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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC078N12NM6ATMA1

Name: ISC078N12NM6ATMA1
Brand: Infineon Technologies
SKU: ISC078N12NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISC078N12NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISC078N12NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Inventory:4,885

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Product details

Overview

ISC078N12NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching and synchronous rectification in 120 V power conversion systems. It delivers 7.8 mΩ max R_DS(on) at V_GS = 10 V, 85 A continuous drain current (T_C = 25 °C), and 175 °C maximum junction temperature. Its low Q_rr (179.9 nC @ 1000 A/µs) and high E_AS (302 mJ) support robust hard-switching in industrial SMPS and DC-DC converters.

For engineers reviewing the ISC078N12NM6ATMA1 datasheet, ISC078N12NM6ATMA1 pinout, ISC078N12NM6ATMA1 application, or ISC078N12NM6ATMA1 equivalent, key selection criteria include its SuperSO8 package thermal performance (R_thJC = 1.2 °C/W bottom-side), gate charge profile (Q_g = 21 nC), and body diode recovery behavior under high di/dt conditions.

Technical Context

This OptiMOSTM 6 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_g figure-of-merit (FOM) and minimized reverse recovery charge. Its internal body diode exhibits low V_SD (0.86 V typ. @ 37 A, T_j = 25 °C) and controlled trr (17.9 ns min @ 1000 A/µs), enabling efficient synchronous rectification without external Schottky assist.

The MOSFET operates with a gate threshold voltage of 2.6–3.6 V and features a gate plateau voltage of 5.2 V, supporting stable PWM control across wide temperature ranges (–55 to +175 °C). Its PG-TDSON-8 (SuperSO8) package enables high-current PCB routing via exposed drain pads on pins 5–8 and source connection on pins 1–3.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - supports 100 V nominal bus designs with 20 % margin for transients
R_DS(on), max	7.8 mΩ @ V_GS = 10 V - enables <1.5 W conduction loss at 40 A in TO-220-equivalent thermal footprint
I_D, cont	85 A @ T_C = 25 °C - rated for high-current output stages in server VRMs and telecom PSUs
Q_rr	179.9 nC @ dI/dt = 1000 A/µs - reduces turn-on losses and EMI in synchronous buck converters
E_AS	302 mJ - withstands single-pulse avalanche stress during overvoltage events without failure
Q_g	21 nC @ 0–10 V - balances switching speed and gate drive power in 100–500 kHz applications
T_j, max	175 °C - allows operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

ISC078N12NM6ATMA1 is housed in PG-TDSON-8 (SuperSO8), a thermally enhanced surface-mount package with exposed drain pad on pins 5–8 and source terminals on pins 1–3. Gate connects to pin 4. The package supports bottom-side thermal transfer via soldered copper area and complies with MSL 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–3	Source	Low-inductance parallel connection for return path; ties directly to PCB ground plane
Pin 4	Gate	High-impedance control input requiring <21 nC charge for full enhancement
Pins 5–8	Drain	Exposed metal pad for high-current conduction and primary thermal path to PCB

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	164 Ω·nC - minimizes combined conduction and switching losses in high-frequency topologies
Low Q_rr with controlled di/dt dependence	179.9 nC @ 1000 A/µs - reduces voltage overshoot and snubber requirements in synchronous rectifiers
175 °C rated junction temperature	Enables derating-free operation up to 125 °C ambient in forced-air-cooled systems
Optimized body diode for synchronous rectification	V_SD = 0.86 V typ. @ 37 A - lowers forward drop vs. discrete Schottky in compact 12 V output rails

Applications

Server VRM Output Stage

Industrial DC-DC Converter

Use Scenario: High-current, high-efficiency 12 V output stage in multi-phase CPU/GPU VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–600 kHz with precise gate timing relative to high-side FET.

Use Value: 7.8 mΩ R_DS(on) and low Q_rr reduce total power loss by >15 % vs. prior-gen 100 V MOSFETs at 60 A load.

Use Scenario: Isolated 48 V to 12 V DC-DC converter in programmable logic controller (PLC) power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward or LLC resonant topology.

