

The IRLZ34 has a gate-source threshold voltage (V_GS(th)) range of 1.0 V to 2.0 V at V_DS = V_GS and I_D = 250 μA. This logic-level specification ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs. The IRLZ34 achieves full enhancement at V_GS ≥ 4 V, delivering its rated R_DS(on) of 0.050 Ω.

Is the IRLZ34 suitable for avalanche-rated operation?

Yes, the IRLZ34 is characterized for single-pulse unclamped inductive switching with E_AS = 128 mJ at I_AS = 30 A (T_J = 25 °C). This rating applies under defined test conditions (V_DD = 25 V, L = 285 μH, R_g = 25 Ω) and confirms ruggedness against inductive energy transients - a key requirement for IRLZ34 use in motor drives and flyback converters.

What is the thermal resistance from junction to case for the IRLZ34?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for the IRLZ34 is 1.7 °C/W. This value is measured with the device mounted on a flat, greased heatsink surface and directly informs heatsink sizing - for example, at 88 W power dissipation, a 1.7 °C/W R_thJC implies a minimum 52 °C temperature rise from case to junction, assuming ideal case-to-heatsink interface.

Does the IRLZ34 have a built-in body diode, and what are its key parameters?

Yes, the IRLZ34 integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key diode parameters include continuous source-drain current I_S = 30 A, pulsed current I_SM = 110 A, forward voltage V_SD = 1.6 V at I_S = 30 A and T_J = 25 °C, and reverse recovery time t_rr = 120–180 ns under specified test conditions (I_F = 30 A, dI/dt = 100 A/μs).

What is the difference between IRLZ34 and IRLZ34PbF?

The IRLZ34PbF is the lead (Pb)-free, RoHS-compliant version of the IRLZ34, featuring SnAgCu solderable terminations. Electrically and thermally identical, both share the same TO-220AB package, absolute maximum ratings, and electrical specifications. The "PbF" suffix denotes compliance with EU RoHS Directive 2002/95/EC; the legacy IRLZ34 uses SnPb terminations and is not RoHS-compliant.

IRLZ34 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 18A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRLZ34 FAQ

1.How can I place an order for IRLZ34 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ34 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ34 reliable?

The price and inventory of IRLZ34 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ34 is usually 5 days.

3.What payment methods are accepted for IRLZ34?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ34 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ34?

IRLZ34 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ34 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ34?

For technical support, including IRLZ34 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ34 requirements.

6.How does Aetrix verify that IRLZ34 is sourced from the original manufacturer or authorized distributors?

All IRLZ34 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ34 meets industry standards.

7.What is the process for return or replacement of IRLZ34?

All IRLZ34 units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ34, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ34 part is unused and in its original packaging.

Return procedure for IRLZ34:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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