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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC110N12NM6ATMA1

Name: ISC110N12NM6ATMA1
Brand: Infineon Technologies
SKU: ISC110N12NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISC110N12NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISC110N12NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ISC110N12NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching and synchronous rectification in 120 V power conversion systems. It delivers R_DS(on) ≤ 11 mΩ at V_GS = 10 V, 62 A continuous drain current (T_C = 25 °C), 175 °C maximum junction temperature, and ultra-low Q_rr = 112.5 nC (dI_F/dt = 1000 A/µs), enabling high-efficiency DC-DC converters and motor drives.

For engineers reviewing the ISC110N12NM6ATMA1 datasheet, ISC110N12NM6ATMA1 pinout, ISC110N12NM6ATMA1 application, or ISC110N12NM6ATMA1 equivalent, key selection criteria include its 120 V V_DS, 11 mΩ on-resistance, 15.4 nC total gate charge, 175 °C thermal rating, and SuperSO8 package with integrated body diode for synchronous rectifier operation.

Technical Context

This OptiMOSTM 6 device employs trench-gate silicon technology with optimized cell pitch and reduced gate-drain charge (Q_gd = 3.6–5.4 nC) to achieve low gate-charge × R_DS(on) figure-of-merit (FOM). Its internal body diode exhibits fast reverse recovery (t_rr = 14.7–29.4 ns at dI_F/dt = 1000 A/µs) and low Q_rr, minimizing switching losses in hard-commutated topologies.

The MOSFET supports robust avalanche operation (E_AS = 185 mJ, I_AS = 26 A) and operates across –55 °C to +175 °C. Thermal resistance from junction-to-case (bottom side) is 1.6 °C/W, enabling high-power density designs when mounted on PCB copper areas per JEDEC JESD51-14 standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - Maximum blocking voltage for primary-side switches in 48 V–96 V bus systems and industrial SMPS.
R_DS(on), max	11 mΩ @ V_GS = 10 V, I_D = 26 A - Enables <1.5 W conduction loss at 62 A, critical for high-current synchronous rectifiers.
Q_G	15.4 nC (0 V → 10 V) - Low gate drive energy reduces driver IC stress and enables >1 MHz switching in LLC resonant converters.
Q_rr	112.5 nC @ dI_F/dt = 1000 A/µs - Minimizes diode-induced voltage spikes and EMI in high-dI/dt synchronous buck stages.
T_j(max)	175 °C - Supports operation in sealed enclosures or high-ambient environments without derating below 100 °C case temperature.
R_thJC (bottom)	1.6 °C/W - Allows direct thermal coupling to heatsink via exposed drain pad, supporting >80 W continuous dissipation at T_C = 100 °C.
I_D, cont	62 A @ T_C = 25 °C - Rated for high-current output stages in server VRMs and telecom power supplies.

Pinout & Package

ISC110N12NM6ATMA1 uses the PG-TDSON-8 (SuperSO8) package: 5 mm × 6 mm footprint with exposed drain pad on bottom side for thermal management. Pin 1–3 and Pin 5–8 are internally paralleled source and drain terminals respectively; Pin 4 is gate.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1–3	Source	Low-inductance parallel connection for return path; ties directly to PCB ground plane for EMI control.
Pin 4	Gate	Single-point control input requiring <1.6 Ω external gate resistor to damp ringing during 10 V switching transitions.
Pin 5–8	Drain	Internally paralleled high-current output node connected to exposed copper pad for thermal and electrical conduction.

Key Features

Feature	Design Value
Optimized FOM (Q_G × R_DS(on))	170 pC·Ω - Reduces combined switching + conduction loss in 300–1000 kHz DC-DC stages versus prior-generation MOSFETs.
Low Q_rr with controlled dV/dt	112.5 nC @ 1000 A/µs - Limits reverse recovery di/dt-induced shoot-through risk in half-bridge synchronous rectifiers.
175 °C rated junction	Enables full 62 A current capability up to T_C = 100 °C without derating - eliminates need for oversized heatsinks in compact 1U power supplies.
MSL 1 moisture sensitivity	Zero bake requirement before reflow - supports standard SMT assembly lines without process modification.
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21 - meets environmental requirements for industrial and automotive-grade end equipment.

Applications

Server VRM Output Stage

Industrial DC-DC Converter

Use Scenario: High-current, high-efficiency 12 V → 0.8 V point-of-load regulation in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter, operating at 500–800 kHz with 60+ A peak phase current.

Use Value: 11 mΩ R_DS(on) and 112.5 nC Q_rr reduce total power loss by ≥12% vs. legacy 15 mΩ devices, improving system efficiency from 92.1% to 93.4% at 600 W load.

