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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC046N13NM6ATMA1

Name: ISC046N13NM6ATMA1
Brand: Infineon Technologies
SKU: ISC046N13NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISC046N13NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: ISC046N13NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ISC046N13NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-efficiency motor drives and battery-powered systems, featuring 135 V V_DS, 4.6 mΩ max R_DS(on) at V_GS = 10 V, 142 A continuous drain current, 100% avalanche tested, and operation up to 175 °C.

For engineers reviewing the ISC046N13NM6ATMA1 datasheet, ISC046N13NM6ATMA1 pinout, ISC046N13NM6ATMA1 application, or ISC046N13NM6ATMA1 equivalent, key selection criteria include low Q_g × R_DS(on) figure-of-merit (65 nC total gate charge), ultra-low Q_rr (85 nC), and SuperSO8 package thermal performance in high-current switching topologies.

Technical Context

This OptiMOSTM 6 device employs a trench-gate silicon process with optimized cell layout to achieve simultaneous low conduction loss (R_DS(on) = 4.6 mΩ) and fast switching dynamics (t_r = 7.3 ns, t_f = 7.2 ns). Its internal body diode exhibits low V_SD (0.84 V typ. at 50 A) and controlled Q_rr (85 nC), enabling robust synchronous rectification and hard-switched half-bridge operation.

The MOSFET supports gate drive voltages from 5 V to 15 V, with a well-defined V_GS(th) range of 2.5–3.5 V and plateau voltage of 4.4 V, ensuring stable turn-on behavior across temperature (–55 °C to 175 °C) and minimizing shoot-through risk in complementary switching stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	135 V - Withstands DC bus voltages up to 108 V in 48 V battery systems with 25 % margin.
R_DS(on), max	4.6 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 100 A, reducing heatsink requirements.
I_D, cont	142 A at T_C = 25 °C - Supports high-current motor phase legs without paralleling devices.
Q_g	65 nC - Low gate drive energy enables efficient operation with standard gate drivers (e.g., 1EDN7512B).
Q_rr	85 nC - Minimizes reverse recovery losses in synchronous buck and BLDC inverters.
T_j max	175 °C - Rated for industrial and automotive under-hood environments without derating.
R_thJC	0.7 °C/W - Enables direct case-to-heatsink thermal path for high-power density layouts.

Pinout & Package

ISC046N13NM6ATMA1 uses the PG-TDSON-8 (SuperSO8) package: thermally enhanced 5 mm × 6 mm surface-mount outline with exposed drain pad on bottom side for optimal heat transfer. Pin 1–3 and Pin 5–8 are source and drain terminals respectively; Pin 4 is gate.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1–3	Source	Common return path for load current; electrically tied to internal MOSFET source and body diode cathode.
Pin 4	Gate	Control terminal requiring ≤20 V drive; low input capacitance (C_iss = 4400 pF) reduces driver loading.
Pin 5–8	Drain	Main power output node; connected to large copper area for thermal dissipation and low-inductance high-current routing.

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	299 mΩ·nC - Balances switching speed and conduction loss for 100–200 kHz motor control.
Low Q_rr with soft recovery	85 nC at 500 A/µs - Reduces EMI and voltage overshoot during diode commutation in half-bridges.
100 % avalanche rated	616 mJ single-pulse E_AS - Ensures ruggedness against inductive switching transients without external snubbers.
MOSFET + integrated body diode	V_SD = 0.84 V @ 50 A - Enables synchronous rectification in DC-DC converters without discrete diode replacement.

Applications

Brushless DC Motor Inverter

Battery Protection Circuit

Use Scenario: Three-phase inverter stage in cordless power tools operating from 48 V Li-ion packs with peak phase currents >100 A.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-step commutation, driven by gate driver ICs with 10 V logic-level compatibility.

Use Value: 4.6 mΩ R_DS(on) and 142 A rating eliminate need for paralleled MOSFETs; 175 °C rating sustains full torque during stall conditions.

Use Scenario: Overcurrent and short-circuit protection switch in 48 V e-bike battery management systems with 120 A continuous discharge capability.

IC Role / Device Role / Timing Role: Load switch placed between battery pack and main system bus, controlled by BMS microcontroller via optocoupled gate driver.

Use Value: 100 % avalanche testing ensures survival during sudden cable disconnect events; low Q_g allows fast turn-off (<100 ns) to limit fault energy.

