Infineon Technologies ISC010N06NM5ATMA1

Overview

ISC010N06NM5ATMA1 from Infineon Technologies is an N-channel 60 V OptiMOSTM5 power MOSFET optimized for synchronous rectification in high-efficiency DC-DC converters, featuring 1.05 mΩ RDS(on) max at VGS = 10 V, 330 A continuous drain current at TC = 25 °C, and 175 °C junction rating - deployed in server VRMs and telecom power supplies.

For engineers reviewing the ISC010N06NM5ATMA1 datasheet, ISC010N06NM5ATMA1 pinout, ISC010N06NM5ATMA1 application, or ISC010N06NM5ATMA1 equivalent, key selection criteria include low Qg(0V–10V) = 115 nC, Qoss = 123 nC, thermal resistance RthJC = 0.35 °C/W (bottom), avalanche ruggedness (911 mJ EAS), and PG-TSON-8-3 package compatibility with high-density PCB layouts.

Technical Context

This device implements a trench-gate superjunction MOSFET architecture with integrated body diode, enabling fast switching and low conduction loss in hard-switched and synchronous rectifier topologies. Its gate plateau voltage of 4.2 V supports robust drive margin under varying VGS conditions.

Designed for industrial-grade operation, it meets JEDEC qualification with 100% avalanche testing and halogen-free, RoHS-compliant construction. Thermal performance is validated for both bottom-side (RthJC = 0.35 °C/W) and top-side (RthJC ≤ 20 °C/W) cooling paths on FR4 PCBs with 6 cm² copper area.

Key Specifications

Pinout & Package

Package: PG-TSON-8-3 - 5 mm × 6 mm exposed-drain DFN with 0.65 mm pitch, optimized for low-inductance layout and high thermal transfer via bottom-side copper pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with IPB011N06N and STL220N6F7, ISC010N06NM5ATMA1 delivers the best balance of ultra-low RDS(on), moderate Qg, and industry-leading RthJC - making it optimal for thermally constrained, high-current synchronous rectifier designs where PCB space and thermal management are critical.

Availability

ISC010N06NM5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial UPS inverters requiring stable component supply and long-term industrial qualification.

Supply support for ISC010N06NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM5 product line - engineered specifically for high-efficiency, high-current power conversion in data center, telecom, and industrial power supplies where low RDS(on), fast switching, and rugged thermal performance are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At TC = 100 °C, the maximum continuous drain current is 233 A per the datasheet's Absolute Maximum Ratings table (Table 2). This reflects thermal de-rating due to reduced heat dissipation capability at elevated case temperatures, and must be applied when designing for natural convection or limited airflow environments.

Does ISC010N06NM5ATMA1 support gate drive with 5 V logic-level signals?

No - the gate threshold voltage VGS(th) ranges from 2.1 V to 3.3 V, but RDS(on) is specified only at VGS = 6 V and 10 V. At VGS = 5 V, RDS(on) rises significantly (typical ~1.45 mΩ), increasing conduction loss by >40%. Full enhancement requires ≥6 V drive, with 10 V recommended for minimum RDS(on).

Is the internal body diode suitable for freewheeling in hard-switched topologies?

Yes - the body diode has IF = 151 A continuous and trr = 41 ns (typ.) at Tj = 25 °C, making it viable for freewheeling in non-synchronous buck or flyback converters. However, its Qrr = 170 nC and VSD = 0.82 V indicate higher loss than dedicated Schottky diodes, so synchronous rectification is strongly preferred.

How does the PG-TSON-8-3 package differ from standard TSON-8 in thermal performance?

The PG-TSON-8-3 features an enlarged exposed drain pad covering pins 5–8 and optimized internal die attach, achieving RthJC = 0.35 °C/W (bottom) - ~30% lower than standard TSON-8 packages (~0.5 °C/W). This is achieved via thicker copper clip and improved thermal interface material, directly enabling higher power density in compact layouts.