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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLZ44STRRPBF

Name: IRLZ44STRRPBF
Brand: Vishay Siliconix
SKU: IRLZ44STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLZ44STRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRLZ44STRRPBF.pdf

Description:: MOSFET N-CH 60V 50A D2PAK

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Product details

Overview

IRLZ44STRRPBF from Vishay Siliconix is a logic-level N-channel Power MOSFET in D2PAK (TO-263) package, rated for 60 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 0.028 Ω R_DS(on) at V_GS = 5.0 V. It operates up to 175 °C junction temperature and delivers fast switching with 66 nC total gate charge - used in DC-DC converters, motor drives, and high-current load switching.

For engineers reviewing the IRLZ44STRRPBF datasheet, IRLZ44STRRPBF pinout, IRLZ44STRRPBF application, or IRLZ44STRRPBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V, avalanche energy rating (E_AS = 400 mJ), thermal performance on PCB mount (R_thJA = 40 °C/W), and D2PAK mechanical footprint constraints.

Technical Context

This MOSFET employs third-generation trench-gate silicon technology optimized for low conduction loss and fast switching in surface-mount power applications. Its dynamic dV/dt rating (4.5 V/ns) and unclamped inductive switching capability support robust operation in hard-switched topologies.

The device integrates a body diode with 130–180 ns reverse recovery time (t_rr) and 0.84–1.3 μC reverse recovery charge (Q_rr), enabling moderate-frequency synchronous rectification and freewheeling in buck or half-bridge configurations without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage compatible with 48 V bus systems and industrial 24–48 V DC supplies
R_DS(on) @ V_GS = 5 V	0.028 Ω - enables ≤1.5 W conduction loss at 7.3 A RMS, suitable for high-efficiency 10–50 A switch-mode loads
Q_g	66 nC - determines gate driver current requirement (~1.3 A peak for 50 ns turn-on with 4.6 Ω R_g)
I_D (continuous, T_C = 25 °C)	50 A - defines maximum steady-state current when mounted on heatsink or thermally enhanced PCB
E_AS	400 mJ - supports single-pulse unclamped inductive energy handling in motor control or relay driving
T_J range	−55 to +175 °C - allows operation in under-hood automotive, industrial motor controllers, and sealed power supplies
R_thJA (PCB mount)	40 °C/W - sets thermal rise of 150 °C at 3.7 W dissipation on 1" FR-4 PCB, guiding layout copper area design

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-terminal configuration (G, D, S); standard JEDEC outline; thermal pad soldered to PCB copper pour for heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives logic-level voltage (≥4 V) to fully enhance channel; requires <100 nA leakage current drive
D (Drain)	High-side power terminal	Connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to system ground
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; internal source inductance (L_S = 7.5 nH) affects switching ringing

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.0 V (R_DS(on) ≤ 0.039 Ω), enabling direct interface with 3.3 V/5 V microcontrollers and gate drivers
Dynamic dV/dt immunity	Rated 4.5 V/ns - suppresses false triggering during high dv/dt transients in inductive load switching
175 °C operating temperature	Enables use in sealed enclosures or high-ambient environments without derating below full current capability
Fast switching performance	Turn-on delay 17 ns + rise time 230 ns; fall time 110 ns - supports >100 kHz PWM in SMPS and motor control
Avalanche-rated	Specified single-pulse E_AS = 400 mJ - eliminates need for external snubbers in inductive load commutation

Applications

Brushless DC Motor Control	Industrial DC-DC Converters
Use Scenario: Half-bridge high-side switch in 24–48 V BLDC inverter driving fans, pumps, or compressors. IC Role / Device Role / Timing Role: Power switching element controlling phase current flow; synchronized to PWM carrier at 10–25 kHz. Use Value: Low R_DS(on) reduces conduction loss by >30% vs. legacy 0.05 Ω MOSFETs; logic-level gate simplifies gate driver IC selection.	Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 48 V input, 12 V output flyback or forward converter. IC Role / Device Role / Timing Role: High-current unidirectional power switch in primary-side active clamp or secondary-side synchronous rectification path. Use Value: 66 nC Q_g enables efficient 200 kHz operation with minimal gate drive loss; 175 °C rating supports compact transformer-coupled designs.
High-Current Load Switching	Automotive Body Control Modules
Use Scenario: Solid-state replacement for electromechanical relays in battery-powered equipment requiring 30–50 A load switching. IC Role / Device Role / Timing Role: Low-side or high-side power switch controlled via microcontroller GPIO with optional current sensing. Use Value: 50 A continuous rating at 25 °C case temperature eliminates need for parallel devices; integrated body diode handles inductive kickback.	Use Scenario: Window lift, seat actuator, or lighting control switch in 12 V automotive systems with transient protection requirements. IC Role / Device Role / Timing Role: Protected high-side load switch managing inductive and capacitive loads per LIN/CAN subsystem timing constraints. Use Value: 4.5 V/ns dV/dt rating withstands load dump transients; −55 to +175 °C range meets AEC-Q101 ambient requirements for under-dash mounting.

Brushless DC Motor Control

Industrial DC-DC Converters

Use Scenario: Half-bridge high-side switch in 24–48 V BLDC inverter driving fans, pumps, or compressors.

IC Role / Device Role / Timing Role: Power switching element controlling phase current flow; synchronized to PWM carrier at 10–25 kHz.

Use Value: Low R_DS(on) reduces conduction loss by >30% vs. legacy 0.05 Ω MOSFETs; logic-level gate simplifies gate driver IC selection.

Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 48 V input, 12 V output flyback or forward converter.

IC Role / Device Role / Timing Role: High-current unidirectional power switch in primary-side active clamp or secondary-side synchronous rectification path.