Server PSU LLC Resonant Switch

Industrial UPS Half-Bridge

Use Scenario: Primary-side switching device in 1 kW server power supply using asymmetric half-bridge LLC topology with 380 V nominal bus.

IC Role / Device Role / Timing Role: ZVS-capable resonant switch operating at 250–500 kHz, leveraging low C_oss (880 pF) and Q_oss (112 nC) for reduced capacitive loss.

Use Value: Optimized C_oss/Q_oss trade-off minimizes dead-time losses while maintaining high efficiency (>96 %) at full load.

Use Scenario: Output inverter stage in 5 kVA industrial uninterruptible power supply delivering 230 V AC from 400 V DC link.

IC Role / Device Role / Timing Role: Hard-switched half-bridge leg with active clamping, requiring high dV/dt immunity and robust body diode recovery.

Use Value: 135 V V_DS provides 20 % margin over 400 V DC link; low Q_rr prevents cross-conduction losses during polarity reversal.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N15N5	150 V V_DS, 1.8 mΩ R_DS(on), larger TO-263 package	Higher voltage margin but higher gate charge (110 nC); requires larger PCB footprint	Preferred for 400 V DC link designs where lower R_DS(on) justifies thermal and layout overhead.
STL220N10F7	100 V V_DS, 2.2 mΩ R_DS(on), same SuperSO8 package	Lower voltage rating limits use to ≤72 V systems; faster switching (Q_g = 52 nC)	Select when operating from 24–48 V batteries and switching frequency exceeds 300 kHz.

Compared with IPB180N15N5 and STL220N10F7, ISC046N13NM6ATMA1 uniquely balances 135 V rating, 4.6 mΩ resistance, and SuperSO8 form factor-making it optimal for 48–60 V industrial motor drives where board space, thermal density, and avalanche ruggedness are jointly constrained.

Availability

ISC046N13NM6ATMA1 is available at Aetrix Electronics and suitable for brushless DC motor inverters, battery protection circuits, server power supply resonant switches, and industrial UPS half-bridges requiring stable component supply and long-term production continuity.

Supply support for ISC046N13NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This device belongs to the OptiMOSTM 6 family-designed specifically for high-efficiency, high-current switching in battery-powered and motor-control applications where thermal density and ruggedness are critical.

FAQ

What is the maximum recommended gate drive voltage for ISC046N13NM6ATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V to 15 V drive. Operation at 10 V ensures full R_DS(on) specification (≤4.6 mΩ), while 15 V further reduces on-resistance to 3.7 mΩ. Driving above 15 V yields diminishing returns and increases gate oxide stress risk over lifetime.

Does ISC046N13NM6ATMA1 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is required to control dv/dt and suppress ringing. For typical 100–200 kHz motor drive applications, a 1.6 Ω external resistor is validated per datasheet switching waveforms. Lower values (≤1 Ω) increase peak gate current and EMI; higher values (>5 Ω) slow switching and raise dynamic losses.

Can ISC046N13NM6ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Diagram 9) ensures inherent current sharing. Layout must maintain matched gate and source inductance paths; use Kelvin source connections and individual gate resistors. Derate total current by 15 % versus sum of individual ratings for reliability.

Is the internal body diode suitable for synchronous rectification in DC-DC converters?

Yes-the diode is fully specified with V_SD = 0.84 V (typ.) at 50 A and Q_rr = 85 nC, enabling efficient synchronous operation in buck and half-bridge topologies up to 200 kHz. Its soft recovery characteristic minimizes voltage spikes and EMI compared to standard FRDs.

ISC046N13NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

ISC046N13NM6ATMA1 FAQ

1.How can I place an order for ISC046N13NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC046N13NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC046N13NM6ATMA1 reliable?

The price and inventory of ISC046N13NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC046N13NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for ISC046N13NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC046N13NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC046N13NM6ATMA1?

ISC046N13NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC046N13NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC046N13NM6ATMA1?

For technical support, including ISC046N13NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC046N13NM6ATMA1 requirements.

6.How does Aetrix verify that ISC046N13NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC046N13NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC046N13NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of ISC046N13NM6ATMA1?

All ISC046N13NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC046N13NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC046N13NM6ATMA1 part is unused and in its original packaging.

Return procedure for ISC046N13NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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