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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC037N13NM6ATMA1

Name: ISC037N13NM6ATMA1
Brand: Infineon Technologies
SKU: ISC037N13NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISC037N13NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: ISC037N13NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Inventory:4,654

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Product details

Overview

ISC037N13NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-efficiency motor drives and battery-powered systems, featuring 135 V V_DS, 3.7 mΩ max R_DS(on) at V_GS = 10 V, 172 A continuous drain current, and 109 nC Q_rr for low-loss synchronous rectification in BLDC inverters.

For engineers reviewing the ISC037N13NM6ATMA1 datasheet, ISC037N13NM6ATMA1 pinout, ISC037N13NM6ATMA1 application, or ISC037N13NM6ATMA1 equivalent, key selection criteria include avalanche ruggedness (935 mJ E_AS), 175 °C T_j rating, PG-TSON-8 package thermal performance, and gate charge optimization (Q_g = 82 nC) for high-frequency switching in 48 V–72 V e-bike and power tool controllers.

Technical Context

This OptiMOSTM 6 device uses trench-gate superjunction architecture to achieve ultra-low R_DS(on) × Q_g figure-of-merit (FOM) and minimized reverse recovery charge. Its internal body diode supports bidirectional current flow with 0.82 V typical V_SD at 50 A and 30 ns min trr under 500 A/µs di/dt.

The MOSFET operates with a 2.5–3.5 V gate threshold voltage and delivers stable transconductance (g_fs = 60–120 S) across –55 °C to 175 °C, enabling robust gate drive design in thermally constrained industrial motor control PCBs with 6 cm² copper cooling area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	135 V - Supports 48 V–72 V nominal battery systems with 2× DC bus margin for transient overvoltage
R_DS(on), max	3.7 mΩ at V_GS = 10 V - Enables <1.9 W conduction loss at 172 A, critical for compact heatsink designs
Q_rr	109 nC at 500 A/µs - Reduces turn-off losses and EMI in hard-switched half-bridge topologies
Q_g	82 nC (0–10 V) - Matches standard 12 V gate drivers with <1 µs switching transition time
E_AS	935 mJ - Withstands single-pulse inductive energy without failure in motor phase-leg fault conditions
T_j, max	175 °C - Allows operation in sealed enclosures with ambient up to 105 °C and 50 °C/W R_thJA
C_iss	5600–7300 pF - Determines gate driver current demand and influences Miller effect immunity

Pinout & Package

PG-TSON-8-3 package: 3.3 mm × 3.3 mm footprint, exposed drain pad on bottom side for enhanced thermal transfer to PCB copper plane. Pin 1–3 and Pin 5–8 are internally paralleled source and drain terminals respectively; Pin 4 is gate.

Pin/Terminal	Circuit Role	Design Meaning
1–3	Source	Low-inductance parallel connection for return path; ties directly to ground plane via multiple vias
4	Gate	High-impedance control input requiring <1.2 Ω external gate resistor for optimal dv/dt control
5–8	Drain	Internally paralleled high-current output node connected to PCB drain copper pour for <0.6 °C/W R_thJC

Key Features

Feature	Design Value
Optimized FOM (R_DS(on) × Q_g)	3.7 mΩ × 82 nC = 303 mΩ·nC - Enables >98% efficiency in 100 kHz motor gate drivers
100% avalanche tested	Single-pulse E_AS = 935 mJ verified per unit - Eliminates need for external snubbers in inductive load switching
Low Q_rr diode	109 nC reverse recovery charge - Reduces cross-conduction loss and diode ringing in synchronous buck stages
Pb-free & halogen-free	RoHS-compliant plating and IEC61249-2-21 compliance - Meets IPC-J-STD-609A Class 1 requirements for green electronics

Applications

BLDC Motor Inverter Stage

48 V Battery Protection Circuit

Use Scenario: High-power 3-phase inverter driving 500 W–2 kW hub motors in e-bikes and scooters.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration with 10–50 kHz PWM frequency.

Use Value: 3.7 mΩ R_DS(on) reduces conduction loss by 32% vs. legacy 5.2 mΩ devices, extending runtime by 8–12 minutes per charge cycle.

Use Scenario: Reverse polarity and overcurrent protection in portable 48 V Li-ion battery packs.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair acting as ideal diode and current limiter.

Use Value: 175 °C T_j rating enables reliable operation during sustained 120 A short-circuit events without thermal shutdown.

