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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLZ34PBF-BE3

Name: IRLZ34PBF-BE3
Brand: Vishay Siliconix
SKU: IRLZ34PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ34PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRLZ34PBF-BE3.pdf

Description:: MOSFET N-CH 60V 30A TO220AB

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Product details

Overview

IRLZ34PBF-BE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220AB package, rated for 60 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 0.050 Ω R_DS(on) at V_GS = 5 V. It supports fast switching, 175 °C operation, and unclamped inductive avalanche energy up to 128 mJ - used in DC-DC converters, motor control stages, and high-efficiency power switches.

For engineers reviewing the IRLZ34PBF-BE3 datasheet, IRLZ34PBF-BE3 pinout, IRLZ34PBF-BE3 application, or IRLZ34PBF-BE3 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V, thermal resistance (R_thJC = 1.7 °C/W), and body diode recovery performance (t_rr = 120–180 ns).

Technical Context

This MOSFET employs third-generation planar silicon technology optimized for ruggedness and low conduction loss. Its dynamic dV/dt rating (4.5 V/ns) and specified avalanche capability enable reliable operation in inductive switching circuits without external snubbers.

The device features a monolithic body diode with Q_rr = 0.70–1.3 μC and t_rr = 120–180 ns at 30 A/100 A/μs, supporting synchronous rectification and freewheeling in buck and half-bridge topologies where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage for 24–48 V bus applications
R_DS(on) @ V_GS = 5 V	0.050 Ω - enables ≤1.5 W conduction loss at 18 A DC
Q_g	35 nC - determines gate drive power and switching speed with 6 Ω R_g
I_D (continuous, T_C = 25 °C)	30 A - supports high-current load switching with heatsink
t_rr	120–180 ns - defines minimum dead time in bridge configurations
E_AS	128 mJ - allows safe single-pulse inductive energy absorption without failure
T_J max	175 °C - permits operation in sealed enclosures or high ambient environments

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Thermal resistance R_thJC = 1.7 °C/W enables efficient heat transfer to heatsink via case-to-sink interface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Logic-level compatible (V_GS(th) = 1.0–2.0 V); requires ≤35 nC charge for full enhancement
D (Drain)	High-side power output	Internally connected to metal tab; electrically tied to heatsink - must be insulated if heatsink is grounded
S (Source)	Power return / reference node	Common return path for load current; defines local ground reference for gate drive

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4–5 V - eliminates need for gate driver ICs in microcontroller-driven systems
Ruggedized avalanche rating	128 mJ single-pulse E_AS - sustains inductive turn-off stress without derating or external clamping
Low R_DS(on) at low V_GS	0.070 Ω @ V_GS = 4 V - maintains efficiency in 3.3 V or 5 V logic-controlled power stages
Fast body diode recovery	t_rr = 120–180 ns with Q_rr = 0.70–1.3 μC - reduces switching losses and ringing in freewheeling paths
High-temperature operation	Rated to 175 °C junction temperature - supports automotive under-hood and industrial motor drive deployments

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: Step-down regulation from 48 V battery to 12 V for vehicle accessories. IC Role / Device Role / Timing Role: High-side synchronous switch in continuous conduction mode (CCM) topology. Use Value: Low R_DS(on) (0.050 Ω) minimizes conduction loss; fast t_rr enables tight dead-time control and reduces shoot-through risk.	Use Scenario: H-bridge control of 24 V, 15 A brushed motors in industrial actuators. IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode freewheeling. Use Value: Logic-level gate ensures direct MCU GPIO drive; 175 °C rating supports enclosed motor housing environments.
LED Constant-Current Driver	AC-DC Secondary-Side Switch
Use Scenario: High-power LED string dimming using PWM-controlled constant-current sink. IC Role / Device Role / Timing Role: Low-side current-regulating switch modulated at 1–20 kHz. Use Value: 30 A ID rating accommodates transient surges; low Q_g (35 nC) enables clean PWM edges without gate oscillation.	Use Scenario: Synchronous rectification in 36 W offline flyback adapter secondary side. IC Role / Device Role / Timing Role: Replacement for Schottky diode to improve efficiency at light loads. Use Value: Body diode V_SD = 1.6 V at 30 A enables low forward drop; Q_rr < 1.3 μC limits reverse recovery loss during zero-crossing.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V battery to 12 V for vehicle accessories.

IC Role / Device Role / Timing Role: High-side synchronous switch in continuous conduction mode (CCM) topology.

Use Value: Low R_DS(on) (0.050 Ω) minimizes conduction loss; fast t_rr enables tight dead-time control and reduces shoot-through risk.

Use Scenario: H-bridge control of 24 V, 15 A brushed motors in industrial actuators.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode freewheeling.

Use Value: Logic-level gate ensures direct MCU GPIO drive; 175 °C rating supports enclosed motor housing environments.

LED Constant-Current Driver

AC-DC Secondary-Side Switch

Use Scenario: High-power LED string dimming using PWM-controlled constant-current sink.

