Vishay Siliconix IRLZ44PBF-BE3
- Part No.:
- IRLZ44PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRLZ44PBF-BE3.pdf
- Description:
- MOSFET N-CH 60V 50A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:542
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Product details
Overview
IRLZ44PBF-BE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220AB package, rated for 60 V VDS, 50 A continuous drain current at TC = 25 °C, and 0.028 Ω RDS(on) at VGS = 5 V. It supports fast switching, operates up to 175 °C junction temperature, and is optimized for DC motor control, power supplies, and solid-state relay replacement.
For engineers reviewing the IRLZ44PBF-BE3 datasheet, IRLZ44PBF-BE3 pinout, IRLZ44PBF-BE3 application, or IRLZ44PBF-BE3 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) at 4–5 V, avalanche energy rating (EAS = 400 mJ), and TO-220AB thermal performance (RthJC = 1.0 °C/W).
Technical Context
This MOSFET uses third-generation planar silicon technology with ruggedized die design enabling high dV/dt immunity (4.5 V/ns) and unclamped inductive switching capability. Its gate charge profile (Qg = 66 nC, Qgd = 43 nC) supports efficient hard-switching in 30–48 V systems with moderate gate drive strength.
The integrated body diode features trr = 130–180 ns and Qrr = 0.84–1.3 μC at IF = 51 A, dI/dt = 100 A/μs, making it suitable for freewheeling in non-synchronous buck or H-bridge topologies where reverse recovery behavior impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage in DC or clamped inductive circuits |
| RDS(on) @ VGS = 5 V | 0.028 Ω - Enables <1.5 W conduction loss at 31 A, simplifying heatsinking |
| Qg | 66 nC - Requires ~3.3 V drive with 20 Ω gate resistor for ~1.3 µs turn-on delay |
| ID (continuous, TC = 25 °C) | 50 A - Sustained current capability with adequate heatsink and case mounting |
| EAS | 400 mJ - Supports single-pulse inductive energy absorption without failure |
| TJ max | 175 °C - Enables operation in sealed enclosures or high ambient industrial environments |
| VGS(th) | 1.0–2.0 V - Fully enhanced by standard 3.3 V or 5 V microcontroller GPIO |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.0 °C/W junction-to-case thermal resistance, and flat mounting surface requiring thermal grease.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Logic-level compatible input; threshold 1.0–2.0 V, max ±10 V rating |
| Drain (D) | High-side current path | Internally connected to metal tab; electrically exposed for heatsinking |
| Source (S) | Return path / reference node | Low-impedance connection to PCB ground plane; defines VGS reference |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced from 3.3 V or 5 V MCU outputs-no level-shifting required |
| Ruggedized dV/dt rating | 4.5 V/ns peak di/dt immunity prevents spurious turn-on in noisy inductive loads |
| Low RDS(on) at 4 V | 0.039 Ω at VGS = 4 V enables robust operation even with marginal gate drive margin |
| 175 °C maximum junction temperature | Supports extended lifetime in thermally constrained industrial enclosures without derating |
| Fast switching with low Qgd/Qg | Qgd = 43 nC / Qg = 66 nC ratio improves Miller immunity and reduces switching loss |
Applications
| DC Motor Control | Switching Power Supply |
|---|---|
Use Scenario: Bidirectional 24–48 V brushed DC motor driver in automated gate operators. IC Role / Device Role / Timing Role: High-side or low-side switch controlling motor direction and braking via PWM. Use Value: Logic-level gate drive eliminates external driver ICs; 50 A rating supports stall currents up to 200 A pulsed. |
Use Scenario: Primary-side synchronous rectifier or secondary-side switch in 48 V telecom PSUs. IC Role / Device Role / Timing Role: Main power switch in non-isolated buck converter operating at 100–500 kHz. Use Value: Low Qg and fast tr/tf reduce switching losses; 0.028 Ω RDS(on) minimizes conduction loss at full load. |
| Solid-State Relay Replacement | H-Bridge Inverter Stage |
Use Scenario: Industrial PLC output module replacing electromechanical relays in HVAC zone control. IC Role / Device Role / Timing Role: Load switch handling resistive and inductive loads up to 1 kW. Use Value: Avalanche-rated (400 mJ) withstands inductive kickback; TO-220AB allows direct heatsink mounting with no isolation barrier needed. |
Use Scenario: Half-bridge leg in 3-phase BLDC motor controller for e-bike or power tools. IC Role / Device Role / Timing Role: Low-side switch paired with complementary high-side device in 6-step commutation. Use Value: Body diode trr = 130–180 ns ensures clean freewheeling during dead-time; 175 °C rating accommodates high ambient under motor housing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFZ44NPbF | RDS(on) = 0.028 Ω @ VGS = 10 V only; VGS(th) = 2.0–4.0 V - requires 10 V gate drive for full enhancement | Not logic-level; unsuitable for direct 3.3 V/5 V MCU drive without buffer stage | Select IRLZ44PBF-BE3 when gate drive voltage ≤ 5 V; choose IRFZ44NPbF only if 10 V rail is available and lower cost is critical |
| STP55NF06L | RDS(on) = 0.018 Ω @ VGS = 5 V; Qg = 85 nC - lower on-resistance but higher gate charge increases switching loss | Better conduction efficiency at high current, but slower switching limits >200 kHz use | Prefer IRLZ44PBF-BE3 for balanced switching/conduction trade-off in 50–200 kHz designs; STP55NF06L suits low-frequency, high-current applications |
Compared with IRFZ44NPbF and STP55NF06L, the IRLZ44PBF-BE3 uniquely delivers logic-level operation with competitive RDS(on) and gate charge, making it optimal for space-constrained, low-voltage-drive embedded power stages where simplicity and thermal margin are prioritized over absolute minimum on-resistance.