Use Value: 175 °C rating ensures reliability under 70 °C ambient + 20 °C rise in sealed DIN-rail enclosures.

Telecom Rectifier Module

EV Onboard Charger Auxiliary Supply

Use Scenario: 54 V input telecom rectifier delivering 200 W at 12 V with >95 % efficiency target.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in non-isolated buck-derived architecture.

Use Value: 302 mJ E_AS withstands line surges per IEC 61000-4-5 Level 4 without derating.

Use Scenario: Auxiliary 12 V supply in bidirectional OBC handling 400–800 V battery inputs.

IC Role / Device Role / Timing Role: Primary-side clamp switch or secondary-side rectifier in flyback or forward auxiliary converter.

Use Value: SuperSO8 package enables 1.2 °C/W junction-to-case thermal resistance for compact heatsinkless design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 120 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N12F7	R_DS(on) = 7.5 mΩ (typ), Q_g = 24.5 nC, Q_rr = 210 nC @ 1000 A/µs	Slightly higher switching loss due to elevated Q_rr; requires stronger gate driver	Prefer when lower R_DS(on) is critical and layout accommodates higher EMI filtering
IXTP110N10T	R_DS(on) = 10.5 mΩ, Q_g = 19 nC, V_DS = 100 V (not 120 V)	Lower voltage rating limits use to ≤80 V bus systems; reduced avalanche margin	Select only for cost-sensitive 48–60 V applications where 120 V headroom is unnecessary

Compared with STL220N12F7 and IXTP110N10T, ISC078N12NM6ATMA1 offers superior R_DS(on)/Q_rr trade-off for 100–120 V synchronous rectification, with verified 175 °C operation and MSL 1 packaging for high-reliability industrial assembly.

Availability

ISC078N12NM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for ISC078N12NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM 6 family-designed specifically for high-efficiency, high-frequency power conversion in datacenter, industrial, and telecom infrastructure where thermal density and switching loss dominate system-level efficiency.

FAQ

What is the maximum allowable gate-source voltage for ISC078N12NM6ATMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions, especially in layouts with high parasitic inductance.

Does ISC078N12NM6ATMA1 require a gate resistor for reliable operation?

Yes-a series gate resistor (typically 1.6 Ω, as used in datasheet test conditions) is required to dampen ringing, limit peak gate current, and control dv/dt during switching. Without it, parasitic oscillation can cause shoot-through, increased EMI, and localized gate stress leading to premature failure.

Can ISC078N12NM6ATMA1 be used in linear mode (e.g., as a pass transistor)?

No-it is not characterized or qualified for linear (saturation) operation. Its Safe Operating Area (SOA) diagram shows limited DC capability (≤10 A at 100 V), and prolonged linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on) and inadequate SOA margin at high V_DS/I_D combinations.

How does the body diode performance compare to discrete Schottky diodes in 12 V output stages?

At 37 A and 25 °C, its V_SD is 0.86 V (typ), comparable to 0.8–0.9 V Schottkys, but with significantly lower leakage (<100 µA at 100 V) and no soft-recovery tail. Unlike Schottkys, it avoids thermal runaway at elevated temperatures and integrates seamlessly into standard MOSFET gate-drive architectures.

ISC078N12NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 13.2A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 7.8mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 49.6µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SuperSO8

ISC078N12NM6ATMA1 FAQ

1.How can I place an order for ISC078N12NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC078N12NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC078N12NM6ATMA1 reliable?

The price and inventory of ISC078N12NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC078N12NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for ISC078N12NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC078N12NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC078N12NM6ATMA1?

ISC078N12NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC078N12NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC078N12NM6ATMA1?

For technical support, including ISC078N12NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC078N12NM6ATMA1 requirements.

6.How does Aetrix verify that ISC078N12NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC078N12NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC078N12NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of ISC078N12NM6ATMA1?

All ISC078N12NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC078N12NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC078N12NM6ATMA1 part is unused and in its original packaging.

Return procedure for ISC078N12NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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