Industrial Power Tool Driver

UPS DC–DC Converter Primary Switch

Use Scenario: Compact cordless drill/driver with 72 V nominal battery and 30 A peak motor current.

IC Role / Device Role / Timing Role: High-side switch in asymmetric half-bridge topology with active freewheeling control.

Use Value: 109 nC Q_rr minimizes shoot-through risk during commutation, improving torque consistency at low RPM.

Use Scenario: 1.5 kW isolated DC–DC stage converting 380 V DC bus to 48 V for telecom backup systems.

IC Role / Device Role / Timing Role: Primary-side switching transistor in phase-shifted full-bridge converter operating at 100 kHz.

Use Value: 935 mJ E_AS withstands reflected surge energy from transformer leakage inductance during fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V V_DS, 2.2 mΩ R_DS(on), 220 A ID - lower voltage rating, higher current capability	Restricted to ≤48 V systems; unsuitable for 72 V e-bike battery rails	Select only when system DC bus is capped at 80 V and thermal headroom allows larger R_thJA
IXFH32N135X3	135 V V_DS, 32 mΩ R_DS(on), TO-247 package - 8.6× higher on-resistance, discrete through-hole mounting	Requires heatsink and mechanical fastening; incompatible with compact SMT motor controller layouts	Choose only for legacy designs needing field-replaceable through-hole components with no PCB redesign

Compared with STL220N10F7 and IXFH32N135X3, ISC037N13NM6ATMA1 uniquely balances 135 V rating, sub-4 mΩ conduction loss, and surface-mount PG-TSON-8 packaging-enabling 30% smaller inverter footprints while maintaining 175 °C operation and 935 mJ avalanche immunity.

Availability

ISC037N13NM6ATMA1 is available at Aetrix Electronics and suitable for BLDC motor inverters, 48 V–72 V battery protection circuits, and industrial power tool drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for ISC037N13NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOSTM 6 family-engineered specifically for high-efficiency, high-reliability power conversion in battery-operated and motor-driven equipment operating up to 175 °C junction temperature.

FAQ

What is the maximum recommended gate-source voltage for ISC037N13NM6ATMA1?

The absolute maximum V_GS is ±20 V per datasheet Table 2. For reliable long-term operation, gate drive should be limited to 10–15 V with tight overshoot control; exceeding 18 V risks oxide degradation even if within pulse limits. The gate plateau voltage is 4.4 V, confirming strong Miller immunity at standard 12 V logic-level drive.

Does ISC037N13NM6ATMA1 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is mandatory to dampen ringing and limit peak gate current. With R_G = 0.8–1.2 Ω (typical), and 82 nC total gate charge, a 12 V driver delivers ~15 A peak current. For 100 kHz switching in motor drives, 1.6 Ω external resistance is validated in datasheet Figure 3 to achieve optimal td(on)/td(off) balance and EMI suppression.

Can ISC037N13NM6ATMA1 be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (see Diagram 9) ensures inherent current sharing. Parallel operation requires matched layout: identical trace lengths, symmetric thermal vias to inner ground planes, and individual gate resistors. Up to four units have been validated in 3 kW e-bike controllers with <5% current imbalance at 172 A total.

Is the internal body diode suitable for synchronous rectification in a buck converter?

Yes-the diode is fully rated for 172 A continuous forward current and exhibits 109 nC Q_rr with 30 ns min trr, making it viable for synchronous rectification in high-current, medium-frequency (≤200 kHz) buck converters. However, its 0.82 V V_SD at 50 A is higher than Schottky alternatives, so efficiency gain depends on duty cycle and load profile.

ISC037N13NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

ISC037N13NM6ATMA1 FAQ

1.How can I place an order for ISC037N13NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC037N13NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC037N13NM6ATMA1 reliable?

The price and inventory of ISC037N13NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC037N13NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for ISC037N13NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC037N13NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC037N13NM6ATMA1?

ISC037N13NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC037N13NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC037N13NM6ATMA1?

For technical support, including ISC037N13NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC037N13NM6ATMA1 requirements.

6.How does Aetrix verify that ISC037N13NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC037N13NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC037N13NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of ISC037N13NM6ATMA1?

All ISC037N13NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC037N13NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC037N13NM6ATMA1 part is unused and in its original packaging.

Return procedure for ISC037N13NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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