Infineon Technologies ISC044N15NM6ATMA1

Overview

ISC044N15NM6ATMA1 from Infineon is an N-channel enhancement-mode MOSFET in the OptiMOS™ 6 family, rated for 150 V drain-source voltage, 4.4 mΩ maximum R_DS(on) at V_GS = 10 V, and 156 A continuous drain current at T_C = 25 °C. It features ultra-low gate charge (Q_g = 55 nC), low output charge (Q_oss = 163 nC), and is qualified per JEDEC for industrial applications - deployed in high-efficiency DC-DC converters and motor drives.

For engineers reviewing the ISC044N15NM6ATMA1 datasheet, ISC044N15NM6ATMA1 pinout, ISC044N15NM6ATMA1 application, or ISC044N15NM6ATMA1 equivalent, key selection criteria include its 0.59 °C/W junction-to-case thermal resistance, 137 nC switching charge at 500 A/μs di/dt, and PG-TSON-8 package with exposed drain pad for enhanced thermal performance.

Technical Context

This device uses a trench-gate superjunction structure optimized for high-voltage switching efficiency and low conduction loss. Its gate threshold voltage (V_GS(th)) is tightly specified at 3.0–4.0 V, enabling robust drive compatibility with standard 5 V and 8 V logic-level controllers.

Dynamic behavior is characterized by fast switching (t_d(on) = 15 ns, t_f = 10 ns) and low reverse recovery charge (Q_rr = 137 nC at dI/dt = 500 A/μs), supporting high-frequency synchronous rectification and hard-switched topologies up to 500 kHz.

Key Specifications

Pinout & Package

Package: PG-TSON-8 (Power Thin Small Outline No-lead), 5 mm × 6 mm footprint, thermally enhanced with exposed drain pad on bottom side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Compared with IPB120N15N5 and IRFH7185TRPBF, ISC044N15NM6ATMA1 delivers superior Q_g/R_DS(on) ratio and JEDEC industrial qualification - making it optimal for new designs targeting >98% efficiency and long-term supply continuity in telecom and industrial power systems.

Availability

ISC044N15NM6ATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and telecom rectifiers requiring stable component supply with guaranteed long-term availability and full traceability.

Supply support for ISC044N15NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 6 product line - engineered specifically for high-efficiency, high-power-density industrial and telecom power conversion, emphasizing low R_DS(on), fast switching, and ruggedness in harsh thermal environments.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies a maximum operating temperature of 175 °C for both junction and storage. For continuous operation at rated current, the case temperature must not exceed 100 °C when mounted on a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² copper area, per thermal derating curves in Diagram 2. Exceeding this requires active cooling or current reduction.

Is ISC044N15NM6ATMA1 suitable for synchronous rectification in LLC resonant converters?

Yes - its low Q_rr (137 nC), fast t_rr (33 ns), and integrated body diode with soft recovery characteristics make it well-suited for secondary-side synchronous rectification in LLC topologies operating up to 500 kHz. The 0.59 °C/W R_thJC ensures thermal stability under high RMS currents.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage of 3.0–4.0 V and is fully specified for 0 V turn-off. A negative gate voltage is not required or recommended; however, a −2 V to 0 V turn-off bias may improve noise immunity in high-dV/dt environments, within the absolute maximum V_GS rating of ±20 V.

Can ISC044N15NM6ATMA1 replace older OptiMOS™ 5 devices in existing designs?

Yes - it is pin-compatible with OptiMOS™ 5 150 V devices in PG-TSON-8 packages (e.g., IPP040N15N5), offering lower R_DS(on) and improved Q_g/Q_oss. Layout reuse is possible, but gate drive strength should be verified due to higher peak gate current demand from reduced gate resistance (R_G = 0.86 Ω).