Use Scenario: 48 V input isolated DC-DC module for factory automation controllers with wide ambient temperature range.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology, handling 120 V transient surges and 175 °C ambient operation.

Use Value: 175 °C T_j(max) and 185 mJ E_AS allow reliable operation without derating in unventilated cabinets, extending MTBF by >35% over 150 °C-rated alternatives.

Telecom Rectifier Module

Motor Drive Half-Bridge

Use Scenario: 54 V input telecom rectifier delivering 200 A output in -48 V DC distribution systems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck stage, switching at 300 kHz with tight dead-time control.

Use Value: 3.6–5.4 nC Q_gd ensures minimal Miller-induced turn-on during high dV/dt transitions, eliminating false triggering in multi-phase layouts.

Use Scenario: 24–48 V BLDC motor drive for warehouse AGVs requiring high torque at stall and low acoustic noise.

IC Role / Device Role / Timing Role: High-side and low-side switch in 3-phase inverter half-bridge, operating with 100% duty cycle capability and body-diode commutation.

Use Value: 0.86–1.0 V V_SD and 23–46 ns t_rr minimize conduction loss and voltage overshoot during PWM freewheeling, reducing motor winding heating by 18%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 9.5 mΩ @ 100 V, Q_G = 17.5 nC, T_j(max) = 175 °C, PowerFLAT 5×6 package	Lower R_DS(on) but higher Q_G increases switching loss above 400 kHz; no specified Q_rr data for diode recovery	Select when lowest conduction loss dominates and switching frequency ≤ 300 kHz; verify diode recovery behavior in synchronous rectifier layout.
IXTH110N10L2	R_DS(on) = 10.5 mΩ @ 100 V, Q_G = 12.8 nC, T_j(max) = 175 °C, TO-247 package	TO-247 mechanical form factor requires larger PCB area and manual heatsink mounting; lower Q_G improves high-frequency efficiency but lacks SuperSO8 thermal performance	Select for prototyping or low-volume industrial inverters where thermal interface flexibility outweighs board space constraints.

Compared with STL220N10F7 and IXTH110N10L2, ISC110N12NM6ATMA1 uniquely balances ultra-low Q_rr, 1.6 °C/W R_thJC, and surface-mount scalability-making it optimal for high-density, high-reliability 120 V synchronous rectifiers where diode recovery and thermal resistance are design-critical.

Availability

ISC110N12NM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for ISC110N12NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This device belongs to the OptiMOSTM 6 family-designed specifically for high-efficiency, high-frequency power conversion in datacenter, industrial, and telecom infrastructure where low Q_rr, thermal robustness, and packaging scalability are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, ISC110N12NM6ATMA1 supports 44 A continuous drain current with V_GS = 10 V, as specified in Table 2 of the datasheet. This reflects thermal derating from the 62 A rating at 25 °C, based on R_thJC = 1.6 °C/W and safe junction temperature limits.

Does this MOSFET have an integrated body diode, and what are its key recovery characteristics?

Yes, ISC110N12NM6ATMA1 includes an internal body diode optimized for synchronous rectification. Its reverse recovery charge Q_rr is 112.5 nC at dI_F/dt = 1000 A/µs and V_R = 60 V, with t_rr = 14.7–29.4 ns. These values are measured under standardized conditions and enable predictable snubberless operation in hard-switched topologies.

Can ISC110N12NM6ATMA1 be used in avalanche mode, and what is its single-pulse energy rating?

Yes, it is fully qualified for repetitive and single-pulse avalanche operation. The datasheet specifies a single-pulse avalanche energy E_AS of 185 mJ at I_AS = 26 A and T_C = 25 °C. This rating assumes proper gate drive and external circuit limiting to avoid secondary breakdown during transient events.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) is specified from 2.6 V to 3.6 V at T_j = 25 °C, with typical value 3.1 V. As shown in Diagram 10, it decreases linearly with rising junction temperature-approximately 2.2 V at 175 °C-ensuring stable turn-on margin across the full operating range without unintended conduction.

ISC110N12NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 19.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SuperSO8

ISC110N12NM6ATMA1 FAQ

1.How can I place an order for ISC110N12NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC110N12NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC110N12NM6ATMA1 reliable?

The price and inventory of ISC110N12NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC110N12NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for ISC110N12NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC110N12NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC110N12NM6ATMA1?

ISC110N12NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC110N12NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC110N12NM6ATMA1?

For technical support, including ISC110N12NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC110N12NM6ATMA1 requirements.

6.How does Aetrix verify that ISC110N12NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC110N12NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC110N12NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of ISC110N12NM6ATMA1?

All ISC110N12NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC110N12NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC110N12NM6ATMA1 part is unused and in its original packaging.

Return procedure for ISC110N12NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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