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Infineon Technologies ISC046N04NM5ATMA1

Part No.:
ISC046N04NM5ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixISC046N04NM5ATMA1.pdf
Description:
40V 4.6M OPTIMOS MOSFET SUPERSO8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:14,250

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Product details

Overview

ISC046N04NM5ATMA1 from Infineon Technologies is an N-channel 40 V OptiMOSTM 5 power MOSFET in TDSON-8 FL package, featuring 4.6 mΩ max RDS(on) at VGS = 10 V, 77 A continuous drain current, 17 nC output charge, and 100% avalanche tested for robustness in high-current switching applications such as battery-powered motor drives.

For engineers reviewing the ISC046N04NM5ATMA1 datasheet, ISC046N04NM5ATMA1 pinout, ISC046N04NM5ATMA1 application, or ISC046N04NM5ATMA1 equivalent, key selection criteria include low conduction loss (RDS(on) ≤ 4.6 mΩ), thermal resistance (RthJC = 3 °C/W bottom-side), 175 °C rated junction temperature, and synchronous FET gate charge (Qg(sync) = 14 nC) for high-efficiency DC-DC converters.

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for low RDS(on) × Qg figure-of-merit in synchronous buck topologies. Its TDSON-8 FL package features enlarged source interconnection for reduced parasitic inductance and enhanced current handling.

The MOSFET supports gate drive voltages from 4.5 V to 10 V, with a typical gate threshold voltage of 2.2–3.4 V and plateau voltage of 4.5 V. It delivers 32 mJ single-pulse avalanche energy and exhibits fast switching with td(on) = 4 ns, tr = 2 ns, td(off) = 7 ns, and tf = 3 ns under standard test conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage compatible with 12 V/24 V battery systems and 36 V nominal input rails
RDS(on), max4.6 mΩ at VGS = 10 V - Enables <1.8 W conduction loss at 77 A, critical for high-current power stages
ID, cont77 A at TC = 25 °C - Supports high-power motor control and server VRMs without forced cooling
Qoss17 nC - Low output charge reduces turn-off losses and improves light-load efficiency in hard-switched converters
RthJC3 °C/W (bottom side) - Enables direct thermal coupling to heatsink or PCB copper, supporting >50 W dissipation
Tj, max175 °C - Rated for industrial and automotive under-hood environments with extended thermal margin
Qg(0–10 V)16 nC - Optimized for fast, low-loss switching with standard 1.6 Ω gate driver impedance

Pinout & Package

TDSON-8 FL (enlarged source interconnection) package with exposed drain pad on bottom side for thermal and electrical connection. Pin 1–3 and Pin 4 are source terminals; Pin 5–8 are drain terminals; Pin 4 is gate terminal.

Pin/TerminalCircuit RoleDesign Meaning
S1, S2, S3SourceThree parallel source pins reduce bond wire inductance and improve current sharing in high-frequency switching
GGateSingle gate input with 2.1–3 Ω internal gate resistance; requires external gate resistor for EMI and dV/dt control
D1–D4DrainFour drain pins connected to large bottom-side exposed pad - provides low-inductance, high-current path to PCB ground plane

Key Features

FeatureDesign Value
Very low RDS(on)4.6 mΩ max enables <1.8 W conduction loss at full rated current, reducing thermal design burden
100% avalanche tested32 mJ single-pulse EAS rating ensures reliable operation during inductive load switching transients
Superior thermal resistanceRthJC = 3 °C/W (bottom) allows >50 W power dissipation with minimal temperature rise on heatsink
175 °C rated junctionExtended temperature capability supports operation in sealed enclosures or high ambient environments
Pb-free & halogen-freeRoHS-compliant lead plating and IEC61249-2-21 compliant materials meet industrial environmental standards

Applications

Battery-Powered Motor DrivesHigh-Efficiency Synchronous Buck Converters

Use Scenario: 24 V BLDC motor control in cordless power tools with peak currents up to 70 A.

IC Role / Device Role / Timing Role: High-side or low-side power switch in 3-phase inverter stage; operates at 20–50 kHz PWM frequency.

Use Value: 4.6 mΩ RDS(on) minimizes I²R losses during high-torque startup, extending battery runtime by ~8% vs. 6.5 mΩ alternatives.

Use Scenario: 12 V input to 1.2 V/100 A output VRM in AI accelerator cards.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) in multiphase buck converter; driven with 10 V gate voltage.