Availability
IRLZ44PBF-BE3 is available at Aetrix Electronics and suitable for DC motor drives, industrial power supplies, solid-state relay modules, and H-bridge inverters requiring stable component supply, RoHS-compliant lead-free/halogen-free construction, and long-term industrial lifecycle support.
Supply support for IRLZ44PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.
The IRLZ44PBF-BE3 belongs to Vishay's logic-level power MOSFET product line, engineered for industrial and commercial applications demanding simple gate drive, high avalanche robustness, and stable operation across wide temperature ranges.
FAQ
What is the maximum continuous drain current for IRLZ44PBF-BE3 at 100 °C case temperature?
The IRLZ44PBF-BE3 supports 36 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and must be validated against actual heatsink performance and ambient conditions in the final layout. The IRLZ44PBF-BE3 maintains safe operation up to 175 °C junction temperature, allowing flexibility in thermal design.
Does IRLZ44PBF-BE3 have a built-in body diode, and what are its key recovery characteristics?
Yes, the IRLZ44PBF-BE3 integrates a parasitic body diode inherent to its N-channel MOSFET structure. Its reverse recovery time (trr) is 130–180 ns at TJ = 25 °C, IF = 51 A, and dI/dt = 100 A/μs, with Qrr = 0.84–1.3 μC. These values are critical for freewheeling behavior in inductive switching circuits and directly impact EMI and efficiency in H-bridge or buck converters using the IRLZ44PBF-BE3.
Is IRLZ44PBF-BE3 suitable for direct drive from a 3.3 V microcontroller GPIO pin?
Yes, the IRLZ44PBF-BE3 is explicitly designed for logic-level operation with VGS(th) = 1.0–2.0 V and specified RDS(on) down to VGS = 4 V. A 3.3 V GPIO can fully enhance the device, though RDS(on) rises to ~0.045 Ω (interpolated from datasheet curves). For minimal conduction loss, 5 V drive is recommended-but 3.3 V remains functional for many medium-current applications using the IRLZ44PBF-BE3.
What is the avalanche energy rating of IRLZ44PBF-BE3, and how is it tested?
The IRLZ44PBF-BE3 has a single-pulse avalanche energy rating (EAS) of 400 mJ, measured under standardized unclamped inductive switching conditions: VDD = 25 V, starting TJ = 25 °C, L = 179 μH, Rg = 25 Ω, and IAS = 51 A. This rating confirms the device's ability to absorb inductive energy without failure during transient overvoltage events, a key reliability feature for the IRLZ44PBF-BE3 in motor and relay-driving applications.
How does the TO-220AB package of IRLZ44PBF-BE3 affect thermal management?
The TO-220AB package of the IRLZ44PBF-BE3 provides a low 1.0 °C/W junction-to-case (RthJC) thermal resistance and a flat, greased mounting surface. Its metal tab is internally connected to the drain, enabling direct heatsink attachment. Proper torque (1.1 N·m) and thermal interface material are essential to achieve rated power dissipation (150 W at TC = 25 °C); neglecting mounting quality degrades the IRLZ44PBF-BE3's thermal performance significantly.
IRLZ44PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 31A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRLZ44PBF-BE3 FAQ
1.How can I place an order for IRLZ44PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLZ44PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLZ44PBF-BE3 reliable?
The price and inventory of IRLZ44PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ44PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRLZ44PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ44PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLZ44PBF-BE3?
IRLZ44PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLZ44PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLZ44PBF-BE3?
For technical support, including IRLZ44PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ44PBF-BE3 requirements.
6.How does Aetrix verify that IRLZ44PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRLZ44PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ44PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRLZ44PBF-BE3?
All IRLZ44PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ44PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLZ44PBF-BE3 part is unused and in its original packaging.
Return procedure for IRLZ44PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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