Infineon Technologies ISC035N10NM5LF2ATMA1

Overview

ISC035N10NM5LF2ATMA1 from Infineon is a 100 V, 3.5 mΩ N-channel OptiMOS™ 5 Linear FET in PG-TDSON-8 package, rated for 164 A continuous drain current at T_C = 25 °C and 116 A at 100 °C. It features tight V_GS(th) spread (2.8–3.5 V), low gate charge (Q_g = 70–88 nC), and 100% avalanche tested performance. Designed for high-reliability hot-swap, battery protection, and e-fuse circuits where precise current control and robust SOA are critical.

For engineers reviewing the ISC035N10NM5LF2ATMA1 datasheet, ISC035N10NM5LF2ATMA1 pinout, ISC035N10NM5LF2ATMA1 application, or ISC035N10NM5LF2ATMA1 equivalent, key selection criteria include R_DS(on) stability under linear-mode operation, thermal resistance (R_thJC = 0.7 °C/W), SOA compliance at 10 µs–100 ms pulse widths, and gate plateau voltage (6.4 V) for predictable turn-on timing in current-limiting configurations.

Technical Context

This device belongs to Infineon's OptiMOS™ 5 Linear FET 2 family, engineered specifically for extended safe operating area (SOA) in analog linear-mode switching-unlike standard switching MOSFETs. Its optimized cell layout delivers uniform current distribution and reduced thermal runaway risk during prolonged conduction at high V_DS.

It supports bidirectional current sensing via integrated body diode (V_F = 0.84–1.2 V at 50 A), with reverse recovery time t_rr = 49–98 ns and Q_rr = 72–144 nC. Gate drive compatibility is ensured by V_GS(th) centered at 3.15 V and g_fs = 26–52 S, enabling stable transconductance control across temperature.

Key Specifications

Pinout & Package

Package: PG-TDSON-8 (exposed thermal pad, 5 mm × 6 mm footprint), RoHS-compliant, halogen-free per IEC61249-2-21.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar linear-mode MOSFET applications.

Compared with IPB031N10N5 and STL220N10F7, ISC035N10NM5LF2ATMA1 uniquely balances ultra-low R_DS(on), extended SOA, and guaranteed avalanche ruggedness-making it optimal for mission-critical hot-swap and battery protection where both efficiency and fault survivability are non-negotiable.

Availability

ISC035N10NM5LF2ATMA1 is available at Aetrix Electronics and suitable for hot-swap controllers, battery protection ICs, and industrial e-fuse modules requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for ISC035N10NM5LF2ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

This part belongs to the OptiMOS™ 5 Linear FET 2 product line, developed explicitly for analog linear-mode operation in high-current, high-voltage protection and current-sharing applications-moving beyond traditional switching-only MOSFET design constraints.

FAQ

What is the maximum allowable gate-source voltage for ISC035N10NM5LF2ATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in Table 2 of the official Infineon datasheet Revision 2.3. Exceeding this rating-even transiently-risks permanent gate oxide damage. Recommended gate drive uses 0 V to 10 V logic-level signals with series gate resistor (≥1.6 Ω) to limit dv/dt-induced ringing and overshoot.

Can ISC035N10NM5LF2ATMA1 be used in synchronous rectification?

Yes, its body diode has V_F = 0.84–1.2 V at 50 A and t_rr = 49–98 ns, making it viable for low-frequency (<100 kHz) synchronous rectification in DC-DC converters. However, its Q_rr = 72–144 nC is higher than dedicated sync-rectifier MOSFETs, so efficiency gains diminish above 250 kHz due to increased switching loss.

How is thermal performance affected when the exposed drain tab is not soldered to PCB copper?

Leaving the exposed drain tab unsoldered increases R_thJA from 50 °C/W (with 6 cm² cooling area) to >80 °C/W, reducing maximum continuous current by ~40%. The 0.7 °C/W R_thJC is only achievable when the tab is fully reflow-soldered to ≥2 oz copper with ≥4 thermal vias-per Infineon's layout guidelines in Section 12 of the datasheet.

Does ISC035N10NM5LF2ATMA1 support paralleling without external current balancing resistors?

Yes-its tight V_GS(th) spread (2.8–3.5 V) and matched transconductance (g_fs = 26–52 S) allow direct paralleling of up to four devices with <5% current imbalance at 100 A total, provided gate traces are length-matched and source inductance is minimized. No ballast resistors are needed if PCB layout follows Infineon's symmetric routing recommendations.