IC Role / Device Role / Timing Role: Low-side current-regulating switch modulated at 1–20 kHz.

Use Value: 30 A ID rating accommodates transient surges; low Q_g (35 nC) enables clean PWM edges without gate oscillation.

Use Scenario: Synchronous rectification in 36 W offline flyback adapter secondary side.

IC Role / Device Role / Timing Role: Replacement for Schottky diode to improve efficiency at light loads.

Use Value: Body diode V_SD = 1.6 V at 30 A enables low forward drop; Q_rr < 1.3 μC limits reverse recovery loss during zero-crossing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 0.028 Ω @ V_GS = 10 V only; V_GS(th) = 2–4 V - not logic-level	Requires 10 V gate drive; unsuitable for 3.3 V/5 V MCU direct drive	Select only when gate driver provides ≥10 V and lower R_DS(on) justifies added complexity
STP55NF06L	R_DS(on) = 0.018 Ω @ V_GS = 5 V; higher Q_g = 95 nC - slower switching	Better conduction loss but higher gate drive demand and EMI risk	Prefer for low-frequency, high-current applications where switching loss is secondary

Compared with IRFZ44NPBF and STP55NF06L, the IRLZ34PBF-BE3 uniquely balances logic-level drivability, moderate R_DS(on), and controlled Q_g - making it optimal for cost-sensitive, microcontroller-based power stages requiring no external level-shifting or high-current gate drivers.

Availability

IRLZ34PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, LED drivers, and industrial power supplies requiring stable component supply and RoHS-compliant, halogen-free packaging.

Supply support for IRLZ34PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, founded in 1962 and headquartered in Malvern, PA.

The IRLZ34PBF-BE3 belongs to Vishay Siliconix's logic-level power MOSFET family, engineered for high-efficiency, low-voltage switching in space-constrained and thermally demanding applications such as portable power tools, automotive subsystems, and consumer power adapters.

FAQ

What is the gate threshold voltage range for IRLZ34PBF-BE3?

The IRLZ34PBF-BE3 has a gate-source threshold voltage V_GS(th) of 1.0–2.0 V at I_D = 250 μA. This logic-level specification ensures full enhancement with standard 3.3 V or 5 V microcontroller outputs. The IRLZ34PBF-BE3 achieves R_DS(on) ≤ 0.070 Ω even at V_GS = 4 V, enabling robust operation across process and temperature variation.

Does IRLZ34PBF-BE3 support avalanche energy handling?

Yes, the IRLZ34PBF-BE3 is rated for 128 mJ single-pulse unclamped inductive avalanche energy (E_AS) under defined test conditions (V_DD = 25 V, I_AS = 30 A). This ruggedness allows safe operation in relay driving, solenoid control, and other inductive load switching without external protection components - a key reliability feature confirmed in Vishay's S21-1045-Rev. D datasheet.

What is the thermal resistance from junction to case for IRLZ34PBF-BE3?

The maximum junction-to-case thermal resistance (R_thJC) of the IRLZ34PBF-BE3 is 1.7 °C/W. This value applies to the drain-connected TO-220AB package tab and assumes proper mechanical mounting with thermal grease on a flat heatsink surface. The low R_thJC enables efficient heat extraction - critical for sustaining 30 A continuous current at elevated ambient temperatures.

Is IRLZ34PBF-BE3 RoHS-compliant and halogen-free?

Yes, the IRLZ34PBF-BE3 is both RoHS-compliant and halogen-free, as indicated by the "-BE3" suffix per Vishay's ordering nomenclature. This designation confirms lead-free terminations and absence of brominated flame retardants (BFRs) and chlorine-based compounds - meeting IPC-1752A material declaration requirements for environmentally regulated electronics manufacturing.

How does the body diode performance of IRLZ34PBF-BE3 compare to standard rectifiers?

The IRLZ34PBF-BE3 integrates a fast-recovery body diode with t_rr = 120–180 ns and Q_rr = 0.70–1.3 μC at 30 A, outperforming general-purpose 1N540x diodes (t_rr > 2 μs) in switching applications. While not as fast as dedicated ultrafast diodes, its body diode enables functional synchronous rectification in low-frequency DC-DC stages - verified in Vishay's fig. 7 and fig. 12 test data for the IRLZ34PBF-BE3.

IRLZ34PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 50mOhm @ 18A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRLZ34PBF-BE3 FAQ

1.How can I place an order for IRLZ34PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ34PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ34PBF-BE3 reliable?

The price and inventory of IRLZ34PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ34PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRLZ34PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ34PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ34PBF-BE3?

IRLZ34PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ34PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ34PBF-BE3?

For technical support, including IRLZ34PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ34PBF-BE3 requirements.

6.How does Aetrix verify that IRLZ34PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRLZ34PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ34PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRLZ34PBF-BE3?

All IRLZ34PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ34PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ34PBF-BE3 part is unused and in its original packaging.

Return procedure for IRLZ34PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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