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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLZ34SPBF

Name: IRLZ34SPBF
Brand: Vishay Siliconix
SKU: IRLZ34SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ34SPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLZ34SPBF.pdf

Description:: MOSFET N-CH 60V 30A TO263

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Product details

Overview

IRLZ34SPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 60 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 0.05 Ω R_DS(on) at V_GS = 5 V. It features fully avalanche-rated operation, 175 °C maximum junction temperature, and fast switching with 35 nC total gate charge - optimized for high-efficiency DC-DC converters, motor drives, and solid-state relay replacements.

For engineers reviewing the IRLZ34SPBF datasheet, IRLZ34SPBF pinout, IRLZ34SPBF application, or IRLZ34SPBF equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low on-resistance at 5 V drive, surface-mount D2PAK thermal performance (R_thJC = 1.7 °C/W), and unclamped inductive switching robustness (E_AS = 128 mJ).

Technical Context

This MOSFET employs Vishay's third-generation silicon process to achieve ultra-low specific on-resistance while maintaining rugged avalanche capability. Its gate threshold voltage range (1.0–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, and its body diode exhibits t_rr = 120–180 ns and Q_rr = 700–1300 nC under defined conditions.

The device operates within -55 to +175 °C junction temperature range and supports PCB-mount power dissipation up to 3.7 W (FR-4, 1" square). Thermal resistance from junction-to-case is 1.7 °C/W, enabling high-current operation when heatsinked via the exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V bus systems with 20 % margin against transients
R_DS(on) @ V_GS = 5 V	0.05 Ω - enables <1 W conduction loss at 18 A DC, critical for thermally constrained layouts
I_D continuous @ T_C = 25 °C	30 A - delivers high current density in surface-mount form without through-hole mounting
Q_g total	35 nC - determines gate driver strength requirement; compatible with medium-speed logic-level drivers
E_AS	128 mJ - withstands repetitive unclamped inductive energy spikes in motor commutation or solenoid control
T_J max	+175 °C - allows operation in high-ambient environments such as automotive engine bays or industrial enclosures
t_rr (body diode)	120–180 ns - limits reverse recovery losses in synchronous rectification and H-bridge freewheeling

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection; 3-pin surface-mount outline conforming to JEDEC TO-263AB standard; recommended minimum PCB pad dimensions per Vishay AN826.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts logic-level input (1–2 V threshold); requires <35 nC charge for full enhancement; sensitive to ESD
D (Drain)	High-side power terminal	Connected to exposed copper thermal pad; carries full load current and dissipates heat directly to PCB heatsink
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; forms source node of internal body diode

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.0–5.0 V, eliminating need for gate boosters in 3.3 V/5 V microcontroller systems
Fully avalanche rated	Guaranteed single-pulse avalanche energy of 128 mJ enables robustness in inductive switching without external snubbers
Low R_DS(on) × Q_g figure-of-merit	1.75 Ω·nC - balances conduction and switching losses for high-frequency (<100 kHz) SMPS designs
Surface-mount D2PAK package	Provides lowest R_thJC (1.7 °C/W) among standard SMT power packages, supporting >30 A current with PCB heatsinking
175 °C operating temperature	Enables use in sealed or high-ambient environments where thermal derating of lower-T_J parts would reduce usable current

Applications

Brushless DC Motor Control	Industrial DC-DC Converters
Use Scenario: Driving low-voltage BLDC phases in fans, pumps, and small actuators using 3-phase inverter topology. IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation; handles bidirectional current with integrated body diode freewheeling. Use Value: 0.05 Ω R_DS(on) minimizes I²R losses during high-duty-cycle operation; fast t_rr reduces cross-conduction risk during PWM transitions.	Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 12 V → 5 V/3.3 V flyback or forward converters. IC Role / Device Role / Timing Role: Power switch controlling energy transfer; body diode conducts during off-time in non-synchronous mode. Use Value: Logic-level gate enables direct drive from PWM controller outputs; 128 mJ E_AS tolerates leakage inductance spikes without clamping circuits.
Solid-State Relay Replacement	Automotive Body Control Modules
Use Scenario: Replacing electromechanical relays in lighting, HVAC, and power distribution modules requiring silent, bounce-free switching. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) load switch controlled by MCU GPIO; body diode handles inductive kickback from lamps or solenoids. Use Value: 30 A continuous rating supports 200–300 W resistive loads; 175 °C T_J rating ensures reliability in enclosed fuse boxes.	Use Scenario: Load switching for interior lighting, window lift motors, and seat controls in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Protected high-side or low-side switch interfacing between microcontroller and 12 V battery rail. Use Value: Avalanche rating absorbs load dump transients; RoHS-compliant Pb-free termination meets automotive qualification requirements.

Brushless DC Motor Control

Industrial DC-DC Converters

Use Scenario: Driving low-voltage BLDC phases in fans, pumps, and small actuators using 3-phase inverter topology.

IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation; handles bidirectional current with integrated body diode freewheeling.

Use Value: 0.05 Ω R_DS(on) minimizes I²R losses during high-duty-cycle operation; fast t_rr reduces cross-conduction risk during PWM transitions.

Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 12 V → 5 V/3.3 V flyback or forward converters.

IC Role / Device Role / Timing Role: Power switch controlling energy transfer; body diode conducts during off-time in non-synchronous mode.