Use Value: Qg(sync) = 14 nC and Qoss = 17 nC enable >94% efficiency at 500 kHz switching with minimal dead-time loss.

Automotive Body Control ModulesIndustrial PLC Output Stages

Use Scenario: Load switching for headlights, HVAC actuators, and solenoids in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Single-ended high-side switch with integrated reverse-battery protection via external circuitry.

Use Value: 175 °C Tj,max and 100% avalanche testing ensure reliability across -40 °C to +125 °C ambient with load dump transients.

Use Scenario: Solid-state relay replacement in 24 V DC output modules driving 2 A–10 A inductive loads.

IC Role / Device Role / Timing Role: Fast-switching power switch with integrated freewheeling diode (VSD = 0.88 V typ).

Use Value: 30 ns trr and 19 nC Qrr suppress voltage spikes during inductive turn-off, eliminating need for snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRL40B215TRPBFRDS(on) = 3.2 mΩ (lower), but Qg = 28 nC (higher); TO-252 package; RthJA = 62 °C/WHigher conduction efficiency but slower switching and poorer thermal performance on PCBPrefer for low-frequency, high-current linear regulation where thermal mass dominates
BSC028N06NS3GRDS(on) = 2.8 mΩ, Qg = 22 nC; 60 V rating; PG-TDSON-8 package with identical footprintHigher voltage margin and slightly better FoM, but not qualified for 175 °C operationChoose when system requires 60 V headroom or JEDEC industrial qualification is not mandatory

Compared with IRL40B215TRPBF and BSC028N06NS3G, ISC046N04NM5ATMA1 offers optimal balance of low RDS(on), low Qg, 175 °C rating, and industry-qualified thermal performance - making it preferred for compact, high-reliability 40 V synchronous buck and motor drive designs.

Availability

ISC046N04NM5ATMA1 is available at Aetrix Electronics and suitable for battery-powered motor drives, high-efficiency synchronous buck converters, automotive body control modules, and industrial PLC output stages requiring stable component supply and long-term manufacturability.

Supply support for ISC046N04NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOSTM 5 family - engineered specifically for high-current, high-efficiency DC-DC conversion and motor control in space-constrained industrial and automotive applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The ISC046N04NM5ATMA1 supports 55 A continuous drain current at TC = 100 °C with VGS = 10 V, per Table 2 of the datasheet. This derating reflects thermal limits of the TDSON-8 FL package and must be validated against actual PCB layout and airflow conditions.

Does this MOSFET include an integrated body diode, and what are its key parameters?

Yes - it integrates a fast-recovery body diode with 50 A continuous forward current (IS), 0.88 V typical forward voltage (VSD) at 35 A and 25 °C, 30 ns reverse recovery time (trr), and 19 nC reverse recovery charge (Qrr). These values are specified in Table 7 and support efficient freewheeling in synchronous rectification.

Can ISC046N04NM5ATMA1 be used in a high-side configuration with 12 V gate drive?

Yes - its VGS(th) range (2.2–3.4 V) and guaranteed turn-on at VGS ≥ 4.5 V make it fully compatible with 12 V gate drivers. The 20 V absolute maximum VGS rating provides 2× safety margin, and the 4.5 V gate plateau voltage ensures stable enhancement-mode operation.

What is the significance of the "FL" suffix in TDSON-8 FL package?

The "FL" denotes "Full Leadframe" - indicating an enlarged source interconnection area within the TDSON-8 footprint. This design reduces source inductance and improves current distribution across pins S1–S3, directly enhancing switching performance and thermal transfer to the PCB copper plane.

ISC046N04NM5ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 5
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:
3.4V @ 17µA
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1400 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 50W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8 FL

ISC046N04NM5ATMA1 FAQ

1.How can I place an order for ISC046N04NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC046N04NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC046N04NM5ATMA1 reliable?

The price and inventory of ISC046N04NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC046N04NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for ISC046N04NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC046N04NM5ATMA1 transactions.

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4.How is shipping managed for ISC046N04NM5ATMA1?

ISC046N04NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC046N04NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC046N04NM5ATMA1?

For technical support, including ISC046N04NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC046N04NM5ATMA1 requirements.

6.How does Aetrix verify that ISC046N04NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC046N04NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC046N04NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of ISC046N04NM5ATMA1?

All ISC046N04NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC046N04NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC046N04NM5ATMA1 part is unused and in its original packaging.

Return procedure for ISC046N04NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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