Use Value: 66 nC Q_g enables efficient 200 kHz operation with minimal gate drive loss; 175 °C rating supports compact transformer-coupled designs.

High-Current Load Switching

Automotive Body Control Modules

Use Scenario: Solid-state replacement for electromechanical relays in battery-powered equipment requiring 30–50 A load switching.

IC Role / Device Role / Timing Role: Low-side or high-side power switch controlled via microcontroller GPIO with optional current sensing.

Use Value: 50 A continuous rating at 25 °C case temperature eliminates need for parallel devices; integrated body diode handles inductive kickback.

Use Scenario: Window lift, seat actuator, or lighting control switch in 12 V automotive systems with transient protection requirements.

IC Role / Device Role / Timing Role: Protected high-side load switch managing inductive and capacitive loads per LIN/CAN subsystem timing constraints.

Use Value: 4.5 V/ns dV/dt rating withstands load dump transients; −55 to +175 °C range meets AEC-Q101 ambient requirements for under-dash mounting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPbF	R_DS(on) = 0.028 Ω @ V_GS = 10 V only; V_GS(th) = 2–4 V; not logic-level optimized	Requires 10 V gate drive; unsuitable for direct 3.3 V MCU interface without level-shifting	Select IRLZ44STRRPBF when gate drive voltage is limited to ≤5 V and low-threshold turn-on is mandatory
STP55NF06L	R_DS(on) = 0.018 Ω @ V_GS = 5 V; higher Q_g = 85 nC; TO-220 package	Larger footprint and lower thermal efficiency on PCB; better conduction but slower switching	Choose IRLZ44STRRPBF for space-constrained D2PAK layouts where 0.028 Ω R_DS(on) and 66 nC Q_g balance efficiency and size

Compared with IRFZ44NPbF and STP55NF06L, the IRLZ44STRRPBF uniquely combines logic-level gate compatibility, D2PAK thermal performance, and 400 mJ avalanche ruggedness - making it optimal for compact, high-current, low-voltage-gate designs where PCB real estate and drive simplicity are critical.

Availability

IRLZ44STRRPBF is available at Aetrix Electronics and suitable for brushless DC motor control, industrial DC-DC converters, and high-current load switching requiring stable component supply across production volumes and extended lifecycle planning.

Supply support for IRLZ44STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRLZ44STRRPBF belongs to Vishay's third-generation logic-level Power MOSFET family, engineered for high-current, surface-mount switching in space-constrained power conversion and motor drive systems.

FAQ

What is the gate threshold voltage range for IRLZ44STRRPBF?

The IRLZ44STRRPBF has a gate-source threshold voltage (V_GS(th)) of 1.0 V minimum to 2.0 V maximum at I_D = 250 μA. This ensures reliable enhancement with 3.3 V or 5 V logic signals, distinguishing it from standard MOSFETs requiring ≥3 V minimum for partial turn-on. The IRLZ44STRRPBF achieves full R_DS(on) specification at V_GS = 4.0 V.

Does IRLZ44STRRPBF support avalanche operation, and what is its rated energy?

Yes, the IRLZ44STRRPBF is rated for single-pulse unclamped inductive switching with E_AS = 400 mJ at T_J = 25 °C. This is validated per test condition V_DD = 25 V, I_AS = 51 A, and L = 179 μH. The IRLZ44STRRPBF does not specify repetitive avalanche rating, so designers must limit operation to single-event conditions or implement external clamping for repeated stress.

What is the thermal resistance from junction to ambient for IRLZ44STRRPBF in PCB mount configuration?

The IRLZ44STRRPBF has a maximum junction-to-ambient thermal resistance (R_thJA) of 40 °C/W when mounted on a 1" square FR-4 PCB - significantly lower than the 62 °C/W rating for still-air conditions. This value assumes standard copper pour layout per Vishay's recommended pads; actual performance depends on PCB copper area, layer count, and airflow. The IRLZ44STRRPBF's D2PAK drain tab must be soldered to thermal copper for this rating to apply.

Can IRLZ44STRRPBF replace IRLZ44N in existing designs?

Yes, the IRLZ44STRRPBF is a tape-and-reel variant of the same die and package as IRLZ44N, sharing identical electrical specifications, pinout, and thermal characteristics. Both use D2PAK (TO-263) packaging and have identical V_DS, R_DS(on), Q_g, and avalanche ratings. The IRLZ44STRRPBF differs only in packaging format (tape-and-reel) and RoHS compliance status - confirming full functional and mechanical interchangeability in production assembly.

What are the body diode characteristics of IRLZ44STRRPBF?

The IRLZ44STRRPBF integrates a fast-recovery body diode with V_SD = 2.5 V max at I_S = 51 A and T_J = 25 °C, t_rr = 130–180 ns, and Q_rr = 0.84–1.3 μC. These parameters enable use in freewheeling paths without external diodes in low-to-moderate frequency (<100 kHz) topologies. The IRLZ44STRRPBF body diode is not rated for continuous conduction beyond its 50 A source-drain current limit.

IRLZ44STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 31A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 3300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRLZ44STRRPBF FAQ

1.How can I place an order for IRLZ44STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLZ44STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLZ44STRRPBF reliable?

The price and inventory of IRLZ44STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLZ44STRRPBF is usually 5 days.

3.What payment methods are accepted for IRLZ44STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLZ44STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLZ44STRRPBF?

IRLZ44STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLZ44STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLZ44STRRPBF?

For technical support, including IRLZ44STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLZ44STRRPBF requirements.

6.How does Aetrix verify that IRLZ44STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLZ44STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLZ44STRRPBF meets industry standards.

7.What is the process for return or replacement of IRLZ44STRRPBF?

All IRLZ44STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLZ44STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLZ44STRRPBF part is unused and in its original packaging.

Return procedure for IRLZ44STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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