Use Value: Logic-level gate enables direct drive from PWM controller outputs; 128 mJ E_AS tolerates leakage inductance spikes without clamping circuits.

Solid-State Relay Replacement

Automotive Body Control Modules

Use Scenario: Replacing electromechanical relays in lighting, HVAC, and power distribution modules requiring silent, bounce-free switching.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) load switch controlled by MCU GPIO; body diode handles inductive kickback from lamps or solenoids.

Use Value: 30 A continuous rating supports 200–300 W resistive loads; 175 °C T_J rating ensures reliability in enclosed fuse boxes.

Use Scenario: Load switching for interior lighting, window lift motors, and seat controls in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Protected high-side or low-side switch interfacing between microcontroller and 12 V battery rail.

Use Value: Avalanche rating absorbs load dump transients; RoHS-compliant Pb-free termination meets automotive qualification requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPbF	Higher R_DS(on) (0.028 Ω @ V_GS = 10 V), not logic-level (V_GS(th) = 2–4 V), TO-220 package	Requires 10 V gate drive; unsuitable for 3.3 V logic; higher thermal resistance than D2PAK	Select only if 10 V gate infrastructure exists and board space permits through-hole mounting
STP55NF06L	Similar logic-level drive (V_GS(th) = 1–2.5 V), R_DS(on) = 0.018 Ω @ 5 V, but TO-220FP package and lower E_AS (95 mJ)	Larger footprint, lower avalanche robustness; less suitable for unclamped inductive loads	Prefer for cost-sensitive, non-avalanche-critical 5 V logic applications where thermal demand is moderate

Compared with IRLZ34SPBF, IRFZ44NPbF demands higher gate voltage and offers inferior thermal performance in SMT layouts, while STP55NF06L trades avalanche margin for lower on-resistance but lacks the D2PAK's PCB thermal efficiency - making IRLZ34SPBF optimal for compact, high-reliability logic-driven power switching.

Availability

IRLZ34SPBF is available at Aetrix Electronics and suitable for brushless DC motor control, industrial DC-DC converters, and solid-state relay replacement requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRLZ34SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRLZ34SPBF belongs to Vishay's logic-level power MOSFET product line, engineered for direct interface with low-voltage digital controllers in space-constrained, thermally demanding applications such as automotive body electronics and industrial automation.

FAQ

What is the gate threshold voltage range for IRLZ34SPBF?

The IRLZ34SPBF has a gate-source threshold voltage (V_GS(th)) range of 1.0 V to 2.0 V at T_J = 25 °C and I_D = 250 μA. This logic-level specification ensures full enhancement with standard 3.3 V or 5 V microcontroller outputs, eliminating the need for level-shifting circuitry in the IRLZ34SPBF design.

Is IRLZ34SPBF suitable for avalanche-prone circuits like motor drives?

Yes, IRLZ34SPBF is fully avalanche rated with a guaranteed single-pulse avalanche energy (E_AS) of 128 mJ under specified test conditions (V_DD = 25 V, I_AS = 30 A). This makes the IRLZ34SPBF appropriate for inductive switching applications such as BLDC motor phase control where voltage spikes from back-EMF must be safely absorbed.

What package type does IRLZ34SPBF use, and how does it impact thermal performance?

IRLZ34SPBF uses the D2PAK (TO-263) surface-mount package with an exposed drain pad. Its junction-to-case thermal resistance (R_thJC) is 1.7 °C/W, significantly lower than TO-220 or DPAK alternatives - enabling efficient heat transfer to the PCB and supporting 30 A continuous current when properly heatsinked, a key advantage of the IRLZ34SPBF in high-power-density designs.

Does IRLZ34SPBF have a built-in body diode, and what are its key parameters?

Yes, IRLZ34SPBF integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key diode parameters include forward voltage V_SD = 1.6 V at I_S = 30 A and T_J = 25 °C, reverse recovery time t_rr = 120–180 ns, and reverse recovery charge Q_rr = 700–1300 nC - all critical for evaluating freewheeling behavior in H-bridge and synchronous rectifier topologies using the IRLZ34SPBF.

What is the maximum continuous drain current rating for IRLZ34SPBF at elevated temperatures?

The IRLZ34SPBF is rated for 30 A continuous drain current at case temperature T_C = 25 °C, derating linearly at 0.59 W/°C above that point. At T_C = 100 °C, the maximum continuous current drops to 21 A. This derating curve - documented in the IRLZ34SPBF datasheet Figure 9 - must be applied when estimating usable current in thermally constrained PCB layouts.

IRLZ34SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 18A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRLZ34SPBF FAQ

1.How can I place an order for IRLZ34SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ34SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ34SPBF reliable?

The price and inventory of IRLZ34SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ34SPBF is usually 5 days.

3.What payment methods are accepted for IRLZ34SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ34SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ34SPBF?

IRLZ34SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ34SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ34SPBF?

For technical support, including IRLZ34SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ34SPBF requirements.

6.How does Aetrix verify that IRLZ34SPBF is sourced from the original manufacturer or authorized distributors?

All IRLZ34SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ34SPBF meets industry standards.

7.What is the process for return or replacement of IRLZ34SPBF?

All IRLZ34SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ34SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ34SPBF part is unused and in its original packaging.

Return procedure for IRLZ34SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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